D4457N
Abstract: D2228N D448N D5807N D5809N D758N KC30 613
Text: Sperr - Diode + Gleichspannung Sperrspannung Bauelement VRRM 100 V 200 V 400 V 200 V 400 V 800 V - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock KB [ltr/s]
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D448N
D2228N
D5809N
D4457N
D2228N
D448N
D5807N
D5809N
D758N
KC30 613
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D2228N
Abstract: D448N D5809N D758N thyristor 1651
Text: Sperr - Diode + Gleichspannung Sperrspannung Bauelement VRRM 100 V 200 V 400 V 200 V 400 V 800 V - Kühlblöcke für verstärkte Luftkühlung Temp. tA Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl
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D448N
D758N
D2228N
D5809N
D2228N
D448N
D5809N
D758N
thyristor 1651
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DIODE A6 sod110
Abstract: sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323
Text: Philips Semiconductors Comprehensive diode range: • Zener diodes • Schottky-barrier diode • Switching diodes • Band-switching diode SOD110 High-performance ceramic package www.semiconductors.philips.com V-packTM technology for higher power dissipation
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OD110
OD110
innovat27
SCB63
DIODE A6 sod110
sod110 package
SOD-110
BA792
philips zener diode
SOD110
BAS216
BAS221
BAT254
Zener Diode MARK 101 SOD323
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ba278
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D739 BA278 Band-switching diode Preliminary specification 2001 Jan 15 Philips Semiconductors Preliminary specification Band-switching diode BA278 PINNING FEATURES • Small plastic SMD package PIN ; • Continuous reverse voltage: max. 35 V
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M3D739
BA278
MBK258
MAM399
ba278
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diode smd ED 68
Abstract: diode smd ED 74 diode smd ED 84 sc793 BA278 BP317 diode smd marking ed diode ED 84 smd 816
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D739 BA278 Band-switching diode Preliminary specification 2001 Jan 15 Philips Semiconductors Preliminary specification Band-switching diode BA278 PINNING FEATURES • Small plastic SMD package PIN ; • Continuous reverse voltage: max. 35 V
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M3D739
BA278
MBK258
MAM399
diode smd ED 68
diode smd ED 74
diode smd ED 84
sc793
BA278
BP317
diode smd marking ed
diode ED 84
smd 816
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str 6707
Abstract: s4 69 diode smd BA277 DIODE S4 66 MCC SMD DIODE smd diode 6F diode 81 bp diode marking code 777 BA277,115 DIODE smd marking pl
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BA277 Band-switching diode Product specification 1998 May 06 Philips Semiconductors Product specification Band-switching diode BA277 PINNING FEATURES • Small plastic SMD package PIN • Continuous reverse voltage: max. 35 V
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M3D319
BA277
MAM399
SCA59
115104/00/01/pp8
str 6707
s4 69 diode smd
BA277
DIODE S4 66
MCC SMD DIODE
smd diode 6F
diode 81 bp
diode marking code 777
BA277,115
DIODE smd marking pl
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DL-3147-021
Abstract: No abstract text available
Text: Ordering number : ENN5861C Red Laser Diode DL-3147-021 DL-3147-021 Red Laser Diode Features Package Dimensions : 645 nm Typ. : Ith = 30 mA (Typ.) : Vop = 2.3 V (Typ.) : ø 5.6 mm ø4.4 ø3.55±0.1 ø1.6 Effective window diameter 1.0min. 1 3 Applications
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ENN5861C
DL-3147-021
DL-3147-021
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c 3953
Abstract: 6914 D1809N PD 1515 V 2238 D1069N D269N D3301N D749N D849N
Text: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 670 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]
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D269N
D749N
D1069N
D1809N
D849N
c 3953
6914
D1809N
PD 1515
V 2238
D1069N
D269N
D3301N
D749N
D849N
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6914
Abstract: 2481 diode 1298 D1069N D1809N D269N D3301N D749N D849N
Text: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 670 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]
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D269N
D749N
D1069N
D1809N
D849N
113suant
6914
2481 diode
1298
D1069N
D1809N
D269N
D3301N
D749N
D849N
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN6885A Red Laser Diode DL-4038-031 DL-4038-031 Red Laser Diode Features Package Dimensions : 635 nm Typ. : 10mW CW : Ith = 35 mA (Typ.) : Vop = 2.3 V (Typ.) : Tc = 50°C ø5.35 ø4.75±0.15 ø2.1 Effective window diameter 1.0min. 1 3
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ENN6885A
DL-4038-031
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red laser pointer
Abstract: DL-3038-013
Text: Ordering number : ENN6872A Red Laser Diode DL-3038-013 DL-3038-013 Red Laser Diode Features Package Dimensions : 635 nm Typ. : 5 mW CW : Ith = 30 mA (Typ.) : Vop = 2.2 V (Typ.) ø5.35 ø4.75±0.15 ø2.1 Effective window diameter 1.0min. 1 3 Top view 2 0.45±0.1
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ENN6872A
DL-3038-013
red laser pointer
DL-3038-013
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DL-4038-035
Abstract: No abstract text available
Text: Ordering number : ENN7578 Red Laser Diode DL-4038-035 DL-4038-035 Red Laser Diode Features Package Dimensions Tolerance : ±0.2 : mm Unit 9.0-0.03 : 635 nm Typ. : 20 mW CW : Ith = 40 mA (Typ.) : Vop = 2.3 V (Typ.) 5.35 4.75±0.15 2.1 Effective window diameter 1.0min.
