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    DIODE RF 302 Search Results

    DIODE RF 302 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE RF 302 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    free transistor equivalent book 2sc

    Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


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    PDF X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002

    Untitled

    Abstract: No abstract text available
    Text: MPS-302201-87 100 to 3000 MHz Variable Gain Amplifier Email: info@mwtinc.com www.mwtinc.com Features High IP3 +35 dBm Typcal Variable Gain High P1dB +22 dBm Typical 30% High Power Added Efficiency +5 Volt Bias The MPS-302201-87 is an internally matched GaAs FET amplifier in a gold/


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    PDF MPS-302201-87 MPS-302201-87

    MA87937

    Abstract: 10 GHz gunn diode Gunn oscillator GaAs x band gunn diode
    Text: Varactor Controlled Oscillator 21.15 - 23.63 GHz MA87937 V3.00 Features ● ● ● ● ● ● 0.670 MOLEX 22-01-3027 0.335 Broadband Electronic Tuning Allows for Center Frequency Setting to Done Electronically, Alleviating the Need for “On Site” Mechanical Adjustments.


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    PDF MA87937 MA87937 10 GHz gunn diode Gunn oscillator GaAs x band gunn diode

    Untitled

    Abstract: No abstract text available
    Text: MPS-302201-87 100 to 3000 MHz Variable Gain Amplifier Email: info@mwtinc.com www.mwtinc.com Features High IP3 +35 dBm Typcal Variable Gain High P1dB +22 dBm Typical 30% High Power Added Efficiency +5 Volt Bias The MPS-302201-87 is an internally matched GaAs FET amplifier in a gold/


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    PDF MPS-302201-87 MPS-302201-87

    MPS-302201-87

    Abstract: variable capacitor MPS302
    Text: MPS-302201-87 100 to 3000 MHz Variable Gain Amplifier Email: info@mwtinc.com www.mwtinc.com Features High IP3 +35 dBm Typcal Variable Gain High P1dB +22 dBm Typical 30% High Power Added Efficiency +5 Volt Bias The MPS-302201-87 is an internally matched GaAs FET amplifier in a gold/


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    PDF MPS-302201-87 MPS-302201-87 variable capacitor MPS302

    AN302

    Abstract: IN4003 IN4003 diode Variable resistor 10K ohm
    Text: LSI/CSI UL AP P LI CATI ON NOTE 302 LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 631 271-0400 FAX (631) 271-0405 A3800 HEAVY DUTY AC POWER CONTROL WITH AUTOMATIC VARIABLE TIMED OPERATION AND OVERLOAD SHUTDOWN December 1996 A method is described herein for simple electronic control of large current inductive loads


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    PDF A3800 LS7339 LM311 IN4003 470pF AN302-121396-2 AN302 IN4003 IN4003 diode Variable resistor 10K ohm

    diode in4003

    Abstract: IN4003 IN4003 diode cmos ic 4001 cmos ic cd4001 data sheet CD4001 cmos ic cd4001 BE Variable resistor 10K ohm ic cd4001 datasheet cd4001 applications
    Text: LSI/CSI UL AP P LI CATI ON NOTE 302 LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 631 271-0400 FAX (631) 271-0405 A3800 HEAVY DUTY AC POWER CONTROL WITH AUTOMATIC VARIABLE TIMED OPERATION AND OVERLOAD SHUTDOWN December 1996 A method is described herein for simple electronic control of large current inductive loads


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    PDF A3800 LS7339 LM311 IN4003 470pF AN302-121396-2 diode in4003 IN4003 IN4003 diode cmos ic 4001 cmos ic cd4001 data sheet CD4001 cmos ic cd4001 BE Variable resistor 10K ohm ic cd4001 datasheet cd4001 applications

    diagram for test ic 8873

    Abstract: Stereo Power Amplifier Circuit Diagram LA4183
    Text: Ordering number: EN887B Monolithic Linear IC LA4183 2.3 W 2-Channel AF Power Amplifier for Radio Cassette Players Features Package Dimensions . Built-in 2 channels enabling use in stereo and bridge BTL applications. . amplifier High-output: 3022A-DIP12F


