AN 22022
Abstract: No abstract text available
Text: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery
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SDT10S60
PG-TO220-2-2.
Q67040S4643
D10S60
AN 22022
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SDT10S60
Abstract: No abstract text available
Text: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery
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SDT10S60
P-TO220-2-2.
D10S60
Q67040S4643
SDT10S60
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D10S60
Abstract: DIODE 200A 600V schottky PG-TO-220-2-2 Schottky diode TO220 SDT10S60
Text: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery
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SDT10S60
PG-TO220-2-2.
D10S60
Q67040S4643
PG-TO-220-2-2
D10S60
DIODE 200A 600V schottky
PG-TO-220-2-2
Schottky diode TO220
SDT10S60
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D10S60
Abstract: pg-to220-2-2
Text: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery
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SDT10S60
PG-TO220-2-2.
Q67040S4643
D10S60
D10S60
pg-to220-2-2
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IDW40G120C5B
Abstract: No abstract text available
Text: Silicon Carbide Schottky Diode IDW40G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW40G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1
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IDW40G120C5B
IDW40G120C5B
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Untitled
Abstract: No abstract text available
Text: Silicon Carbide Schottky Diode IDW15G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW15G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1
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IDW15G120C5B
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Untitled
Abstract: No abstract text available
Text: Silicon Carbide Schottky Diode IDW20G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW20G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1
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IDW20G120C5B
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Schottky Diode 40V 2A
Abstract: marking ma sot23-6 ZHCS2000 320 sot236 ZLLS1000TA ZLLS1000TC ZLLS2000 marking L10
Text: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage
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ZLLS2000
OT23-6
Schottky Diode 40V 2A
marking ma sot23-6
ZHCS2000
320 sot236
ZLLS1000TA
ZLLS1000TC
ZLLS2000
marking L10
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ZHCS2000
Abstract: ZLLS2000 ZLLS2000TA ZLLS2000TC LL-20 DIODE SCHOTTKY 40V 500MA marking ll20
Text: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage
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ZLLS2000
OT23-6
ZHCS2000
ZLLS2000
ZLLS2000TA
ZLLS2000TC
LL-20
DIODE SCHOTTKY 40V 500MA
marking ll20
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ZHCS2000
Abstract: ZLLS2000 ZLLS2000TA ZLLS2000TC DIODE SCHOTTKY 40V 500MA 2222 diode
Text: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage
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ZLLS2000
OT23-6
ZHCS2000
ZLLS2000
ZLLS2000TA
ZLLS2000TC
DIODE SCHOTTKY 40V 500MA
2222 diode
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TS16949
Abstract: ZHCS2000 ZLLS2000 ZLLS2000TA ZLLS2000TC schottky diode high voltage
Text: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage
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ZLLS2000
OT23-6
Schot6100
TS16949
ZHCS2000
ZLLS2000
ZLLS2000TA
ZLLS2000TC
schottky diode high voltage
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zd1 1014
Abstract: 217F C10A C12A capacitor ceramic optocupler transistor MTBF
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25℃ Load : 110VAC input , Full load Unit : ZPD40-512 Ver: V1.0 Date: 11/29/2004 CAT TYPE Q'ty 5.1 Microcircuits,MOS 1 6.1 Diode,General 1 6.1 Diode,General 1 6.1 Diode, Schottky 1 6.1 Diode, Schottky
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110VAC
ZPD40-512
zd1 1014
217F
C10A
C12A
capacitor ceramic
optocupler
transistor MTBF
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Marking Code 72
Abstract: smd schottky diode marking 72 B 817 marking code 203 sot323 package
Text: DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D102 1PS70SB20 Schottky barrier diode Product specification 2001 Mar 16 Philips Semiconductors Product specification Schottky barrier diode 1PS70SB20 FEATURES DESCRIPTION • Ultra high switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection
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M3D102
1PS70SB20
OT323
SC-70)
MAM394
613514/01/pp8
Marking Code 72
smd schottky diode marking 72
B 817
marking code 203 sot323 package
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str 6707
Abstract: BP317 Diode smd code 805 SMD 2211 smd schottky diode marking 72 BAT254
Text: DISCRETE SEMICONDUCTORS DATA SHEET L4 dbook, halfpage M3D177 BAT254 Schottky barrier diode Product specification 1996 Mar 19 Philips Semiconductors Product specification Schottky barrier diode BAT254 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD110 very small ceramic
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M3D177
BAT254
BAT254
OD110
MAM214
OD110)
SCDS48
117021/1100/01/pp8
str 6707
BP317
Diode smd code 805
SMD 2211
smd schottky diode marking 72
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BAS270
Abstract: BP317 BAS27
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 BAS270 Schottky barrier diode Product specification 2001 Feb 05 Philips Semiconductors Product specification Schottky barrier diode BAS270 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated guard ring for stress protection.
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M3D154
BAS270
MAM214
OD110)
613514/01/pp8
BAS270
BP317
BAS27
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BAS240
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 BAS240 Schottky barrier diode Product specification 2001 Feb 05 Philips Semiconductors Product specification Schottky barrier diode BAS240 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated guard ring for stress protection.
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M3D154
BAS240
MAM214
OD110)
613514/01/pp8
BAS240
BP317
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Untitled
Abstract: No abstract text available
Text: NTHD3101F Power MOSFET and Schottky Diode −20 V, FETKYt, P−Channel, −4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package
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NTHD3101F
NTDH3101F/D
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onsemi 035 Schottky diode
Abstract: diode Marking code t5
Text: NTGD3147F Power MOSFET and Schottky Diode −20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 Features • • • • • • Fast Switching Low Gate Change Low RDS on Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility
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NTGD3147F
NTGD3147F/D
onsemi 035 Schottky diode
diode Marking code t5
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NTLJF3117P
Abstract: NTLJF3117PT1G NTLJF3117PTAG high current schottky diode
Text: NTLJF3117P Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, mCool] Package http://onsemi.com Features • FETKYt Configuration with MOSFET plus Low Vf Schottky Diode • mCOOLt Package Provides Exposed Drain Pad for Excellent
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NTLJF3117P
SC-88
NTLJF3117P/D
NTLJF3117P
NTLJF3117PT1G
NTLJF3117PTAG
high current schottky diode
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NTHD3101FT1
Abstract: NTHD3101FT1G NTHD3101F NTHD3101FT3 NTHD3101FT3G
Text: NTHD3101F Power MOSFET and Schottky Diode −20 V, FETKYt, P−Channel, −4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package
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NTHD3101F
NTDH3101F/D
NTHD3101FT1
NTHD3101FT1G
NTHD3101F
NTHD3101FT3
NTHD3101FT3G
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Untitled
Abstract: No abstract text available
Text: NTLJF3117P Power MOSFET and Schottky Diode -20 V, -4.1 A, P-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, mCool] Package http://onsemi.com Features •ăFETKYt Configuration with MOSFET plus Low Vf Schottky Diode •ămCOOLt Package Provides Exposed Drain Pad for Excellent
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NTLJF3117P
SC-88
NTLJF3117P/D
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NTLJF3117PT1G
Abstract: 5M MARKING CODE SCHOTTKY DIODE tl 72 oz NTLJF3117P
Text: NTLJF3117P Power MOSFET and Schottky Diode -20 V, -4.1 A, P-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, mCool] Package http://onsemi.com Features •ăFETKYt Configuration with MOSFET plus Low Vf Schottky Diode •ămCOOLt Package Provides Exposed Drain Pad for Excellent
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NTLJF3117P
SC-88
NTLJF3117P/D
NTLJF3117PT1G
5M MARKING CODE SCHOTTKY DIODE
tl 72 oz
NTLJF3117P
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NTLJF3117PTAG
Abstract: NTLJF3117P NTLJF3117PT1G high current schottky diode
Text: NTLJF3117P Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, mCool] Package http://onsemi.com Features • FETKYt Configuration with MOSFET plus Low Vf Schottky Diode • mCOOLt Package Provides Exposed Drain Pad for Excellent
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NTLJF3117P
SC-88
NTLJF3117P/D
NTLJF3117PTAG
NTLJF3117P
NTLJF3117PT1G
high current schottky diode
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diode cross reference
Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Text: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE
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OCR Scan
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MA40401
MA40402
MA40404
MA40405
MA40406
MA40408
diode cross reference
schottky diode cross reference
MV3110
AH513
AH761
AH512
impatt diode
Gunn Diode
AH370
DMK-6606
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