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    DIODE SJ 44 Search Results

    DIODE SJ 44 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SJ 44 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N4475

    Abstract: 1N4465 1N4469 1N4474 1N4464 Zener diode zener diode 1N4464 1N4478 1N4477 1N4471 1N4479
    Text: SENSITRON SEMICONDUCTOR 1N4464 thru 1N4494 1N4464US thru 1N4494US TECHNICAL DATA DATA SHEET 5080, Rev SJ SX SV Zener 1.5W DIODE • Ultra-low reverse leakage current • Zener voltage available from 36V to 160V • Sharp Zener knee • Metallurgically bonded


    Original     		PDF 1N4464 1N4494 1N4464US 1N4494US 1N4475 1N4465 1N4469 1N4474 1N4464 Zener diode zener diode 1N4464 1N4478 1N4477 1N4471 1N4479

    d 5072 transistor

    Abstract: d 5072 1N6171AUS
    Text: SENSITRON SEMICONDUCTOR 1N6138A/US thru 1N6173A/US TECHNICAL DATA DATA SHEET 5072, REV. – SJ SX SV Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C


    Original     		PDF 1N6138A/US 1N6173A/US 1N6138A/US 1N6139A/US 1N6140A/US 1N6141A/US 1N6142A/US 1N6143A/US 1N6144A/US 1N6145A/US d 5072 transistor d 5072 1N6171AUS

    C 5074 transistor

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR 1N6102A/US thru 1N6137A/US TECHNICAL DATA DATA SHEET 5074, REV. – SJ SX SV Transient Voltage Suppressor Diode, 500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C


    Original     		PDF 1N6102A/US 1N6137A/US 1N6102A/US 1N6103A/US 1N6104A/US 1N6105A/US 1N6106A/US 1N6107A/US 1N6108A/US 1N6109A/US C 5074 transistor

    1N4465

    Abstract: 1N4475 1N4474 1N4464 1N4464US 1N4494 1N4494US SN63 zener diode 1N4464 1N4477
    Text: SENSITRON SEMICONDUCTOR 1N4464 thru 1N4494 1N4464US thru 1N4494US TECHNICAL DATA DATA SHEET 5080, Rev A SJ/ SX /SV SS Zener 1.5W DIODE • • • • • • Ultra-low reverse leakage current Zener voltage available from 9.1V to 160V Sharp Zener knee Metallurgically bonded


    Original     		PDF 1N4464 1N4494 1N4464US 1N4494US 1N4464/US 1N4465/US 1N4466/US 1N4467/US 1N4468/US 1N4469/US 1N4465 1N4475 1N4474 1N4494 1N4494US SN63 zener diode 1N4464 1N4477

    1N5629a

    Abstract: 1N5645A series 1N5555 1N566 1N5645A 1N5558 1N5630A 1N5631A 1N5632A 1N5633A
    Text: SENSITRON SEMICONDUCTOR 1N5555 to 1N5558 1N5907 1N5629A to 1N5665A TECHNICAL DATA DATA SHEET 5164, REV. A SJ SX SV SS Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C


    Original     		PDF 1N5555 1N5558 1N5907 1N5629A 1N5665A 1N5629A 1N5630A 1N5645A series 1N566 1N5645A 1N5558 1N5630A 1N5631A 1N5632A 1N5633A

    RJL60S5DPP-E0

    Abstract: RJL60S5 R07DS0819EJ0100
    Text: Preliminary Datasheet RJL60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0819EJ0100 Rev.1.00 Feb 04, 2013 Features • Superjunction MOSFET  Built-in fast recovery diode trr = 170 ns typ. at IF = 20 A, VGS = 0, diF/dt = 100 A/s, Ta = 25C


    Original     		PDF RJL60S5DPP-E0 R07DS0819EJ0100 PRSS0003AG-A O-220FP) RJL60S5DPP-E0 RJL60S5

    RJL60S5

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJL60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0817EJ0001 Rev.0.01 Jun 21, 2012 Features • Superjunction MOSFET  Built-in fast recovery diode  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)


    Original     		PDF RJL60S5DPE R07DS0817EJ0001 PRSS0004AE-B RJL60S5

    RJL60S5

    Abstract: RJL60S5DPE
    Text: Preliminary Datasheet RJL60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0817EJ0001 Rev.0.01 Jun 21, 2012 Features • Superjunction MOSFET  Built-in fast recovery diode  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)


    Original     		PDF RJL60S5DPE R07DS0817EJ0001 PRSS0004AE-B RJL60S5 RJL60S5DPE

    RJL60S5

    Abstract: PRSS0004ZH-A fet 600V 20A RJL60S5DPK-M0
    Text: Preliminary Datasheet RJL60S5DPK-M0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0818EJ0002 Rev.0.02 Jun 21, 2012 Features • Superjunction MOSFET  Built-in fast recovery diode  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)


    Original     		PDF RJL60S5DPK-M0 R07DS0818EJ0002 PRSS0004ZH-A RJL60S5 PRSS0004ZH-A fet 600V 20A RJL60S5DPK-M0

    RJL60S5

    Abstract: R07DS0819EJ0001
    Text: Preliminary Datasheet RJL60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0819EJ0001 Rev.0.01 Jun 21, 2012 Features • Superjunction MOSFET  Built-in fast recovery diode  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)


    Original     		PDF RJL60S5DPP-E0 R07DS0819EJ0001 PRSS0003AG-A O-220FP) RJL60S5

    RJL60S5

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJL60S5DPK-M0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0818EJ0002 Rev.0.02 Jun 21, 2012 Features • Superjunction MOSFET  Built-in fast recovery diode  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)


    Original     		PDF RJL60S5DPK-M0 R07DS0818EJ0002 PRSS0004ZH-A RJL60S5

    Untitled

    Abstract: No abstract text available
    Text: 1N6108A thru 1N6136A Standard 500W Bi-directional TVS SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5074, REV. C AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT * SJ*, SX*, SV*, SS* Bi-directional Transient Voltage Suppressor Diode, 500W


    Original     		PDF 1N6108A 1N6136A MIL-PRF-19500/516 1N6108A/US 1N6109A/UStasheet

    1n4109-1

    Abstract: zener diode 10 sv
    Text: 1N4100-1/UR-1 to 1N4135-1/UR-1 SENSITRON SEMICONDUCTOR SJ SV SX SS TECHNICAL DATA DATASHEET 5095, Rev A.1 Zener 1.5W DIODE • Zener voltage available from 12V to 100V • Sharp Zener knee • Metallurgically bonded Type Number 1N4100-1/UR ‐1


    Original     		PDF 1N4100-1/UR-1 1N4135-1/UR-1 1N41001/UR 1N41011/UR 1N41021/UR 1N41031/UR 1N41041/UR 1N41051/UR 1N41061/UR 1N41071/UR 1n4109-1 zener diode 10 sv

    IPA50R500CE

    Abstract: DIODE V10-20 mosfet equivalent IPA50R280CE LLC resonant smps resonant llc full bridge 400W pwm smps schematic SWITCHING bjt 500v IPA50R280C
    Text: Application Note AN 2012-04 V1.0 April 2012 500V CoolMOSTM CE 500V Superjunction MOSFET for Consumer and Lighting Applications IFAT PMM APS SE SL René Mente Francesco Di Domenico 500V CoolMOSTM CE Application Note AN 2012-04 V1.0 April 2012 Edition 2011-02-02


    Original     		PDF ED-29, IPA50R500CE DIODE V10-20 mosfet equivalent IPA50R280CE LLC resonant smps resonant llc full bridge 400W pwm smps schematic SWITCHING bjt 500v IPA50R280C

    diode sj

    Abstract: 2SK3930-01L
    Text: 2SK3930-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators


    Original     		PDF 2SK3930-01L diode sj

    Diode SJ 12

    Abstract: 2SK3930-01L Diode SJ
    Text: 2SK3930-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators


    Original     		PDF 2SK3930-01L Diode SJ 12 Diode SJ

    Diode SJ 44

    Abstract: No abstract text available
    Text: SKNa 20 Stud Diode Avalanche Diode SKNa 20 Features # $%&'& *+ ,-.+ /+%+/0+ # # # )*&/&),+/10,1) 2. ,3 4566 7+/8+,1) 8+,&' )&0+ 91,* :'&00 1(02'&,3/ $(3;+ 01;+ ,*/+&;+; 0,2; <=> ? @33'1(: %1& 8+,&' .'&,+0 3/ *+&, 01(A0 =BCD $(3;+ ,3 0,2; MGNOK81( <LO?= Q R6 $


    Original     		PDF MGNOK81( S1828 64X4D Diode SJ 44

    IC 4558 surround sound circuit

    Abstract: ILX554 ICX285AL LCX029amt sony led tv electronic diagram LCX017CLT surround circuit using ic 4558 pin diagram composite to GVIF ILX551A GVIF
    Text: FIRST HALF 2 0 0 1 semiconductor product guide Table of Contents CAVD Multimedia Products . . . . . . . . . . . . . . . . . . . . . . . . 2 CCDs Area Sensor — Color . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Area Sensor— Black & White. . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF SBD-PG010101 IC 4558 surround sound circuit ILX554 ICX285AL LCX029amt sony led tv electronic diagram LCX017CLT surround circuit using ic 4558 pin diagram composite to GVIF ILX551A GVIF

    RF2 2A 250V

    Abstract: No abstract text available
    Text: RF2 2-pole Force Guided Relay / SJ Series Socket For simple and easy safety measures - reduce costs and installation space. • 2-pole force guided relay to reduce cost and installation space. • Force guided contact mechanism EN50205 Type A TÜV approved .


    Original     		PDF EN50205 UL60947-4-1A E55996 LR35144 EN50/ EP1471-0 RF2 2A 250V

    Untitled

    Abstract: No abstract text available
    Text: 2SK3930-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators


    Original     		PDF 2SK3930-01L Stora10

    led 5050 rgb datasheet

    Abstract: 5050 rgb led GVIF cable ILX511 sony exview camera IC 4558 surround sound circuit CCD LINEAR SENSOR 512 IC PROCESSOR VCT1 ICX205 ccd sony ilx511
    Text: F I R S T Q U A R T E R 2 0 0 0 semiconductor product guide Table of Contents CCDs Area Sensor — Color . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Area Sensor— Black & White. . . . . . . . . . . . . . . . . . . . . 3 Area Sensor — Progressive Scan . . . . . . . . . . . . . . . . . . 4


    Original     		PDF

    Sj 47 diode

    Abstract: power supply 100v 30a schematic
    Text: 2SK3646-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply)


    Original     		PDF 2SK3646-01L Sj 47 diode power supply 100v 30a schematic

    SPF12

    Abstract: No abstract text available
    Text: 2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators


    Original     		PDF 2SK3774-01L SPF12

    diode 1n4637

    Abstract: in4632 zener diode in4560 1N41 IN4620 IN4550 IN4624 1n41113 1N4611A IN4619
    Text: H H M M M H Z Z Z z z z A * A A A A 2 2 2 2 2 2 M H O M M M z z z A A A 0t W W CO SO 00 sj M H M z z z A A A 0> Ot Ot WWW 9 m A M M M z z z A A A 9 0 lO > CO CO Co W N h MMH* z z z A A A Oi 0 ) 01 co ro ro O lO 00 M z A 01 N) sj M z A 01 N) 01 M M M Z Z Z


    OCR Scan     		PDF 1N4549 1N4550 1N4551 1N4552 1N4553 1N4554 1N4555 1N4556 1N4557 1N4558 diode 1n4637 in4632 zener diode in4560 1N41 IN4620 IN4550 IN4624 1n41113 1N4611A IN4619