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    IXTA3N100P Search Results

    IXTA3N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTA3N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 3A TO-263 Original PDF

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    IXTP3N100P

    Abstract: IXTA3N100P 3n100p T3N100 IXTH3N100P 3n100
    Text: PolarTM Power MOSFET IXTA3N100P IXTH3N100P IXTP3N100P VDSS ID25 = 1000V = 3.0A ≤ 4.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA3N100P IXTH3N100P IXTP3N100P O-263 3N100P 3-08-A IXTP3N100P IXTA3N100P T3N100 IXTH3N100P 3n100

    IXTH3N100P

    Abstract: IXTA3N100P
    Text: PolarTM Power MOSFET VDSS ID25 IXTA3N100P IXTH3N100P IXTP3N100P = 1000V = 3.0A ≤ 4.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original     		PDF IXTA3N100P IXTH3N100P IXTP3N100P O-263 O-220 3N100P 3-08-A IXTH3N100P IXTA3N100P

    T3N100

    Abstract: IXTH3N100P IXTP3N100P IXTA3N100P Siemens DIODE E 1220
    Text: Polar VHVTM Power MOSFET IXTA3N100P IXTH3N100P IXTP3N100P VDSS ID25 = 1000V = 3A ≤ Ω 4.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA3N100P IXTH3N100P IXTP3N100P O-263 3N100P T3N100 IXTH3N100P IXTP3N100P IXTA3N100P Siemens DIODE E 1220