DIODE SB5100 Search Results

DIODE SB5100 Result Highlights (5)

Part	Manufacturer	Description
CUZ24V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 24 V, USC
XCUZ13V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 13.0 V, USC
XCUZ36V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 36.0 V, USC
CUZ12V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 12 V, USC
MUZ5V6	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 5.6 V, USM

DIODE SB5100 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
diode sb5100 Abstract: SB520-SB5100 Diode SB530 RS-296-E SB5100 SB520 SB530 SB540 SB550 SB560 Text: SB520 – SB5100 WTE POWER SEMICONDUCTORS Pb 5.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability	Original	SB520 SB5100 DO-201AD DO-201AD, MIL-STD-202, diode sb5100 SB520-SB5100 Diode SB530 RS-296-E SB5100 SB520 SB530 SB540 SB550 SB560	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD SB5100 DIODE 5.0A SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC SB5100 is a 5.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide customers with high surge capability, high current capability and high efficiency, etc.	Original	SB5100 SB5100 SB5100L-SMC-R SB5100G-SMC-R SB5100L-Z21D-R SB5100G-Z21D-R DO-201AD QW-R601-248	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD SB5100 DIODE 5.0A SCHOTTKY BARRIER RECTIFIER  DESCRIPTION + The UTC SB5100 is a 5.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide customers with high surge capability, high current capability and high efficiency, etc.	Original	SB5100 SB5100 DO-201AD DO-214AB) DO-214AC) DO-214AA) SB510at QW-R601-248	PDF
Untitled Abstract: No abstract text available Text: SB520 – SB5100 WTE POWER SEMICONDUCTORS Pb 5.0A SCHOTTKY BARRIER DIODE Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection High Current Capability A B Low Power Loss, High Efficiency High Surge Current Capability	Original	SB520 SB5100 DO-201AD DO-201AD, MIL-STD-202,	PDF
SB550-G Abstract: SB545-G SB520-G SB560-G SB580-G SB5100-G 5100G Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520-G Thru. SB5100-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. 1.0 25.4 Min. -Metal-Semiconductor junction with guard ring 0.210(5.3) 0.189(4.8)	Original	SB520-G SB5100-G DO-201AD UL94-V0 MIL-STD-750 45B-G SB550B-G SB560B-G SB580B-G SB550-G SB545-G SB560-G SB580-G SB5100-G 5100G	PDF
SB545 Abstract: No abstract text available Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520-G Thru. SB5100-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. -Metal-Semiconductor junction with guard ring 1.0 25.4 Min. 0.210(5.3) 0.189(4.8)	Original	SB520-G SB5100-G DO-201AD UL94-V0 MIL-STD-750 SB550B-G SB560B-G SB580B-G SB5100B-G SB545	PDF
DI108S Abstract: SK5100 CP2506 sb5200 SB840 Text: Diode & Rectifiers Diode & Rectifiers MERITEK RoHS TABLE OF CONTENT • PLASTIC PASSIVATED JUNCTION RECTIFIER o General Purpose	Original	38x45Â DI108S SK5100 CP2506 sb5200 SB840	PDF
Untitled Abstract: No abstract text available Text: SB520 – SB5100 5.0A SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Schottky Barrier Chip     Guard Ring for Transient and ESD Protection Surge Overload Rating to 150A Peak Low Power Loss, High Efficiency Ideally Suited for Use in High Frequency	Original	SB520 SB5100 DO-201AD, MIL-STD-202, DO-201AD	PDF
Untitled Abstract: No abstract text available Text: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520E-G Thru. SB5100E-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. -5.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free	Original	SB520E-G SB5100E-G DO-201AD IEC6100-4-2 UL94-V0 MIL-STD-750 Method60E SB580E SB5100E	PDF
SB545E-G Abstract: SB520E-G SB550E-G SB560E-G SB580E-G SB5100E-G Text: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520E-G Thru. SB5100E-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. -5.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free	Original	SB520E-G SB5100E-G DO-201AD IEC6100-4-2 UL94-V0 MIL-STD-750 B560E SB580E SB5100E SB545E-G SB550E-G SB560E-G SB580E-G SB5100E-G	PDF
OZ 9983 Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —	Original	MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45	PDF
1n5822 trr Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay	Original	MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50	PDF
mur1650 Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and	Original	MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount	PDF
FE16B Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —	Original	MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent	PDF

