VK334V
Abstract: diode sy 715 VK332E tabela varistor VK334Y 220v ac solenoid valve VKF334-G-01 ozono VK332W "DIODE" SY 171
Text: 3 Port Direct Operated Poppet Solenoid Valve Rubber Seal Series VK300 Model Universal porting Valve Model Available for N.C. valve, N.O. valve, divider valve, selector valve, etc. Nl/min: 196 Compact/Width 18 X Length 63 mm Low consumption 4W DC (Standard)
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VK300
VK332
VK332Y
VK332E
VK332V
VK332W
VK334
VK334Y
VK334E
VK334V
diode sy 715
VK332E
tabela varistor
VK334Y
220v ac solenoid valve
VKF334-G-01
ozono
VK332W
"DIODE" SY 171
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SYJ3120-5G-M3-Q
Abstract: DXT170-71-1 SYJ3000-14-6 VJ7000 VJ3000-13-1 SYJ3000-21-2A-Q SYJ3000-21-1A-Q diode sy 166 SYJ5143-5LOU-Q SY100-30-4A
Text: 4, 5 Port Solenoid Valve Rubber Seal Series SYJ3000/5000/7000 SV Low power consumption: 0.5W Without light SY (Current draw: 21mA at 24V DC) SYJ Bright colour tone and state of the art design SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD Completely interchangeable with
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SYJ3000/5000/7000
VJ3000/5000/7000
VZ3000/5000
VJ3000/5000/7000
VZ3000/5000.
SYJ3000
VJ3000
SYJ5000
VJ5000
VZ3000
SYJ3120-5G-M3-Q
DXT170-71-1
SYJ3000-14-6
VJ7000
VJ3000-13-1
SYJ3000-21-2A-Q
SYJ3000-21-1A-Q
diode sy 166
SYJ5143-5LOU-Q
SY100-30-4A
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SMC - SY5120
Abstract: SMC SY313 omron G71-OD16 SY7120 G71-OD16 SY340 431a1 diode sy GVVZS3000-21A-2 19n marking 2 pin diode
Text: High Capacity & Simple Choices Series SY 5 Port Rubber Seal Solenoid Valve SV SY SYJ SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD VFS VS VS7 VQ7 Series SY9000 newly realased 1.2-1 CE Marking Compliant Products The SY series complies with the EMC Directive and the Low Energy Directive based
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SY9000
SY3000
SY5000
SY7000
SMC - SY5120
SMC SY313
omron G71-OD16
SY7120
G71-OD16
SY340
431a1
diode sy
GVVZS3000-21A-2
19n marking 2 pin diode
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smc vt301
Abstract: diode P033 breather valve VT317V solenoid direction control valve connection 220v ac 220v ac solenoid valve L146 DXT060-51-13 varister symbol VT307E
Text: 3 Port Direct Operated Poppet Rubber Seal Series VT307 Model Large Flow Capacity, yet Compact Size. Dimensions W X H X D •·····30 X 54.5 X 33 VT307······Nl/min 206.02 or more, 1/4 Low Power Consumption VT/VO307······4.8W DC/Standard Style
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VT307
VT307·
VT/VO307·
VT/VO307Y
VT/VO307W
VT/VO307V,
VT/VO307W)
VT307E
VT307Y
smc vt301
diode P033
breather valve
VT317V
solenoid direction control valve connection 220v ac
220v ac solenoid valve
L146
DXT060-51-13
varister symbol
VT307E
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5mo 365 r
Abstract: SY5000-26-1A-Q 68705 SX3140-5LOZ-Q VVQ1000-51A-C8 dxt170-75-1 SY3000-11-14 SX3120 diode sx34 PH ON 823 m 8833
Text: 5 Port Solenoid Valve Rubber Seal Series SX All pilot valves are located on the same side of the manifold. Pilot valves single & double solenoid on one side permit not only a reduction in the size of the valve but also a single wiring direction. In addition, this
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X90-Q
5mo 365 r
SY5000-26-1A-Q
68705
SX3140-5LOZ-Q
VVQ1000-51A-C8
dxt170-75-1
SY3000-11-14
SX3120
diode sx34
PH ON 823 m 8833
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Untitled
Abstract: No abstract text available
Text: 2: 22 AM TSE Nx160 ASSP Telecom Standard Product Data Sheet Released Au g es da y, 03 TSE Nx160 us t, 20 04 11 :0 PM5376 Data Sheet Proprietary and Confidential Released Issue No. 7: July 2004 Do wn lo ad ed by Sa nj iv Sh ar m ao fR SB SY ST EM S on Tu BIT SLICED TRANSMISSION SWITCH
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Nx160
Nx160
PM5376
PMC-2012687,
-35x35
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CCIR601
Abstract: CCIR656 TMC2192 y736 diode MARKING cbn FR17 diode ST163E
