IDW40G120C5B
Abstract: No abstract text available
Text: Silicon Carbide Schottky Diode IDW40G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW40G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1
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IDW40G120C5B
IDW40G120C5B
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Untitled
Abstract: No abstract text available
Text: Silicon Carbide Schottky Diode IDW15G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW15G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1
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IDW15G120C5B
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Untitled
Abstract: No abstract text available
Text: Silicon Carbide Schottky Diode IDW20G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW20G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1
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IDW20G120C5B
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D3012B5
Abstract: No abstract text available
Text: Silicon Carbide Schottky Diode IDW30G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW30G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1
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IDW30G120C5B
D3012B5
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1N5341B diode
Abstract: No abstract text available
Text: 1N5341B 6.2 V - 5 Watt Surmetic 40 Silicon Zener Diode 0.31 Diodes Reference/Regula. Page 1 of 1 Enter Your Part # Home Part Number: 1N5341B Online Store 1N5341B Diodes 6.2 V - 5 Watt Surmetic 40 Silicon Zener Diode Transistors Integrated Circuits Optoelectronics
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1N5341B
1N5341B
com/1n5341b
1N5341B diode
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MO-193-C
Abstract: No abstract text available
Text: Si3812DV Vishay Siliconix N-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.125 at VGS = 4.5 V 2.4 0.200 at VGS = 2.5 V 1.8 SCHOTTKY PRODUCT SUMMARY VKA (V) VF (V) Diode Forward Voltage IF (A)
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Si3812DV
2002/95/EC
Si3812DV-T1-GE3
11-Mar-11
MO-193-C
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si3812
Abstract: No abstract text available
Text: Si3812DV Vishay Siliconix N-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.125 at VGS = 4.5 V 2.4 0.200 at VGS = 2.5 V 1.8 SCHOTTKY PRODUCT SUMMARY VKA (V) VF (V) Diode Forward Voltage IF (A)
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Si3812DV
2002/95/EC
Si3812DV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si3812
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Untitled
Abstract: No abstract text available
Text: Si3812DV Vishay Siliconix N-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.125 at VGS = 4.5 V 2.4 0.200 at VGS = 2.5 V 1.8 SCHOTTKY PRODUCT SUMMARY VKA (V) VF (V) Diode Forward Voltage IF (A)
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Si3812DV
2002/95/EC
Si3812DV-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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marking code vishay SILICONIX
Abstract: Vishay DaTE CODE 1206-8 vishay MOSFET code marking
Text: Si5856DC Vishay Siliconix N-Channel 1.8 V G-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 0.045 at VGS = 2.5 V 5.6 0.052 at VGS = 1.8 V 5.2 SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage
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Si5856DC
Si5853DC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
marking code vishay SILICONIX
Vishay DaTE CODE 1206-8
vishay MOSFET code marking
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Untitled
Abstract: No abstract text available
Text: Si5856DC Vishay Siliconix N-Channel 1.8 V G-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 0.045 at VGS = 2.5 V 5.6 0.052 at VGS = 1.8 V 5.2 SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage
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Si5856DC
Si5853DC
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: 1N5338A 5.1 V 5 W silicon zener diode 1.98 Diodes Reference/Regulator Diodes Genera. Page 1 of 1 Enter Your Part # Home Part Number: 1N5338A Online Store 1N5338A Diodes 5.1 V 5 W silicon zener diode Transistors Enter code INTER3 at checkout.* Integrated Circuits
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1N5338A
1N5338A
com/1n5338a
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Untitled
Abstract: No abstract text available
Text: 1N5346B 9.1 V - 150 MA - 5 W Glass Passivated Zener Diode 1.40 Diodes Reference/Re. Page 1 of 1 Enter Your Part # Home Part Number: 1N5346B Online Store 1N5346B Diodes 9.1 V - 150 MA - 5 W Glass Passivated Zener Diode Transistors Integrated Circuits Optoelectronics
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1N5346B
1N5346B
DO-201AD
com/1n5346b
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Untitled
Abstract: No abstract text available
Text: Si4830ADY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30
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Si4830ADY
Si4830DY
2002/95/EC
Si4830ADY-T1-E3
