BAV70LT1
Abstract: BAV70LT1G BAV70LT3 BAV70LT3G
Text: BAV70LT1 Preferred Device Dual Switching Diode Common Cathode Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA Symbol Max Unit
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BAV70LT1
OT-23
O-236)
25laws
BAV70LT1/D
BAV70LT1
BAV70LT1G
BAV70LT3
BAV70LT3G
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MMBD6100LT1
Abstract: MMBD6100LT1G MMBD6100LT3 MMBD6100LT3G
Text: MMBD6100LT1 Monolithic Dual Switching Diode Features • Pb−Free Packages are Available MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit Peak Forward Surge Current
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MMBD6100LT1
MMBD6100LT1
MMBD6100LT1G
MMBD6100LT3
MMBD6100LT3G
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MMBD6100LT1
Abstract: MMBD6100LT1G MMBD6100LT3 MMBD6100LT3G
Text: MMBD6100LT1 Monolithic Dual Switching Diode Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit Peak Forward Surge Current
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MMBD6100LT1
MMBD6100LT1/D
MMBD6100LT1
MMBD6100LT1G
MMBD6100LT3
MMBD6100LT3G
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BAW56LT1
Abstract: BAW56LT1G BAW56LT3 BAW56LT3G
Text: BAW56LT1 Preferred Device Dual Switching Diode Common Anode Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA 4 A Symbol Max Unit
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BAW56LT1
OT-23
O-236)
BAW56LT1/D
BAW56LT1
BAW56LT1G
BAW56LT3
BAW56LT3G
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BAV74LT1G
Abstract: BAV74LT1 BAV74LT3 BAV74LT3G
Text: BAV74LT1 Monolithic Dual Switching Diode Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS EACH DIODE ANODE 1 3 CATHODE 2 ANODE Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol
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BAV74LT1
OT-23
BAV74LT1/D
BAV74LT1G
BAV74LT1
BAV74LT3
BAV74LT3G
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TO236 footprint
Abstract: BAW56LT1 BAW56LT1G BAW56LT3 BAW56LT3G 556 square wave generator
Text: BAW56LT1 Preferred Device Dual Switching Diode Common Anode Features • Pb−Free Packages are Available MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA 4 A Symbol Max Unit PD 225 mW Rating
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BAW56LT1
OT-23
O-236)
TO236 footprint
BAW56LT1
BAW56LT1G
BAW56LT3
BAW56LT3G
556 square wave generator
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BAV74LT1
Abstract: BAV74LT1G BAV74LT3 BAV74LT3G Diode marking CODE 5M
Text: BAV74LT1 Monolithic Dual Switching Diode Features • Pb−Free Packages are Available MAXIMUM RATINGS EACH DIODE ANODE 1 3 CATHODE 2 ANODE Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 1.8
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BAV74LT1
OT-23
BAV74LT1
BAV74LT1G
BAV74LT3
BAV74LT3G
Diode marking CODE 5M
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BAV70LT1
Abstract: BAV70LT1G BAV70LT3 BAV70LT3G Diode marking CODE 5M
Text: BAV70LT1 Preferred Device Dual Switching Diode Common Cathode Features • Pb−Free Packages are Available MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA Symbol Max Unit PD 225 mW 1.8 mW/°C
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BAV70LT1
OT-23
O-236)
BAV70LT1
BAV70LT1G
BAV70LT3
BAV70LT3G
Diode marking CODE 5M
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Q62702-A1031
Abstract: marking code AC sot 323 diode
Text: BAW 56W Silicon Switching Diode Array • For high speed switching applications • Common anode Type Marking Ordering Code Pin Configuration BAW 56W A1s 1 = C1 Q62702-A1031 2=C2 Package 3=A1/A2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage
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Q62702-A1031
OT-323
Nov-28-1996
Q62702-A1031
marking code AC sot 323 diode
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BYC10-600CT Dual rectifier diode ultrafast, low switching loss Product specification March 2001 NXP Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10-600CT SYMBOL • Dual diode
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BYC10-600CT
BYC10-600CT
O220AB)
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A1030 transistor
Abstract: Q62702-A1030 marking code a4s
Text: BAV 70W Silicon Switching Diode Array • For high speed switching applications • Common cathode Type Marking Ordering Code Pin Configuration BAV 70W A4s 1 = A1 Q62702-A1030 2 = A2 Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage
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Q62702-A1030
OT-323
Nov-28-1996
A1030 transistor
Q62702-A1030
marking code a4s
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BYC10-600CT Dual rectifier diode ultrafast, low switching loss Product specification March 2001 NXP Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10-600CT SYMBOL • Dual diode
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BYC10-600CT
O220AB)
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Q62702-A1051
Abstract: A7S marking code A1051 Q62702A1051
Text: BAV 99W Silicon Switching Diode Array • Connected in series • For high speed switching applications Type Marking Ordering Code Pin Configuration BAV 99W A7s 1=A1 Q62702-A1051 2=C2 Package 3=C1/A2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage
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Q62702-A1051
OT-323
Apr-03-1997
Q62702-A1051
A7S marking code
A1051
Q62702A1051
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chip Marking 3A3
