FDS010
Abstract: FDS100 circuit PDA155 FGA10 PDA255 FDS100 THORLABS FGA10 Photodiode 1550nm bandwidth PDA400 PDA55
Text: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 PH. 973-579-7227 FAX 973-300-3600 FGA10 InGaAs Photodiode -High Responsivity -Low Capacitance: High Speed Electrical Characteristics Spectral Response: Active Diameter: Rise/Fall Time RL=50Ω : Bandwidth (RL=50Ω, -3dB,5V):
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FGA10
1550nm:
800-1800nm*
100nA
100mW
35/fBW
FDS010,
FDS100,
PDA55,
FDS010
FDS100 circuit
PDA155
PDA255
FDS100
THORLABS FGA10
Photodiode 1550nm bandwidth
PDA400
PDA55
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FDS1010
Abstract: FDS010 PDA155 Thorlabs FDS100 circuit FDS100 FDS100 RlOAD THORLABS PHOTODIODE PDA255 PDA400
Text: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 Ph. 973-579-7227 FAX 973-300-3600 FDS1010 Si Photodiode -Large Active Area -Low Capacitance Electrical Characteristics Spectral Response: Active Area: Rise/Fall Time RL=50Ω : Bandwidth (RL=50Ω, -3dB,5V):
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FDS1010
900nm:
400-1100nm
600nA
375pF
35/fBW
FDS010,
FDS100,
PDA55,
FDS010
PDA155
Thorlabs
FDS100 circuit
FDS100
FDS100 RlOAD
THORLABS PHOTODIODE
PDA255
PDA400
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D400F
Abstract: D400FC FGA04 FGA10 photodiode responsivity 1550nm with FC connector photodiode responsivity 1550nm 2 Photodiode 1550nm bandwidth Photodiode, 1550nm NEP THORLABS FGA10 1550nm photodiode 2GHz
Text: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 PH. 973-579-7227 FAX 973-300-3600 FGA04 InGaAs Photodiode High Responsivity Low Capacitance: High Speed Fiber Compatible with FC Connector Electrical Characteristics Spectral Response: Active Diameter: Rise/Fall Time RL=50Ω :
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FGA04
1550nm:
800-1700nm
35/fBW
3154-S01
D400FC,
FGA10,
FGA04
D400F
D400FC
FGA10
photodiode responsivity 1550nm with FC connector
photodiode responsivity 1550nm 2
Photodiode 1550nm bandwidth
Photodiode, 1550nm NEP
THORLABS FGA10
1550nm photodiode 2GHz
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Untitled
Abstract: No abstract text available
Text: Surface Mount PIN Diode SP2T Switches MSW2060-206, MSW2061-206 & MSW2062-206 Series Datasheet Features • Surface Mount SP2T Switch in Compact Outline: 8mm L x 5mm W x 2.5 mm H • Higher Average Power Handling than Plastic 100 W C.W. • Higher Voltage > 500 Volts for Higher RF Peak Power (500 W)
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MSW2060-206,
MSW2061-206
MSW2062-206
-180V
MSW2061-206,
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MSW2061-206
Abstract: MSW2060 MSW2060-206-E
Text: Surface Mount PIN Diode SP2T Switches MSW2060-206, MSW2061-206 & MSW2062-206 Series Datasheet Features • Surface Mount SP2T Switch in Compact Outline: 8mm L x 5mm W x 2.5 mm H • Higher Average Power Handling than Plastic 100 W C.W. • Higher Voltage > 500 Volts for Higher RF Peak Power (500 W)
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MSW2060-206,
MSW2061-206
MSW2062-206
-180V
MSW2061-206,
MSW2061-206
MSW2060
MSW2060-206-E
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FGA10
Abstract: THORLABS FGA10 InGaAs photodiode spectral response InGaAs photodiode photodiode bias circuit C1012 1800nm Thorlabs PHOTODIODE FGA10 photodiode InGaAs NEP
Text: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 Ph. 973-579-7227 FAX 973-300-3600 FGA10 InGaAs Photodiode High Speed The FGA10 is a high-speed InGaAs photodiode with a spectral response from 700nm to 1800nm. This photodiode has a PIN structure that provides fast rise and fall times with a bias of 5V.
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FGA10
700nm
1800nm.