Si4830ADY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si4830ADY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30
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Si4830ADY
Si4830DY
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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rd6.8a
Abstract: zener rd9.1esb2 rd5.6b RD11UM 09-5 diode RD30F RD6,8MW RD2.4E RD5.1P RD51P
Text: CD-ROM Diode CD-ROM X13769XJ2V0CD00 09-1 Diode Zener Diode • Zener Diode Quick Reference Surface-Mount Type (1/2) Vz (V) P (W) TYP. 0.15 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 RD2.0UM RD2.2UM RD2.4UM RD2.7UM
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X13769XJ2V0CD00
RD10UJ
RD10UM
RD11UJ
RD11UM
RD12UJ
RD12UM
RD13UJ
RD13UM
RD15UJ
rd6.8a
zener rd9.1esb2
rd5.6b
09-5 diode
RD30F
RD6,8MW
RD2.4E
RD5.1P
RD51P
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Untitled
Abstract: No abstract text available
Text: Si4736DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.0095 at VGS = 10 V 13 0.0105 at VGS = 4.5 V 12 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V at 3.0 A
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Si4736DY
2002/95/EC
Si4736DY-T1-E3
Si4736DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Short-form product specification Philips Semiconductors UHF variable capacitance diode APPLICATIONS BB811 QUICK REFERENCE DATA • TV-SAT tuners up to 2 GHz. SYMBOL MAX. UNIT - 30 V V r = 30 V - 20 nA diode capacitance V r = 28 V; f = 1 MHz 0.85 1.2 pF diode capacitance
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OD123
BB811
OD123)
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Untitled
Abstract: No abstract text available
Text: BAS45 J V LOW LEAKAGE DIODE Switching diode w ith a very low reverse current, encapsulated in a subminiature glass DO-34 envelope. Q UICK REFERENCE D ATA Continuous reverse voltage Vr max. 125 V Forward voltage Ip = 200 mA vF max. 1,0 V Reverse current V R = 125 V
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BAS45
DO-34)
DO-34
OD-68)
7Z92I41
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smd diode marking 26
Abstract: AM 130 sod323 marking 14
Text: Philips Semiconductors Short-form product specification VHF variable capacitance diode FEATURES BB150 QUICK REFERENCE DATA • Very good linearity SYMBOL MAX. UNIT - 30 V V r = 30 V - 10 nA VR = 0.5 V; f = 1 MHz 38 46 pF VR = 28 V; f = 1 MHz 2.2 2.6 PF diode capacitance
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OD323
BB150
OD323)
smd diode marking 26
AM 130
sod323 marking 14
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Untitled
Abstract: No abstract text available
Text: BAV105 J V ULTRA HIGH-SPEED DIODE Silicon planar epitaxial, ultra-high speed, high conductance diode in a SOD80C envelope, Q UICK REFERENCE D A T A VR max. 60 V Repetitive peak reverse voltage V RRM max. 60 V Repetitive peak forward current iFRIVI max. 600 mA
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BAV105
OD80C
500T2
OD80C.
100X1
400mA
100XL
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py81
Abstract: TELEVISION BOOSTER MAX222 rs tube 7Z06 booster
Text: PY81 BOOSTER DIODE Booster diode intended for use in line tim e-base circuits of transform erless television receiv ers. QUICK REFERENCE DATA Anode current, peak Anode voltage, peak Cathode to heater voltage, peak iap max. % m ax. 5000 V m ax. 5000 V v kfp
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max22
7Z06J0dâ
py81
TELEVISION BOOSTER
MAX222
rs tube
7Z06
booster
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max2810
Abstract: No abstract text available
Text: Short-form product specification Philips Semiconductors Variable capacitance diode BBY31 QUICK REFERENCE DATA APPLICATIONS • Electronic tuning applications in thick and thin film circuits. SYMBOL MIN. TYP. MAX. UNIT - - 28 V VR = 28 V - - 10 nA diode capacitance
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BBY31
max2810
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S4 DIODE
Abstract: DIODE S4 marking code s4 diode diode MARKING CODE S4 MAM172 DIODE marking S4 DIODE s4 marking code smd diode S4 28
Text: Short-form product specification Philips Semiconductors BBY62 Double variable capacitance diode QUICK REFERENCE DATA APPLICATIONS • Electronic tuners using SMD technology. SYMBOL CONDITIONS PARAMETER MIN. TYP. MAX. UNIT - - 28 V Per diode DESCRIPTION Double variable capacitance diode in
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BBY62
OT143
MAM172
S4 DIODE
DIODE S4
marking code s4 diode
diode MARKING CODE S4
MAM172
DIODE marking S4
DIODE s4 marking code
smd diode S4 28
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max2810
Abstract: No abstract text available
Text: Short-form product specification Philips Semiconductors Variable capacitance diode APPLICATIONS BB901 QUICK REFERENCE DATA • Intended as a tunable coupling diode in VHF all-band tuners. SYMBOL V DESCRIPTION r Ir Silicon planar variable capacitance diode in a micro-miniature SOT23
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BB901
max2810
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