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    DIODE T35 Search Results

    DIODE T35 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE T35 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    T589N

    Abstract: TO41 TO-50 TO57 disc thyristor TO100 D1029N D1049N D2209N D2659N
    Text: Anpreßkraft Scheibenbauelemente Clamping Force Disc-Components Diagramm: Federsäulenkurven 1 - 8 für Komplettsätze for complete stacks Diode Diode D428N D448N D660N D748N D758N D798N D1029N D1049N D2209N D2228N D2659N D5809N D8019N Anpreßkraft [kN] Clamping Force [kN]


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    D428N D448N D660N D748N D758N D798N D1029N D1049N D2209N D2228N T589N TO41 TO-50 TO57 disc thyristor TO100 D1029N D1049N D2209N D2659N PDF

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


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    1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m PDF

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


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    1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p PDF

    MZC300

    Abstract: No abstract text available
    Text: MZC300 MZA300 MZK300 MZ300 Fast Recovery Diode Modules Features: n Isolated mounting base 2500V~ Pressure contact technology with Increased power cycling capability n Space and weight savings Typical Applications n Inverter n Inductive heating n Chopper


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    MZC300 MZA300 MZK300 MZ300 415F3 MZK300 MKC300 415F3 PDF

    Untitled

    Abstract: No abstract text available
    Text: MZC400 MZA400 MZK400 MZ400 Fast Recovery Diode Modules Features: n Isolated mounting base 2500V~ Pressure contact technology with Increased power cycling capability n Space and weight savings Typical Applications n Inverter n Inductive heating n Chopper


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    MZC400 MZA400 MZK400 MZ400 406F3 MZK400 MKC400Vs 406F3 PDF

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE PDF

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23 PDF

    T161-160

    Abstract: SCR T161-160 t153-630 KP25A T123-250 tc171 ZP50A T143-630 SCR KP200A T151-100
    Text: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing phase control thyristors, rectifier diodes, high frequency thyristors, fast recovery diode and fast switching thyristors along with about 300 components.


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    ISO9001 to300 SF15CL 500Aelement T161-160 SCR T161-160 t153-630 KP25A T123-250 tc171 ZP50A T143-630 SCR KP200A T151-100 PDF

    T1081N

    Abstract: T553N eupec igbt EUPEC T1503N kuka-2003-inhalt.qxd T2351N T2563 T1049 T1601 T1869N
    Text: kuka-2003-inhalt.qxd 24.04.2003 IGBT 10:22 Uhr Seite 34 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 34 Overview Phase Control Thyristors in Disc Housings VDRM - Concept 8000 V T201N 7000 V 5200 V 5000 V 4800 V T501N T551N T553N


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    kuka-2003-inhalt T1901N T1503N T201N T1081N T1201N T501N T551N T553N T739N T1081N T553N eupec igbt EUPEC T1503N kuka-2003-inhalt.qxd T2351N T2563 T1049 T1601 T1869N PDF

    thyristor T 514

    Abstract: THYRISTOR t508n T508N T879N DIODE 409 1336 T1189N T1509N T1989N T358N T588N
    Text: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 700 V 800 V 1400 V 1600 V - Kühlblöcke für verstärkte Luftkühlung Temp. tA Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl


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    T358N T508N T588N T718N T879N T1189N T1509N T1989N thyristor T 514 THYRISTOR t508n T508N T879N DIODE 409 1336 T1189N T1509N T1989N T358N T588N PDF

    T1189N

    Abstract: T718N T1509N T358N T508N T588N T879N
    Text: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VRRM 700 V 800 V 1400 V 1600 V - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB Diode D Thyristor T Kühlblock KB [ltr/min] Anzahl KB pro Anzahl


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    T358N T508N T588N T718N T879N T1189N T1509N T1189N T718N T1509N T358N T508N T588N T879N PDF

    EUPEC Thyristor

    Abstract: T588N16TOF tt92n16kof TT162N16KOF TZ500N16KOF TT106N16KOF TT500N16KOF eupec scr thyristor scr scr 106
    Text: BACK NEXT HIGH POWER THYRISTORS AND DIODES Diode Thyristor 2 Features: 2 5 Features: 4 • Reverse Voltage up to 2800 Volts • Metal Ceramic Package • Reverse Voltage up to 4900 Volts • Metal Ceramic Package 1 Applications: • DC Motor Control for machine tools


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    641-T218N16TOF 641-T358N16TOF 641-T588N16TOF 641-T879N16TOF 641-T1189N18TOF 641-D428N18TOF 641-D798N16TOF 641-TT92N16KOF 641-TT106N16KOF 641-TT162N16KOF EUPEC Thyristor T588N16TOF tt92n16kof TT162N16KOF TZ500N16KOF TT106N16KOF TT500N16KOF eupec scr thyristor scr scr 106 PDF

