DIODE T53
Abstract: transistor marking p3 SOD15 IGBT trr igbt high frequency 1200V STTA212S DI 380 Transistor TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE DIODE marking ED diode tURBOSWITCH
Text: STTA212S TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATASHEET MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS : FREEWHEEL OR BOOSTER DIODE
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STTA212S
DIODE T53
transistor marking p3
SOD15
IGBT trr
igbt high frequency 1200V
STTA212S
DI 380 Transistor
TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE
DIODE marking ED
diode tURBOSWITCH
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STTA212S
Abstract: No abstract text available
Text: STTA212S TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION ANDRECTIFICATION ULTRA-FAST AND SOFT RECOVERY
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STTA212S
STTA212S
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STTA212S
Abstract: No abstract text available
Text: STTA212S TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION ANDRECTIFICATION ULTRA-FAST AND SOFT RECOVERY
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STTA212S
STTA212S
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DIODE T53
Abstract: STTA212S SWITCHING DIODE 600V 2A
Text: STTA212S TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION AND RECTIFICATION
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STTA212S
DIODE T53
STTA212S
SWITCHING DIODE 600V 2A
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DIODE T53
Abstract: STTA212S
Text: STTA212S TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION AND RECTIFICATION ULTRA-FAST AND SOFT RECOVERY
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STTA212S
DIODE T53
STTA212S
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STTA212S
Abstract: 15A POWER TRANSISTOR FOR SMPS
Text: STTA212S TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION AND RECTIFICATION ULTRA-FAST AND SOFT RECOVERY
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STTA212S
STTA212S
15A POWER TRANSISTOR FOR SMPS
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new bright R288-2
Abstract: 24c08an new bright R288 ac14g ICS950405 CADIN14 K8T800 y532 quanta PHD108NQ03LT
Text: 5 4 3 2 1 ZI5 SYSTEM BLOCK DIAGRAM H/W MONITOR D THERMAL DIODE IN 200/266/333MHZ AMD Althon 64 P3 DDR DIMM P3, 4 DC/DC SMDDR_VTERM BOM mark ＊:no stuff P@:with PR stuff ＊@:with PR no stuff 19V IN P27,28 D DDR DIMM HyperTransport Link Y2-14.318MHz Y1-27MHz
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200/266/333MHZ
Y1-27MHz
Y2-14
318MHz
ICS950405
M10/M11
K8T800
Y5-32
768MHz
266/533MB/s
new bright R288-2
24c08an
new bright R288
ac14g
ICS950405
CADIN14
K8T800
y532
quanta
PHD108NQ03LT
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C25P04Q
Abstract: SM3 DIODE C25P03Q 4B20 1A039
Text: SCHOTTKY BARRIER DIODE C25P03Q C25P04Q 2 7.7 A /30 — 40V 5.30209 FEATURES 3.60142), 15.91.1 4.'?USS) °Similar to TO-247AC TO-3P) Case •&M.ml T53D 5 3 Ï3 W ° Dual Diodes - Cathode Common 2Q.3(.800) r~ 4X 169) 3.7{.145) o Low Forward. Voltage Drop L
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C25P03Q
C25P04Q
O-247AC
SC031)
D002Dflb
C25P04Q
SM3 DIODE
4B20
1A039
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IXYS DIODE
Abstract: mdd142 E72873 MDD142-06N1 MDD142-08N1 MDD142-12N1 MDD142-14N1 MDD142-16N1
Text: • 4bflbSSb 0 0 0 1 7 1 2 T53 B I X Y □ IXYS Diode Modules MDD142 l-TAv = 2 x 165 A < < i VRRM= 600-1800 V Vbrm V Type Version 1 700 900 1300 1500 1700 1900 600 800 1200 1400 1600 1800* MDD142-06N1 MDD142-08N1 MDD142-12N1 MDD142-14N1 MDD142-16N1 MDD142-18N1
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G001712
MDD142
MDD142-06N1
MDD142-08N1
MDD142-12N1
MDD142-14N1
MDD142-16N1
MDD142-1BN1
IXYS DIODE
E72873
MDD142-06N1
MDD142-08N1
MDD142-12N1
MDD142-14N1
MDD142-16N1
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Untitled
Abstract: No abstract text available
Text: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package . 50“ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger
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SEP8506
SDP8406
SDP8106
SDP8000/8600
SEP8506
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A/smd diode t53
Abstract: No abstract text available
Text: PD -9.1668A International I R Rectifier IRG4ZC70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFREDa ultrafast,
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IRG4ZC70UD
SMD-10
A/smd diode t53
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transistor marking 2A H
Abstract: STTA212S
Text: STTA212S TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If av 2A V rrm 1200V (typ) 65ns (max) 1.5V trr Vf FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPEFIATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION AND RECTIFICATION
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STTA212S
transistor marking 2A H
STTA212S
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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Untitled
