s31 schottky diode
Abstract: 1SS357
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode 1SS357 Schottky Diodes FEATURES z z Small Package Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits
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OD-323
1SS357
100mA
s31 schottky diode
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode 1SS357 Schottky Diodes SOD-323 + FEATURES z Small Package z Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol
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OD-323
1SS357
OD-323
100mA
ISS357
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode 1SS357 Diodes SOD-323 + FEATURES z Small Package z Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits
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OD-323
1SS357
OD-323
100mA
ISS357
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode 1SS357 Schottky Diodes SOD-323 FEATURES z Small Package z Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol
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OD-323
1SS357
OD-323
100mA
ISS357
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schottky 1ss357
Abstract: sod323 marking NO s31 schottky diode
Text: 1SS357 Surface Mounting Schottky Diode SOD-323 Features Small Surface Mounting Type: SOD-323 Low VF。 Low IR Applications Surface mount schottky diode Dimensions in inches and millimeters Ordering Information Type No. Marking 1SS357 S31 MAXIMUM RATING @ Ta=25℃
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1SS357
OD-323
OD-323
1SS357
100mA
schottky 1ss357
sod323 marking NO
s31 schottky diode
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s31 schottky diode
Abstract: SOD323 Package footprint marking A SOD323 diode SOD-323 BL GALAXY diode SOD-323 1SS357 SOD-323 sod323 MARKING TA SOD323 DIODE DIODE SCHOTTKY SOD-323 schottky 1ss357
Text: BL Galaxy Electrical Production specification Surface mounting schottky Diode 1SS357 FEATURES z Pb Small Surface Mounting Type: Lead-free SOD-323 z Low VF。 z Low IR APPLICATIONS z Surface mount schottky diode SOD-323 ORDERING INFORMATION Type No. Marking
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1SS357
OD-323
BL/SSSKB004
s31 schottky diode
SOD323 Package footprint
marking A SOD323
diode SOD-323 BL GALAXY
diode SOD-323
1SS357 SOD-323
sod323
MARKING TA SOD323 DIODE
DIODE SCHOTTKY SOD-323
schottky 1ss357
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SUM60N04-05T
Abstract: 31866
Text: SUM60N04-05T Vishay Siliconix New Product N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.0054 @ VGS = 10 V 60a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature
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SUM60N04-05T
s-31866--Rev.
15-Sep-03
SUM60N04-05T
31866
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SUM60N04-05T
Abstract: D2Pak-5
Text: SUM60N04-05T Vishay Siliconix New Product N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.0054 @ VGS = 10 V 60a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature
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SUM60N04-05T
08-Apr-05
SUM60N04-05T
D2Pak-5
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Si4830DY
Abstract: Si4830DY-T1
Text: Si4830DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A
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Si4830DY
Si4830DY-T1
S-31989--Rev.
13-Oct-03
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Untitled
Abstract: No abstract text available
Text: Si4830DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A
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Si4830DY
Si4830DY-T1
S-31062--Rev.
26-May-06
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MOSFET50
Abstract: Si4832DY Si4832DY-T1
Text: Si4832DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.018 @ VGS = 10 V 9 0.028 @ VGS = 4.5 V 7.3 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A
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Si4832DY
Si4832DY-T1
18-Jul-08
MOSFET50
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MOS_FET 2100
Abstract: mosfet with schottky body diode Si4810DY Si4810DY-T1
Text: Si4810DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A
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Si4810DY
Si4810DY-T1
S-31062--Rev.
26-May-03
MOS_FET 2100
mosfet with schottky body diode
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A1218
Abstract: SI4834DY Si4834DY-T1
Text: Si4834DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A
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Si4834DY
Si4834DY-T1
18-Jul-08
A1218
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Untitled
Abstract: No abstract text available
Text: Si4834DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A
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Si4834DY
Si4834DY-T1
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4832DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.018 @ VGS = 10 V 9 0.028 @ VGS = 4.5 V 7.3 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A
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Si4832DY
Si4832DY-T1
08-Apr-05
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Si4832DY
Abstract: Si4832DY-T1
Text: Si4832DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.018 @ VGS = 10 V 9 0.028 @ VGS = 4.5 V 7.3 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A
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Si4832DY
Si4832DY-T1
S-31062--Rev.
26-May-03
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Si4834DY
Abstract: Si4834DY-T1
Text: Si4834DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A
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Si4834DY
Si4834DY-T1
S-31062--Rev.
26-May-03
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Si4830DY
Abstract: Si4830DY-T1
Text: Si4830DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A
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Si4830DY
Si4830DY-T1
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si4830DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A
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Si4830DY
Si4830DY-T1
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4810DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A
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Si4810DY
Si4810DY-T1
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4852DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (W) ID (A) 0.0120 @ VGS = 10 V 11 0.0175 @ VGS = 4.5 V 9.5 D LITTLE FOOT Plust D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage
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Si4852DY
Si4852DY-T1
S-31726--Rev.
18-Aug-03
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Si4852DY
Abstract: Si4852DY-T1 diode 0416
Text: Si4852DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0120 @ VGS = 10 V 11 0.0175 @ VGS = 4.5 V 9.5 FEATURES D LITTLE FOOTr Plus D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage
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Si4852DY
Si4852DY-T1
S-31726--Rev.
18-Aug-03
diode 0416
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Untitled
Abstract: No abstract text available
Text: bbSB'Ol D0242S4 250 « A P X N AMER PHILIPS/DISCRETE BAS32L b7E D J V HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32L is a planar epitaxial high-speed diode designed for fast logic applications. This SM diode is a leadless diode in a hermetically sealed SOD-80C glass envelope with tin-plated
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D0242S4
BAS32L
BAS32L
OD-80C
100X1
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f 32057
Abstract: T Y 41357
Text: TI/A-COn SEflICONDiBRLNGTON MAE D 51=45214 0DD117S 0 • MIC GMIC Switches M A T S I-ll MA4MG201 and MA4MG202 PIN Diode SPOT Switch Chips with Integrated Bias Network Features Usable Frequency Range: 2-21 GHz MA4MG201 4-21 GHz (MA4MG202) Bias Circuit and PIN Diode
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0DD117S
MA4MG201
MA4MG202
MA4MG201)
MA4MG202)
f 32057
T Y 41357
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