E3P102
Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001 SCILLC, 2001 Previous Edition 1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.
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DL135/D
Apr-2001
r14525
DLD601
E3P102
T2-955V
e6n02
t9n10e
DL135
1086v
l1n06c
24 v DC relay 34.51.7
d3n03
20n06hl
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SSS10N60A
Abstract: mosfet 300V 10A datasheet
Text: SSS10N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 0.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V
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SSS10N60A
O-220F
SSS10N60A
mosfet 300V 10A datasheet
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gFE smd diode
Abstract: smd transistor 18E irg4zh70ud SMD-10 PACKAGE diode smd 312
Text: PD - 9.1627A IRG4ZH70UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features ● ● ● ● ● ● ● UltraFast IGBT optimized for high switching frequencies IGBT co-packaged with HEXFRED ultrafast, ultra-soft recovery antiparallel diodes for use in
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IRG4ZH70UD
SMD-10
gFE smd diode
smd transistor 18E
irg4zh70ud
SMD-10 PACKAGE
diode smd 312
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V23990-P444-C-PM
Abstract: No abstract text available
Text: data sheet version 02/03 V23990-P444-C-PM flow PIM 0+E, 600V Maximum Ratings / Höchstzulässige Werte Parameter Condition Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode
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V23990-P444-C-PM
D81359
V23990-P444-C-PM
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Untitled
Abstract: No abstract text available
Text: SK25GD126ET # , -. /0 Absolute Maximum Ratings Symbol Conditions IGBT 123 #4 , -. / % #4 , 6.7 / %:; 6-77 1 8- ' # , 97 / -8 ' .7 ' < -7 1 #4 , 6-. / 67 A # , -. / -9 ' # , 97 / 6B ' .7 ' %:;, - % IGBT Module
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SK25GD126ET
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Untitled
Abstract: No abstract text available
Text: SK15GD065ET # , -. /0 Absolute Maximum Ratings Symbol Conditions IGBT 123 #4 , -. / % #4 , 8-. / %;< 677 1 -7 ' # , 97 / 8: ' =7 ' > -7 1 #4 , 8-. / 87 B # , -. / - ' # , 97 / 8. ' =7 ' %;<, - % IGBT Module SK15GD065ET
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SK15GD065ET
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Untitled
Abstract: No abstract text available
Text: SK35GD126ET # , -. /0 Absolute Maximum Ratings Symbol Conditions IGBT 123 #4 , -. / % #4 , 6.7 / %;< 6-77 1 87 ' # , 97 / :- ' =7 ' > -7 1 #4 , 6-. / 67 C # , -. / :8 ' # , 97 / -: ' =7 ' %;<, - % IGBT Module
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SK35GD126ET
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SK35GD126ET
Abstract: No abstract text available
Text: SK35GD126ET # , -. /0 Absolute Maximum Ratings Symbol Conditions IGBT 123 #4 , -. / % #4 , 6.7 / %;< 6-77 1 87 ' # , 97 / :- ' =7 ' > -7 1 #4 , 6-. / 67 C # , -. / :8 ' # , 97 / -: ' =7 ' %;<, - % 1 , ?77 1@ 1&2 A -7 1@
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SK35GD126ET
SK35GD126ET
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SK25GD126ET
Abstract: No abstract text available
Text: SK25GD126ET # , -. /0 Absolute Maximum Ratings Symbol Conditions IGBT 123 #4 , -. / % #4 , 6.7 / %:; 6-77 1 8- ' # , 97 / -8 ' .7 ' < -7 1 #4 , 6-. / 67 A # , -. / -9 ' # , 97 / 6B ' .7 ' %:;, - % 1 , =77 1> 1&2 ? -7 1>
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SK25GD126ET
SK25GD126ET
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SK35GD126ET
Abstract: No abstract text available
Text: SK35GD126ET # , -. /0 Absolute Maximum Ratings Symbol Conditions IGBT 123 #4 , -. / % #4 , 6.7 / %;< 6-77 1 87 ' # , 97 / :- ' =7 ' > -7 1 #4 , 6-. / 67 C # , -. / :8 ' # , 97 / -: ' =7 ' %;<, - % 1 , ?77 1@ 1&2 A -7 1@
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SK35GD126ET
SK35GD126ET
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thermistor 140M
Abstract: diode t25 4 G5 APTM50H14FT3 140M Thermistor
Text: APTM50H14FT3 Full - Bridge MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies 13 14 Q1 Q3 18 11 22 7 19 10 23 Q2 8 Q4 26 4 27 3 30 29 32 31 15 16 R1 28 27 26 25 23 22 20 19 18 29 16 30
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APTM50H14FT3
thermistor 140M
diode t25 4 G5
APTM50H14FT3
140M Thermistor
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SK15GD065ET
Abstract: No abstract text available
Text: SK15GD065ET # , -. /0 Absolute Maximum Ratings Symbol Conditions IGBT 123 #4 , -. / % #4 , 8-. / %;< 677 1 -7 ' # , 97 / 8: ' =7 ' > -7 1 #4 , 8-. / 87 B # , -. / - ' # , 97 / 8. ' =7 ' %;<, - % 1 , =77 1? 1&2 @ -7 1?
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SK15GD065ET
SK15GD065ET
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SK25GD126ET
Abstract: No abstract text available
Text: SK25GD126ET # , -. /0 Absolute Maximum Ratings Symbol Conditions IGBT 123 #4 , -. / % #4 , 6.7 / %:; 6-77 1 8- ' # , 97 / -8 ' .7 ' < -7 1 #4 , 6-. / 67 A # , -. / -9 ' # , 97 / 6B ' .7 ' %:;, - % 1 , =77 1> 1&2 ? -7 1>
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SK25GD126ET
SK25GD126ET
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SK15GD065ET
Abstract: No abstract text available
Text: SK15GD065ET # , -. /0 Absolute Maximum Ratings Symbol Conditions IGBT 123 #4 , -. / % #4 , 8-. / %;< 677 1 -7 ' # , 97 / 8: ' =7 ' > -7 1 #4 , 8-. / 87 B # , -. / - ' # , 97 / 8. ' =7 ' %;<, - % 1 , =77 1? 1&2 @ -7 1?
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SK15GD065ET
SK15GD065ET
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Si4376DY
Abstract: No abstract text available
Text: SPICE Device Model Si4376DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4376DY
0-to-10V
07-Aug-02
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Untitled
Abstract: No abstract text available
Text: APTM50H14FT3G Full - Bridge MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies 13 14 Q1 Q3 18 11 22 Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge
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APTM50H14FT3G
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APT0406
Abstract: APT0502 APTM50H14FT3G 140M Thermistor
Text: APTM50H14FT3G Full - Bridge MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies 13 14 Q1 Q3 18 11 Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge
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APTM50H14FT3G
APT0406
APT0502
APTM50H14FT3G
140M Thermistor
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Si4376DY
Abstract: No abstract text available
Text: SPICE Device Model Si4376DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4376DY
S-52016Rev.
03-Oct-05
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Si3552DV
Abstract: Si3552DV-T1
Text: Si3552DV Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel 30 P Channel P-Channel - 30 rDS(on) (W) ID (A) 0.105 @ VGS = 10 V 2.5 0.175 @ VGS = 4.5 V 2.0 0.200 @ VGS = - 10 V - 1.8 0.360 @ VGS = - 4.5 V - 1.2 TSOP-6
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Si3552DV
Si3552DV-T1
18-Jul-08
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STP80N20M5
Abstract: 80N20M5 STB80N20M5 80N20 stb80n20
Text: STB80N20M5 STP80N20M5 N-channel 200 V, 0.019 Ω, 61 A, TO-220, D2PAK MDmesh V Power MOSFET Features Type STB80N20M5 STP80N20M5 VDSS @ TJmax RDS on max 200 V < 0.023 Ω ID 61 A 61 A 3 3 • Amongst the best RDS(on) * area ■ High dv/dt capability ■
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STB80N20M5
STP80N20M5
O-220,
O-220
STP80N20M5
80N20M5
STB80N20M5
80N20
stb80n20
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TRANSISTOR SMD 9bb
Abstract: TI 42A
Text: In te rn a tio n a l TOR Rectifier PD - 9.1627 IRG4ZH70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFRED ultrafast,
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OCR Scan
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PDF
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IRG4ZH70UD
SMD-10
TRANSISTOR SMD 9bb
TI 42A
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Untitled
Abstract: No abstract text available
Text: P D - 9.1627 International IO R Rectifier IRG4ZH70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFRED ultrafast,
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IRG4ZH70UD
SMD-10
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DIODE rg 709
Abstract: 250M SSS10N60A 74242 N-Channel 600V MOSFET
Text: SSS10N60A A dvanced Power MOSFET FEATURES BVdss - 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge Id = 5.1 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA(Max.) @ V DS = 600V
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SSS10N60A
O-220F
0040S0Ã
DIODE rg 709
250M
SSS10N60A
74242
N-Channel 600V MOSFET
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Untitled
Abstract: No abstract text available
Text: SSS10N60A Advanced Power MOSFET FEATURES II CO 0 .8 Q . Î •w Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 jaA M ax. @ VDS= 600V Low Rqs(on) . 0.646 Q (Typ.)
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SSS10N60A
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