Untitled
Abstract: No abstract text available
Text: Vishay Telefunken Eye Safety of Diode Emitters Document Number 82500 05.01 www.vishay.com 1 Vishay Telefunken Eye Safety of Diode Emitters IEC, the International Electrotechnical Committee and CENELEC, the European Committee for Electrotechnical Standardization officially recognized
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83/189/EEC)
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RB160-40
Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Text: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148
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CDSL4148
LL4148
PMLL4148
RLS4148
CDSF335
BAS16WS
CDSF4148
1N4148WS
RB160-40
KBPC10010
MP1008
zener diode sod80 rohm
MMBZ524B
RLR4002
SMAZ56
DIODE US1J
KBPC5010
SMAJ11
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IEC60601-2-22
Abstract: IEC60825-1 IEC-60825-1 IEC-60825 IEC608251
Text: VISHAY Vishay Semiconductors Eye Safety of Diode Emitters The International Electrotechnical Committee IEC and the European Committee for Electrotechnical Standardization (CENELEC, officially recognized as the European Standards Organization in its field by
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83/189/EEC)
gov/cdrh/comp/guidance/1346
02-Jul-03
IEC60601-2-22
IEC60825-1
IEC-60825-1
IEC-60825
IEC608251
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IEC60825-1
Abstract: IEC60825 IEC60601-2-22 radiological Infrared Emitting Diode EN60825-1
Text: Eye Safety of Diode Emitters Vishay Semiconductors Eye Safety of Diode Emitters Since 1993, the International Electrotechnical Committee IEC and the European Committee for Electrotechnical Standardization (CENELEC, officially recognized as the European Standards Organization
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83/189/EEC)
IEC60825-1,
IEC60601-2-22;
gov/cdrh/comp/guidance/1346
25-Aug-06
IEC60825-1
IEC60825
IEC60601-2-22
radiological
Infrared Emitting Diode
EN60825-1
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IEC60825-1
Abstract: IEC60601-2-22 IEC-60825-1 IEC60825-1 LED IEC-60825 EN60825-1
Text: Eye Safety of Diode Emitters Vishay Semiconductors Eye Safety of Diode Emitters Since 1993, the International Electrotechnical Committee IEC and the European Committee for Electrotechnical Standardization (CENELEC, officially recognized as the European Standards Organization
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83/189/EEC)
gov/cdrh/comp/guidance/1346
20-Sep-06
IEC60825-1
IEC60601-2-22
IEC-60825-1
IEC60825-1 LED
IEC-60825
EN60825-1
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VESD05C-FC1
Abstract: No abstract text available
Text: VESD05C-FC1 VISHAY Vishay Semiconductors Flip Chip Protection Diode - Chip Size 0402 Description Flip Chip is a chip with all packaging and interconnections manufactured on the wafer prior to dicing. The interconnections are made of solder bumps on i/o pads.Our device utilizes a silicon P/N junction for
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VESD05C-FC1
D-74025
14-Jul-04
VESD05C-FC1
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Untitled
Abstract: No abstract text available
Text: Product Group: Vishay Semiconductors, Diodes / January 2015 Author: Roland Reuschle Tel: +49 7131 67-2634 E-mail: roland.reuschle@vishay.com New BiAs Single-Line ESD Protection Diode Saves Board Space for Portable Electronics Product Benefits: •
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LLP1006-2L
VESD15A1-HD1-G4-08
VESD15A1-HD1)
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Untitled
Abstract: No abstract text available
Text: Product Group: Vishay Semiconductors, Diodes / March 2015 Author: Roland Reuschle Tel: +49 7131 67-2634 E-mail: roland.reuschle@vishay.com New BiSy Single-Line, Ultra-Low-Capacitance ESD Protection Diode Saves Board Space in Portable Electronics Product Benefits:
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CLP0603
VBUS05B1-SD0
VBUS05B1-SD0)
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GMS05C
Abstract: GMS15
Text: GMS05C thru GMS24C Vishay Semiconductors New Product formerly General Semiconductor Surface Mount TVS Diode Array Pin Configuration SOT-23-6L Top View SOT-23-6L 0.120 (3.05) 0.110 (2.80) 6 5 4 1 2 3 Top View 0.118 (3.00) 0.102 (2.60) 0.070 (1.75) 0.059 (1.50)
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GMS05C
GMS24C
OT-23-6L
OT-23-6L
GMS05C:
GMS12C:
GMS15C:
GMS24C:
GMS15
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Untitled
Abstract: No abstract text available
Text: VESD05C-FC1 Vishay Semiconductors Flip Chip Protection Diode - Chip Size 0402 Description Flip Chip is a chip with all packaging and interconnections manufactured on the wafer prior to dicing. The interconnections are made of solder bumps on i/o pads.Our device utilizes a silicon P/N junction for
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VESD05C-FC1
