diode SM 78A
Abstract: SM 78A SM+78A
Text: PD - 95403 IRL1004PbF Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 40V
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IRL1004PbF
O-293
O-220AB.
O-220AB
diode SM 78A
SM 78A
SM+78A
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22B4 diode ZENER
Abstract: smk 1350 transistor 88E1111 BCC package SIL1162 LS650 C3333 P33A zener DIODE 5c2 39C6 2N7002DW
Text: 8 6 7 2 3 4 5 1 CK APPD DRAWING 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN DATE 02 D PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
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MPC7447A
400PIN
LMC7211
NC7S32
MAX4172
TPS2211
FAN2558
MAX1772
MAX1717
22B4 diode ZENER
smk 1350 transistor
88E1111 BCC package
SIL1162
LS650
C3333
P33A
zener DIODE 5c2
39C6
2N7002DW
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Untitled
Abstract: No abstract text available
Text: PD - 95403 IRL1004PbF Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 40V
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IRL1004PbF
O-220AB
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diode SM 78A
Abstract: No abstract text available
Text: PD - 95403 IRL1004PbF Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 40V
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Original
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IRL1004PbF
O-220AB
diode SM 78A
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 95403 IRL1004PbF Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 40V
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Original
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IRL1004PbF
O-220AB.
O-220AB
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PDF
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IRL1004
Abstract: diode LE 78A
Text: PD - 91702B IRL1004 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D l VDSS = 40V RDS on = 0.0065Ω
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91702B
IRL1004
O-220
IRL1004
diode LE 78A
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IRL1004
Abstract: DSA0031588
Text: PD - 91702B IRL1004 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D l VDSS = 40V RDS on = 0.0065Ω
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91702B
IRL1004
O-220
univ1883
IRL1004
DSA0031588
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r4363
Abstract: L9141 NTC 16D-7 MXM pinout C4253 PP2102 d7810 imac MLB ntc 10d-7 PP1013
Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M72-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 34 503014 ENGINEERING RELEASED
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M72-DVT
03/0m72
r4363
L9141
NTC 16D-7
MXM pinout
C4253
PP2102
d7810
imac MLB
ntc 10d-7
PP1013
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PDF
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d7810
Abstract: L9141 MXM pinout U4900 J9002 K40 fet MARK G4 SOT363 Apple j9002 k50 apple ISL6269
Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M78-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 33 503047 ENGINEERING RELEASED
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M78-DVT
d7810
L9141
MXM pinout
U4900
J9002
K40 fet
MARK G4 SOT363
Apple j9002
k50 apple
ISL6269
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PDF
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c6073
Abstract: C6074 C6091 C6089 1CA033 ar9103 SIL1178 NEC C3568 c6092 U2390
Text: 6 7 REV STD D CSA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM
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RP6152
RP6158
RP6159
RP6707
RP6708
RP6709
RP6710
RP6720
RP6721
RP6722
c6073
C6074
C6091
C6089
1CA033
ar9103
SIL1178
NEC C3568
c6092
U2390
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PDF
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SMLG170CA
Abstract: SMLJ11A SMLJ100A SMLJ90A SMLJ17A SMLJ26A SMLJ170A SMLJ6.0A SMLJ12A SMLJ14A
Text: Microsemi Corp. The diode experts SANTA A N A , CA SC O T T SD A L E , A Z For more information call: 602 941-6300 SM L SERIES 5 .0 thru 1 7 0 .0 Volts 3 0 0 0 WATTS FEA TU RES UNIDIRECTIONAL AND BIDIRECTIONAL SURFACE MOUNT • UN ID IRECTIONAL AND BIDIRECTIONAL
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DO-214AB
DO-215AB
SMLG170CA
SMLJ11A
SMLJ100A
SMLJ90A
SMLJ17A
SMLJ26A
SMLJ170A
SMLJ6.0A
SMLJ12A
SMLJ14A
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diode SM 78A
Abstract: AR-761 anawriter
Text: O K I Semiconductor MSM6378A/MSM6379 OTP BUILT-IN VOICE SYNTHESIS LSI GENERAL DESCRIPTION The M SM6378A/MSM6379 is an ADPCM voice synthesis LSI w ith a built-in one-tim e PROM OTP . The MSM6378A/MSM6379 reproduces the speech data, w hich the user h as a n a ly z e d a n d r e c o rd e d u s in g th e
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MSM6378A/MSM6379
SM6378A/MSM6379
MSM6378A/MSM6379
512Kbit
500Kbits
MSM6378A:
256Kbit
244bits
12bit
diode SM 78A
AR-761
anawriter
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PDF
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t 317 transistor
Abstract: bjc 2100 diode um 42A smd diode sm 3c kd smd transistor IOR 451
