zener diode RD2.2S
Abstract: RD2.0HS rd2.2m nec 10f RD16MW str 450 a RD4.3HS NEC Zener diode RD3.0M RD3.0HS RD51P
Text: Diode Zener Diode • Zener Diode Quick Reference 1/2 Vz (V) P (W) TYP. 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 Package 0.2 0.15 RD4.7UJ RD5.1UJ
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RD10UJ
RD11UJ
RD12UJ
RD13UJ
RD15UJ
RD16UJ
RD18UJ
RD20UJ
RD22UJ
RD24UJ
zener diode RD2.2S
RD2.0HS
rd2.2m
nec 10f
RD16MW
str 450 a
RD4.3HS
NEC Zener diode RD3.0M
RD3.0HS
RD51P
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FMXA-1106S
Abstract: XA1106 Diode XA1106 FMX-G26S sanken lot number B105 CF35 SANKEN power supply SANKEN smps
Text: Ultrafast Recovery Diode FMXA-1106S •General Description November, 2005 ■Package-TO220F-2Pin Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a fast recovery diode
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FMXA-1106S
Package---TO220F-2Pin
D01-002EA-051128
FMXA-1106S
XA1106
Diode XA1106
FMX-G26S
sanken lot number
B105
CF35
SANKEN power supply
SANKEN smps
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XA1106
Abstract: Diode XA1106 FMXG26 FMX-G26S FMXA-1106S sanken lot number B105 Sanken marking SANKEN power supply
Text: Ultrafast Recovery Diode FMXA-1106S •General Description November, 2005 ■Package-TO220F-2Pin Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a fast recovery diode
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FMXA-1106S
Package---TO220F-2Pin
D01-002EA-051128
XA1106
Diode XA1106
FMXG26
FMX-G26S
FMXA-1106S
sanken lot number
B105
Sanken marking
SANKEN power supply
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MPEN-230AF
Abstract: sanken sanken power transistor CF35
Text: Schottky Barrier Diode MPEN-230AF December. 2005 •General Description ■Package-TO-262 High Voltage Schottky Barrier Diode 100V . The low leakage current and low VF have been achieved by using the optimum barrier metal. ■Applications • DC-DC converters
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MPEN-230AF
Package---TO-262
100Vguarantee
D01-006EA-051202
MPEN-230AF
sanken
sanken power transistor
CF35
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diode B105
Abstract: Sanken catalogue MPEN-230AF
Text: Schottky Barrier Diode MPEN-230AF December. 2005 •General Description ■Package-TO-262 High Voltage Schottky Barrier Diode 100V . The low leakage current and low VF have been achieved by using the optimum barrier metal. ■Applications • DC-DC converters
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MPEN-230AF
Package---TO-262
100Vguarantee
D01-006EA-051202
diode B105
Sanken catalogue
MPEN-230AF
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d0109
Abstract: sanken power transistor FMEN-210A 210A
Text: Schottky Barrier Diode FMEN-210A March, 2006 •General Description ■Package-TO220F FMEN-210A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications • DC-DC converters
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FMEN-210A
Package---TO220F
FMEN-210A
D01-090EA-060310
d0109
sanken power transistor
210A
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode FMEN-220A March, 2006 General Description Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications DC-DC converters
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FMEN-220A
Package---TO220F
FMEN-220A
D01-010EA-060310
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FME-220B
Abstract: sanken power transistor CF35 FME220 sanken
Text: Schottky Barrier Diode FME-220B April. 2007 •General Description ■Package-TO220F FME-220B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters
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FME-220B
Package---TO220F
FME-220B
150Vguarantee
D01-013EA-070323
sanken power transistor
CF35
FME220
sanken
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FMEN-210A
Abstract: FMEN210
Text: Schottky Barrier Diode FMEN-210A March, 2006 •General Description ■Package-TO220F FMEN-210A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications • DC-DC converters
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FMEN-210A
Package---TO220F
FMEN-210A
D01-090EA-060310
FMEN210
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FME-210B
Abstract: CF35 210B
Text: Schottky Barrier Diode FME-210B April. 2007 •General Description ■Package-TO220F FME-210B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters
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FME-210B
Package---TO220F
FME-210B
150Vguarantee
D01-012EA-070322
CF35
210B
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FMEN-220A
Abstract: No abstract text available
Text: Schottky Barrier Diode FMEN-220A March, 2006 •General Description ■Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ● DC-DC converters
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FMEN-220A
Package---TO220F
FMEN-220A
0E-01
D01-010EA-060310
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode FMEN-210A March, 2006 General Description Package-TO220F FMEN-210A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications • DC-DC converters
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FMEN-210A
Package---TO220F
FMEN-210A
D01-090EA-060310
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FME-210B
Abstract: sanken CF35 Sanken catalog
Text: Schottky Barrier Diode FME-210B April. 2007 •General Description ■Package-TO220F FME-210B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters
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FME-210B
Package---TO220F
FME-210B
150Vguarantee
D01-012EA-070322
sanken
CF35
Sanken catalog
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sanken power transistor
Abstract: CF35 FMEN-220A sanken DSA0016518 Sanken catalog "Sanken Rectifiers"
Text: Schottky Barrier Diode FMEN-220A March, 2006 •General Description ■Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ● DC-DC converters
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FMEN-220A
Package---TO220F
FMEN-220A
0E-01
D01-010EA-060310
sanken power transistor
CF35
sanken
DSA0016518
Sanken catalog
"Sanken Rectifiers"
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode MPEN-230AF General Description December. 2005 Package-TO-262 High Voltage Schottky Barrier Diode 100V . The low leakage current and low VF have been achieved by using the optimum barrier metal. Applications • DC-DC converters • AC adapter
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MPEN-230AF
Package---TO-262
100Vguarantee
D01-006EA-051202
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smd diode 74a
Abstract: IEC1000-4-2 uPD72011 SC-76 SC-78 smd diode 2d smd diode 6D smd lg diode PD7201 SC5915
Text: E.S.D NOISE CLIPPING DIODE SERIES November 1998 E.S.D NOISE CLIPPING DIODES The absorption device for Electrostatic Discharge and Surge NNCD is the diode developed for the absorption device for ESD Electrostatic Discharge and surge. Recently, necessity of complying with the EMC (Electromagnetic Compatibility) regulation
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IEC1000-4-2
D11663EJ4V0PF00
smd diode 74a
uPD72011
SC-76
SC-78
smd diode 2d
smd diode 6D
smd lg diode
PD7201
SC5915
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Diode XA1106
Abstract: XA1106
Text: Ultrafast Recovery Diode FMXA-1106S General Description November, 2005 Package-TO220F-2Pin Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a fast recovery diode FRD for a continuous-current-mode PFC circuit.
