Untitled
Abstract: No abstract text available
Text: UM5079/Q Single Line ESD Protection Diode Array UM5079/Q FBP2 1.0x0.6 /DFN2 1.0×0.6 General Description The UM5079/Q ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional area
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UM5079/Q
UM5079/Q
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KDS2236M
Abstract: KDS2236S marking 4v
Text: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KDS2236M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AFC APPLICATION FOR FM RECEIVER. KDS2236M FEATURES • High Q : Q=70 Min. (f=50MHz). • Low Reverse Current : lR=100nA(Max.) (Vr=4V).
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KDS2236M/S
50MHz)
100nA
KDS2236M)
KDS2236S)
KDS2236M
T0-92M
KDS2236S
KDS2236M
KDS2236S
marking 4v
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V23136 tyco relay
Abstract: 5 pin relay 12vdc free 5 pin relay 12vdc for 40A 12VDC relay 5 pin relay 12vdc 200 ohm ISO 7588 V23136-B1001-X051 V23136-A1001-X057 for 40A 14VDC relay pin number 6 pin relay 12vdc with NO NC
Text: Automotive Relays Plug-in Mini ISO Relays Shrouded Power Relay F4 A Q Q Q Pin assignment similar to ISO 7588 part 1 Plug-in terminals Customized versions on request – Integrated components e.g. resistor, diode – Customized marking/color – Special cover with bracket
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Limiti1414552-0
V23136-A1001-X057
V23136-B1001-X051
V23136 tyco relay
5 pin relay 12vdc free
5 pin relay 12vdc
for 40A 12VDC relay
5 pin relay 12vdc 200 ohm
ISO 7588
for 40A 14VDC relay pin number
6 pin relay 12vdc with NO NC
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858787A
Abstract: TE1088 45h11 VF4A-65F11-S01 TE1088-R1
Text: Automotive Relays Plug-in Mini ISO Relays VF4A Standard, Shrouded and Weatherproof Q Q Q Pin assignment similar to ISO 7588 part 1 Plug-in terminals Customized versions on request – Integrated components (e.g. resistor, diode) – Customized marking – Special covers (e.g. brackets, shrouded)
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6 pin relay 12vdc with NO NC
Abstract: 5 pin relay 12vdc 5 pin relay 12vdc with NO NC V23234-A1001-X036 V23234-C1001-X005 relay 12vdc with diode V2323 V23234-A0001-X032 V23234-A0004-X051 5 pin relay 12vdc no nc
Text: Automotive Relays Plug-in Mini ISO Relays Power Relay B Q Q Q Pin assignment similar to ISO 7588 part 1 Plug-in terminals Customized versions on request – 24VDC versions with contact gap >0.8mm – Integrated components e.g. resistor, diode – Customized marking/color
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24VDC
24VDC
12VDC
12VDC
50A2x87
6 pin relay 12vdc with NO NC
5 pin relay 12vdc
5 pin relay 12vdc with NO NC
V23234-A1001-X036
V23234-C1001-X005
relay 12vdc with diode
V2323
V23234-A0001-X032
V23234-A0004-X051
5 pin relay 12vdc no nc
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KDS2236M
Abstract: KDS2236S st Diode marking EE
Text: SEMICONDUCTOR TECHNICAL DATA KDS2236M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AFC APPLICATION FOR FM RECEIVER. FEATURES • High Q : Q=70 Min. (f=50MHz). • Low Reverse Current : lR=100nA(Max.) ( V r = 4 V ) . MAXIMUM RATINGS (Ta=25°C)
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OCR Scan
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KDS2236M/S
50MHz)
100nA
KDS2236M
TQ-92M
KDS2236M)
KDS2236S)
KDS2236S
KDS2236M
KDS2236S
st Diode marking EE
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS2236M/S TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE AFC APPLICATION FOR FM RECEIVER. B A FEATURES ・High Q : Q=70 Min. (f=50MHz). O F ・Low Reverse Current : IR=100nA(Max.) (VR=4V). H G M C MAXIMUM RATING (Ta=25℃)
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KDS2236M/S
50MHz)
100nA
KDS2236M)
O-92M
50MHz
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KDS2236S
Abstract: KDS2236M *2236 capacitance
Text: SEMICONDUCTOR KDS2236M/S TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE AFC APPLICATION FOR FM RECEIVER. B A FEATURES High Q : Q=70 Min. (f=50MHz). O F Low Reverse Current : IR=100nA(Max.) (VR=4V). H G M C SYMBOL RATING UNIT Reverse Voltage
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KDS2236M/S
50MHz)
100nA
O-92M
50MHz
KDS2236S
KDS2236M
*2236 capacitance
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KDS2236M
Abstract: KDS2236S 2236A
Text: KDS2236M/S SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE TECHNICAL DATA AFC APPLICATION FOR FM RECEIVER. B A FEATURES ᴌHigh Q : Q=70 Min. (f=50MHz). O F ᴌLow Reverse Current : IR=100nA(Max.) (VR=4V). H G M C MAXIMUM RATING (Ta=25ᴱ)
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KDS2236M/S
50MHz)
100nA
O-92M
50MHz
KDS2236M
KDS2236S
2236A
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FBP02
Abstract: No abstract text available
Text: UM5059/Q Single Line ESD Protection Diode Array UM5059 UM5059Q FBP02 1.0x0.6 DFN2 1.0×0.6 General Description The UM5059/Q ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional area
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UM5059/Q
UM5059
UM5059Q
FBP02
UM5059/Q
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1ss413
Abstract: SOD-523 marking Q
Text: 1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Q Top View Marking Code: "Q" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value
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1SS413
