C-150
Abstract: IRFI840G IRGIB6B60KD PD944
Text: PD-94427C IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94427C
IRGIB6B60KD
O-220
IRFI840G
O-220
C-150
IRFI840G
IRGIB6B60KD
PD944
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transistor c 2335
Abstract: C-150 IRFI840G IRGIB15B60KD1
Text: PD- 94599 IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGIB15B60KD1
O-220
IRFI840G
O-220
transistor c 2335
C-150
IRFI840G
IRGIB15B60KD1
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Untitled
Abstract: No abstract text available
Text: PD - 94385A IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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4385A
IRGB5B120KD
O-220
O-220AB
IRF1010
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Untitled
Abstract: No abstract text available
Text: PD- 94914 IRGIB15B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGIB15B60KD1PbF
O-220
O-220
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Untitled
Abstract: No abstract text available
Text: PD-94427A IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94427A
IRGIB6B60KD
O-220
IRFI840G
O-220
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420 Diode
Abstract: 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A
Text: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGPS40B120UDP
Super-247
Super-247TM
PS37N50A
IRFPS37N50A
420 Diode
719C
IRGPS40B120UDP
IRFPS37N50A
1000V 20A transistor
UJ3000
igbt 1200V 60A
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diode 10a 400v
Abstract: 10a 400v bipolar transistor transistor IRF 630 ultrafast diode 10a 400v ultrafast swiching transistor C-150 IRFI840G IRGIB10B60KD1
Text: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94576A
IRGIB10B60KD1
O-220
Param99
IRFI840G
O-220
diode 10a 400v
10a 400v bipolar transistor
transistor IRF 630
ultrafast diode 10a 400v
ultrafast swiching transistor
C-150
IRFI840G
IRGIB10B60KD1
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TRANSISTOR BIPOLAR 400V 20A
Abstract: C-150 IRFI840G IRGIB10B60KD1
Text: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94576A
IRGIB10B60KD1
O-220
IRFI840G
O-220
TRANSISTOR BIPOLAR 400V 20A
C-150
IRFI840G
IRGIB10B60KD1
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PDF
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C-150
Abstract: IRGIB10B60KD1P
Text: PD - 94913 IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGIB10B60KD1P
O-220
O-220
C-150
IRGIB10B60KD1P
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transistor irf 645
Abstract: diode 400v 2A ultrafast AN-994 C-150 IRFR120 IRFU120 IRGR3B60KD2 R120 all transistor IRF 310 RG3250
Text: PD - 94601A IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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4601A
IRGR3B60KD2
EIA-481
EIA-541.
EIA-481.
transistor irf 645
diode 400v 2A ultrafast
AN-994
C-150
IRFR120
IRFU120
IRGR3B60KD2
R120
all transistor IRF 310
RG3250
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C-150
Abstract: IRGIB6B60KD ANSI PD-94427D
Text: PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94427D
IRGIB6B60KD
O-220
O-220
C-150
IRGIB6B60KD
ANSI
PD-94427D
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transistor BR 9013
Abstract: C-150 IRFI840G IRGIB15B60KD1 swiching 30A current source
Text: PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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4599A
IRGIB15B60KD1
O-220
IRFI840G
O-220
transistor BR 9013
C-150
IRFI840G
IRGIB15B60KD1
swiching 30A current source
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C-150
Abstract: IRFI840G IRGIB10B60KD1
Text: PD-94576 IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94576
IRGIB10B60KD1
O-220
IRFI840G
O-220
C-150
IRFI840G
IRGIB10B60KD1
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IGBT 900v 60a
Abstract: No abstract text available
Text: PD - 95617 IRGB5B120KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGB5B120KDPbF
O-220
O-220AB
O-220AB
IGBT 900v 60a
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800v irf
Abstract: IGBT 900V 80A ir igbt 1200V 40A IRF 725 IRGP8B120KD-E 40A vp
Text: PD - 94386A IRGP8B120KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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4386A
IRGP8B120KD-E
O-247AD
O-247AD
O-247
800v irf
IGBT 900V 80A
ir igbt 1200V 40A
IRF 725
IRGP8B120KD-E
40A vp
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diode 30a 400v
Abstract: 12V 30A diode 1085 CT 600v 30a IGBT C-150 IRGP30B60KD-E
Text: PD - 94388B IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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94388B
IRGP30B60KD-E
O-247AD
O-247AD
diode 30a 400v
12V 30A diode
1085 CT
600v 30a IGBT
C-150
IRGP30B60KD-E
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C-150
Abstract: IRF1010 IRF530S IRGB15B60KD IRGS15B60KD IRGSL15B60KD IRL3103L
Text: PD - 94383C IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94383C
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
O-220AB
O-220AB
AN-994.
O-220
C-150
IRF1010
IRF530S
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
IRL3103L
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IRGP30B60
Abstract: C-150 IRGP30B60KD-E
Text: PD - 94388A IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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4388A
IRGP30B60KD-E
O-247AD
O-247AD
IRGP30B60
C-150
IRGP30B60KD-E
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PDF
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IRGB10B60KD
Abstract: C-150 IRF1010 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
Text: PD - 94382C IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94382C
IRGB10B60KD
IRGS10B60KD
IRGSL10B60KD
O-220AB
O-262
O-220AB
IRGB10B60KD
C-150
IRF1010
IRF530S
IRGS10B60KD
IRGSL10B60KD
IRL3103L
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94388 IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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IRGP30B60KD-E
O-247AD
O-247AD
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IRGPS40B120UD
Abstract: ic MARKING QG IRFPS37N50A 1000V 20A transistor
Text: PD- 94240A IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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4240A
IRGPS40B120UD
Super-247
Super-247TM
Super-247TM
IRFPS37N50A
IRFPS37N50A
IRGPS40B120UD
ic MARKING QG
1000V 20A transistor
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irf 1830
Abstract: diode 10a 400v C-150 IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L irf 607
Text: PD - 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94382D
IRGB10B60KD
IRGS10B60KD
IRGSL10B60KD
O-220AB
O-262
AN-994.
irf 1830
diode 10a 400v
C-150
IRGB10B60KD
IRGS10B60KD
IRGSL10B60KD
IRL3103L
irf 607
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PDF
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C-150
Abstract: IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD transistor* igbt 70A 300 V
Text: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94381E
IRGB6B60KD
IRGS6B60KD
IRGSL6B60KD
O-220AB
O-262
AN-994.
C-150
IRF530S
IRGB6B60KD
IRGS6B60KD
IRGSL6B60KD
transistor* igbt 70A 300 V
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IRGB5B120KD
Abstract: TF010
Text: PD - 94385F IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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94385F
IRGB5B120KD
O-220
O-220AB
O-220AB
IRGB5B120KD
TF010
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PDF
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