RURG3060
Abstract: No abstract text available
Text: RURG3060 Data Sheet January 2002 30A, 600V Ultrafast Diode Features The RURG3060 is an ultrafast diode with soft recovery characteristics trr < 55ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction.
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RURG3060
RURG3060
175oC
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RURU75120
Abstract: No abstract text available
Text: RURU75120 Data Sheet January 2002 75A, 1200V Ultrafast Diode Features The RURU75120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction.
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RURU75120
RURU75120
125ns)
125ns
175oC
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RURP30120
Abstract: RUR30120
Text: RURP30120 Data Sheet January 2002 30A, 1200V Ultrafast Diode Features The RURP30120 is an ultrafast diode with soft recovery characteristic trr < 110ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction.
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RURP30120
RURP30120
110ns)
110ns
175oC
RUR30120
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RURG30120
Abstract: No abstract text available
Text: RURG30120 Data Sheet January 2002 30A, 1200V Ultrafast Diode Features The RURG30120 is an ultrafast diode with soft recovery characteristic trr < 110ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction.
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RURG30120
RURG30120
110ns)
110ns
175oC
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URU100120
Abstract: RURU100120 URU100
Text: RURU100120 Data Sheet January 2002 100A, 1200V Ultrafast Diode Features The RURU100120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction.
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RURU100120
RURU100120
125ns)
125ns
175oC
URU100120
URU100
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G8060
Abstract: ruru8060 RUR 0820 TB-01
Text: [ /Title RUR G8060 /Subject (80A, 600V Ultrafa st Diode) /Autho r () /Keywords (80A, 600V Ultrafa st Diode, Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power Switch ing Cir- RURU8060 Data Sheet October 2001 File Number
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G8060
RURU8060
RURU8060
G8060
RUR 0820
TB-01
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RURH15100CC
Abstract: URH15100C
Text: RURH15100CC Data Sheet January 2000 File Number 2934.3 15A, 1000V Ultrafast Dual Diode Features The RURH15100CC is an ultrafast dual diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated
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RURH15100CC
RURH15100CC
100ns)
100ns
URH15100C
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URU100120
Abstract: RURU100120
Text: RURU100120 Data Sheet January 2000 File Number 3545.3 100A, 1200V Ultrafast Diode Features The RURU100120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial
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RURU100120
RURU100120
125ns)
125ns
URU100120
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RURU50100
Abstract: No abstract text available
Text: RURU50100 Data Sheet January 2002 50A, 1000V Ultrafast Diode Features The RURU50100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURU50100
RURU50100
125ns)
125ns
175oC
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Untitled
Abstract: No abstract text available
Text: RURG80100 Data Sheet January 2002 80A, 1000V Ultrafast Diode Features The RURG80100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURG80100
RURG80100
125ns)
125ns
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RURG8060
Abstract: TO247 package dissipation
Text: RURG8060 Data Sheet January 2002 80A, 600V Ultrafast Diode Features The RURG8060 is an ultrafast diode with soft recovery characteristics trr < 75ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURG8060
RURG8060
175oC
TO247 package dissipation
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RURG75120
Abstract: No abstract text available
Text: RURG75120 Data Sheet January 2002 75A, 1200V Ultrafast Diode Features The RURG75120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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Original
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RURG75120
RURG75120
125ns)
125ns
175oC
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RURU10060
Abstract: No abstract text available
Text: RURU10060 Data Sheet January 2002 100A, 600V Ultrafast Diode Features The RURU10060 is an ultrafast diode with soft recovery characteristics trr < 80ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURU10060
RURU10060
175oC
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RURG3020
Abstract: TA09645
Text: RURG3020 Data Sheet January 2002 30A, 200V Ultrafast Diode Features The RURG3020 is an ultrafast diode with soft recovery characteristics trr < 45ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURG3020
RURG3020
175oC
TA09645
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RURG80100
Abstract: No abstract text available
Text: RURG80100 Data Sheet January 2002 80A, 1000V Ultrafast Diode Features The RURG80100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURG80100
RURG80100
125ns)
125ns
175oC
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RURG30120
Abstract: TA49031
Text: RURG30120 Data Sheet January 2000 File Number 3399.3 30A, 1200V Ultrafast Diode Features The RURG30120 is an ultrafast diode with soft recovery characteristic trr < 110ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial
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RURG30120
RURG30120
110ns)
110ns
TA49031
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RURU8060
Abstract: No abstract text available
Text: RURU8060 Data Sheet January 2002 80A, 600V Ultrafast Diode Features The RURU8060 is an ultrafast diode with soft recovery characteristics trr < 75ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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Original
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RURU8060
RURU8060
175oC
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RURU75120
Abstract: No abstract text available
Text: RURU75120 Data Sheet January 2000 File Number 3413.3 75A, 1200V Ultrafast Diode Features The RURU75120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial
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RURU75120
RURU75120
125ns)
125ns
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RUR30100
Abstract: rur30100 Diode RURP30100
Text: RURP30100 Data Sheet January 2002 30A, 1000V Ultrafast Diode Features The RURP30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has a low forward voltage drop and is of silicon nitride passivated, ion-implanted, epitaxial construction.
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RURP30100
RURP30100
110ns)
110ns
175oC
RUR30100
rur30100 Diode
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RURU50120
Abstract: TA49099
Text: RURU50120 Data Sheet January 2002 50A, 1200V Ultrafast Diode Features The RURU50120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURU50120
RURU50120
125ns)
125ns
175oC
TA49099
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RURU150120
Abstract: No abstract text available
Text: RURU150120 Data Sheet January 2002 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURU150120
RURU150120
200ns)
200ns
175oC
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TA09909
Abstract: RURG5060 TB2060
Text: RURG5060 Data Sheet January 2002 50A, 600V Ultrafast Diode Features The RURG5060 is an ultrafast diode with soft recovery characteristics trr < 65ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURG5060
RURG5060
175oC
TA09909
TB2060
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RURU75120
Abstract: No abstract text available
Text: RURU75120 Data Sheet January 2000 File Number 3413.3 75A, 1200V Ultrafast Diode Features The RURU75120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial
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Original
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RURU75120
RURU75120
125ns)
125ns
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PDF
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RURG30100
Abstract: No abstract text available
Text: RURG30100 Data Sheet January 2002 30A, 1000V Ultrafast Diode Features The RURG30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURG30100
RURG30100
110ns)
110ns
175oC
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PDF
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