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    DIODE V101 Search Results

    DIODE V101 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE V101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode

    Abstract: J-STD-002
    Text: New Product V10150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-220AB • High efficiency operation


    Original     		PDF V10150C O-220AB 22-B106 2002/95/EC 2002/96/EC O-220Alectual 18-Jul-08 diode J-STD-002

    J-STD-002

    Abstract: No abstract text available
    Text: New Product V10150C, VF10150C, VB10150C & VI10150C Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power


    Original     		PDF V10150C, VF10150C, VB10150C VI10150C O-220AB ITO-220AB V10150C J-STD-020, O-263AB 22-B106 J-STD-002

    V10-150

    Abstract: J-STD-002
    Text: New Product V10150C, VF10150C, VB10150C & VI10150C Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power


    Original     		PDF V10150C, VF10150C, VB10150C VI10150C O-220AB ITO-220AB V10150C J-STD-020, O-263AB 22-B106 V10-150 J-STD-002

    Untitled

    Abstract: No abstract text available
    Text: New Product V10150C, VF10150C, VB10150C & VI10150C Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power


    Original     		PDF V10150C, VF10150C, VB10150C VI10150C O-220AB ITO-220AB J-STD-020, O-263AB O-220AB, ITO-220AB

    Untitled

    Abstract: No abstract text available
    Text: New Product V10150C, VF10150C, VB10150C & VI10150C Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power


    Original     		PDF V10150C, VF10150C, VB10150C VI10150C O-220AB ITO-220AB J-STD-020, O-263AB 22-B106 O-220AB,

    Untitled

    Abstract: No abstract text available
    Text: V10150C, VF10150C, VB10150C, VI10150C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V10150C, VF10150C, VB10150C, VI10150C O-220AB ITO-220AB J-STD-020, O-263AB V10150C 22-B106

    J-STD-002

    Abstract: V10150C
    Text: New Product V10150C, VF10150C, VB10150C & VI10150C Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power


    Original     		PDF V10150C, VF10150C, VB10150C VI10150C O-220AB ITO-220AB V10150C J-STD-020, O-263AB O-220AB, J-STD-002 V10150C

    Untitled

    Abstract: No abstract text available
    Text: New Product V10150C, VF10150C, VB10150C & VI10150C Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power


    Original     		PDF V10150C, VF10150C, VB10150C VI10150C O-220AB ITO-220AB V10150C J-STD-020, O-263AB 22-B106

    Untitled

    Abstract: No abstract text available
    Text: V10150C, VI10150C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 at IF = 3 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V10150C, VI10150C O-220AB O-262AA 22-B106 AEC-Q101 V10150C 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: New Product V10150C, VI10150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V10150C, VI10150C O-220AB O-262AA 22-B106 2002/95/EC 2002/96/EC V10150C 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: V10170C-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		PDF V10170C-M3 O-220AB 22-B106 V10170C 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product V10150C, VI10150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V10150C, VI10150C O-220AB O-262AA 22-B106 AEC-Q101 2002/95/EC 2002/96/EC V10150C

    Untitled

    Abstract: No abstract text available
    Text: New Product V10150C, VI10150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V10150C, VI10150C O-220AB O-262AA 22-B106 AEC-Q101 2002/95/EC 2002/96/EC V10150C

    v1017

    Abstract: No abstract text available
    Text: V10170C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		PDF V10170C O-220AB 22-B106 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 v1017

    Untitled

    Abstract: No abstract text available
    Text: V10150S, VI10150S www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses


    Original     		PDF V10150S, VI10150S O-220AB O-262AA 22-B106 AEC-Q101 V10150S 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: V10150S, VF10150S, VB10150S, VI10150S www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology • Low forward voltage drop, low power losses


    Original     		PDF V10150S, VF10150S, VB10150S, VI10150S ITO-220AB O-220AB J-STD-020, O-263AB V10150S 22-B106

    Untitled

    Abstract: No abstract text available
    Text: New Product V10150S, VF10150S & VI10150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V10150S, VF10150S VI10150S O-220AB ITO-220AB O-220AB, ITO-220AB O-262AA V10150S

    Untitled

    Abstract: No abstract text available
    Text: New Product V10150S, VF10150S, VB10150S & VI10150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V10150S, VF10150S, VB10150S VI10150S O-220AB ITO-220AB J-STD-020, O-263AB V10150S VF10150S

    Untitled

    Abstract: No abstract text available
    Text: New Product V10150S, VF10150S, VB10150S & VI10150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power


    Original     		PDF V10150S, VF10150S, VB10150S VI10150S O-220AB ITO-220AB J-STD-020, O-263AB O-220AB, ITO-220AB

    J-STD-002

    Abstract: No abstract text available
    Text: New Product V10150S, VF10150S, VB10150S & VI10150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power


    Original     		PDF V10150S, VF10150S, VB10150S VI10150S O-220AB ITO-220AB V10150S J-STD-020, O-263AB O-220AB, J-STD-002

    Untitled

    Abstract: No abstract text available
    Text: New Product V10150S, VI10150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses


    Original     		PDF V10150S, VI10150S O-220AB O-262AA 22-B106 AEC-Q101 V10150S 2002/95/EC 2002/96/EC

    J-STD-002

    Abstract: No abstract text available
    Text: New Product V10150S, VF10150S, VB10150S & VI10150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power


    Original     		PDF V10150S, VF10150S, VB10150S VI10150S O-220AB ITO-220AB J-STD-020, O-263AB V10150S 22-B106 J-STD-002

    ISV101

    Abstract: 30VForward VR30
    Text: FTCW/.RD V < T 3 i « n a « L ELZKrRCt<KS LTD IS V101 SEMICONDUCTOR TECHNICAL DATA VARIABLE CA PACITANCE DIODE Features ^Excellent Linearity, *High Capacitance; "Low Series Re si stance; *Small Package. Package: TO-92 xAtppli cations Elec troriic Tuning in V HF Television tune rs barid a CP To 100MHz


    OCR Scan     		PDF ISV101 100MHz ISV101 30VForward VR30

    SKKE400F

    Abstract: No abstract text available
    Text: S1E D • a i 3 b b 7 1 G Q 0 3 4 4 T 3TT m S Z K G s e MIKRD n S E H I K R O N INC Ifrms maximum value for continuous operation Vrsm Vrrm 650 A Fast Diode Modules SKKE400F Ifav (sin. 180;Tease = 89°C;50Hz) V 400 A 800 SKKE 400 F 08 1200 S K K E400 F 12


    OCR Scan     		PDF SKKE400F -U-44 SKKE400F