Untitled
Abstract: No abstract text available
Text: Single Angled Facet SAF Laser Diode 1550 nm semiconductor gain chip (Preliminary) DESCRIPTION Quantum Photonics’ Single Angled Facet (SAF) gain chip is based on high-power InP ridge waveguide laser diode technology. Laser cavity oscillation is prevented by active waveguide engineering to produce a front angled facet which in combination with antireflection coating ensures a broadband low facet reflectivity. Optional mode transformers monolithically incorporated at the facets
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Laser Diode 1550 nm
Abstract: Fabry-Perot 1550 nm Quantum Photonics Single Angled Facet SAF Laser Diode 1550 nm semiconductor gain chip laser diode bare chip 1550 Laser InP tunable lasers diode applications Fabry-Perot-Laser-Diode 1550 laser diode Laser diode Fabry-Perot
Text: Single Angled Facet SAF Laser Diode 1550 nm semiconductor gain chip (Preliminary) DESCRIPTION Quantum Photonics’ Single Angled Facet (SAF) gain chip is based on high-power InP ridge waveguide laser diode technology. Laser cavity oscillation is prevented by active waveguide engineering to produce a front angled facet which in combination with antireflection coating ensures a broadband low facet reflectivity. Optional mode transformers monolithically incorporated at the facets
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murata 455KHz ceramic filter
Abstract: MURATA TRIPLEXER MuRata Gigafil murata 10.7Mhz ceramic filter murata 455khz filter murata vco mqr MURATA Duplexers MURATA TRIPLEXER wifi MURATA VCO Series murata LMSW
Text: Product Selector – by application The table below identifies the various Murata products listed in this brochure, which are suitable for use in some of the most popular RF applications. For other applications, please contact Anglia. RF APPLICATION WiFi Bluetooth
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MM8430
MM8130
murata 455KHz ceramic filter
MURATA TRIPLEXER
MuRata Gigafil
murata 10.7Mhz ceramic filter
murata 455khz filter
murata vco mqr
MURATA Duplexers
MURATA TRIPLEXER wifi
MURATA VCO Series
murata LMSW
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Conventions used in Presenting Technical Data
Abstract: 80057 germanium diode smd R Y SMD TRANSISTOR smd dual transistor G 9 Optocoupler with thyristor OPTOCOUPLER thyristor 4N35-X016 optocoupler SFH615 datasheet suppressor diode smd
Text: Conventions used in Presenting Technical Vishay Semiconductors Conventions used in Presenting Technical Data NOMENCLATURE FOR SEMICONDUCTOR DEVICES ACCORDING TO PRO ELECTRON The type number of semiconductor devices consists of two letters followed by a serial number.
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10-Sep-07
Conventions used in Presenting Technical Data
80057
germanium diode smd
R Y SMD TRANSISTOR
smd dual transistor G 9
Optocoupler with thyristor
OPTOCOUPLER thyristor
4N35-X016
optocoupler SFH615 datasheet
suppressor diode smd
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96N15P
Abstract: TEm 2411
Text: PolarHTTM HiPerFET Power MOSFET ISOPLUS220TM VDSS = 150 V ID25 = 42 A Ω RDS on = 26 mΩ < 200 ns trr IXFC 96N15P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated ISOPLUS 220TM E153432 Symbol Test Conditions
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ISOPLUS220TM
96N15P
220TM
E153432
96N15P
TEm 2411
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Untitled
Abstract: No abstract text available
Text: PolarHTTM HiPerFET Power MOSFET ISOPLUS220TM VDSS = 150 V ID25 = 42 A Ω RDS on = 26 mΩ < 200 ns trr IXFC 96N15P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated ISOPLUS 220TM E153432 Symbol Test Conditions
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ISOPLUS220TM
96N15P
220TM
E153432
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Untitled
Abstract: No abstract text available
Text: PolarHTTM HiPerFET Power MOSFET VDSS ID25 IXFC 96N15P RDS on Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated trr = 150 V = 40 A Ω = 26 mΩ < 200 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C
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96N15P
ISOPLUS220
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BCM 4336
Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06
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B192-H6780-G9-X-7600
D-81669
VDSL5100i-E
VDSL6100i-E
BCM 4336
2A0565
C2335
2A280Z
C1740 bipolar transistor
transistor A1267
a1273 transistor
c2335 r
2B0565
2b265
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Untitled
Abstract: No abstract text available
Text: Advance Information This document contains information on a product under development. The parametric information contains target parameters that are subject to change. M02069 3.3 or 5 Volt VCSEL/FP Laser Driver IC for Applications to 4.3 Gbps The M02069 is a highly integrated, programmable VCSEL driver intended for SFP/SFF modules to 4.3 Gbps. Using
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M02069
M02069
02069-DSH-001-B
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M02080
Abstract: M02069-EVM BLM18HG471SN1 M02069-11
Text: Preliminary Information This document contains information on a new product. The parametric information, although not fully characterized, is the result of testing initial devices. M02069 3.3 or 5 Volt VCSEL/FP Laser Driver IC for Applications to 4.3 Gbps
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M02069
M02069
02069-DSH-001-C
M02080
M02069-EVM
BLM18HG471SN1
M02069-11
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Untitled
Abstract: No abstract text available
Text: M02069 3.3 or 5 Volt VCSEL/FP Laser Driver IC for Applications to 4.3 Gbps Data Sheet Advance Information 02069-DSH-001-A 9/03 Information provided in this Data Sheet is ADVANCE and is subject to change without notice. Mindspeed Technologies , Inc, Proprietary and Confidential
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M02069
02069-DSH-001-A
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Untitled
Abstract: No abstract text available
Text: IXTK 80N25 High Current MegaMOSTM FET VDSS ID25 = 250 V = 80 A Ω = 33 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS
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80N25
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IXTK80N25
Abstract: 80N25 megamos
Text: IXTK 80N25 High Current MegaMOSTM FET VDSS ID25 = 250 V = 80 A Ω = 33 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS
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80N25
IXTK80N25
80N25
megamos
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UAA 1021
Abstract: UAA 267 1NBA
Text: ozoooe wei vv+ xel 'lal 96969s(we w+ :sdornf I gZ-V (eo)18+ xel LgvL-gzze 'lal :curced/ersv r ,Lgr-gzze(ed [s+ 'mlloN sggg-gL9(oog)xel 'lol 9922.99e(008) :ecrrotlrvtluoN 'cut'ulto3-v/w lnoqlM aoupqg o11ce[qngsuoueqllcedg 'llnJJrJuoll?zlrBaull? lnoqll^a pauSlsap aq u?f, slInf,JIJ gf,ns sos€J r(uzur ur pue sJaunu
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o11ce
ratq311
Q4ll40!
0022q
UAA 1021
UAA 267
1NBA
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cce 7100
Abstract: 2579A
Text: Ordering number : ËN2579A I SAfÊYO SB50-18 N0.2579A Schottky B arrier Diode Twin Type • Cathode Common i 180V, 5A Rectifier A p p licatio n s • High frequency rectification (switching regulators, converters, choppers) F e a tu re s •Low forward voltage (Vp max = 0.85V)
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N2579A
SB50-18
N92579-3/3
cce 7100
2579A
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diode S455
Abstract: PTH451C diode smd LDB 107 VARISTOR NTC 10 D 208 MHF 318 FLYBACK RS360 pv34 PTH451 XMF S3 POT21
Text: Alphabetic Product Name Index A Acceleration S e n s o rs . AC Line F ilters . Active F ilters. Adjustm ent P otentiom eters. A n te n n a s .
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2sa1692
Abstract: BMA150 2SC3807
Text: SAf/YO LARGE-POWER T 0 1 2 6 L P TRANSISTORS F e a t u r e s •ft No ☆ C o n v e n t i o n a l t y p e : 1 0 W ( T c = 25"C ) , T 0 - 1 2 6 L P : 2 0 W ( T c - 2 5 “ C ) Facilitates h i g h -density mounting. ☆ Replaceable screw hole makes for T0-220
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T0-220
2SC3784
2SC3785
2SC3786
T0-126LP
O-126
MT940620TR
2sa1692
BMA150
2SC3807
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H22B1
Abstract: H22B2 H22B3 SLOTTED OPTICAL SWITCH darlington st134 a1l75
Text: £ BPTOELECTBDHiCS SLOTTED OPTICAL SWITCH H22B1/2/3 PACKAGE DIMENSIONS —*| fai I— l_ L </>b 3 I bi S E C T IO N X - X LEAD PR O FILE SYMBOL MflUMETERS MIN, MAX. 10.7 A 11.0 3.2 3.0 A, .600 4>b .750 .50 NOM. bi 11.6 12.0 Dì 3.0 3.3 D, 6.9 7.5 fit e2 2,3
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H22B1/2/3
ST1340-01
50NOM.
ST1193
ST1196
ST1195
H22B1
H22B2
H22B3
SLOTTED OPTICAL SWITCH darlington
st134
a1l75
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GE H21A1
Abstract: 4BE4
Text: Optointerrupter Specifications _ _ H21A1, H21A2, H21A3 Optointerrupter GaAs Infrared Emitting Diode and NPN Silicon Phototrans stor Module with 1mm Aperture T h e H 2 1 A I n t e r r u p t e r M o d u l e is a g a l l i u m a r s e n i d e i n f r a r e d
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H21A1,
H21A2,
H21A3
GE H21A1
4BE4
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BDV64C
Abstract: BDV64B B0V64B 8DV64B
Text: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK • • JU NE 1993 - R E V IS E D M A R C H 1997 Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C SOT-93 P A C KA G E TOP VIEW
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BDV64,
BDV64A,
BDV64B,
BDV64C
BDV65,
BDV65A,
BDV65B
BDV65C
OT-93
BDV64
BDV64B
B0V64B
8DV64B
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Super-247 Package
Abstract: IRG4PSC71UD
Text: International IÖR Rectifier PD - 91682A IRG4PSC71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than
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Super-247
O-247
1682A
IRG4PSC71UD
--600V
Liguria49,
Super-247 Package
IRG4PSC71UD
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tda1062
Abstract: vogt inductors C7V5PH vogt spulen VOGT U3 vogt mo inductors vogt ende kaschke bobbins ATIC 107
Text: TDA1062 Monolithisch Integrierte Schaltung Monolithic integrated Circuit Anwendung: UKW -Eingangsteile fü r Netz- und Autoradios, Mischer, M odulatoren und phasenem pfindliche G le ich richte r bis ca. 200 MHz. Application: FM-Tuner fo r AC-line and car-radios, mixer, m odulator and
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TDA1062
tda1062
vogt inductors
C7V5PH
vogt spulen
VOGT U3
vogt mo inductors
vogt
ende
kaschke bobbins
ATIC 107
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2SK831
Abstract: No abstract text available
Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK831 DESCRIPTION The 2SK831 is N-channel MOS Field E ffe ct Power Transistor PACKAGE D IM E N SIO N S designed fo r switching power supplies, DC-DC converter. FEATURES in m illim e te rs inches
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2SK831
2SK831
1987M
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM50E2Y/E3Y-H MEDIUM POWER SWITCHING USE INSULATED TYPE ! Q M 50E2Y/E3Y-H • lc • • • • Collector current. 50A VCEX Collector-emitter voltage.600V hFE DC current gain. 75
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QM50E2Y/E3Y-H
50E2Y/E3Y-H
E80276
E80271
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