    135 D 4 e

    Abstract: T718N THYRISTOR t508n T1189N T1509N T1989N T298N T358N T508N T588N
    Text: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 700 V 800 V 1400 V 1600 V - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock KB [ltr/s]


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    T298N T358N T508N T588N T718N T719N T1189N T1509N T1989N 135 D 4 e T718N THYRISTOR t508n T1189N T1509N T1989N T298N T358N T508N T588N PDF

    THYRISTOR t508n

    Abstract: k0.36s T718N T719N T1189N T1509N T1989N T298N T358N T508N
    Text: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 700 V 800 V 1400 V 1600 V - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock KB [ltr/s]


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    T298N T358N T508N T588N T718N T719N T1189N T1509N T1989N THYRISTOR t508n k0.36s T718N T719N T1189N T1509N T1989N T298N T358N T508N PDF

    Silicon Schottky Diode sod123

    Abstract: SCHOTTKY BARRIER DIODE BAT56 T35 diode diode T35 -4-D6
    Text: Philips Semiconductors Preliminary specification Schottky barrier diode FEATURES BAT56 QUICK REFERENCE DATA • Low leakage current SYMBOL PARAMETER CONDITIONS MAX. UNIT continuous reverse voltage 60 V If continuous forward current 30 mA vF forward voltage


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    BAT56 OD123 MBA038 OD123. 711Dfl2b Silicon Schottky Diode sod123 SCHOTTKY BARRIER DIODE BAT56 T35 diode diode T35 -4-D6 PDF

    c82 004

    Abstract: C4V7 517
    Text: N AUER PHILIPS/DISCRETE b=JE P • bb53^31 002b?ll 517 P hilips S em BZD23 series Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass


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    BZD23 BZD23-C3V6 BZD23-C7V5 C7V5-C510 bb53R31 2b71R S0D81. c82 004 C4V7 517 PDF

    BZD23

    Abstract: c6v8 C510 bje 66 C82 diode BZD23-C3V6 BZD23-C7V5 C100 C110 C120
    Text: N AUER PHILIPS/DISCRETE b=iE D ^ 5 3 ^ 3 1 DDEb?ll 517 Philips Semiconductors_ r IVM uwt Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass envelopes. They are intended for


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    bb53131 BZD23 BZD23-C3V6 BZD23-C7V5 C7V5-C510 bb53T31 D02ti713 MGA020 c6v8 C510 bje 66 C82 diode C100 C110 C120 PDF

    BUT35

    Abstract: transistors but35 CM4050
    Text: MOTO RO LA SC XSTRS/R F 12E D | b3L75S4 00840130 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 40 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 2 5 0 WATTS


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    b3L75S4 T-35-1? BUT35 BUT35 transistors but35 CM4050 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1571 International IG R Rectifier IR G 4 R C 1 0 U D PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200


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    O-252AA 140ns 4AS54S2 PDF

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE L 4 .0 S S MrafoBSTL . FEATURES o |SQUARE-PAK1 TO-263AB (SMD) Packaged in 24mm Tape and Reel : C10T-QH oTabless TO-220 : C10T-QH-11A oDual Diodes—Cathode Common OLow Forward Voltage Drop o High Surge Capability OTj=150°C operation


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    O-263AB C10T-QH O-220 C10T-QH-11A C10T04QH C10T04QH-11A 0A/40 -0T04QH bbl5123 PDF

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 PDF

    Schaffner NSG 223

    Abstract: LDP24M Schaffner NSG schaffner IT 223 load dump test MARKING 506C
    Text: fZ7 SGS-THOMSON LDP24M ^ 7 # R{i]Dra®ilL[lCT[^ S [jaD i TRANSIL LOAD DUMP PROTECTION FEATURES . TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION • HIGH SURGE CURRENT CAPABILITY: 30 A / 40 ms EXPONENTIAL WAVE ■ COMPLIANT WITH MAIN STANDARDS


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    LDP24M -SAEJ1113A SO-10â Schaffner NSG 223 LDP24M Schaffner NSG schaffner IT 223 load dump test MARKING 506C PDF

    T35 diode

    Abstract: diode T35 high voltage diode T35 L501130 FDH3595 MMBD7000 MMBD1501-1505
    Text: S e m i c o n d u c t o r " FDH3595 & Discrete POW ER & Signal Technologies „ . . National FDH3595 High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501-1505 for characteristics. Absolute Maximum Ratings* Symbol TA = 25*C unless otherwise noted


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    FDH3595 MMBD1501-1505 L501130 0040Sb3 T35 diode diode T35 high voltage diode T35 FDH3595 MMBD7000 PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF