CPD92
Abstract: Schottky Diode 1N6263 CMDD6263 CMKD6263 CMOD6263 CMPD6263 CMSD6263
Text: PROCESS CPD92 Central Schottky Diode TM Semiconductor Corp. High Voltage Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 7.9 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å
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CPD92
CMDD6263
CMKD6263
CMOD6263
CMPD6263
CMSD6263
1N6263
CPD92
Schottky Diode
1N6263
CMDD6263
CMKD6263
CMOD6263
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"Schottky Diode"
Abstract: 1N6263 Schottky diode Die Schottky diode wafer CMOD6263 CMPD6263 CMSD6263 CPD92V CMDD6263 CMKD6263
Text: PROCESS CPD92V Schottky Diode High Voltage Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å
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CPD92V
CMDD6263
CMKD6263
CMLD6263
CMOD6263
CMPD6263
CMSD6263
CMUD6263
1N6263
"Schottky Diode"
1N6263
Schottky diode Die
Schottky diode wafer
CMOD6263
CPD92V
CMDD6263
CMKD6263
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schottky diode high voltage
Abstract: diode schottky 29 1N6263 diode 29 CMDD6263 CMKD6263 CMLD6263 CMOD6263 CMPD6263 CMSD6263
Text: PROCESS CPD92V Schottky Diode High Voltage Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å
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CPD92V
CMDD6263
CMKD6263
CMLD6263
CMOD6263
CMPD6263
CMSD6263
CMUD6263
1N6263
schottky diode high voltage
diode schottky 29
1N6263
diode 29
CMDD6263
CMKD6263
CMOD6263
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"Schottky Diode"
Abstract: 1N6263 CMDD6263 CMKD6263 CMLD6263 CMOD6263 CMPD6263 CMSD6263 CMUD6263E
Text: PROCESS CPD102X Schottky Diode High Voltage Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 5.9 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å
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CPD102X
CMDD6263
CMKD6263
CMLD6263
CMOD6263
CMPD6263
CMSD6263
CMUD6263E
1N6263
27-September
"Schottky Diode"
1N6263
CMDD6263
CMKD6263
CMOD6263
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DIODE 720
Abstract: "Schottky Diode" DIODE R3 CPD48V high current schottky diode
Text: PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 13.8 x 13.8 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å
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CPD48V
22-March
DIODE 720
"Schottky Diode"
DIODE R3
CPD48V
high current schottky diode
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high current schottky diode
Abstract: CPD48V "Schottky Diode" DIODE 3T Schottky diode wafer
Text: PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 x 14 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å
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CPD48V
high current schottky diode
CPD48V
"Schottky Diode"
DIODE 3T
Schottky diode wafer
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CPD48V
Abstract: No abstract text available
Text: PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 x 14 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å
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CPD48V
CPD48V
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Untitled
Abstract: No abstract text available
Text: PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 x 14 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å
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CPD48V
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cms diode
Abstract: Diode schottky cms HSMS8202 package marking schottky diode hsms8202 uA 733 CMS2802 CMS2802DS Cross Reference sot23 microwave mixer diode
Text: Preliminary Data CMS-2802 Microwave Mixer Diode Description: Features: The Zywyn CMS-2802 Schottky Diode is designed for applications ranging from 10~14 GHz. It is optimized for use in X/Ku bands and is ideal for downconverter applications. It is available in plastic SOT-23 standard
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CMS-2802
CMS-2802
OT-23
packa05)
CMS2802DS
06/03A
CMS2802
HSMS8202
CMS-2802-TR2
CMS-2802-TR1
cms diode
Diode schottky cms
HSMS8202
package marking
schottky diode hsms8202
uA 733
CMS2802
Cross Reference sot23
microwave mixer diode
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CMS16
Abstract: No abstract text available
Text: CMS16 TOSHIBA Schottky Barrier Diode CMS16 Switching Mode Power Supply Applications Portable Equipment Battery Applications DC-DC Converter Applications Symbol Repetitive peak reverse voltage VRRM Average forward current IF AV Nonrepetitive peak surge current
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CMS16
CMS16
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Untitled
Abstract: No abstract text available
Text: CMS16 TOSHIBA Schottky Barrier Diode CMS16 Switching Mode Power Supply Applications Portable Equipment Battery Applications DC-DC Converter Applications Symbol Repetitive peak reverse voltage VRRM Average forward current IF AV Nonrepetitive peak surge current
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CMS16
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2N3904 TRANSISTOR SMD
Abstract: 2L smd transistor transistor SMD 2n3904 ny smd transistor 2N2222A npn transistor 2N3904 NPN Transistor SOT23 transistor 2N2222A smd TRANSISTOR NY smd transistor 2l transistor 2N3906 smd
Text: New in this issue Hauppauge, NY USA – August 2, 2001 • NEW! ULTRAmini Transistors Featured Product Current Limiting Diodes Practical Applications for Current Limiting Diodes - by Sze Chin • NEW! ½ Amp Schottky The current limiting diode CLD or current regulating diode