OD-523
OD-523
1ss413
SOD-523 marking Q
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ksd2032
Abstract: SDV702
Text: SDV702 Semiconductor Variable Capacitance Diode Descriptions • AFC application for FM receiver Features • High Q : Q=70 Min. (f=50MHz) • Low reverse current : IR= 100nA(Max.) (VR=4V) Ordering Information Type No. SDV702 Marking Package Code DV2 SOT-23
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SDV702
50MHz)
100nA
OT-23
KSD-2032-001
50MHz
ksd2032
SDV702
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SDV702D
Abstract: No abstract text available
Text: SDV702D Semiconductor Variable Capacitance Diode Descriptions • AFC application for FM receiver Features • High Q : Q=70 Min. (f=50MHz) • Low reverse current : IR= 100nA(Max.) (VR=4V) Ordering Information Type No. Marking SDV702D V2 Package Code SOD-323
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SDV702D
50MHz)
100nA
OD-323
KSD-C006-000
50MHz
SDV702D
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2-pin ir receiver
Abstract: AFC marking SDV702F ksd2067 ksd 120 bsc 2401
Text: SDV702F Semiconductor Variable Capacitance Diode Descriptions • AFC application for FM receiver Features • High Q : Q=70 Min. (f=50MHz) • Low reverse current : IR= 100nA(Max.) (VR=4V) Ordering Information Type No. Marking Package Code SDV702F DV2 SOT-23F
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SDV702F
50MHz)
100nA
OT-23F
KSD-2067-000
50MHz
2-pin ir receiver
AFC marking
SDV702F
ksd2067
ksd 120
bsc 2401
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Untitled
Abstract: No abstract text available
Text: 33E D • fl2 3 b 3 2 Q Q O lb S Û S 0 H S IP Silicon Diode Array S IE M E N S / BGX 50 A SPCL-, SEM ICÔ N DS _ • Bridge configuration • High-speed switch diode chip 4 2 Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape
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Q62702-G35
Q62702-G38
f-150
T-23-05
rA-25Â
23b320
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Untitled
Abstract: No abstract text available
Text: Silicon Switching Diode Array • • BAV 74 F o r high -spe e d sw itching C o m m o n cathode Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package B A V 74 JA Q 62702-A498 Q 62 70 2-A 69 5 S O T 23 Maximum ratings per diode
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62702-A498
BAV74
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V23136 tyco relay
Abstract: V23136-J1004-X050 V2313 FUSE x050 TE136
Text: Automotive Relays Plug-in Maxi ISO Relays Shrouded Power Relay F7 A Q Q Pin assignment similar to ISO 7588 part 1 Customized versions on request – Integrated components e.g. resistor, diode – Customized marking/color – Special cover with bracket Typical applications
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12VDC
V23136-J1004-X050
V23136 tyco relay
V2313
FUSE x050
TE136
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Untitled
Abstract: No abstract text available
Text: T - o l - ô l Silicon Low Leakage Diode Array 3SE D • fl2 3 b 3 2 Q SIEM ENS/ Q Q lb 5 b 4 3 BAW156 ISIP S P C L •, SEM ICON DS • Low Leakage applications • Medium speed switching times • Common anode Type Marking Ordering code 8-mm tape Package
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BAW156
Q62702-A922
100ns
23b320
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H20R120
Abstract: rg54 h20r120 igbt
Text: Soft Switching Series IHW15N120R q Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications
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IHW15N120R
IHW20N120R
H20R120
rg54
h20r120 igbt
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BBY55-02W
Abstract: CT10 SCD80
Text: BBY55-02W Silicon Tuning Diode Excellent linearity High Q hyperabrupt tuning diode 2 Low series inductance Designed for low tuning voltage operation for VCO's in mobile communications equipment 1 Very low capacitance spread VES05991 Type Marking
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BBY55-02W
VES05991
SCD80
Jul-12-2001
Valuesl-12-2001
BBY55-02W
CT10
SCD80
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Untitled
Abstract: No abstract text available
Text: SIEMENS BBY53 Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code BBY53 S7s Q62702-B824
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BBY53
Q62702-B824
OT-23
H35bDS
0S35bD5
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Untitled
Abstract: No abstract text available
Text: SIEMENS BBY 51-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation • For VCO’s in mobile communications equipment Type Marking Ordering Code Pin Configuration
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1-02W
BBY51-02W
Q62702-B0858
SCD-80
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Q62702-B0825
Abstract: No abstract text available
Text: BBY 53-03W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration
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3-03W
Q62702-B0825
OD-323
Sep-11-1996
Q62702-B0825
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B824 transistor
Abstract: transistor B824 B824 Q62702-B824
Text: BBY 53 Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration BBY 53
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Q62702-B824
OT-23
Feb-04-1997
B824 transistor
transistor B824
B824
Q62702-B824
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