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ENN7578
DL-4038-035
DL-4038-035
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DL-4038-021
Abstract: No abstract text available
Text: Ordering number : ENN5857C Red Laser Diode DL-4038-021 DL-4038-021 Red Laser Diode Features Package Dimensions : 635 nm Typ. : 10mW CW : Ith = 35 mA (Typ.) : Vop = 2.2 V (Typ.) ø5.35 ø4.75±0.15 ø2.1 Effective window diameter 1.0min. 1 3 Top view 2 0.45±0.1
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ENN5857C
DL-4038-021
DL-4038-021
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DL-3148-013
Abstract: No abstract text available
Text: Ordering number : ENN6879A Red Laser Diode DL-3148-013 DL-3148-013 Red Laser Diode Features Package Dimensions : 635 nm Typ. : Ith = 30 mA (Typ.) : 5 mW at 40°C : Vop = 2.2 V (Typ.) ø4.4 ø3.55±0.1 ø1.6 Effective window diameter 1.0min. 1 3 Top view
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ENN6879A
DL-3148-013
DL-3148-013
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D1809N
Abstract: D849N D269N datasheet 346 766 D1069N D3301N D749N
Text: M1 - Schaltung ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 440 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode D Thyristor
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D749N
D849N
D1069N
D1809N
1809N
D3301N
D1809N
D849N
D269N
datasheet 346 766
D1069N
D3301N
D749N
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DL-3038-033
Abstract: No abstract text available
Text: Ordering number : ENN5855C Red Laser Diode DL-3038-033 DL-3038-033 Red Laser Diode Features : 635 nm Typ. : Ith = 30 mA (Typ.) : 5 mW at 50°C : Vop = 2.2 V (Typ.) ø5.35 ø4.75±0.15 ø2.1 Effective window diameter 1.0min. 1 3 Top view 2 0.45±0.1 Applications
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ENN5855C
DL-3038-033
DL-3038-033
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6914
Abstract: c 3953 a 4504 D1069N D1809N D269N D3301N D849N 3953
Text: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 670 V 3600 V + Kühlblöcke für Wasserkühlung Wasser men. vL pro KB Temp. tA Satzstrom Id Verlustl. P d Schaltung Diode D [°C] [A]
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D269N
D849N
D1069N
D1809N
D3301N
6914
c 3953
a 4504
D1069N
D1809N
D269N
D3301N
D849N
3953
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c 3953
Abstract: 6914 D1809N a 4504 D269N k50 transistor D1069N D3301N D849N diode 8407
Text: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 670 V 3600 V + Kühlblöcke für Wasserkühlung Wasser men. vL pro KB Temp. tA Satzstrom Id Verlustl. P d Schaltung Diode D [°C] [A]
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D269N
D849N
D1069N
D1809N
D3301N
c 3953
6914
D1809N
a 4504
D269N
k50 transistor
D1069N
D3301N
D849N
diode 8407
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T1059N
Abstract: T1589N T2159N T308N T458N T709N KD202V
Text: Koppel - Thyristor + Gleichspannung + 1100 V Sperrspannung Bauelement VDRM/RRM 2200 V - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Id Schaltung Wasser men. vL pro KB Diode D Thyristor T Kühlblock KB [ltr/min] Anzahl KB pro Anzahl
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T308N
T458N
T709N
T1059N
T1589N
T2159N
T1059N
T1589N
T2159N
T308N
T458N
T709N
KD202V
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skiip gb 120
Abstract: No abstract text available
Text: s e MIKROn SKiiP 642 G B 120 - 208 CTV Absolute Maximum Ratings Symbol |Conditions 11 Values Units 1200 900 600 - 4 0 . . . + 150 3000 51 600 1200 4300 93 V V A °C V A A A kAas IGBT & Inverse Diode V ces V c c 91 lc T |3 V»oi4) If Ifm Ifsm f t Diode) Operating D C link voltage
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B7-38
skiip gb 120
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germanium
Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Text: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014
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I815/KTN
10I5/KTP
1923/KTN
380TM/KTN
germanium
kia 7208
KIA 7313
germanium transistor
speaker protector
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NEC K 2500
Abstract: DAD 1000 05611 LD1104 NDL3000 laser diode for printer NEC diode J22686 6W7525
Text: ST a ^ DE|b4E7525 642 6 427525 Nfcv ODDSt.ll fi N E C TENTATIVE SPEC IFIC ATION ELECTRONICS'INC 59C 05611 7 D T-41-05 LASER DIODE ELECTRON DEVICE NDL3000 D A D ,V D APPLICA TIO N AIGaAs DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTION NDL3000 laser diode is developed for DAD Digital Audio Disk , Video Disk optical head and non impact laser printer. The
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b4E7525
6W7525
T-41-05
NDL3000
NDL3000
Tokyo456-3111,
J22686
LD-1104B
NEC K 2500
DAD 1000
05611
LD1104
laser diode for printer
NEC diode
J22686
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diode AY 101
Abstract: BAL74W
Text: DISCRETE SEMICONDUCTORS [Mm SMEET BAL74W High-speed diode 1999 May 05 Product specification Supersedes data of 1996 Sep 03 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification High-speed diode BAL74W FEATURES DESCRIPTION • V ery sm all plastic S M D package
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BAL74W
BAL74W
SCA64
5002/00/04/pp1
diode AY 101
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L3006
Abstract: laser diode head
Text: . -V 6427525 rey I t C T SC £ ç IN C TENTAIVE SPECIFICATION 0D0Sb3S 0 | LASER DIODE E L EC T R ON I C S DE|b4275BS 59C 0 5 6 3 5 ELECTRON DEVICE D T_4i_ni; N D L3006 D AD .VD APPLICATION AIGaAs DOUBLE HETERO STRUCTURE LASER DIODE D E S C R IP T IO N N D L 3 0 0 6 laser diode is developed for DAD O igital Audio Disk), Video Disk optical head and non impact laser printer.
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b4275BS
L3006
L3006
laser diode head
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