MA4E1340
Abstract: medium barrier schottky MA4E1340A-1146T MA4E1340A-287T MA4E1340B-1146T MA4E1340B-287T MA4E1340E-1068T SCHOTTKY DIODE SOT-143 47 SOT143
Text: MA4E1340 Series Silicon Medium Barrier Schottky Diode Features V 4.00 Package Outlines RF & Microwave Medium Barrier Silicon 70 V Schottky Diode n Available as Single Diode, Series Pair or Unconnected Pair Configurations. n Low Profile Surface Mount Plastic Packages
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MA4E1340
OT-23
OT-143
OT-323
OD-323
medium barrier schottky
MA4E1340A-1146T
MA4E1340A-287T
MA4E1340B-1146T
MA4E1340B-287T
MA4E1340E-1068T
SCHOTTKY DIODE SOT-143
47 SOT143
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Untitled
Abstract: No abstract text available
Text: MA4E1338 Series Silicon Medium Barrier Schottky Diode Features V 3.00 Package Outlines RF & Microwave Medium Barrier Silicon 8 V Schottky Diode n Available as Single Diode, Series Pair or Unconnected Pair Configurations. n Low Profile Surface Mount Plastic Package
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MA4E1338
OT-23
OT-143
OT-323
OD-323
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Surface Mount RF Schottky Barrier Diodes
Abstract: No abstract text available
Text: MA4E1340 Series Silicon Medium Barrier Schottky Diode Features V 4.00 Package Outlines RF & Microwave Medium Barrier Silicon 70 V Schottky Diode n Available as Single Diode, Series Pair or Unconnected Pair Configurations. n Low Profile Surface Mount Plastic Packages
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MA4E1340
OT-23
OT-143
OT-323
OD-323
Surface Mount RF Schottky Barrier Diodes
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DZ800S17K3
Abstract: FF800R17KE3
Text: Technische Information / technical information DZ800S17K3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Emitter Controlled³ Diode 62mm C-series module with Emitter Controlled³ diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data
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DZ800S17K3
DZ800S17K3
FF800R17KE3
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MOZ 23
Abstract: DD1000S33HE3 48 H diode
Text: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values
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DD1000S33HE3
MOZ 23
DD1000S33HE3
48 H diode
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DD1000S33
Abstract: FZ1000R33HE3
Text: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values
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DD1000S33HE3
DD1000S33
FZ1000R33HE3
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DZ800S17K3
Abstract: No abstract text available
Text: Technische Information / technical information DZ800S17K3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit EmCon3 Diode 62mm C-series module with EmCon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values
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DZ800S17K3
DZ800S17K3
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SCHOTTKY DIODE SOT-143
Abstract: 040P
Text: Silicon Schottky Diode Ring Quad Chips MA4E2062 Series MA4E2062 Series Preliminary Specifications Silicon Schottky Diode Ring Quards Features • • • • • • • Package Outlines Small Size Designed for High Volume, Low Cost Closely Matched Junctions
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MA4E2062
OT-143
SCHOTTKY DIODE SOT-143
040P
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MA4E2038
Abstract: handling of beam lead diodes police radar detector M541
Text: Millimeter Wave GaAs Beam Lead Schottky Barrier Diode MA4E2038 MA4E2038 Millimeter Wave GaAs Beam Lead Schottky Barrier Diode 1,2 Package Outlines Features • • • • • Low Series Resistance Low Capacitance High Cut off Frequency Silicon Nitride Passivation
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MA4E2038
MA4E2038
handling of beam lead diodes
police radar detector
M541
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Untitled
Abstract: No abstract text available
Text: JANUARY 1996 DSF21035SV ADVANCE ENGINEERING DATA DS4176-1.3 DSF21035SV FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 3500V IF AV 3000A IFSM 20000A Qr 1500µC trr 6.0µs • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters. ■ Choppers. FEATURES
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DSF21035SV
DS4176-1
0000A
DSF21035SV35
DSF21035SV34
DSF21035SV32
DSF21035SV30
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Untitled
Abstract: No abstract text available
Text: DSA300I45NA preliminary Schottky Diode Gen ² F = High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Backside: Isolated 2 1 3 4 Features / Advantages: Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour
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DSA300I45NA
OT-227B
60747and
20120907a
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AN4506
Abstract: DSF21035SV DSF21035SV30 DSF21035SV32 DSF21035SV34 DSF21035SV35
Text: DSF21035SV DSF21035SV Fast Recovery Diode Advance Information Replaces March 1998 version, DS4176-1.4 DS4176-2.0 January 2000 KEY PARAMETERS VRRM 3500V IF AV 3000A IFSM 20000A Qr 1500µC trr 6.0µs APPLICATIONS • Freewheel Diode ■ Antiparallel Diode ■ Inverters
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DSF21035SV