Text: www.cadeka.com TMC2192 10 Bit Encoder Features • Multiple input formats – 20 bit CCIR601 – 10 bit CCIR656 – 10 bit Digital Composite • Synchronization modes – Master – Slave – Genlock – CCIR656 • Subcarrier modes – Free-run – Subcarrier reset
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TMC2192
CCIR601
CCIR656
100-pin
TMC2192KHC
DS30002192
CCIR601
CCIR656
TMC2192
y736
diode MARKING cbn
FR17 diode
ST163E
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PDF
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bd-9a
Abstract: led matrix 8 8 one colour ST-163E ph-12 diode TIP 317 data sheet CCIR601 CCIR656 TMC2192 FR17 diode
Text: www.fairchildsemi.com TMC2192 10 Bit Encoder Features Programmable color space matrix 8:8:8 video reconstruction Three 10 bit D/A’s with independent trim Individual power down modes for each D/A Multiple output formats – S-video – Composite – Digital composite output
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TMC2192
DS30002192
bd-9a
led matrix 8 8 one colour
ST-163E
ph-12 diode
TIP 317 data sheet
CCIR601
CCIR656
TMC2192
FR17 diode
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PDF
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diode sy 345
Abstract: diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337
Text: SERVICE-MITTEILUNGEN V E B R F T I N D U S T R I E V E R T R I E B R U N D F U N K UND F E R N S E H E N t B i n n a |r a d i o - t e l e v i s i o n I Ausgobe 1-2 _ _ Febr. 89 1-7 Mitteilung aus dam VEB RFT IV RuF Leipzig, Organisation Plan der Inventurtermine Ersatztell/sroßhandel 1989
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III/18/379
diode sy 345
diode SY 192
sd 339
sy 320 diode
SD 338
SY 345
KT 829 b
k3451
KT 828 A
SD337
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BUK455-400B
Abstract: T0220AB
Text: N ACIER P H I L I P S / D I S C R E T E b^E D • bhSBTBl 0D3GbS5 3 1 2 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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QQ30tiS5
BUK455-400B
T0220AB
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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BUK442
Abstract: BUK442-60A BUK442-60B 1e47
Text: 7 ^ 3 9 - 0 ? Philips Components Data sheet status Preliminary specification d ate of issue March 1991 PHILIPS PowerMOS transistor SbE T> INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent m ode field-effect pow er transistor in a lastic full-pack envelope,
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BUK442-60A/B
711002b
-SOT186
BUK442
BUK442-60A
BUK442-60B
1e47
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Halbleiterbauelemente DDR
Abstract: sy 170 diode sy-180 diode sy 171 10 diode sy-170 mikroelektronik DDR mikroelektronik Heft 12 VEB mikroelektronik SY 180 Applikation Information
Text: m o ß ^ t s ie le l- c ia n o r ill- i Information Applikation INFORMATION A PPLIKA TIO N M IK R O E L E K T R O N IK Heft 16: L E IS T U N G S -E L E K T R O N IK II Bauelemente-Sortiment der DDR -Teil 1: Dioden- VEB GLEICHRICHTERWERK STAHNSDORF im VEB Kombinat Mikroelektronik
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TRANSISTOR 132-gd
Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Text: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n
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06o3H
TRANSISTOR 132-gd
TRANSISTORS 132 GD
equivalent io transistor 131-G
bbc ds diodes DS 1,8
transistor vergleichsliste
aeg diode Si 61 L
AF124
Transistor Vergleichsliste DDR
OC1044
bbc ds diodes
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GP 809 DIODE
Abstract: BUZ,271
Text: SIEMENS BUZ 271 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type BU Z 271 Vos -50 V b -22 A flbsion Package Ordering Code 0.15 n TO-220 A B C67078-S1453-A2 Maximum Ratings Parameter Symbol Continuous drain current Values
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O-220
C67078-S1453-A2
GP 809 DIODE
BUZ,271
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transistor buz 311
Abstract: Buz 304 C67078-S1305-A4 T-150 diode sy 104 SIEMENS mcx