900nm:
700-1800nm
100nA
35/fBW
2234-S01
THORLABS FGA10
InGaAs photodiode spectral response
InGaAs photodiode
photodiode bias circuit
C1012
1800nm
Thorlabs
PHOTODIODE FGA10
photodiode InGaAs NEP
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D400F
Abstract: D400FC photodiode ge FGA10 FGA03PT THORLABS FGA10 PDA255 PDA400 Ge detector Thorlabs
Text: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 Ph. 973-579-7227 FAX 973-300-3600 FDG05 Ge Photodiode -Large Active Area -Low Capacitance 0.010 Electrical Characteristics Spectral Response: Active Diameter: Rise/Fall Time RL=50Ω : Cut Off Frequency (50Ω, 3V):
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FDG05
980nm:
800-1800nm
220ns
3000pF
30AWG
FGA10,
FGA03PT,
FGA03PT/FC,
D400FC,
D400F
D400FC
photodiode ge
FGA10
FGA03PT
THORLABS FGA10
PDA255
PDA400
Ge detector
Thorlabs
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153 tss
Abstract: R1243S001-E2-FE GRM32EB31C476KE GRM32EB31C476K r1243
Text: R1243x SERIES 30V Input 2A Buck DC/DC Converter NO.EA-206-100512 OUTLINE The R1243x Series is the CMOS-based Step-Down DC/DC Converter with internal Nch high side Tr. 0.175Ω , which can provide the maximum 2A output current. The IC consists of an Oscillator, a PWM control circuit, a
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R1243x
EA-206-100512
Room403,
Room109,
153 tss
R1243S001-E2-FE
GRM32EB31C476KE
GRM32EB31C476K
r1243
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R1243S001-E2-FE
Abstract: No abstract text available
Text: R1243x SERIES 30V Input 2A Buck DC/DC Converter NO.EA-206-100928 OUTLINE The R1243x Series is the CMOS-based Step-Down DC/DC Converter with internal Nch high side Tr. 0.175Ω , which can provide the maximum 2A output current. The IC consists of an Oscillator, a PWM control circuit, a
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R1243x
EA-206-100928
Room403,
Room109,
R1243S001-E2-FE
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R1243S001-E2-FE
Abstract: GRM32EB31C476KE R1243 NR6045T100M NR6028T GRM31CR71E106K UMK325BJ106MM-T grm32eb31c476ke15 R1243K001-TR
Text: R1243x SERIES 30V Input 2A Buck DC/DC Converter NO.EA-206-110406 OUTLINE The R1243x Series is the CMOS-based Step-Down DC/DC Converter with internal Nch high side Tr. 0.175Ω , which can provide the maximum 2A output current. The IC consists of an Oscillator, a PWM control circuit, a
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R1243x
EA-206-110406
Room403,
Room109,
10F-1,
R1243S001-E2-FE
GRM32EB31C476KE
R1243
NR6045T100M
NR6028T
GRM31CR71E106K
UMK325BJ106MM-T
grm32eb31c476ke15
R1243K001-TR
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Untitled
Abstract: No abstract text available
Text: R1 2 4 3 x SERI ES 30V Input 2A Buck DC/DC Converter NO.EA-206-111123 OUTLINE The R1243x Series is the CMOS-based Step-Down DC/DC Converter with internal Nch high side Tr. 0.175Ω , which can provide the maximum 2A output current. The IC consists of an Oscillator, a PWM control circuit, a
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EA-206-111123
R1243x
Room403,
Room109,
10F-1,
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SDB3101F
Abstract: ksd2065
Text: SDB3101F Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. SDB3101F Marking Package Code DB1 SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC KSD-2065-000
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SDB3101F
OT-23F
KSD-2065-000
SDB3101F
ksd2065
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PD-2062
Abstract: 2062
Text: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-2062 1. Scope : This specification applies to NIP silicon photodiode chips, Device No. PD-2062 2. Structure : 2-1. Planar type : NIP diode. 2-2. Electrodes : Top side Cathode : Aluminum alloy. Back side ( Anode ) : Gold alloy.
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PD-2062
038mm)
153mm×
voltag25
100uA
905nm
PD-2062
2062
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Untitled
Abstract: No abstract text available
Text: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-2065 1. Scope : This specification applies to NIP silicon photodiode chips, Device No. PD-2065 2. Structure : 2-1. Planar type : NIP diode. 2-2. Electrodes : Top side Cathode : Aluminum alloy . Back side ( Anode ) : Gold alloy.