Abstract: Diode BGX50A BGX50A VPS05178
Text: BGX50A Silicon Switching Diode Array 3 Bridge configuration High-speed switching diode chip 4 2 1 2 3 VPS05178 1 4 EHA00007 Type BGX50A Marking U1s Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 4=A2/C3 Package SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage
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BGX50A
VPS05178
EHA00007
OT143
EHB00147
EHB00148
Jul-31-2001
EHB00149
chip Marking 3A3
Diode BGX50A
BGX50A
VPS05178
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SC82
Abstract: No abstract text available
Text: 1SS383T1 Preferred Device Dual Schottky Diode MAXIMUM RATINGS TA = 25°C Symbol Max Unit Continuous Reverse Voltage VR 40 V Maximum Peak Forward Current* IFM 300 mA IFM(surge) 500 mA 4 3 Symbol Max Unit 1 2 Symbol Max Unit PD 200 (Note 1) 1.6 (Note 1) mW
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1SS383T1
SC-82
1SS383T1
SC-82
3000/Tape
1SS383T1/D
SC82
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A1s sot23
Abstract: SOT-23 marking a1s Q62702-A688 MARKING CODE SOT23 A1S a1s, sot-23 sot23 a1s A1S diode
Text: Silicon Switching Diode Array BAW 56 For high-speed switching applications ● Common anode ● Type Marking Ordering Code tape and reel BAW 56 A1s Q62702-A688 Pin Configuration Package1) SOT-23 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage
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Q62702-A688
OT-23
A1s sot23
SOT-23 marking a1s
Q62702-A688
MARKING CODE SOT23 A1S
a1s, sot-23
sot23 a1s
A1S diode
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A1S diode
Abstract: A1s sot23 a1s sot-23 diode a1s SOT-23 marking a1s a1s package Q62702-A688 transistor A688 a1s, sot-23 SOT 23 A1S
Text: Silicon Switching Diode Array BAW 56 For high-speed switching applications ● Common anode ● Type Marking Ordering Code tape and reel BAW 56 A1s Q62702-A688 Pin Configuration Package1) SOT-23 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage
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Q62702-A688
OT-23
A1S diode
A1s sot23
a1s sot-23
diode a1s
SOT-23 marking a1s
a1s package
Q62702-A688
transistor A688
a1s, sot-23
SOT 23 A1S
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Q62702-A1050
Abstract: a6s marking A1050 A6s DIODE diode A6s
Text: BAS 16W Silicon Switching Diode • For high speed switching applications Type Marking Ordering Code Pin Configuration BAS 16W A6s 1=A Q62702-A1050 Package 3=C SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM 85
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Q62702-A1050
OT-323
40mmm
Nov-28-1996
Q62702-A1050
a6s marking
A1050
A6s DIODE
diode A6s
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAV 70S Silicon Switching Diode Array Type Marking Ordering Gode BAV 70S A4s Pin Configuration Q62702-A1097 1/4=A1 2/5=A2 Package 3/6=C1/2 SOT-363 Maximum Ratings per Diode Symbol Parameter Values 70 Diode reverse voltage Peak reverse voltage Forward current
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Q62702-A1097
OT-363
40mmm
535bQ5
aH35fc
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAS 16-03W Silicon Switching Diode Preliminary data • For high-speed switching applications Type Marking Ordering Code Pin Configuration Package BAS 16-03W B Q62702-A1231 1=A SOD-323 2=C Maximum Ratings Symbol Parameter Value 75 Diode reverse voltage
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6-03W
Q62702-A1231
OD-323
100ns,
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAS 28W Silicon Switching Diode Array For high-speed switching applications Electrical insulated diodes Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 =C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings Symbol Diode reverse voltage
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OCR Scan
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Q62702-A3466
OT-343
EHN00019
100ns,
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAS 16-03W Silicon Switching Diode Preliminary data • For high-speed switching applications Type Marking Ordering Code Pin Configuration Package BAS 16-03W B Q62702-A1231 1=A SOD-323 2=C Maximum Ratings Parameter Symbol Diode reverse voltage Vr 75
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6-03W
Q62702-A1231
OD-323
100ns,
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diode a4s
Abstract: marking code fs 1 sot 323 A4s diode
Text: SIEMENS BAV 70W Silicon Switching Diode Array •For high speed switching applications ■Common cathode Type Marking Ordering Code Pin Configuration BAV 70W A4s 1 =A1 Q62702-A1030 2 = A2 Package 3 = C1/CÍ SOT-323 Maximum Ratings per Diode Parameter Symbol
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OCR Scan
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Q62702-A1030
OT-323
40mmm
diode a4s
marking code fs 1 sot 323
A4s diode
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marking E7B
Abstract: No abstract text available
Text: SIEMENS BAW56 Silicon Switching Diode Array • For high-speed switching applications • Common anode Type Marking Ordering Code tape and reel B A W 56 A1s Q62702-A688 Pin Configuration Package1) 3 SOT-23 EHMHW Maximum Ratings per Diode Parameter Symbol
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OCR Scan
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BAW56
Q62702-A688
OT-23
02BSb05
23StOS
01S048M
235b05
marking E7B
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