smd schottky diode A2 SOD-123
Abstract: CAP 10u 10 25V X7R 1206 smd diode A2 smd schottky diode 82 smd resistance R39 smd 805 SMD1808-A1 J31 sod-123 1uF 250V 10 X7R SMD electrolytic suppressor diode smd
Text: DP83848 AspenPhy Demo II - Cover Revised: Wednesday, August 11, 2005 870012505-100 Revision: A2 Bill Of Materials Page1 Item 1 2 3 4 5 6 7 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 49
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DP83848
CRCW0805
CRCW2010
smd schottky diode A2 SOD-123
CAP 10u 10 25V X7R 1206
smd diode A2
smd schottky diode 82
smd resistance R39
smd 805
SMD1808-A1
J31 sod-123
1uF 250V 10 X7R SMD electrolytic
suppressor diode smd
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22B4 diode ZENER
Abstract: smk 1350 transistor 88E1111 BCC package SIL1162 LS650 C3333 P33A zener DIODE 5c2 39C6 2N7002DW
Text: 8 6 7 2 3 4 5 1 CK APPD DRAWING 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN DATE 02 D PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
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MPC7447A
400PIN
LMC7211
NC7S32
MAX4172
TPS2211
FAN2558
MAX1772
MAX1717
22B4 diode ZENER
smk 1350 transistor
88E1111 BCC package
SIL1162
LS650
C3333
P33A
zener DIODE 5c2
39C6
2N7002DW
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diode SM 88A
Abstract: FDPF035N06B_F152
Text: FDPF035N06B_F152 N-Channel PowerTrench MOSFET 60 V, 88 A, 3.5 mΩ Features Description • RDS on = 2.91 mΩ ( Typ.) @ VGS = 10 V, ID = 88 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining
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ZH510
Abstract: XW604 L9120 M5607 L9140 C4722 L9300 PP9010 ZH610 74LVC1G04DBVG4
Text: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS
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Q8303
Abstract: JD smd diodes C4722 C5807 C8450 p66 apple XTAL 25mhz 50ppm SMC H8S2116 U6700 Socket AM2
Text: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS
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SOT23-5 AE31
Abstract: c9450 ar9350 ZH510 M5621 C4722 FERR-120-OHM-1 6A4 mic DIODE D6905 C8450
Text: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS
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YW 431
Abstract: AN-994 IRFBC40A IRFBC40AS
Text: PD- 91897A SMPS MOSFET IRFBC40AS HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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1897A
IRFBC40AS
YW 431
AN-994
IRFBC40A
IRFBC40AS
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AN-994
Abstract: IRFBC40A IRFBC40AS
Text: PD- 91897A SMPS MOSFET IRFBC40AS HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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1897A
IRFBC40AS
AN-994
IRFBC40A
IRFBC40AS
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diode SM 88A
Abstract: No abstract text available
Text: PD- 91897 SMPS MOSFET IRFBC40AS HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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IRFBC40AS
diode SM 88A
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Untitled
Abstract: No abstract text available
Text: FDPF035N06B N-Channel PowerTrench MOSFET 60 V, 88 A, 3.5 mΩ Features Description • RDS on = 2.91 mΩ ( Typ.) @ VGS = 10 V, ID = 88 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining
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FDPF035N06B
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Untitled
Abstract: No abstract text available
Text: FDPF035N06B N-Channel PowerTrench MOSFET 60 V, 88 A, 3.5 mΩ Features Description • RDS on = 2.91 mΩ ( Typ.) @ VGS = 10 V, ID = 88 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining
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FDPF035N06B
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74AHC1G04
Abstract: 74AHCT1G04 INA 04 74AHC1G04GW 74AHCT1G04GW 74AHC1G04GW AC Philips LQFP PART MARKING CODE 74ahc1g
Text: P hilips S em ico n d uctors P relim inary sp ecification Inverter 74A H C 1G 04; 74A H C T 1G 04 FEA TUR ES Q U IC K R E F E R E N C E DATA • S ym m etrical output im pedance GN D = 0 V; Tamb = 25 °C; tr = tf < 3.0 ns. T Y P IC A L • High noise im m unity
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74AHC1G04;
74AHCT1G04
EIA/JESD22-A114-A
EIA/JESD22-A115-A
74AHC1G/AHCT1G04
74AHC1G04
74AHCT1G04
INA 04
74AHC1G04GW
74AHCT1G04GW
74AHC1G04GW AC
Philips LQFP PART MARKING CODE
74ahc1g
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sc-88a si
Abstract: 74AHC1G08 74AHC1G08GW 74AHCT1G08 74AHCT1G08GW sot353 marking AE
Text: P hilips S em ico n d uctors P relim inary sp ecification 2-in pu t A N D gate 74A H C 1G 08; 74A H C T 1G 08 FEA TUR ES Q U IC K R E F E R E N C E DATA • S ym m etrical output im pedance GN D = 0 V; Tamb = 25 °C; tr = tf < 3.0 ns. T Y P IC A L • High noise im m unity
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74AHC1G08;
74AHCT1G08
EIA/JESD22-A114-A
EIA/JESD22-A115-A
74AHC1G/AHCT1G08
sc-88a si
74AHC1G08
74AHC1G08GW
74AHCT1G08
74AHCT1G08GW
sot353 marking AE
