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    IRGS6B60KD Search Results

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    IRGS6B60KD Price and Stock

    Infineon Technologies AG IRGS6B60KDPBF

    IGBT 600V 13A 90W D2PAK
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    DigiKey IRGS6B60KDPBF Tube
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    Avnet Americas IRGS6B60KDPBF Tube 4 Weeks 232
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    • 10000 $1.4364
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    RS IRGS6B60KDPBF Bulk 4
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    • 100 $2.38
    • 1000 $2.13
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    Infineon Technologies AG IRGS6B60KDTRRP

    IGBT NPT 600V 13A D2PAK
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    DigiKey IRGS6B60KDTRRP Reel
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    Infineon Technologies AG IRGS6B60KDTRLP

    IGBT 600V 13A 90W D2PAK
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    DigiKey IRGS6B60KDTRLP Reel
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    IRGS6B60KDTRLP Digi-Reel 1
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    IRGS6B60KDTRLP Cut Tape
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    Avnet Americas IRGS6B60KDTRLP Reel 4 Weeks 268
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    TME IRGS6B60KDTRLP 800
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    Rochester Electronics LLC IRGS6B60KDTRLP

    IGBT 11A, 600V, N CHANNEL
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    DigiKey IRGS6B60KDTRLP Bulk 222
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    International Rectifier IRGS6B60KDTRLP

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    Bristol Electronics IRGS6B60KDTRLP 1,131
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    IRGS6B60KDTRLP 686 3
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    Quest Components IRGS6B60KDTRLP 904
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    IRGS6B60KDTRLP 548
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    Rochester Electronics IRGS6B60KDTRLP 728 1
    • 1 $1.37
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    ComSIT USA IRGS6B60KDTRLP 800
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    IRGS6B60KD Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRGS6B60KD International Rectifier 600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package Original PDF
    IRGS6B60KD International Rectifier 600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package Original PDF
    IRGS6B60KD International Rectifier 600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package; A IRGS6B60KD with Standard Packaging Original PDF
    IRGS6B60KD International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRGS6B60KD International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRGS6B60KDPBF International Rectifier Original PDF
    IRGS6B60KDPBF International Rectifier 600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package; Similar to IRGS6B60KD with Lead Free Packaging Original PDF
    IRGS6B60KDTRLP International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 13A 90W D2PAK Original PDF
    IRGS6B60KDTRRP International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 13A 90W D2PAK Original PDF

    IRGS6B60KD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A12Q

    Abstract: No abstract text available
    Text: PD - 94381 IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF IRGS6B60KD IRGSL6B60KD IRGS6B60KD O-262 IRGSL6B60KD A12Q

    A12Q

    Abstract: No abstract text available
    Text: PD - 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.


    Original     		PDF 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF O-220AB O-262 A12Q

    Untitled

    Abstract: No abstract text available
    Text: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD O-220AB O-262 AN-994.

    IRGB6B60KDPBF

    Abstract: AN-994 C-150 IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD IRF53
    Text: PD - 95229A IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.


    Original     		PDF 5229A IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF O-220AB IRGB6B60KD O-262 IRGS6B60KD IRGSL6B60KD AN-994. IRGB6B60KDPBF AN-994 C-150 IRF530S IRGB6B60KD IRGSL6B60KD IRF53

    AN-994

    Abstract: C-150 IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD
    Text: PD - 95229A IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.


    Original     		PDF 5229A IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF O-220AB IRGB6B60KD O-262 IRGS6B60KD IRGSL6B60KD AN-994. AN-994 C-150 IRF530S IRGB6B60KD IRGSL6B60KD

    C-150

    Abstract: IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD transistor* igbt 70A 300 V
    Text: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD O-220AB O-262 AN-994. C-150 IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD transistor* igbt 70A 300 V

    Untitled

    Abstract: No abstract text available
    Text: PD - 95229C IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.


    Original     		PDF 95229C IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF O-220AB O-262

    IRF 1640 G

    Abstract: IRF 1630 47W surface mount transistor IRF 1640 NAT 3 transistor
    Text: PD - 95229 IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.


    Original     		PDF IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF O-220AB O-220 AN-994. IRF 1640 G IRF 1630 47W surface mount transistor IRF 1640 NAT 3 transistor

    Untitled

    Abstract: No abstract text available
    Text: PD - 94381C IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF 94381C IRGB6B60KD IRGS6B60KD IRGSL6B60KD O-220AB O-262 O-220AB

    C-150

    Abstract: IRF1010 IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD IRL3103L
    Text: PD - 94381D IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF 94381D IRGB6B60KD IRGS6B60KD IRGSL6B60KD O-220AB O-262 O-220AB C-150 IRF1010 IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD IRL3103L

    Untitled

    Abstract: No abstract text available
    Text: PD - 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.


    Original     		PDF 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF O-220AB O-262 IRGB6B60KDPbF IRGS6B60KDPbF O-220AB

    IRF530S

    Abstract: IRGB6B60KD IRGS6B60KD IRGSL6B60KD C-150
    Text: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD O-220AB O-262 AN-994. IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD C-150

    Untitled

    Abstract: No abstract text available
    Text: PD - 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.


    Original     		PDF 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF O-220AB O-262

    AN-994

    Abstract: C-150 IRF530S IRGS6B60KD IRGSL6B60KD
    Text: PD - 95229 IRGB6B60KDPbF IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF IRGB6B60KDPbF IRGS6B60KD IRGSL6B60KD O-220 O-220AB O-262 IRGB6B60KDPbF IRGS6B60KD AN-994. AN-994 C-150 IRF530S IRGSL6B60KD

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter