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    DIODE SJ 27 Search Results

    DIODE SJ 27 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SJ 27 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N4475

    Abstract: 1N4465 1N4469 1N4474 1N4464 Zener diode zener diode 1N4464 1N4478 1N4477 1N4471 1N4479
    Text: SENSITRON SEMICONDUCTOR 1N4464 thru 1N4494 1N4464US thru 1N4494US TECHNICAL DATA DATA SHEET 5080, Rev SJ SX SV Zener 1.5W DIODE • Ultra-low reverse leakage current • Zener voltage available from 36V to 160V • Sharp Zener knee • Metallurgically bonded


    Original     		PDF 1N4464 1N4494 1N4464US 1N4494US 1N4475 1N4465 1N4469 1N4474 1N4464 Zener diode zener diode 1N4464 1N4478 1N4477 1N4471 1N4479

    d 5072 transistor

    Abstract: d 5072 1N6171AUS
    Text: SENSITRON SEMICONDUCTOR 1N6138A/US thru 1N6173A/US TECHNICAL DATA DATA SHEET 5072, REV. – SJ SX SV Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C


    Original     		PDF 1N6138A/US 1N6173A/US 1N6138A/US 1N6139A/US 1N6140A/US 1N6141A/US 1N6142A/US 1N6143A/US 1N6144A/US 1N6145A/US d 5072 transistor d 5072 1N6171AUS

    C 5074 transistor

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR 1N6102A/US thru 1N6137A/US TECHNICAL DATA DATA SHEET 5074, REV. – SJ SX SV Transient Voltage Suppressor Diode, 500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C


    Original     		PDF 1N6102A/US 1N6137A/US 1N6102A/US 1N6103A/US 1N6104A/US 1N6105A/US 1N6106A/US 1N6107A/US 1N6108A/US 1N6109A/US C 5074 transistor

    1N4465

    Abstract: 1N4475 1N4474 1N4464 1N4464US 1N4494 1N4494US SN63 zener diode 1N4464 1N4477
    Text: SENSITRON SEMICONDUCTOR 1N4464 thru 1N4494 1N4464US thru 1N4494US TECHNICAL DATA DATA SHEET 5080, Rev A SJ/ SX /SV SS Zener 1.5W DIODE • • • • • • Ultra-low reverse leakage current Zener voltage available from 9.1V to 160V Sharp Zener knee Metallurgically bonded


    Original     		PDF 1N4464 1N4494 1N4464US 1N4494US 1N4464/US 1N4465/US 1N4466/US 1N4467/US 1N4468/US 1N4469/US 1N4465 1N4475 1N4474 1N4494 1N4494US SN63 zener diode 1N4464 1N4477

    1N5629a

    Abstract: 1N5645A series 1N5555 1N566 1N5645A 1N5558 1N5630A 1N5631A 1N5632A 1N5633A
    Text: SENSITRON SEMICONDUCTOR 1N5555 to 1N5558 1N5907 1N5629A to 1N5665A TECHNICAL DATA DATA SHEET 5164, REV. A SJ SX SV SS Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C


    Original     		PDF 1N5555 1N5558 1N5907 1N5629A 1N5665A 1N5629A 1N5630A 1N5645A series 1N566 1N5645A 1N5558 1N5630A 1N5631A 1N5632A 1N5633A

    RJL60S5DPP-E0

    Abstract: RJL60S5 R07DS0819EJ0100
    Text: Preliminary Datasheet RJL60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0819EJ0100 Rev.1.00 Feb 04, 2013 Features • Superjunction MOSFET  Built-in fast recovery diode trr = 170 ns typ. at IF = 20 A, VGS = 0, diF/dt = 100 A/s, Ta = 25C


    Original     		PDF RJL60S5DPP-E0 R07DS0819EJ0100 PRSS0003AG-A O-220FP) RJL60S5DPP-E0 RJL60S5

    RJL60S5

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJL60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0817EJ0001 Rev.0.01 Jun 21, 2012 Features • Superjunction MOSFET  Built-in fast recovery diode  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)


    Original     		PDF RJL60S5DPE R07DS0817EJ0001 PRSS0004AE-B RJL60S5

    RJL60S5

    Abstract: RJL60S5DPE
    Text: Preliminary Datasheet RJL60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0817EJ0001 Rev.0.01 Jun 21, 2012 Features • Superjunction MOSFET  Built-in fast recovery diode  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)


    Original     		PDF RJL60S5DPE R07DS0817EJ0001 PRSS0004AE-B RJL60S5 RJL60S5DPE

    RJL60S5

    Abstract: PRSS0004ZH-A fet 600V 20A RJL60S5DPK-M0
    Text: Preliminary Datasheet RJL60S5DPK-M0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0818EJ0002 Rev.0.02 Jun 21, 2012 Features • Superjunction MOSFET  Built-in fast recovery diode  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)


    Original     		PDF RJL60S5DPK-M0 R07DS0818EJ0002 PRSS0004ZH-A RJL60S5 PRSS0004ZH-A fet 600V 20A RJL60S5DPK-M0

    RJL60S5

    Abstract: R07DS0819EJ0001
    Text: Preliminary Datasheet RJL60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0819EJ0001 Rev.0.01 Jun 21, 2012 Features • Superjunction MOSFET  Built-in fast recovery diode  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)


    Original     		PDF RJL60S5DPP-E0 R07DS0819EJ0001 PRSS0003AG-A O-220FP) RJL60S5

    RJL60S5

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJL60S5DPK-M0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0818EJ0002 Rev.0.02 Jun 21, 2012 Features • Superjunction MOSFET  Built-in fast recovery diode  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)


    Original     		PDF RJL60S5DPK-M0 R07DS0818EJ0002 PRSS0004ZH-A RJL60S5

    Untitled

    Abstract: No abstract text available
    Text: 1N6108A thru 1N6136A Standard 500W Bi-directional TVS SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5074, REV. C AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT * SJ*, SX*, SV*, SS* Bi-directional Transient Voltage Suppressor Diode, 500W


    Original     		PDF 1N6108A 1N6136A MIL-PRF-19500/516 1N6108A/US 1N6109A/UStasheet

    1n4109-1

    Abstract: zener diode 10 sv
    Text: 1N4100-1/UR-1 to 1N4135-1/UR-1 SENSITRON SEMICONDUCTOR SJ SV SX SS TECHNICAL DATA DATASHEET 5095, Rev A.1 Zener 1.5W DIODE • Zener voltage available from 12V to 100V • Sharp Zener knee • Metallurgically bonded Type Number 1N4100-1/UR ‐1


    Original     		PDF 1N4100-1/UR-1 1N4135-1/UR-1 1N41001/UR 1N41011/UR 1N41021/UR 1N41031/UR 1N41041/UR 1N41051/UR 1N41061/UR 1N41071/UR 1n4109-1 zener diode 10 sv

    1n4109-1

    Abstract: No abstract text available
    Text: 1N4106-1/UR-1 to 1N4135-1/UR-1 SENSITRON SEMICONDUCTOR SJ SV SX TECHNICAL DATA DATASHEET 5095, Rev A Zener 1.5W DIODE • Zener voltage available from 12V to 100V • Sharp Zener knee • Metallurgically bonded Type Number 1N4106-1/UR -1 1N4107-1/UR -1 1N4108-1/UR -1


    Original     		PDF 1N4106-1/UR-1 1N4135-1/UR-1 1N4106-1/UR 1N4107-1/UR 1N4108-1/UR 1N4109-1/UR 1N4110-1/UR 1N4111-1/UR 1N4112-1/UR 1N4113-1/UR 1n4109-1

    Diode SJ 56

    Abstract: diode sj pj+939+diode
    Text: SK50GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK50GD12T4T .5'( @BVV P WR K =' Q WV SJ XV K @RV K Z BV P =T Q @RV SJ @V _' =' Q BR SJ XV K =' Q WV SJ


    Original     		PDF SK50GD12T4T Diode SJ 56 diode sj pj+939+diode

    pj 72 diode

    Abstract: Diode SJ 12 pj 86 diode Diode SJ
    Text: SK75GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK75GD12T4T .5'( @BVV P @VB K =' Q WV SJ X@ K BBR K Z BV P =T Q @RV SJ @V ^' =' Q BR SJ XC K =' Q WV SJ


    Original     		PDF SK75GD12T4T pj 72 diode Diode SJ 12 pj 86 diode Diode SJ

    pj 56 diode

    Abstract: semikron 3Y diode PJ diode ph9a
    Text: SK100GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK100GD12T4T .5'( @BVV P @BX K =' Q WV SJ @VV K CVV K Z BV P =T Q @RV SJ @V _' =' Q BR SJ @VB K =' Q WV SJ


    Original     		PDF SK100GD12T4T pj 56 diode semikron 3Y diode PJ diode ph9a

    Untitled

    Abstract: No abstract text available
    Text: AMMP-6430 27-34 GHz, 0.5W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6430 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 27GHz and 34GHz. At 30GHz, it provides 29dBm


    Original     		PDF AMMP-6430 AMMP-6430 27GHz 34GHz. 30GHz, 29dBm AV02-0623EN

    6R380C6

    Abstract: CoolMOS Power Transistor 6R380C6 IPD60R380C6 IPA60R380C6 SMD TRANSISTOR MARKING code TC TRANSISTOR SMD MARKING CODE IPB60R380C6 smd transistor c6 15 6r380 CoolMOS Power Transistor
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R380C6 Data Sheet Rev. 2.0, 2009-08-27 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPD60R380C6, IPI60R380C6


