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    CPD48V Search Results

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    CPD48V Price and Stock

    Central Semiconductor Corp CPD48V-CBAT54-CM

    - Waffle Pack (Alt: CPD48V-CBAT54-CM)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas CPD48V-CBAT54-CM Waffle Pack 38 Weeks 400
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    Central Semiconductor Corp CPD48V-CBAT54-CT

    Diode Schottky 30V 200mA Tray - Waffle Pack (Alt: CPD48V-CBAT54-CT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas CPD48V-CBAT54-CT Waffle Pack 3 Weeks 400
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    CPD48V Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CPD48V Central Semiconductor Schottky Diode High Current Schottky Diode Chip Original PDF

    CPD48V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIODE 720

    Abstract: "Schottky Diode" DIODE R3 CPD48V high current schottky diode
    Text: PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 13.8 x 13.8 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å


    Original     		PDF CPD48V 22-March DIODE 720 "Schottky Diode" DIODE R3 CPD48V high current schottky diode

    CPD48V

    Abstract: No abstract text available
    Text: PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 x 14 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å


    Original     		PDF CPD48V CPD48V

    Untitled

    Abstract: No abstract text available
    Text: PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 x 14 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å


    Original     		PDF CPD48V

    high current schottky diode

    Abstract: CPD48V "Schottky Diode" DIODE 3T Schottky diode wafer
    Text: PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 x 14 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å


    Original     		PDF CPD48V high current schottky diode CPD48V "Schottky Diode" DIODE 3T Schottky diode wafer

    CP588V

    Abstract: CPD76 CPD96 CP-392V CP307 CP188 CP191 CPD48 CPD80 CPD91
    Text: PCN #: 105 Notification Date: 24 November 2004 145 Adams Avenue Hauppauge, New York 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Mailto: processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Small signal discrete semiconductors, wafers, and die in chip form.


    Original     		PDF CPD48 CPD76 CPD78 CPD80 CPD83 CPD88 CPD91 CPD92 CPD96 CP188 CP588V CPD76 CPD96 CP-392V CP307 CP188 CP191 CPD48 CPD80 CPD91

    BF244 datasheet

    Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
    Text: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216


    Original     		PDF 1N456 CPD64 1N456A. 1N457 1N457A. 1N458 BF244 datasheet 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910

    UJT 2n3904

    Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
    Text: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24


    Original     		PDF

    2N2645

    Abstract: cpd83v-cmpd7000-ws 1N3070 CPZ25 CPD83V-1N4148-WN CP191V-2N2222A-WN CPZ25-CMZ5937B-WR CPD83V CPD83V-1N4148-WS CPD98V
    Text: PCN #: 119 Notification Date: 16 December 2010 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Product / Process Change Notice Parts Affected: Small signal discrete semiconductor wafers. Extent of Change: Wafer diameter has been changed from 4” to 5”.


    Original     		PDF CPD83V-1N914-WN CPD83V-1N914A-WN CPD83V-CMPD7000-WS CPD83V-1N4148-WS CPD83V-1N914-WR CPD92X-CMPD6263-WR CPZ25-CMZ5937B-WN CPZ25-CMZ5940B-WN CPZ25-1N4752A-WN CPZ25-1N5918B-WN 2N2645 cpd83v-cmpd7000-ws 1N3070 CPZ25 CPD83V-1N4148-WN CP191V-2N2222A-WN CPZ25-CMZ5937B-WR CPD83V CPD83V-1N4148-WS CPD98V