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    PDF EN887B LA4183 022A-DIP12F 26max DIP12F 12-pin diagram for test ic 8873 Stereo Power Amplifier Circuit Diagram LA4183

    LA1245

    Abstract: SVC332 C-4698 73711 tuner alps reference alps catalog transistor c114 diagrams ift coil for 1mhz application sumida ift coil fm tuner alps
    Text: Ordering number : EN737F Monolithic Linear IC LA1245 AM Electronic Tuner Overview Package Dimensions LA1245 is a high performance IC to be used as an AM unit : mm electronic tuner. It provides an automatic search-stop 3021B-DIP20S signal, local oscillator buffer-output, and the low level


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    PDF EN737F LA1245 LA1245 3021B-DIP20S LA1245] DIP20S SVC332 C-4698 73711 tuner alps reference alps catalog transistor c114 diagrams ift coil for 1mhz application sumida ift coil fm tuner alps

    Untitled

    Abstract: No abstract text available
    Text: BAV300 / 301 / 302 / 303 VISHAY Vishay Semiconductors Switching Diode Features • • • • Silicon Epitaxial Planar Diodes Saving space Hermetic sealed parts Fits onto SOD 323 / SOT 23 footprints 9612315 Mechanical Data • Electrical data identical with the devices


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    PDF BAV300 BAV100. BAV103 BAV200. BAV203 BAV301 BAV302 BAV303 BAV300-GS18

    BAV10

    Abstract: No abstract text available
    Text: BAV300 / 301 / 302 / 303 VISHAY Vishay Semiconductors Switching Diode Features • • • • • Silicon Epitaxial Planar Diodes Saving space Hermetic sealed parts Fits onto SOD 323 / SOT 23 footprints Electrical data identical with the devices BAV100.BAV103 / BAV200.BAV203


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    PDF BAV300 BAV100. BAV103 BAV200. BAV203 BAV301 BAV302 BAV303 BAV300-GS18 BAV10

    Untitled

    Abstract: No abstract text available
    Text: BAV300 / 301 / 302 / 303 Switching Diode Features Silicon Epitaxial Planar Diodes Saving space Hermetic sealed parts Fits onto SOD 323 / SOT 23 footprints Electrical data identical with the devices BAV100.BAV103 / BAV200.BAV203 Applications General purposes


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    PDF BAV300 BAV100. BAV103 BAV200. BAV203 BAV301 BAV302 BAV303 BAV300

    MGA-72543

    Abstract: wimax atwk-wx01 VMMK-1225 ALM-31222 ADA-4789 ALM-42316 3866 transistor ABA-54563 limiters
    Text: AVAGO TECHNOLOGIES WiMAX Designer Kit ATWK-WX01 Contains 3 parts each of the following 32 part numbers: ATF-50189 MGA-30216 MGA-30316 ALM-31222 ALM-31322 ALM-32320 ALM-42216 ALM-42316 MGA-565P8 ABA-54563 ADA-4789 HSMP-3816 HSMP-3866 ATF-54143 ATF-55143 ATF-33143


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    PDF ATWK-WX01) ATF-50189 MGA-30216 MGA-30316 ALM-31222 ALM-31322 ALM-32320 ALM-42216 ALM-42316 MGA-565P8 MGA-72543 wimax atwk-wx01 VMMK-1225 ALM-31222 ADA-4789 ALM-42316 3866 transistor ABA-54563 limiters

    FMCW Radar

    Abstract: 77GHz Radar infineon FMCW sensor radar 24ghz AN190 diagram radar circuit 77GHz circulator Types of Radar Antenna FMCW circuit FMCW
    Text: Low Barri er RF Sch ottk y Dio d e BAT2 4 Mi xe r f or FMCW Ra dar at 2 4 GHz Application Note AN190 Revision: V1.0 Date: 22-01-2010 RF and Protecti on Devi c es Edition 15-02-2010 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


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    PDF AN190 AN190, 24GHz BAT24: FMCW Radar 77GHz Radar infineon FMCW sensor radar 24ghz AN190 diagram radar circuit 77GHz circulator Types of Radar Antenna FMCW circuit FMCW

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


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    PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


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    PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    sp1648

    Abstract: TRANSISTOR tr4 variable oscillator TR10 TR14 GEC Plessey Semiconductors variable inductor for 100MHz oscillator varactor capacitor diode
    Text: JULY 1994 3028-2.1 SP1648 ECL OSCILLATOR The SP1648 is an emitter-coupled oscillator, constructed on a single monolithic silicon chip. Output levels are compatible with ECL III logic levels. The oscillator requires an external parallel tank circuit consisting of an


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    PDF SP1648 SP1648 TRANSISTOR tr4 variable oscillator TR10 TR14 GEC Plessey Semiconductors variable inductor for 100MHz oscillator varactor capacitor diode

    TRANSISTOR tr4

    Abstract: No abstract text available
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS JULY 1994 3028-2.1 SP1648 ECL OSCILLATOR The SP1648 is an emitter-coupled oscillator, constructed on a single monolithic silicon chip. Output levels are compatible with ECL III logic levels. The oscillator


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    PDF SP1648 SP1648 TRANSISTOR tr4

    Untitled

    Abstract: No abstract text available
    Text: Attenuators • Fixed and Digital • GaAs, PIN Diode, & Schottky Diode Technology • RF Relay • Thin Film MIC Technology • Solid State Connectorized • 1 Bit Through 7 Bit Attenuators wtih 0.1 dB LSB’s Through 63.5 dB Range • Full Military Screening Available


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    PDF DC-310

    Untitled

    Abstract: No abstract text available
    Text: Attenuators • Fixed and Digital • GaAs, PIN Diode, & Schottky Diode Technology • RF Relay • Thin Film MIC Technology 138 • Solid State Connectorized • 1 Bit Through 8 Bit Attenuators wtih 0.1 dB LSB’s Through 127 dB Range • Full Military Screening Available


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    PDF DC-3000 DAT15015-X DAT15073 DA0879 DAT71987 DAT76191 DAT76199 DAT86198

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    Untitled

    Abstract: No abstract text available
    Text: Si i PRELIMINARY MPS-302201 -87 r r 100 TO 3000 MHz GaAs FET AMPLIFIER kJ. MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 F A X 510-651-2208 FEATURES I MPS302201-87 • +34 dBm TYPICAL IP3 0.0151 TYP. 0.18- SQ. RF IN I RF OUT • +22 dBm TYPICAL P1dB


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    PDF MPS-302201 MPS302201-87 MPS-302201-87 R0-3003 MP8-302201

    Untitled

    Abstract: No abstract text available
    Text: MPS-302201-84 jVtW J lO litS O lO i l l i t r i i l l * lain inpilffior Email: info@mwtinc.com www.mwtinc.com B M flN M # • High IP3 +35 dBm Typcal Variable Gain • High PldB +22 dBm Typical 30% High Power Added Efficiency • +5 Volt Bias The MPS-302201-84 is an internally matched GaAs FET ampiifier in a gold/


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    PDF MPS-302201-84 MPS-302201-84 040TYP. 320TYP.

    Untitled

    Abstract: No abstract text available
    Text: That EWLETT mL'fim H PACKARD 2.5 Gb/s SMQW Pigtaüed Laser Modules Technical Data HFCT-3024 SMQW Mini DIL Features D escription • Strained Multi Quantum Well SMQW Fabry Perot Laser Chip • Low Threshold and Operating Current • Wide Operating Tem perature Range


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    PDF HFCT-3024 HFCT-3024 HFCT-3024Axx HFCT-3024A HFCT-3024AFP HFCT-3024ASC HFCT-3024AST HFCT-3024ADN