Text: PD - 91729 International IÖR Rectifier IRG4ZH71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High sh o rt circu it rating op tim ized fo r m otor control, tsc = 1 0|js, V c c = 7 2 0 V , T j = 125°C,
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IRG4ZH71KD
t 317 transistor
bjc 2100
diode um 42A
smd diode sm 3c
kd smd transistor
IOR 451
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PDF
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BPW 64 photo
Abstract: BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na
Text: VISHAY Vishay Telefunken Selector Guide Detectors Photo Transistors C haracteristics Dim. Package Fig- Type Photo Sensitive Area / mm 2 lca / m A @ Ee /m W /c m 2 + /- q¡ V c e = 5 V, X = 950 nm 1 tr / (j.s @ (lc = 5 mA, X = RL /k Q 950 nm) Photo Transistors in Clear Plastic Package
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BPW16N
BPW17N
BPW85C
BPW96C
BPV11
BPV23FL
TESS5400
900nm)
BPW 64 photo
BPW 64 photo diode
77NB
D5100
77nA
BPW 56 photo
bpx43-5 smd
BPW 64
BPW 61
bpw 77na
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9a2 diode
Abstract: JC86
Text: SIEMENS SIPMOS Power MOS Transistor VDS lD = 600 V = 7.8 A ^ D S o n = 0 -9 BUZ 94 O • N channel • E nhancem ent mode • A valanche-proof • Package: TO -204 AA (T O -3 )') Type Ordering code BUZ 94 C 670 78-A 101 9-A2 Parameter Symbol Values Unit
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SD 347
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power MOS Transistors BUZ 15 BUZ 347 = 50 V ^DS = 45 A b 0.03 Q ^DS on • N channel • E nhancem ent mode • A valanche-proof • Packages: T O -2 04 A E (TO-3), TO -2 18 A A (T O P -3)’ ) Type Ordering code BUZ 15 C 6 70 78-A 100 1 -A2
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LG TV flyback transformer
Abstract: ferrinox ferrite thomson lcc IC-7220 BU508 AG BUS08 CORE CATALOG Self-Oscillating Flyback BU508 darlington BU508 SEC
Text: A N E402 130W Ringing Choke Power Supply using TDA4601 Prepared by Francois Lhermite Ind. Appli.Engineering This application note describes a multiple output twitchmode power-supply delivering a total output power of 130 Watts. The architecture is based on the fly-back mode working in
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TDA4601
TDA4601.
TDA4601
80-Watt
AN752
LG TV flyback transformer
ferrinox
ferrite thomson lcc
IC-7220
BU508 AG
BUS08
CORE CATALOG
Self-Oscillating Flyback
BU508 darlington
BU508 SEC
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 91729 International I R Rectifier IRG4ZH71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10 as, VCc = 7 2 0 V , T j = 125°C,
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IRG4ZH71KD
SMD-10
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PDF
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DS 3107
Abstract: BUZ84 DIODE BUZ
Text: SIEMENS SIPMOS Power MOS Transistors BUZ 84 BUZ 84 A BUZ 355 BUZ 356 VDS = 800 V lD = 5 . 0 . . . 6.0 A ^DS on = 1-5 2.0 Q • N channel • E nhancem ent mode • Packages TO -204A A , (TO-3), T O -218A A (T O P -3 )') Type Ordering code BUZ 84 C 6 70 78-A 101 3-A2
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-204A
-218A
7078-A
107-A
108-A
DS 3107
BUZ84
DIODE BUZ
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PDF
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DIODE marking 7BA
Abstract: sg 7ba silent relay H3 marking CSA22 diode marking code H5 relay low profile
Text: cP r ilT C T I THE p o s s i b i l i t i e s « he i nfi ni te JSILENT POWER RELAY 1 POLE—10 A LOW PROFILE TYPE IFTR-H3 SERIES • FEATURES • Pin co m p a tib le w ith w id e ly used V S and FTR -H1 series p o w e r relays • U ltra sile n t relay w ith pa tented un iq ue U -sh ap e spring. N oise
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250VAC,
UL508,
DIODE marking 7BA
sg 7ba
silent relay
H3 marking
CSA22
diode marking code H5
relay low profile
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PDF
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transistor tic 2250
Abstract: 4010R BUZ64-T
Text: SIEMENS SIPMOS Power MOS Transistor BUZ 64 VDS lD = 400 V = 1 1 .5 A ^ D S o n = 0.40 Q • N channel • E nhancem ent mode • A valanche-proof • Package: T O -2 04 A A (T O -3 )') Type Ordering code BUZ 64 C 6 70 78-A 10 1 7-A2 Maximum Ratings Parameter
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PDF
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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Untitled
Abstract: No abstract text available
Text: Transient voltage suppressor diodes. The plastic material carries U/L recognition 94V-0. SA 5.0/STUS0 S eri». 500W. Case: D041/SM A Outline: 2/7 Breakdown Voltage @ It Note 1 TY PE Unidirectional Axial Lead SAS.O SA S.OA SA 6.0 SA 6.0A SA 6.5 SA 6.5A
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D041/SM
SA36A
STUS06H
STUS56H
STUS07A
STUS57A
STUS07G
STUS57G
STUS08C
STUS58C
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PDF
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KL SN 102 94v-0
Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
Text: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results
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