Text: SIEMENS BUZ 40 B SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 40 B Vds 500 V Id 8.5 A flDS on 0.8 n Package Ordering Code TO-220 AB C67078-S1305-A4 Maximum Ratings Parameter Symbol Values Continuous drain current
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T35I55
O-220
C67078-S1305-A4
fl235b05
A235bD5
transistor buz 311
Buz 304
C67078-S1305-A4
T-150
diode sy 104
SIEMENS mcx
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PDF
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FESS 006
Abstract: 351-07 A1307 C67078-A1307-A5 M20D buz 353 siemens 350 98 O
Text: SIEMENS BUZ 50 C SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 50 C Vbs 1000 V b wDS on Package Ordering Code 2.3 A 6Q TO-220 AB C67078-A1307-A5 Maximum Ratings Parameter Symbol Drain source voltage Vtis Drain-gate voltage ^DGR Values
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O-220
C67078-A1307-A5
fl235b05
AE35b05
FESS 006
351-07
A1307
C67078-A1307-A5
M20D
buz 353
siemens 350 98 O
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PDF
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VEB mikroelektronik
Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft
Text: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP
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57AHNSDORP
VEB mikroelektronik
Mikroelektronik Information Applikation
mikroelektronik Heft 12
Radio Fernsehen Elektronik 1977 Heft 9
information applikation
information applikation mikroelektronik
mikroelektronik DDR
Halbleiterbauelemente DDR
aktive elektronische bauelemente ddr
mikroelektronik Heft
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PDF
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PC 014
Abstract: No abstract text available
Text: SIEMENS BUZ 12 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 12 Vbs 50 V b 42 A RoS on Package Ordering Code 0.028 n TO-220 AB C67078-S1331-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1331-A2
PC 014
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PDF
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VEB mikroelektronik
Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
Text: H albleiter-B auelem ente Semiconductors D ie vorliegend e Übersicht en th ält in g ed rä n g te r Form d ie wichtigsten G renz- und Kenn d aten d e r in d er D D R g efertigten H a lb le ite rb au e le m e n te . Dem A n w en der soll durch diese Übersicht die Auswahl der jew eils in Frage kom menden
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Untitled
Abstract: No abstract text available
Text: N ANER PHILIPS/DISCRETE LTE D bbS3S31 DD30Mfl0 70b « A P X Product Specification Philips Semiconductors BUK437-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in
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OCR Scan
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bbS3S31
DD30Mfl0
BUK437-400B
gat20
bb53T31
DQ30Mfl3
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors Data Com m unications Products Product specification Transimpedance amplifier 280MHz DESCRIPTION NE5210 PIN CONFIGURATION The NE5210 is a 7kQ transim pedance wide band, low noise am plifier with differential outputs, particularly suitable fo r signal
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280MHz)
NE5210
NE5210
280MHz
850nm
NE5214
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PDF
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876-1421
Abstract: No abstract text available
Text: > O LmFmiTY M i c- K o T he I n f i n i t e P h i h c: i o whr of k o I N i . n n o H s Transient I mmune Undervoltage Sensing P roducti on v a t i o n KEY DESCRIPTION Circuit D ata FEATURES FULLY CHARACTERIZED, TRANSIENT IMMUNE INPUT STAGE (See Product Highlight
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diode L2
Abstract: No abstract text available
Text: MG30V2YS40 U n i t in m m HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • T h e E le c tro d e s a r e I s o la te d from C a se. • H ig h I n p u t Im p e d a n c e • I n c lu d e s a C o m p le te H a l f B rid g e in O ne Package.
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MG30V2YS40
2-94D
diode L2
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