STP3NB100FP
Abstract: STP3NB100
Text: STP3NB100 STP3NB100FP N-CHANNEL 1000V - 5.3Ω - 3A TO-220/TO-220FP PowerMesh MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STP3NB100 1000 V <6Ω 3A STP3NB100FP 1000 V <6Ω 3A • ■ ■ ■ ■ TYPICAL RDS(on) = 5.3Ω EXTREMELY HIGH dv/dt CAPABILITY
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STP3NB100
STP3NB100FP
O-220/TO-220FP
STP3NB100FP
STP3NB100
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IXTH6N100D2
Abstract: No abstract text available
Text: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 = > ≤ RDS(on) 1000V 6A 2.2Ω Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V Continuous
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IXTA6N100D2
IXTP6N100D2
IXTH6N100D2
O-263
O-220AB
O-220
O-247)
O-263
O-247
IXTH6N100D2
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MOSFET 800V 3A
Abstract: DC/AC to DC smps circuit diagram STP3NB100 SWITCHING WELDING SCHEMATIC BY MOSFET STP3NB100FP
Text: STP3NB100 STP3NB100FP N-CHANNEL 1000V - 5.3Ω - 3A TO-220/TO-220FP PowerMesh MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STP3NB100 1000 V < 6Ω 3A STP3NB100FP 1000 V < 6Ω 3A • ■ ■ ■ ■ TYPICAL RDS(on) = 5.3Ω EXTREMELY HIGH dv/dt CAPABILITY
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STP3NB100
STP3NB100FP
O-220/TO-220FP
MOSFET 800V 3A
DC/AC to DC smps circuit diagram
STP3NB100
SWITCHING WELDING SCHEMATIC BY MOSFET
STP3NB100FP
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IXTH6N100D2
Abstract: t6n100 IXTA6N100D2 IXTP6N100D2 T6N10 6N100D2 diode 6A 1000v
Text: Preliminary Technical Information IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 Depletion Mode MOSFET VDSX ID on = > ≤ RDS(on) 1000V 6A 2.2Ω Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V Continuous
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IXTA6N100D2
IXTP6N100D2
IXTH6N100D2
O-263
O-220AB
O-220
O-247)
O-263
O-247
IXTH6N100D2
t6n100
IXTA6N100D2
IXTP6N100D2
T6N10
6N100D2
diode 6A 1000v
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 Depletion Mode MOSFET VDSX ID on = > ≤ RDS(on) 1000V 6A 2.2Ω Ω N-Channel TO-263 AA (IXTA) G S D (TAB) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ
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IXTA6N100D2
IXTP6N100D2
IXTH6N100D2
O-263
O-220
O-247)
O-263
O-220
100ms
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T3N100
Abstract: IXTH3N100P IXTP3N100P IXTA3N100P Siemens DIODE E 1220
Text: Polar VHVTM Power MOSFET IXTA3N100P IXTH3N100P IXTP3N100P VDSS ID25 = 1000V = 3A ≤ Ω 4.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTA3N100P
IXTH3N100P
IXTP3N100P
O-263
3N100P
T3N100
IXTH3N100P
IXTP3N100P
IXTA3N100P
Siemens DIODE E 1220
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APT6M100K
Abstract: MIC4452 3a ultra fast diode
Text: APT6M100K 1000V, 6A, 2.50Ω MAX N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT6M100K
O-220
APT6M100K
MIC4452
3a ultra fast diode
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Untitled
Abstract: No abstract text available
Text: APT6M100K 1000V, 6A, 2.50Ω MAX N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT6M100K
O-220
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STP3NB100
Abstract: STP3NB100FP
Text: STP3NB100 STP3NB100FP N-CHANNEL 1000V - 5.3Ω - 3A TO-220/TO-220FP PowerMesh MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STP3NB100 1000 V <6Ω 3A STP3NB100FP 1000 V <6Ω 3A • ■ ■ ■ ■ TYPICAL RDS(on) = 5.3Ω EXTREMELY HIGH dv/dt CAPABILITY
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STP3NB100
STP3NB100FP
O-220/TO-220FP
STP3NB100
STP3NB100FP