MR2835S equivalent Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502 Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected	Original	MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502	PDF
equivalent components of diode 1N5399 Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected	Original	MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode	PDF
transistor 2N5952 Abstract: transistor KSP44 bc558 zener diode reference guide 1n967b schottky 1n5248 KBL BRIDGE RECTIFIER 005 FYPF2004DN BAV99Wt1g BC337 Text: Small Signal Transistors & Diodes Selection Guide Fairchild Semiconductor, a long-time, leading global supplier of high performance semiconductors, offers a broad range of small signal transistor and diode products—from JFETs, Schottky, and rectifiers, to RF transistors, TRIACs and more. You will not only find the performance that you want, you will also	Original		PDF
common anode schottky to220 Abstract: 1N5822 SS34 Schottky diode TO220 SS14 DIODE schottky Common Anode Schottky Rectifier SS24 DIODE schottky SS14 SOD123 diode sb340 FYPF2004DN 247 DIODE schottky Text: Discrete Schottky Products VRRM IF AV VFM IRM Maximum Average Maximum Maximum Instantaneous IFSM (A) Repetitive Rectified Instantaneous Reverse Current Reverse Forward Forward ROJA (Cel/W) Voltage (V) Current (A) Voltage (V) @VR (V) (uA) Termal Resistance	Original	1N5820 1N5821 1N5822 SB3100 SB330 SB340 MBR4035PT MBR4045PT MBR4050PT MBR4060PT common anode schottky to220 1N5822 SS34 Schottky diode TO220 SS14 DIODE schottky Common Anode Schottky Rectifier SS24 DIODE schottky SS14 SOD123 diode sb340 FYPF2004DN 247 DIODE schottky	PDF
S78DM12Q Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300 Text: 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power	Original	SN431) SUN0550F/D O-220AB-3L O-220F-3L O-220F-4SL DIP-14 DIP-20 DIP-18 S78DM12Q Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300	PDF
07N65 Abstract: fusible 1a SMD LN4148 10471 VARISTOR Text: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT51X Rev 1.5 Oct 2012 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 4,6,8,10,12,14,16,18,20,22,24 2012-Oct– 19	Original	ACT51X 2012-Octâ ACT512 PC817C -26For 07N65 fusible 1a SMD LN4148 10471 VARISTOR	PDF
RK3026 Abstract: SAMA5 10w led diode charger pad wide REGULATOR sw 13003 10kk thermistor SC053 Text: Contents 1. High Power DC-DC Converter Products ………………….………………………….………….…………………. 3 1.1 DC-DC Product Selection Guide …….………………………………………………………………………………. 4	Original	ACT2801 ACT2802 ACT4501 ACT4523 RK3026 SAMA5 10w led diode charger pad wide REGULATOR sw 13003 10kk thermistor SC053	PDF
230V ac to 5V dc usb charger circuit Abstract: SAMA5 RK3026 s3c2416 charger pad wide Text: Contents 1. High Power DC-DC Converter Products ………………….………………………….………….………….….…. 3 1.1 DC-DC Product Selection Guide …….………………………………………………………………………….……. 4	Original	ACT2801 ACT2801C ACT2802 ACT2802C 230V ac to 5V dc usb charger circuit SAMA5 RK3026 s3c2416 charger pad wide	PDF
diode cross reference Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205 Text: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS	Original		PDF
EE16 12V Abstract: SMD TRANSISTOR B7 EE16 transformer 5v 2.1a t1/epc17 TRANSFORMER smd transistor 12W 3 pins EE16-4 core transformer Text: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT41X Rev 1.4 JUL 2013 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History 2013 - Jul - 22 Rev 1.4 Page 4.5 Update ACT410 5V2.1A application solution transformer and parameter.	Original	ACT41X ACT410 ACT413 EPC17) ACT411 12V1A ACT412 -11For EE16 12V SMD TRANSISTOR B7 EE16 transformer 5v 2.1a t1/epc17 TRANSFORMER smd transistor 12W 3 pins EE16-4 core transformer	PDF

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DIODE SB5100 Search Results

DIODE SB5100 Result Highlights (5)

DIODE SB5100 Datasheets Context Search

diode sb5100

Untitled

Untitled

Untitled

SB550-G

SB545

DI108S

Untitled

Untitled

SB545E-G

OZ 9983

1n5822 trr

mur1650

FE16B

MR2835S equivalent

equivalent components of diode 1N5399

transistor 2N5952

common anode schottky to220

S78DM12Q

07N65

RK3026

230V ac to 5V dc usb charger circuit

diode cross reference

EE16 12V