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74AHC1G02
Abstract: 74AHC1G02GW 74AHCT1G02 74AHCT1G02GW
Text: P hilips S em ico n d uctors P relim inary sp ecification 2-in pu t NO R gate 74A H C 1G 02; 74A H C T 1G 02 FEA TUR ES Q U IC K R E F E R E N C E DATA • S ym m etrical output im pedance GN D = 0 V; Tamb = 25 °C; tr = tf < 3.0 ns. T Y P IC A L • High noise im m unity
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74AHC1G02;
74AHCT1G02
EIA/JESD22-A114-A
EIA/JESD22-A115-A
74AHC1G/AHCT1G02
74AHC1G02
74AHC1G02GW
74AHCT1G02
74AHCT1G02GW
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74AHC1G32
Abstract: 74AHC1G32GW 74AHCT1G32 74AHCT1G32GW
Text: P hilips S em ico n d uctors P relim inary sp ecification 2-in pu t O R gate 74A H C 1G 32; 74A H C T 1G 32 FEATURES Q U IC K R E F E R E N C E DATA • S ym m etrical output im pedance GN D = 0 V; Tamb = 25 °C; tr = tf < 3.0 ns. T Y P IC A L • High noise im m unity
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74AHC1G32;
74AHCT1G32
EIA/JESD22-A114-A
EIA/JESD22-A115-A
74AHC1G/AHCT1G32
74AHC1G32
74AHC1G32GW
74AHCT1G32
74AHCT1G32GW
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74AHC1G125
Abstract: 74AHC1G125GW 74AHCT1G125 AM SOT353 74AHC1G125 PHILIPS MARKING AF SOT353
Text: P hilips S em ico n d uctors P relim inary sp ecification Bus buffer/line driver; 3-state 74AHC1G125; 74AHCT1G125 FEA TUR ES Q U IC K R E F E R E N C E DATA • S ym m etrical output im pedance GN D = 0 V; Tamb = 25 °C; tr = tf < 3.0 ns. T Y P IC A L • High noise im m unity
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74AHC1G125;
74AHCT1G125
EIA/JESD22-A114-A
EIA/JESD22-A115-A
74AHC1G/AHCT1G125
74AHC1G125
74AHC1G125GW
74AHCT1G125
AM SOT353
74AHC1G125 PHILIPS
MARKING AF SOT353
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IRF250SM
Abstract: No abstract text available
Text: im if Pi im SEME IRF250SM LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 2.0 3.5 3.5 200V V DSS 0.25 14A I D(cont) 3.0 0.100Û ^D S (on) FEATURES TT • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF
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IRF250SM
O-220SM
00A/ns
300ms,
IRF250SM
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lg diode 88A
Abstract: IRF240SM
Text: im iF F i mi SEME IRF240SM LAB MECHANICAL DATA Dimensions in mm inches 11.5 («— ► 3.5 1 t ' k 1 r !1 2.0 N-CHANNEL POWER MOSFET -►i — 3.5 4 ¥ 200V V Dss 0.25 13.9A ^D(cont) 3.0 0 .1 8 0 0 ^DS(on) FEATURES 3 • HERMETICALLY SEALED SURFACE MOUNT PACKAGE
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IRF240SM
TQ-220SM
300ms,
lg diode 88A
IRF240SM
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Untitled
Abstract: No abstract text available
Text: im s ffs n il IRFN140 SEME LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11 s 100 V V Dss 0.25 13.9A ^D(cont) 3.0 r*-H 0 .077G R DS(on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE.
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IRFN140
O-220SM
300ms,
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Untitled
Abstract: No abstract text available
Text: im i ^ i mi IRF140SM SEME LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 100V 13.9A 0.07712 V DSS 0.25 I D(cont) 3.0 ^DS(on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE.
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IRF140SM
T0-220SM
300ms,
S1331S7
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Untitled
Abstract: No abstract text available
Text: ADE-208-046D Z HSM88AS Silicon Schottky Barrier Diode for Balanced Mixer HITACHI Features Rev. 4 Jul. 1994 Pin Arrangement • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. 4 TJz P Ordering Information
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HSM88AS
ADE-208-046D
400nA
HSM88AS
SC-59A
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Untitled
Abstract: No abstract text available
Text: 3 7E SEMELAB LTD 0133107 D QQQQSm Q E G3 1 1987 SEMELAB • x fc BUZ 20 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm u _ 10.3 iu . J wi 13~*1 —* max. .I m 0X- -*]3.6K+|3.6|* m 4.5ma« 5.9 min. , i 15.8 max. L.}.,- APPLICATIONS • DC/DC CONVERTERS
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flp/ds-100
T-39-
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Untitled
Abstract: No abstract text available
Text: I ADE-208-047C Z HSM88ASR Silicon Schottky Barrier Diode for Balanced Mixer HITACHI Features Rev. 3 Jul. 1994 Pin Arrangement • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. 4P Ordering Information
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HSM88ASR
ADE-208-047C
88ASR
HSM88ASR
SC-59A
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PA 0016 PIONEER
Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete
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J-23548
K28742
PA 0016 PIONEER
Pioneer PA 0016
transistors br 6822
MPF104
I9951D
Johnson motor 2 607 022 013
2SK109 equivalent
V01000J
DG5043CK
IRF4431
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