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APT6M100K
Abstract: MIC4452
Text: APT6M100K 1000V, 6A, 2.50Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT6M100K
O-220
APT6M100K
MIC4452
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APT5F100K
Abstract: MIC4452 1000v5a
Text: APT5F100K 1000V, 5A 2.8Ω Max, Trr ≤ 155nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT5F100K
155nS
O-220
FREDFE42
APT5F100K
MIC4452
1000v5a
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Untitled
Abstract: No abstract text available
Text: APT5F100K 1000V, 5A 2.8Ω Max, Trr ≤ 155nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT5F100K
155nS
O-220
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IXTA3N100D2
Abstract: No abstract text available
Text: Depletion Mode MOSFETs IXTA3N100D2 IXTP3N100D2 VDSX ID on RDS(on) = > ≤ 1000V 3A 6Ω Ω N-Channel TO-263 AA (IXTA) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX G Maximum Ratings S 1000 V Continuous ±20 V VGSM Transient ±30 V PD TC = 25°C 125
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IXTA3N100D2
IXTP3N100D2
O-263
O-220AB
O-220)
O-220
100ms
3N100D2
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Untitled
Abstract: No abstract text available
Text: APT5F100K 1000V, 5A 2.9Ω Max, Trr ≤ 155nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT5F100K
155nS
O-220
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T3N100
Abstract: IXTA3N100D2 82709 IXTP3N100D2 3N100D2 T3N1 IXTP3N100
Text: Depletion Mode MOSFETs IXTA3N100D2 IXTP3N100D2 VDSX ID on RDS(on) = > ≤ 1000V 3A 5.5Ω Ω N-Channel TO-263 AA (IXTA) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX G Maximum Ratings S 1000 V Continuous ±20 V VGSM Transient ±30 V PD TC = 25°C 125
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IXTA3N100D2
IXTP3N100D2
O-263
O-220)
O-263
O-220
O-220AB
100ms
3N100D2
T3N100
IXTA3N100D2
82709
IXTP3N100D2
T3N1
IXTP3N100
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IXTP3N100P
Abstract: IXTA3N100P 3n100p T3N100 IXTH3N100P 3n100
Text: PolarTM Power MOSFET IXTA3N100P IXTH3N100P IXTP3N100P VDSS ID25 = 1000V = 3.0A ≤ 4.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTA3N100P
IXTH3N100P
IXTP3N100P
O-263
3N100P
3-08-A
IXTP3N100P
IXTA3N100P
T3N100
IXTH3N100P
3n100
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IXTH3N100P
Abstract: IXTA3N100P
Text: PolarTM Power MOSFET VDSS ID25 IXTA3N100P IXTH3N100P IXTP3N100P = 1000V = 3.0A ≤ 4.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25°C to 150°C 1000 V VDGR
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IXTA3N100P
IXTH3N100P
IXTP3N100P
O-263
O-220
3N100P
3-08-A
IXTH3N100P
IXTA3N100P
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T3N100
Abstract: IXTA3N100D2 3n100 ixta3n100 IXTP3N100D2
Text: Preliminary Technical Information IXTA3N100D2 IXTP3N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 1000V 3A 5.5Ω Ω N-Channel TO-263 AA (IXTA) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX G Maximum Ratings S 1000 V Continuous ±20 V VGSM
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IXTA3N100D2
IXTP3N100D2
O-263
O-220)
O-263
O-220
O-220AB
100ms
3N100D2
T3N100
IXTA3N100D2
3n100
ixta3n100
IXTP3N100D2
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXTA3N100D2 IXTP3N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 1000V 3A 5.5Ω Ω N-Channel TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ
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IXTA3N100D2
IXTP3N100D2
O-263
O-220)
O-263
O-220
O-220AB
100ms
3N100D2
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Schottky diode TO220 15A 1000V