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FMXA-1106S
Package---TO220F-2Pin
D01-002EA-051128
Diode XA1106
XA1106
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74F1056
Abstract: 74F1056SC C1995 M16A b50 diode
Text: 74F1056 8-Bit Schottky Barrier Diode Array General Description Features The ’F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines This device is designed to suppress negative transients caused by line reflections switching
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74F1056
F1056
74F1056SC
16-Lead
74F1056
74F1056SC
C1995
M16A
b50 diode
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74F1056
Abstract: M16A 74F1056SC
Text: 74F1056 8-Bit Schottky Barrier Diode Array General Description The ’F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines. This device is designed to suppress negative transients caused by line reflections, switching
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74F1056
F1056
74F1056SC
16-Lead
74F1056
M16A
74F1056SC
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10ghz optical modulator driver
Abstract: 10Gb/s laser driver FTM1141GF STM-64 10 gb laser diode thermistor 503
Text: Driver Integrated 10Gb/s MI-DFB LD Module FTM1141GF FEATURES • Driver integrated 10Gb/s MI-DFB module for 800ps/nm optical transmission • MI-DFB-LD Modulator Integrated DFB Laser Diode is included • Modulator driver IC is included • Built-in optical isolator, PIN-Photo diode for monitor, thermistor
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10Gb/s
FTM1141GF
10Gb/s
800ps/nm
FTM1141GF
a4888
10ghz optical modulator driver
10Gb/s laser driver
STM-64
10 gb laser diode
thermistor 503
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10 gb laser diode
Abstract: 10ghz optical modulator driver
Text: Driver Integrated 10Gb/s MI-DFB LD Module FTM1141GF FEATURES • Driver integrated 10Gb/s MI-DFB module for 800ps/nm optical transmission • MI-DFB-LD Modulator Integrated DFB Laser Diode is included • Modulator driver IC is included • Built-in optical isolator, PIN-Photo diode for monitor, thermistor
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10Gb/s
FTM1141GF
10Gb/s
800ps/nm
FTM1141GF
FCSI0103M200
10 gb laser diode
10ghz optical modulator driver
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10ghz optical modulator driver
Abstract: FTM1141GF-C nrz optical modulator 10Gb/s laser driver stm-64 dfb TEC Driver STM-64 10 gb laser diode Integrated Modulator and Driver Module
Text: Driver Integrated 10Gb/s MI-DFB LD Module FTM1141GF-C FEATURES • Driver integrated 10Gb/s MI-DFB module for 1600ps/nm optical transmission • MI-DFB-LD Modulator Integrated DFB Laser Diode is installed • Modulator driver IC is installed • Built-in optical isolator, PIN-Photo diode for monitor, thermistor
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10Gb/s
FTM1141GF-C
10Gb/s
1600ps/nm
FTM1141GF-C
als4888
10ghz optical modulator driver
nrz optical modulator
10Gb/s laser driver
stm-64 dfb
TEC Driver
STM-64
10 gb laser diode
Integrated Modulator and Driver Module
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PIN DIODES OFFER HIGH POWER HF BAND SWITCHING
Abstract: depth sounder sonar doppler sonar motion DOPPLER marine sonar Microwave PIN diode sonar 500 long range acoustic device PIN DIODE
Text: Summer 2000 Sonar Solutions: Same PIN Diode Switches used for MRI Applications Provide Alternative to Relays Overview SONAR the real-time imaging of submerged objects in the deep ocean is a technology enjoying explosive growth. Well over thirty firms worldwide are engaged in the
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MTD3010PN
Abstract: No abstract text available
Text: Photo Diode MTD3010PN Features High Reliability in Demanding Environments Optical Grade Glass Lens Narrow Angular Response Applications Edge Sensing Smoke Detectors Fiber Optics Optical Communication Optical Switch o Maximum Ratings Ta=25 C Characteristic
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MTD3010PN
MTD3010PN
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