LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID 0 1E STATE D 19652 Optoelectronic S p e cificatio n s_ HARRI S SEMICOND SECTOR 37E D I 4302271 • HAS 0027114 1 If 4 13 Infrared Emitter F5F1 Gallium Arsenide Infrared — Emitting Diode T he G E Solid S tate F 5 F I is a G allium -A rsenide, infrared em itting diode which
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S-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E 19826 D Optoelectronic Specifications. T-m-13 HARRIS SEMI COND SECTOR 37E D H 4302271 0027200 1 MHAS Photon Coupled Interrupter Module C N Y 28 T he G E Solid S tate CNY28 is a gallium arsenide infrared em itting diode coupled w ith a silicon p h o to tran sisto r in a plastic housing. T he
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T-m-13
CNY28
92CS-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 37E D 4302571 Ü Ü S V at t . [HAS 2 Optoelectronic Specifications_ T -W I-7 Í M atched Emitter-Detector Pair H23L1 •vu. A B Bi The G E Solid State H23L1 is a matched emitter-detector pair which consists o f a gallium arsenide, infrared emitting diode and a
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H23L1
H23L1
S-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: a RHRP6120CC HARRIS S E M I C O N D U C T O R juiy 1996 6A, 1200V Hyperfast Dual Diode Features Description • Hyperfast with Soft R ecovery. <55ns • Operating T em p eratu
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RHRP6120CC
O-220AB
00b7237
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CNY47/47A
Abstract: No abstract text available
Text: 3875081 G E S O L ID STATE Optoelectronic Specifications_ H A R R IS S EfllC O N D S EC T O R 01E 3?E D B 4302571 19846 D G0e73afl T-W I • HAS 3 Photon Coupled Isolator C N Y47,CN Y47A Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor INCH
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G0e73afl
CNY47
S-42662
92CS-429S1
CNY47/47A
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Untitled
Abstract: No abstract text available
Text: H A R R IS SEM IC O ND SECTOR 37E ]> 4302271 D02733Ö 1 B IH A S Optoelectronic Specifications. T -Hi-53 Photon Coupled Isolator MCT210 G aA s In fra re d E m ittin g Diode & NPN Silicon Photo-T ransistor The GE Solid State MCT210 is a gallium arsenide, infrared emitting
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D02733Ã
-Hi-53
MCT210
MCT210
E51868
92CS-42662
92CS-428S1
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Untitled
Abstract: No abstract text available
Text: 3 87 5081 G E SOLID 01E STATE Optoelectronic Specifications_ 19816 - HARRIS SEMICOND SECTOR 37E D I D T- '//: / / •43GE571 0027270 T ■ HAS Infrared Emitter CQX14, CQX15, CQX16, CQX17 G alliu m Arsenide In fra re d -E m ittin g Diode
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43GE571
CQX14,
CQX15,
CQX16,
CQX17
92CS-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SO LID 01E STATE 19648 D Optoelectronic Specifications -• -t c q t -t è H A RR IS SEM-ICOND S E C T O R 37E D 43 0 5 27 1 G G 2 7 1 1 0 4 ■ HAS Infrared Emitter FSDl,F5D2,F5D3,F5E1, F5E2,F5E3 Gallium Aluminum Arsenide Infrared — Emitting Diode
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S-42662
92CS-429S1
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RUR30120
Abstract: MOSFET 1200v 30a
Text: HARRIS S E MI C ON D SECTOR b5E D W t 4302271 7Tì HHAS RUR30120 h a f r r is SE MI C O N D U C TO R M È % èJ È • \J 30A, 1200V Ultrafast Diode February 1993 Features G DM T HI Q Package TO-220AB • Ultrafast with Soft Recovery. <11 Ons
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RUR30120
110ns)
1-800-4-HARRIS
RUR30120
MOSFET 1200v 30a
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID 01E STATE Optoelectronic S p ecificatio n s- HARRI S SEIHCOND 19642 D - T4I-M SECTOR 37E D M 43G2E71 G0271QM Infrared Emitter T • 1N 6264 1N6264,1N6265 Gallium Arsenide Infrared — Em itting Diode T T he G E Solid State 1N6264 and 1N6265 Series are gallium arsenide, light
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43G2E71
G0271QM
1N6264
1N6265
1N6265
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 0 1E 19858 D Optoelectronic Specifications_ T - Í //- S 3 HARRIS SEMICOND SECTOR 37E D I M305571 Photon Coupled Isolator GEPS2001 0057350 ! M IL L IM E T E R S J O T M B Jkr M IN . ; M A X . Ga As Infrared Em itting Diode & NPN Silicon Photo-Transistor
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M305571
GEPS2001
GEPS2001
