Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE S2145 Search Results

    DIODE S2145 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE S2145 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si6968EDQ-REVA

    Abstract: No abstract text available
    Text: Si6968EDQ-REVA Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3000 V PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.022 @ VGS = 4.5 V 6.5 0.030 @ VGS = 2.5 V 5.5


    Original     		Si6968EDQ-REVA S-21454--Rev. 19-Aug-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package


    Original     		Si1557DH SC-70 OT-363 SC-70 S-21453--Rev. 19-Aug-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si6968EDQ-REVA Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3000 V PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.022 @ VGS = 4.5 V 6.5 0.030 @ VGS = 2.5 V 5.5


    Original     		Si6968EDQ-REVA 08-Apr-05 PDF

    Si6968EDQ-REVA

    Abstract: No abstract text available
    Text: Si6968EDQ-REVA Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3000 V PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.022 @ VGS = 4.5 V 6.5 0.030 @ VGS = 2.5 V 5.5


    Original     		Si6968EDQ-REVA 18-Jul-08 PDF

    DG412L

    Abstract: dg412ldy DG411L DG411LDY DG413L 21452 412L DG413LDQ
    Text: DG411L/412L/413L Vishay Siliconix Precision Monolithic Quad SPST Low-Voltage CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D 2.7- thru 12-V Single Supply or "3- thru "6-Dual Supply D On-Resistance—r DS on : 17 W D Fast Switching—tON: 19 ns —tOFF: 12 ns


    Original     		DG411L/412L/413L 000-V DG411L/412L/413L HP4192A S-21452--Rev. 26-Aug-02 DG412L dg412ldy DG411L DG411LDY DG413L 21452 412L DG413LDQ PDF