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OD-123
2N3904 TRANSISTOR SMD
2L smd transistor
transistor SMD 2n3904
ny smd transistor
2N2222A npn transistor
2N3904 NPN Transistor
SOT23 transistor 2N2222A
smd TRANSISTOR NY
smd transistor 2l
transistor 2N3906 smd
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CMS20
Abstract: No abstract text available
Text: CMS20 TOSHIBA Schottky Barrier Diode CMS20 Switching Mode Power Supply Applications Portable Equipment Battery Applications Symbol Rating Unit Repetitive peak reverse voltage VRRM 60 V Average forward current IF AV Non-repetitive peak surge current Junction temperature
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CMS20
25lled
CMS20
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CMS17
Abstract: No abstract text available
Text: CMS17 TOSHIBA Schottky Barrier Diode CMS17 Switching Mode Power Supply Applications Portable Equipment Battery Applications • Unit: mm Forward voltage: VFM = 0.48 V max • Average forward current: IF (AV) = 2.0 A • Repetitive peak reverse voltage: VRRM = 30 V
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CMS17
CMS17
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Untitled
Abstract: No abstract text available
Text: CMS30I30A Schottky Barrier Diode CMS30I30A 1. Applications • Secondary Rectification in Switching Regulators • Reverse-Current Protection in Mobile Devices 2. Features 1 Peak forward voltage: VFM = 0.49 V (max)@IF = 3.0 A (2) Average forward current: IF(AV) = 3.0 A
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CMS30I30A
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CMS17
Abstract: No abstract text available
Text: CMS17 TOSHIBA Schottky Barrier Diode CMS17 Switching Mode Power Supply Applications Portable Equipment Battery Applications • • • • Unit: mm Forward voltage: VFM = 0.48 V max Average forward current: IF (AV) = 2.0 A Repetitive peak reverse voltage: VRRM = 30 V
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CMS17
CMS17
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Untitled
Abstract: No abstract text available
Text: CMS20I30A Schottky Barrier Diode CMS20I30A 1. Applications • Secondary Rectification in Switching Regulators • Reverse-Current Protection in Mobile Devices 2. Features 1 Peak forward voltage: VFM = 0.45 V (max)@IFM = 2.0 A (2) Average forward current: IF(AV) = 2.0 A
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CMS20I30A
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Untitled
Abstract: No abstract text available
Text: CMS20I40A Schottky Barrier Diode CMS20I40A 1. Applications • Secondary Rectification in Switching Regulators • Reverse-Current Protection in Mobile Devices 2. Features 1 Peak forward voltage: VFM = 0.52 V (max) @IFM = 2 A (2) Average forward current: IF(AV) = 2 A
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CMS20I40A
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Untitled
Abstract: No abstract text available
Text: CMS10I30A Schottky Barrier Diode CMS10I30A 1. Applications • Secondary Rectification in Switching Regulators • Reverse-Current Protection in Mobile Devices 2. Features 1 Peak forward voltage: VFM = 0.36 V (max) @IFM = 1 A (2) Average forward current: IF(AV) = 1 A
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CMS10I30A
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CMS17
Abstract: No abstract text available
Text: CMS17 TOSHIBA Schottky Barrier Diode CMS17 Switching Mode Power Supply Applications Portable Equipment Battery Applications • • • • Unit: mm Forward voltage: VFM = 0.48 V max Average forward current: IF (AV) = 2.0 A Repetitive peak reverse voltage: VRRM = 30 V
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CMS17
CMS17
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Untitled
Abstract: No abstract text available
Text: CMS17 TOSHIBA Schottky Barrier Diode CMS17 Switching Mode Power Supply Applications Portable Equipment Battery Applications • • • • Unit: mm Forward voltage: VFM = 0.48 V max Average forward current: IF (AV) = 2.0 A Repetitive peak reverse voltage: VRRM = 30 V
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CMS17
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Untitled
Abstract: No abstract text available
Text: CMS17 TOSHIBA Schottky Barrier Diode CMS17 Switching Mode Power Supply Applications Portable Equipment Battery Applications • • • • Unit: mm Forward voltage: VFM = 0.48 V max Average forward current: IF (AV) = 2.0 A Repetitive peak reverse voltage: VRRM = 30 V
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CMS17
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M-FLAT
Abstract: CMS30I30A
Text: CMS30I30A Schottky Barrier Diode CMS30I30A 1. Applications • Secondary Rectification in Switching Regulators • Reverse-Current Protection in Mobile Devices 2. Features 1 Peak forward voltage: VFM = 0.49 V (max)@IF = 3.0 A (2) Average forward current: IF(AV) = 3.0 A
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CMS30I30A
M-FLAT
CMS30I30A
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Untitled
Abstract: No abstract text available
Text: CMS15I40A Schottky Barrier Diode CMS15I40A 1. Applications • Secondary Rectification in Switching Regulators • Reverse-Current Protection in Mobile Devices 2. Features 1 Peak forward voltage: VFM = 0.49 V (max) @IFM = 1.5 A (2) Average forward current: IF(AV) = 1.5 A
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CMS15I40A
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