92CS-42662
92CS-429S1
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lt 748 diodes
Abstract: No abstract text available
Text: HARRIS SEfllCOND SECTOR K£U 4ÜE T> 4302571 OöaS-ail-O- B HAS C&3141 HARRIS High-Voltage Diode Array For Commercial, industrial & Military Applications A u g u s t 1 99 1 Features Description • M a tch e d M on o lith ic C o n stru c tio n - V p for E a c h Dio de
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A3141
CA3141
16-load
lt 748 diodes
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Untitled
Abstract: No abstract text available
Text: -»wMtflggfcaA.«» sE r^ Y p tfn f.-^ a iir-r,- HARRIS SEMICOND SECTOR 37E D rr "irrriirT iaj-if! t , M302271 DGE7330 7 • HAS Optoelectronic Specifications_ T-m-ZS Photon Coupled Isolator MCA230, MCA231, MCA255 GaAs Infrared Emitting Diode & N’PN Silicon Darlington Connected Phototransistor
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M302271
DGE7330
MCA230,
MCA231,
MCA255
E51868
92CS-42662
92CS-429S1
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600V 25A Ultrafast Diode
Abstract: IRL 724 N TA09903 RURP3060
Text: RURP3060 in t e f s il Data Sheet J a n u a r y 200 0 File N u m b e r 2776 . 4 30A, 600V Ultra fast Diode Features The RURP3060 is an ultrafast diode trr < 55ns with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated, ion-implanted,
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RURP3060
RURP3060
TA09903.
O-220AC
RURP306iption
43GES71
600V 25A Ultrafast Diode
IRL 724 N
TA09903
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E 19848 D Optoelectronic Specifications_ T - u /j. HARRIS SEMIC0N» SECTOR 37E D 430SS71 G02731Q 1 Photon Coupled Isolator C N Y 4 8 M IL L I M E T E R S SW 80L- Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier
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430SS71
G02731Q
CNY48
S-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E optoelectronic S p e c ific a tio n s_ HARRIS SEMICOND SECTOR 19734 T W i-SS 37E D 43G2271 0 D 2 7 n t IH A S 7 Photon Coupled Isolator H11G3 Ga As Infrared Emitting Diode & NPN Silicon Darlington Connected P hototransistor
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43G2271
H11G3
S-42662
92CS-429S1
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CNY17 Harris
Abstract: CNY17 III
Text: 3875081 G E S O L ID STATE 01E 19822 Optoelectronic Specifications _ T HARRIS SEMICOND SECTOR 37E D I - m - S 4305271 D0272Û4 4 * H A S Photon Coupled Isolator CN Y17 Ga As Infrared Emitting Diode & npn Silicon Photo - Transistor T h e G E Solid S tate CN Y17 consists o f a gallium arsenide infrared
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D0272
92CS-429S1
CNY17 Harris
CNY17 III
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SO LID 0 1E STATE D 19656 Optoelectronic Specifications_ H A RR IS S E M I C O N D S E C T O R T 37E D B 4 3 02 27 1 0027116 1 -4 I- I HAS Infrared Emitter LED55B, LED55C, LED56, LED55BF, LED55CF, LED56F " Gallium Arsenide Infrared-Emitting Diode
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LED55B,
LED55C,
LED56,
LED55BF,
LED55CF,
LED56F
LED55B-LED55C-LED56
LED55C
LED56
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Untitled
Abstract: No abstract text available
Text: 0 1E 3 8 7 5 0 8 1 G E S O L I D STATE Optoelectronic Specifications — HARRIS SEMICON» SECTOR 37E D B 4302571 19686 0057145 Photon Coupled Isolator H11A1, H11A2, H11A3, HT1A4, H11A5 T W J-S 3 ? *H A S Ga As Infrared Em itting Diode & NPN Silicon Photo-Transistor
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H11A1,
H11A2,
H11A3,
H11A5
92CS-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E 19802 Optoelectronic Sp e c ific atio n s_ H A R R IS SEMICOND S EC T O R 37E D 43G2271 Matched Emitter-Detector Pair H23B1 SYM T he G E Solid State H 23B 1 is a matched emitter-detector pair which consists o f a gallium arsenide, infrared emitting diode and a silicon,
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43G2271
H23B1
S-429S1
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E 19844 D Optoelectronic Specifications HARRI S SEMICOND 3 7E SECTOR •4305271 D Photon Coupled Interrupter Module C N Y 3 6 T he G E Solid S ta te C N Y36 is a gallium arsenide infrared em itting diode coupled w ith a silicon p h o to tran sisto r in a plastic housing. T he
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QG5730b
92CS-42662
92CS-429S1
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