sfp transceiver
Abstract: No abstract text available
Text: PT6-S1-4103L www.palconnusa.com Description The PT6-S1-4103L of Small Form Factor Pluggable SFP transceiver module is specifically designed for high performance integrated duplex data link over single mode optical fiber. The high-speed laser diode and photo diode are provided as a light
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PT6-S1-4103L
PT6-S1-4103L
EN60825,
EN60950.
10kohms
July-18-11
sfp transceiver
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sfp transceiver
Abstract: No abstract text available
Text: PT1-S1-4203L www.palconnusa.com Product Overview The PT1-S1-4203L of Small Form Factor Pluggable SFP transceiver module is specifically designed for high performance integrated duplex data link over single mode optical fiber. The high-speed laser diode and photo diode are provided as a light
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PT1-S1-4203L
PT1-S1-4203L
EN60825,
EN60950.
1310nm
10kohms
July-20-11
sfp transceiver
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APT0502
Abstract: APT0601 APTM120A20SG
Text: APTM120A20SG Phase leg Series & parallel diodes MOSFET Power Module G1 OUT S1 Q2 G2 0/VBUS S2 G1 VBUS 0/VBUS OUT S1 S2 G2 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated
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APTM120A20SG
APTM120A20SG
APT0502
APT0601
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diode 1000v 50a
Abstract: No abstract text available
Text: APTM120A20S Phase leg Series & parallel diodes MOSFET Power Module G1 OUT S1 Q2 G2 0/VBUS S2 G1 VBUS 0/VBUS OUT S1 S2 G2 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated
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APTM120A20S
APTM120A20S
diode 1000v 50a
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MARKING S1
Abstract: SDS511Q
Text: SDS511Q Semiconductor Switching Diode Features • • • • Ultra high speed switching application Low forward voltage Fast reverse recovery time Small total capacitance Ordering Information Type No. Marking SDS511Q Package Code S1 SOD-523 Outline Dimensions
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SDS511Q
OD-523
KSD-E001-001
100mA
MARKING S1
SDS511Q
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S1 SOD-323
Abstract: SDS511 ultra fast 80V 100ma SOD323
Text: SDS511 Semiconductor Switching Diode Features • • • • Ultra high speed switching application Low forward voltage Fast reverse recovery time Small total capacitance Ordering Information Type No. SDS511 Marking Package Code S1 SOD-323 unit : mm 1.25±0.1
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SDS511
OD-323
KSD-C001-000
100mA
S1 SOD-323
SDS511
ultra fast 80V 100ma SOD323
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Untitled
Abstract: No abstract text available
Text: APTC80AM75SCG Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module OUT Features • - S1 Q2 G2 S2 0/VBUS Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF
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APTC80AM75SCG
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BBY31
Abstract: No abstract text available
Text: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE BBY31 ISSUE 4 – JANUARY 1998 PIN CONFIGURATION 1 2 1 PARTMARKING DETAIL BBY31 – S1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at T amb=25°C P tot Operating and Storage Temperature Range
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BBY31
V/25V,
470MHz
BBY31
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BBY31
Abstract: No abstract text available
Text: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE BBY31 . SSUE 3 -FEBRUARY 1996 PIN CONFIGURATION • I _L X T PARTMARKING DETAIL BBY31-S1 1 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at Tamt^25°C P,o, Tj’Tstg Operating and Storage Temperature Range
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BBY31
BBY31-S1
V/25V,
ci7D57fl
470MHz
BBY31
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Untitled
Abstract: No abstract text available
Text: SPST SWITCHES Advanced c o n tro l C o m m o n «« The S1 series of single pole, single throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of
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10MHz
18GHz
L-STD-202F,
MIL-STD-202F,
M105C,
26GHz
MIL-STD-883
/-12V,
/-15V
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Untitled
Abstract: No abstract text available
Text: STANDARD SPST SWITCHES The S1 series of single pole, single throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible
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10MHz
18GHz
26GHz
/-12V,
/-15V
S1-0205
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Untitled
Abstract: No abstract text available
Text: SINGLE-POLE, SINGLE-THROW SWITCHES The S1 series of single pole, single throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible
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10MHz
18GHz
/-12V
-12-RC"
MIL-C-22750
26GHz
S1-1209
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Untitled
Abstract: No abstract text available
Text: SPST SWITCHES Advanced Control Components The S1 series of single pole, single throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible
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10MHz
18GHz
MIL-STD-883
MIL-STD-202F,
M105C,
26GHz
/-12V,
/-15V
S1-0210A
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S1H3
Abstract: M103 M105 S1X2
Text: SINGLE-POLE, SINGLE-THROW SWITCHES The S1 series of single pole, single throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible
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10MHz
18GHz
/-12V
-12-RC"
MIL-C-22750
26GHz
S1-0109
S1H3
M103
M105
S1X2
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Untitled
Abstract: No abstract text available
Text: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE BBY31 ISSUE 3 - FEBRUARY 1996 Hr PIN CO N FIG U R A TIO N 1 Z P A R TM A R KIN G D ETA IL B B Y 3 1 - S1 1 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SYM B O L Power D issipation at T amb=25°C P,o, Operating and Storage Tem perature Range
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BBY31
V/25V,
470MHz
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MIL-STD-12
Abstract: 1N4500 Krypton-85
Text: MI l - S - I 9 5 0 0 /U 0 3 USAF B J u l y I9 6 8 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPE 1N 4500 and TX1N4500 1. SCOPE 1 S1 S c o p e » T h is s p e c i f i c a t i o n c o v e r s t h e d e t a i l r e q u ir e m e n ts f o r s i l i c o n ,
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MIL-S-195CO/U03
1N4500
TX1N4500
MIL-S-19500
MIL-STD-12
Krypton-85
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s2dg1
Abstract: No abstract text available
Text: CEG8304 Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -3.6A, RDS ON = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability.