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PD-2065
2870K
850nm
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DC 5V to DC 100V CIRCUIT DIAGRAM
Abstract: HV205 HV204 HV20420P HV20420PJ HV20420X HV20620PJ
Text: HV204/HV205/HV206 HV204/205/206 Low Charge Injection 8-Channel High Voltage Analog Switch Ordering Information Package Options VPP – VNN Die in waffle pack 28-pin plastic DIP 28-lead plastic chip carrier 200V 200V 200V HV20420X - HV20420P - HV20420PJ HV20520PJ
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HV204/HV205/HV206
HV204/205/206
28-pin
28-lead
HV20420X
HV20420P
HV20420PJ
HV20520PJ
HV20620PJ
HV206
DC 5V to DC 100V CIRCUIT DIAGRAM
HV205
HV204
HV20420P
HV20420PJ
HV20420X
HV20620PJ
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CODE 2A
Abstract: 6TPC100M CMSH5-20 DO3316P-222HC EEFUE0J151R MAX1708 MAX1708EEE MAX1709 MBRD1035CTL
Text: 19-2068; Rev 1; 11/10 High-Frequency, High-Power, Low-Noise, Step-Up DC-DC Converter Features ♦ On-Chip 5A Power MOSFET ♦ 5V, 2A Output from a 3.3V Input ♦ Fixed 3.3V or 5V Output Voltage or Adjustable 2.5V to 5.5V ♦ Input Voltage Range Down to 0.7V
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600kHz)
350kHz
1000kHz)
MAX1708EEE+
CODE 2A
6TPC100M
CMSH5-20
DO3316P-222HC
EEFUE0J151R
MAX1708
MAX1708EEE
MAX1709
MBRD1035CTL
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6TPC100M
Abstract: CMSH5-20 DO3316P-222HC EEFUE0J151R MAX1708 MAX1708EEE MAX1709 MBRD1035CTL
Text: 19-2068; Rev 0; 7/01 High-Frequency, High-Power, Low-Noise, Step-Up DC-DC Converter Features ♦ On-Chip 5A Power MOSFET ♦ 5V, 2A Output from a 3.3V Input ♦ Fixed 3.3V or 5V Output Voltage or Adjustable 2.5V to 5.5V ♦ Input Voltage Range Down to 0.7V
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600kHz)
350kHz
1000kHz)
MAX1708EEE
6TPC100M
CMSH5-20
DO3316P-222HC
EEFUE0J151R
MAX1708
MAX1708EEE
MAX1709
MBRD1035CTL
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Untitled
Abstract: No abstract text available
Text: 19-2068; Rev 1; 11/10 High-Frequency, High-Power, Low-Noise, Step-Up DC-DC Converter Features ♦ On-Chip 5A Power MOSFET ♦ 5V, 2A Output from a 3.3V Input ♦ Fixed 3.3V or 5V Output Voltage or Adjustable 2.5V to 5.5V ♦ Input Voltage Range Down to 0.7V
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600kHz)
350kHz
1000kHz)
MAX1708EEE+
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Untitled
Abstract: No abstract text available
Text: 19-2068; Rev 0; 7/01 High-Frequency, High-Power, Low-Noise, Step-Up DC-DC Converter Features ♦ On-Chip 5A Power MOSFET ♦ 5V, 2A Output from a 3.3V Input ♦ Fixed 3.3V or 5V Output Voltage or Adjustable 2.5V to 5.5V ♦ Input Voltage Range Down to 0.7V
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MAX1708
600kHz
MAX1708EVKIT
MAX1708
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HSCH-5318
Abstract: ROGERS DUROID
Text: Broadband Microstrip Mixer Design – The Butterfly Mixer Application Note 976 Introduction In Hewlett-Packard Application Note 963, Impedance Matching Techniques for Mixers and Detectors, a technique for designing broadband matching circuits was developed and illustrated with
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HSCH-5318
ROGERS DUROID
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HSCH-5318
Abstract: rt duroid 5082-2207 diode
Text: Broadband Microstrip Mixer Design – The Butterfly Mixer Application Note 976 Introduction In Agilent Technologies Application Note 963, Impedance Matching Techniques for Mixers and Detectors, a technique for designing broadband matching circuits was developed and illustrated with
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HSCH-5318
rt duroid
5082-2207 diode
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2SK1311
Abstract: K30 mosfet MOSFET K30 DD13t
Text: 2SK1311 2062 LD Low Drive Series V Oss = 6 0 V N Channel Power MOSFET 3 I5 3 A F e a tu re s - Low ON resistance. • Very high-speed switching. - Low-voltage drive. b so lu te M axim um R atin g s at Ta=25°C Drain to Source Voltage Vdss Gate to Source Voltage
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2SK1311
3I53A
250mm2
S-ID-IS-30-2s
DD13TE1
2SK1311
K30 mosfet
MOSFET K30
DD13t
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Untitled
Abstract: No abstract text available
Text: I l4flflb51D 0 0 0 0 2 ^ 0 û • ISO MSE D IS OC OM C O M P O N E N T S LTD IS 205X, IS 206X~ '•»t.ïSïS <¿5 ism oM OPTICALLY COUPLED ISOLATOR NON-BASE LEAD TRANSISTOR OUTPUT PACKAGE DIMENSIONS IN MM DESCRIPTION The IS205X, IS206X are optically coupled isolators
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4flflb51D
IS205X,
IS206X
IS206X
10mAf
VCE-10V
-100R,
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a950
Abstract: A950 O
Text: SIEMENS SFH 205 SFH 205Q2 SFH 206 SILICON PIN PHOTODIODE DAYLIGHT FILTER Package Dimensions in Inches mm 1.336(34) 1.258(32) .100 (2S4) ,-Cathode .024 (.6) 016,(4) ~T~ .145(4.1) ?1»1 (3.7) .161 (4.1 .145 (3.J * =¥ .031 (.8) .016 (.4) *071 (1.8) .047 (1.2)
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205Q2
205/SFH
205Q2/SI-H
a950
A950 O
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