Abstract: smd transistor c011 diode matrix rom LM317 DIP PACK transistor SMD 5kw smd L272 bdx54 smd LM317 SMD smps power supply 1500w amp TRANSIL DIODE smd
Text: DATA LOGGERS RECOMMENDED PRODUCTS FROM SGS-THOMSON PRINT HEAD HAMMER DRIVE Type ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 Function High Current Darlington Drivers Medium Current Low Saturation Transistor Array BDX53 BDX54 Series BDW93 & BDW94 Series
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ULN2003A
ULN2064B
ULN2068B
ULN2074B
L702N/A
L6221AS
L9222
BDX53
BDX54
BDW93
Schottky diode TO220 15A 1000V
smd transistor c011
diode matrix rom
LM317 DIP PACK
transistor SMD 5kw
smd L272
bdx54 smd
LM317 SMD
smps power supply 1500w amp
TRANSIL DIODE smd
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Stepper driver board with L297 L6203 circuit
Abstract: Stepper driver board with L297 L6203 PSO-36 high power LED DRIVER MC34063 uc3842 motor driver circuit MC34063 driver led Triac 3a 600v smd MC34063 smd LED DRIVER BY MC34063 lm317 30a pwm circuit
Text: AUTOMATION AND ROBOTICS RECOMMENDED PRODUCTS FROM SGS-THOMSON POWER SUPPLY Type L78xx L79xx L78Mxx LM317 LM317MDT LM323 LM337 LM338K LM350K L78Sxx L78Lxx LM723 L4940Vxx L4941 LFxx/KFxx LExxA/C LK115Dxx LD1117xx L4931 TL431 MC1403 POWER SUPPLY Cont’d Description
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L78xx
L79xx
L78Mxx
LM317
LM317MDT
LM323
LM337
LM338K
LM350K
L78Sxx
Stepper driver board with L297 L6203 circuit
Stepper driver board with L297 L6203
PSO-36
high power LED DRIVER MC34063
uc3842 motor driver circuit
MC34063 driver led
Triac 3a 600v smd
MC34063 smd
LED DRIVER BY MC34063
lm317 30a pwm circuit
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smd transistor x8
Abstract: smd transistor c011 12v 3a regulator LM317 WP smd transistor M5482 L298 L297 M5480 5kw dc-dc SGSF463 BYT12PI100
Text: DATA LOGGERS RECOMMENDED PRODUCTS FROM SGS-THOMSON PRINT HEAD HAMMER DRIVE Type Function ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 High Current Darlington Drivers Medium Current Low Saturation Transistor Array BDX53 BDX54 Series BDW93 & BDW94 Series
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ULN2003A
ULN2064B
ULN2068B
ULN2074B
L702N/A
L6221AS
L9222
PBL3717A
L6201/2/3
L6204
smd transistor x8
smd transistor c011
12v 3a regulator LM317
WP smd transistor
M5482
L298 L297
M5480
5kw dc-dc
SGSF463
BYT12PI100
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BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes
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DO-15
DO-201AD
O-220AC
T0202-3
STGP3NB60HD*
STGP7NB60HD*
STGP3NB60HD
STGP7NB60HD
BZX85C12V
TOSHIBA 2N3055
bta41-600b application
BTA41-600B firing circuit
TAB 429 H toshiba
BZX85C20V
SCR tyn612 pin configuration
picaxe
TYN612 specification
2SA1085E
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imsc012
Abstract: UC3842 led driver Triac 3a 600v smd MICROSTEP l298 IMSC004 pwm led driver uc3842 IMST425 IMST400 scr 600v 12a TO-220 IMSB404
Text: AUTOMATION AND ROBOTICS RECOMMENDED PRODUCTS FROM SGS-THOMSON POWER SUPPLY Type L78xx L79xx L78Mxx LM317 LM317MDT LM323 LM337 LM338K LM350K L78Sxx L78Lxx LM723 L4940Vxx L4941 LFxx LExxA/C LK115Dxx LD1117xx L4931 TLL31 MC1403 POWER SUPPLY Cont’d Description
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L78xx
L79xx
L78Mxx
LM317
LM317MDT
LM323
LM337
LM338K
LM350K
L78Sxx
imsc012
UC3842 led driver
Triac 3a 600v smd
MICROSTEP l298
IMSC004
pwm led driver uc3842
IMST425
IMST400
scr 600v 12a TO-220
IMSB404
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