    Original     		PDF IPx60R380C6 IPD60R380C6, IPI60R380C6 IPB60R380C6, IPP60R380C6 IPA60R380C6 6R380C6 CoolMOS Power Transistor 6R380C6 IPD60R380C6 IPA60R380C6 SMD TRANSISTOR MARKING code TC TRANSISTOR SMD MARKING CODE IPB60R380C6 smd transistor c6 15 6r380 CoolMOS Power Transistor

    6R380C6

    Abstract: CoolMOS Power Transistor 6R380C6 g1 TRANSISTOR SMD MARKING CODE SMD mosfet MARKING code C6 CoolMOS Power Transistor SMD TRANSISTOR MARKING code TC IPA60R380C6 TRANSISTOR SMD MARKING CODE IPB60R380C6 IPD60R380C6
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R380C6 Data Sheet Rev. 2.0, 2009-08-27 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R380C6, IPI60R380C6 IPB60R380C6, IPP60R380C6


    Original     		PDF IPx60R380C6 IPD60R380C6, IPI60R380C6 IPB60R380C6, IPP60R380C6 IPA60R380C6 6R380C6 CoolMOS Power Transistor 6R380C6 g1 TRANSISTOR SMD MARKING CODE SMD mosfet MARKING code C6 CoolMOS Power Transistor SMD TRANSISTOR MARKING code TC IPA60R380C6 TRANSISTOR SMD MARKING CODE IPB60R380C6 IPD60R380C6

    6R600C6

    Abstract: IPA60R600C6 IPD60R600C6 IPP60R600C6 6R600 Diode SMD SJ 19 IPB60R600C6 JESD22 transistor smd code marking SJ
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R600C6 Data Sheet Rev. 2.0, 2009-08-27 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPD60R600C6, IPB60R600C6


    Original     		PDF IPx60R600C6 IPD60R600C6, IPB60R600C6 IPP60R600C6, IPA60R600C6 6R600C6 IPA60R600C6 IPD60R600C6 IPP60R600C6 6R600 Diode SMD SJ 19 IPB60R600C6 JESD22 transistor smd code marking SJ

    6R380C6

    Abstract: CoolMOS Power Transistor 6R380C6 6r380 SMD mosfet MARKING code C6 6R38 SMD TRANSISTOR MARKING code TC IPD60R380C6 mosfet 600v 48a IPB60R380C6 transistor smd code marking SJ
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R380C6 Data Sheet Rev. 2.0, 2009-08-27 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPD60R380C6, IPI60R380C6


    Original     		PDF IPx60R380C6 IPD60R380C6, IPI60R380C6 IPB60R380C6, IPP60R380C6 IPA60R380C6 6R380C6 CoolMOS Power Transistor 6R380C6 6r380 SMD mosfet MARKING code C6 6R38 SMD TRANSISTOR MARKING code TC IPD60R380C6 mosfet 600v 48a IPB60R380C6 transistor smd code marking SJ

    6R600C6

    Abstract: IPD60R600C6 TRANSISTOR SMD MARKING CODE infineon marking TO-252 IPA60R600C6 IPP60R600C6 6R600c c6 transistor MOSFET TRANSISTOR SMD MARKING CODE 7 IPB60R600C6
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R600C6 Data Sheet Rev. 2.0, 2009-08-27 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPD60R600C6, IPB60R600C6


    Original     		PDF IPx60R600C6 IPD60R600C6, IPB60R600C6 IPP60R600C6, IPA60R600C6 6R600C6 IPD60R600C6 TRANSISTOR SMD MARKING CODE infineon marking TO-252 IPA60R600C6 IPP60R600C6 6R600c c6 transistor MOSFET TRANSISTOR SMD MARKING CODE 7 IPB60R600C6

    6R600C6

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE 11 IPA60R600C6 IPB60R600C6 IPD60R600C6 IPP60R600C6 JESD22 to252 footprint wave soldering Diode SMD SJ 19
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R600C6 Data Sheet Rev. 2.0, 2009-08-27 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R600C6, IPB60R600C6 IPP60R600C6, IPA60R600C6


    Original     		PDF IPx60R600C6 IPD60R600C6, IPB60R600C6 IPP60R600C6, IPA60R600C6 6R600C6 MOSFET TRANSISTOR SMD MARKING CODE 11 IPA60R600C6 IPB60R600C6 IPD60R600C6 IPP60R600C6 JESD22 to252 footprint wave soldering Diode SMD SJ 19