Abstract: No abstract text available
Text: AN7283S AN7283S FM Front-end IC for Car Radio • Description The AN7283S is a monolithic integrated circuit designed for car radio, supporting DTSs other than RF amp. It has buffer output of local oscillation frequency and also incorporates 2 Loop-AGC and PIN diode driver for antenna
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AN7283S
AN7283S
AN7280S
122dB
32fi52
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AN7283S
Abstract: 40A-3 AN7280S F37A G1103 SFE107MS3
Text: A N 7283S AN7283S FM Front-end IC for Car Radio Unit : m m • Description The AN7283S is a monolithic integrated circuit designed for car radio, supporting DTSs other than RF amp. It has buffer output of local oscillation frequency and also incorporates 2 Loop-AGC and PIN diode driver for antenna
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AN7283S
AN7283S
AN7280S
122dB^
20-Lead
40A-3
AN7280S
F37A
G1103
SFE107MS3
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DIODE T53
Abstract: diode sg 35 transistor marking p3 T53 diode STTA212S
Text: £Z7 ^ 7# SGS-THOMSON M » iL iO T ( s iO O S S TTA 212S TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av ) 2A V rrm 1200V trr (typ) 65ns Vf PRELIMINARY DATASHEET 1.5V (max) FEATURES AND BENEFITS • SPECIFIC TO ’’FREEWHEEL MODE” OPERA
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AN7283S
Abstract: an7283 3FW transistor G1103 lkt 108 40A-3 AN7280S F37A adx 312 SFE107MS3
Text: A N 7283S AN7283S FM Front-end IC for Car Radio Unit : m m • Description The AN7283S is a monolithic integrated circuit designed for car radio, supporting DTSs other than RF amp. It has buffer output o f local oscillation frequency and also incorporates 2 Loop-AGC and PIN diode driver for antenna
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AN7283S
AN7283S
AN7280S
122dB^
20-Lead
an7283
3FW transistor
G1103
lkt 108
40A-3
AN7280S
F37A
adx 312
SFE107MS3
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MOSFET IRF 713
Abstract: No abstract text available
Text: • M302271 0054043 T53 ■ HAS IR F710/711/712/713 IRF71 OR/711R/712R/713R 33 HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -22 0A B TOP VIEW • 1.7A and 2.0A, 350V - 400V • i"DS °n = 3.6fl and 5.0fl DRAIN (FLANGE)
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M302271
F710/711/712/713
IRF71
OR/711R/712R/713R
IRF710,
IRF711,
IRF712,
IRF713
IRF710R,
IRF711R,
MOSFET IRF 713
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Untitled
Abstract: No abstract text available
Text: FCT Interface Logic HARRIS S E M I C O N D U C T O R HARRIS RCA GE INTERSIL C D 54/74FC T373, C D 54/74FCT373AT C D 54/74FC T533, C D 54/74FCT533AT July 1990 Octal Transparent Latch, 3-S tate CD54/74FCT373, CD54/74FCT373AT - Non-Inverting CD54/74FCT533, CD54/74FCT533AT - Inverting
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54/74FC
54/74FCT373AT
54/74FCT533AT
CD54/74FCT373,
CD54/74FCT373AT
CD54/74FCT533,
CD54/74FCT533AT
FCT373AT)
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74LS183
Abstract: IC 74LS183
Text: s G S-THOriSON 07E D | 7TE T53? Q O l b lb B S | W. 77 T54LS183 LOW POWER SGHOTTKY NTEGRATED Ik r s CIRCUITS 16 292 D t 74LS183 T ^ *5 -£ > 7 — DUAL CARRY-SAVE FULL ADDER DESCRIPTION The T54LS183/T74LS183 is a Dual Adder charac terising high-speed, high-fan-out Darlington out
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74LS183
T54LS183/T74LS183
T54LS
T74LS
18tween
74LS183
IC 74LS183
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Untitled
Abstract: No abstract text available
Text: /= 7 ^7# S G S -T H O M S O N M 54/74HC T374 M 54/74HC T534 OCTAL D-TYPE FLIP FLOP WITH 3 STATE OUTPUT HCT374 NON INVERTING - HCT534 INVERTING • HIGHSPEED fMAX = 62 MHz TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 4 nA (MAX.) AT T a = 25 °C ■ COMPATIBLE WITH TTL OUTPUTS
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54/74HC
HCT374
HCT534
54/74LS374/534
M54/74HCT374,
M54/74HCT534,
T374/534
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Untitled
Abstract: No abstract text available
Text: M 54/74HCT373 M 54/74HC T533 SGS-THOMSON ilLC OCTAL D-TYPE LATCH WITH 3 STATE OUTPUT HCT373 NON INVERTING - HCT533 INVERTING • HIGHSPEED tPD = 17 ns TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 4 nA (MAX.) AT Ta = 25 °C ■ COMPATIBLE WITH TTL OUTPUTS
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54/74HCT373
54/74HC
HCT373
HCT533
54/74LS373/533
M54/74HCT373
M54HCT533
T373/533
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54ACT
Abstract: ACT374 J16A OZ 9965
Text: & March 1993 54ACT/74 ACT534 Octal D Flip-Flop with TRI-STATE Outputs General Description Features The ’A C T534 is a high-speed, low -pow er octal D-type flip flo p featuring separate D-type inputs fo r each flip-flop and TR I-STATE outputs fo r bus-oriented applications. A b u ff
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54ACT/74ACT534
ACT534
ACT374
ACT374
54ACT
J16A
OZ 9965
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