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CEG8304
s2dg1
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Diode smd s6 68
Abstract: S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77
Text: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions
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GWM100-0085X1
IF110
ID110
A0-0085X1
100-085X1-SL
100-085X1-SMD
100-0085X1
100-0085X1
Diode smd s6 68
S4 42 DIODE
smd diode g6 DIODE S4 39 smd diode
DIODE marking S6 77
smd diode g6
smd diode S6
Diode smd s6 68 g1
S3 marking DIODE
smd diode code 03a
smd diode marking 77
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S4 42 DIODE
Abstract: smd diode S6 smd diode code g3 DIODE marking S6 77 smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode code g2 SMD SL DIODE S4 37
Text: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions
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GWM100-0085X1
ID110
IF110
100-0085X1
100-0085X1-SMD
100-0085X1
S4 42 DIODE
smd diode S6
smd diode code g3
DIODE marking S6 77
smd diode g6 DIODE S4 39 smd diode
smd diode code g4
smd diode code g2
SMD SL
DIODE S4 37
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S4 42 DIODE
Abstract: smd diode g6 DIODE S4 39 smd diode smd diode S4 28 DIODE S4 37
Text: GWM100-0085X1 VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions
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GWM100-0085X1
IF110
ID110
100-0085X1-SMD
100-0085X1
100-0085X1
S4 42 DIODE
smd diode g6 DIODE S4 39 smd diode
smd diode S4 28
DIODE S4 37
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SKiiP 83 AC 12 i t 1
Abstract: SKiiP 83 AC 12 i t semikron skiip 83 83AC12 SKiiP 83 AC 12 SKIIP 83 AC 12 T 12 SKiiP 83 AC 12 i t 2 SKiiP 82 AC 12 i t 1 ct3 "current sensor" SKIIP
Text: SKiiP 83 AC 12 - SKiiP 83 AC 12 I Absolute Maximum Ratings Symbol VCES VGES IC ICM Tj Tstg Visol Conditions 1 Values 1200 ± 20 125 / 85 250 / 170 – 40 . . . + 150 – 40 . . . + 125 2500 Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C AC, 1 min.
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JESD22
Abstract: STG6684 STG6684QTR
Text: STG6684 High isolation dual SPDT analog switch Features • Ultra high off-isolation: -80 dB typ at 1 Mhz ■ Ultra low power dissipation: ICC = 0.2 A (max.) at TA = 85 °C ■ RPEAK on Tn = 1.30 Ω max (TA = 25 °C) at VCC = 4.3 V ■ RPEAK on Sn = 0.55 Ω max (TA = 25 °C)
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STG6684
JESD22
000-V
A114-A)
QFN10L
JESD22
STG6684
STG6684QTR
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Untitled
Abstract: No abstract text available
Text: STG4160 Low voltage 0.5 Ω single SPDT switch with break-before-make feature and 15 kV contact ESD protection Features • Wide operating voltage range: VCC opr = 1.65 to 4.8 V ■ Low power dissipation: ICC = 0.2 µA (max.) at TA = 85 °C ■ Low "ON" resistance:
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STG4160
100mA
IEC-61000-4-2
JESD22
A114-B
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ID40A
Abstract: No abstract text available
Text: MOSFET 85A 450~500 V PD10M441H PD10M440H P2H10M441H P2H10M440H •回路図 CIRCUIT PD P2H Rg Rg MOS SBD FRD 1 D2S1 2 SBD D1 MOS G2 S2 MOS SBD 3 S2 FRD FRD S1 S2 D1 SBD MOS D2 FRD S1 G1 G2 S2 S1 G1 Rg Rg ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm）
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PD10M441H
PD10M440H
P2H10M441H
P2H10M440H
PD10M441H440H
P2H10M441H440H
Weight220g
Duty50
PD10M441H/P2H10M441H
ID40A
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