11-Mar-11
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VESD05C-FC1
Abstract: No abstract text available
Text: VESD05C-FC1 Vishay Semiconductors Flip Chip Protection Diode - Chip Size 0402 Description Flip Chip is a chip with all packaging and interconnections manufactured on the wafer prior to dicing. The interconnections are made of solder bumps on i/o pads.Our device utilizes a silicon P/N junction for
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VESD05C-FC1
08-Apr-05
VESD05C-FC1
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Untitled
Abstract: No abstract text available
Text: VESD05C-FC1 Vishay Semiconductors Flip Chip Protection Diode - Chip Size 0402 Description Flip Chip is a chip with all packaging and interconnections manufactured on the wafer prior to dicing. The interconnections are made of solder bumps on i/o pads.Our device utilizes a silicon P/N junction for
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VESD05C-FC1
D-74025
02-May-05
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Untitled
Abstract: No abstract text available
Text: VESD05C-FC1 Vishay Semiconductors Flip Chip Protection Diode - Chip Size 0402 Description Flip Chip is a chip with all packaging and interconnections manufactured on the wafer prior to dicing. The interconnections are made of solder bumps on i/o pads.Our device utilizes a silicon P/N junction for
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VESD05C-FC1
D-74025
15-Sep-05
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Untitled
Abstract: No abstract text available
Text: VESD05C-FC1 Vishay Semiconductors Flip Chip Protection Diode - Chip Size 0402 Description Flip Chip is a chip with all packaging and interconnections manufactured on the wafer prior to dicing. The interconnections are made of solder bumps on i/o pads.Our device utilizes a silicon P/N junction for
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VESD05C-FC1
D-74025
18-May-05
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e1 marking
Abstract: No abstract text available
Text: VESD05C-FC1 Vishay Semiconductors Flip Chip Protection Diode - Chip Size 0402 Description Flip Chip is a chip with all packaging and interconnections manufactured on the wafer prior to dicing. The interconnections are made of solder bumps on i/o pads.Our device utilizes a silicon P/N junction for
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VESD05C-FC1
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
e1 marking
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SC-70-6
Abstract: No abstract text available
Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free
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SiA810DJ
SC-70
SC-70-6
08-Apr-05
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SC-70-6
Abstract: No abstract text available
Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free
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SiA810DJ
SC-70
SC-70-6
18-Jul-08
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SC-70-6
Abstract: 74957
Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free
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SiA810DJ
SC-70
SC-70-6
11-Mar-11
74957
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Untitled
Abstract: No abstract text available
Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free
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SiA810DJ
SC-70
SC-70-6
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free
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SiA810DJ
SC-70
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free
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SiA810DJ
SC-70
SC-70-6
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SC-70-6
Abstract: No abstract text available
Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) rDS(on) (Ω) 20 • LITTLE FOOT Plus Schottky Power MOSFET
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SiA810DJ
SC-70
SC-70-6
08-Apr-05
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smps 800W
Abstract: No abstract text available
Text: New 45 -V Fa mily Ta rgets High -Te mpe r ature A pplic ations FEATURES • • • • • Built on submicron trench technology Very low typical forward voltage drop of < 0.50 V at rated current Extremely low typical reverse leakage: 40 % lower than planar technology
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VMN-PT0136-0812
smps 800W
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Untitled
Abstract: No abstract text available
Text: VISHAY T Vishay Telefunken Eye Safety of Diode Emitters IEC and CENELEC, the International Electrotech nical Committee and the European Committee for Electrotechnical Standardization have included Diode Emitters such as IREDs and LEDs into the laser safety standard. This is due to the techno
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