DS4176-1
DS4176-2
0000A
DSF21035SV35
DSF21035SV34
DSF21035SV32
DSF21035SV30
AN4506
DSF21035SV
DSF21035SV30
DSF21035SV32
DSF21035SV34
DSF21035SV35
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Abstract: No abstract text available
Text: DSS6-0025BS preliminary Schottky Diode VRRM = 25 V I FAV = 6A VF = 0.3 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-0025BS Marking on Product: 6Y025AS Backside: cathode 1 3 4 Features / Advantages: Applications:
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DSS6-0025BS
6Y025AS
O-252
60747and
20131031b
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Untitled
Abstract: No abstract text available
Text: DSA10I100PM preliminary Schottky Diode Gen ² VRRM = 100 V I FAV = 10 A VF = 0.71 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA10I100PM Backside: isolated 3 1 Features / Advantages: Applications: Package: TO-220FP
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DSA10I100PM
O-220FP
60747and
20130726a
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DSF21035SV
Abstract: DSF21035SV30 DSF21035SV32 DSF21035SV34 DSF21035SV35
Text: DSF21035SV DSF21035SV Fast Recovery Diode Advance Information Replaces March 1998 version, DS4176-1.4 DS4176-2.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 3500V IF AV 3000A IFSM 20000A Qr 1500µC trr 6.0µs • Freewheel Diode ■ Antiparallel Diode ■ Inverters
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DSF21035SV
DS4176-1
DS4176-2
0000A
DSF21035SV35
DSF21035SV34
DSF21035SV32
DSF21035SV30
DSF21035SV
DSF21035SV30
DSF21035SV32
DSF21035SV34
DSF21035SV35
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Abstract: No abstract text available
Text: SEPTEMBER 1996 DSF20060SF ADVANCE ENGINEERING DATA DS4218-3.3 DSF20060SF FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 780A IFSM 7800A Qr 1400µC trr 6.5µs • Inverters. ■ Choppers. ■ Inverse Parallel Diode. ■ Freewheel Diode. FEATURES
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DSF20060SF
DS4218-3
DSF20060SF60
DSF20060SF58
DSF20060SF56
DSF20060SF55
CB450.
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Untitled
Abstract: No abstract text available
Text: DSA15IM200UC preliminary Schottky Diode Gen ² VRRM = 200 V I FAV = 15 A VF = 0.78 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA15IM200UC Marking on Product: SFMAUI Backside: cathode 1 3 4 Features / Advantages:
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DSA15IM200UC
O-252
60747and
20131031b
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Untitled
Abstract: No abstract text available
Text: DSA10I100PM preliminary Schottky Diode Gen ² VRRM = 100 V I FAV = 10 A VF = 0.71 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA10I100PM Backside: isolated 3 1 Features / Advantages: Applications: Package: TO-220FP
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DSA10I100PM
O-220FP
60747and
20131031a
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Untitled
Abstract: No abstract text available
Text: DSA300I200NA preliminary Schottky Diode Gen ² F = High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Backside: Isolated 2 1 3 4 Features / Advantages: Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour
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DSA300I200NA
OT-227B
60747and
20120907a
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Untitled
Abstract: No abstract text available
Text: DSF21035SV DSF21035SV Fast Recovery Diode Advance Information Replaces January 2000 version, DS4176-2.0 DS4176-3.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 3500V IF AV 3000A IFSM 20000A Qr 1500µC trr 6.0µs • Freewheel Diode ■ Antiparallel Diode ■ Inverters
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DSF21035SV
DS4176-2
DS4176-3
0000A
DSF21035SV35
DSF21035SV34
DSF21035SV32
DSF21035SV30
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PDM5001
Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH
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C3557
PH1503
PH150
PDM5001
PDT400N16
pah60n8cm
PHMB50E6CL
PHT250N16
PHT400N16
PD100KN16
PAH100N8CM
PT76S16
PAT400N16
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Untitled
Abstract: No abstract text available
Text: E-LINE DIODE TO-92 STYLE PACKAGE OUTLINES Devices can be ordered with the following lead configurations by adding the indicated suffix to the part number. CL 2.5 * Typ IN-LINE DIODE IN-LINE D U A L DIODE _ _ J — M - 6.6
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DO-35)
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Untitled
Abstract: No abstract text available
Text: IUI mam I n t e r n a t io n a l R e c t if ie r IGBTs Insulated Gate Bipolar Transistors IGBT CIRCUIT D IA G R A M S See page 119 for IGBT case outlines A 92 B <i 2 à 1 o 3 without diode 3' 30 4 40- ô 2 3 with diode with diode U r i 2 with diode Single Switch Circuits
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diode super fast
Abstract: No abstract text available
Text: Outline äfWTctf /*1? —r / W M i 7 lJ 7 n ztf'f* - t - K, > 3 7 K, □ - Shindengen has an abundance of power devices, such :, m as bridge diode, super fast recovery diode, schottky K, MOSFETi^pq barrier diode, Muliti-purpose single diode, power transistor
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