diode
Abstract: J-STD-002
Text: New Product V10150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-220AB • High efficiency operation
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Original
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PDF
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V10150C
O-220AB
22-B106
2002/95/EC
2002/96/EC
O-220Alectual
18-Jul-08
diode
J-STD-002
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J-STD-002
Abstract: No abstract text available
Text: New Product V10150C, VF10150C, VB10150C & VI10150C Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power
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Original
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PDF
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V10150C,
VF10150C,
VB10150C
VI10150C
O-220AB
ITO-220AB
V10150C
J-STD-020,
O-263AB
22-B106
J-STD-002
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V10-150
Abstract: J-STD-002
Text: New Product V10150C, VF10150C, VB10150C & VI10150C Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power
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Original
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PDF
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V10150C,
VF10150C,
VB10150C
VI10150C
O-220AB
ITO-220AB
V10150C
J-STD-020,
O-263AB
22-B106
V10-150
J-STD-002
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Untitled
Abstract: No abstract text available
Text: New Product V10150C, VF10150C, VB10150C & VI10150C Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power
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Original
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PDF
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V10150C,
VF10150C,
VB10150C
VI10150C
O-220AB
ITO-220AB
J-STD-020,
O-263AB
O-220AB,
ITO-220AB
|
Untitled
Abstract: No abstract text available
Text: New Product V10150C, VF10150C, VB10150C & VI10150C Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power
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Original
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PDF
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V10150C,
VF10150C,
VB10150C
VI10150C
O-220AB
ITO-220AB
J-STD-020,
O-263AB
22-B106
O-220AB,
|
Untitled
Abstract: No abstract text available
Text: V10150C, VF10150C, VB10150C, VI10150C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses
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Original
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PDF
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V10150C,
VF10150C,
VB10150C,
VI10150C
O-220AB
ITO-220AB
J-STD-020,
O-263AB
V10150C
22-B106
|
J-STD-002
Abstract: V10150C
Text: New Product V10150C, VF10150C, VB10150C & VI10150C Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power
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Original
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PDF
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V10150C,
VF10150C,
VB10150C
VI10150C
O-220AB
ITO-220AB
V10150C
J-STD-020,
O-263AB
O-220AB,
J-STD-002
V10150C
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Untitled
Abstract: No abstract text available
Text: New Product V10150C, VF10150C, VB10150C & VI10150C Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power
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Original
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PDF
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V10150C,
VF10150C,
VB10150C
VI10150C
O-220AB
ITO-220AB
V10150C
J-STD-020,
O-263AB
22-B106
|
Untitled
Abstract: No abstract text available
Text: V10150C, VI10150C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 at IF = 3 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses
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Original
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PDF
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V10150C,
VI10150C
O-220AB
O-262AA
22-B106
AEC-Q101
V10150C
2002/95/EC.
2002/95/EC
|
Untitled
Abstract: No abstract text available
Text: New Product V10150C, VI10150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses
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Original
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PDF
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V10150C,
VI10150C
O-220AB
O-262AA
22-B106
2002/95/EC
2002/96/EC
V10150C
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: V10170C-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation
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Original
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PDF
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V10170C-M3
O-220AB
22-B106
V10170C
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product V10150C, VI10150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses
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Original
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PDF
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V10150C,
VI10150C
O-220AB
O-262AA
22-B106
AEC-Q101
2002/95/EC
2002/96/EC
V10150C
|
Untitled
Abstract: No abstract text available
Text: New Product V10150C, VI10150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses
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Original
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PDF
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V10150C,
VI10150C
O-220AB
O-262AA
22-B106
AEC-Q101
2002/95/EC
2002/96/EC
V10150C
|
v1017
Abstract: No abstract text available
Text: V10170C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation
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Original
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PDF
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V10170C
O-220AB
22-B106
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
v1017
|
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Untitled
Abstract: No abstract text available
Text: V10150S, VI10150S www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses
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Original
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PDF
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V10150S,
VI10150S
O-220AB
O-262AA
22-B106
AEC-Q101
V10150S
2002/95/EC.
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: V10150S, VF10150S, VB10150S, VI10150S www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology • Low forward voltage drop, low power losses
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Original
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PDF
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V10150S,
VF10150S,
VB10150S,
VI10150S
ITO-220AB
O-220AB
J-STD-020,
O-263AB
V10150S
22-B106
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Untitled
Abstract: No abstract text available
Text: New Product V10150S, VF10150S & VI10150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses
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Original
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PDF
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V10150S,
VF10150S
VI10150S
O-220AB
ITO-220AB
O-220AB,
ITO-220AB
O-262AA
V10150S
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Untitled
Abstract: No abstract text available
Text: New Product V10150S, VF10150S, VB10150S & VI10150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses
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Original
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PDF
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V10150S,
VF10150S,
VB10150S
VI10150S
O-220AB
ITO-220AB
J-STD-020,
O-263AB
V10150S
VF10150S
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Untitled
Abstract: No abstract text available
Text: New Product V10150S, VF10150S, VB10150S & VI10150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power
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Original
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PDF
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V10150S,
VF10150S,
VB10150S
VI10150S
O-220AB
ITO-220AB
J-STD-020,
O-263AB
O-220AB,
ITO-220AB
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J-STD-002
Abstract: No abstract text available
Text: New Product V10150S, VF10150S, VB10150S & VI10150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power
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Original
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PDF
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V10150S,
VF10150S,
VB10150S
VI10150S
O-220AB
ITO-220AB
V10150S
J-STD-020,
O-263AB
O-220AB,
J-STD-002
|
Untitled
Abstract: No abstract text available
Text: New Product V10150S, VI10150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses
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Original
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PDF
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V10150S,
VI10150S
O-220AB
O-262AA
22-B106
AEC-Q101
V10150S
2002/95/EC
2002/96/EC
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J-STD-002
Abstract: No abstract text available
Text: New Product V10150S, VF10150S, VB10150S & VI10150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power
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Original
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PDF
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V10150S,
VF10150S,
VB10150S
VI10150S
O-220AB
ITO-220AB
J-STD-020,
O-263AB
V10150S
22-B106
J-STD-002
|
ISV101
Abstract: 30VForward VR30
Text: FTCW/.RD V < T 3 i « n a « L ELZKrRCt<KS LTD IS V101 SEMICONDUCTOR TECHNICAL DATA VARIABLE CA PACITANCE DIODE Features ^Excellent Linearity, *High Capacitance; "Low Series Re si stance; *Small Package. Package: TO-92 xAtppli cations Elec troriic Tuning in V HF Television tune rs barid a CP To 100MHz
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OCR Scan
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PDF
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ISV101
100MHz
ISV101
30VForward
VR30
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SKKE400F
Abstract: No abstract text available
Text: S1E D • a i 3 b b 7 1 G Q 0 3 4 4 T 3TT m S Z K G s e MIKRD n S E H I K R O N INC Ifrms maximum value for continuous operation Vrsm Vrrm 650 A Fast Diode Modules SKKE400F Ifav (sin. 180;Tease = 89°C;50Hz) V 400 A 800 SKKE 400 F 08 1200 S K K E400 F 12
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OCR Scan
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PDF
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SKKE400F
-U-44
SKKE400F
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