TSP70
Abstract: No abstract text available
Text: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > MOSFETs Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS Package Series
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TSP2305A
TSP40GD120P
TSP25G135T
O-247
TSP25GD135T
TSP25G135P
TSP25GD135P
TSP70
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C5257
Abstract: No abstract text available
Text: IKW30N100T TrenchStop series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel diode C • TrenchStop® and Fieldstop technology for 1000 V applications offers: - low VCE sat - very tight parameter distribution
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IKW30N100T
12345646557889A68A6B
C5257
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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NP55N055SUG
Abstract: n55* "ON Semiconductor"
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR N55N055SUG SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP55N055SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER
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N55N055SUG
NP55N055SUG
O-252
O-252)
175ontrol
n55* "ON Semiconductor"
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UBA2010
Abstract: UBA2010T UBA2010/N4 n556 N5560 T8-6foot-70W Philips instant on BALLAST CONTROL IC dimmable Fluorescent BALLAST
Text: }}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}} F I N A L TYPE COMMERCIAL D E V I C E S P E C I F I C A T I O N :UBA2010 T EXPERIMENTAL :N5560 1. General description The UBA2010 is a TL DIMMABLE HALF BRIDGE driver. The high voltage circuit is intended to drive and
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UBA2010
N5560
UBA2010
8-55W)
8-26W)
8-32W)
T8-6foot-70W)
03-june
UBA2010T
UBA2010/N4
n556
N5560
T8-6foot-70W
Philips instant on BALLAST CONTROL IC
dimmable Fluorescent BALLAST
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light detector schmitt trigger
Abstract: ir sensor diode IR object DETECTOR
Text: My Links Home> Products > Detector > Optoschmitt Sensor > Product Page HOA6961-N55 Order Product and Get Support U.S. Authorized Distributors HOA Series IR Transmissive Optoschmitt Sensor, Transistor Output, No Mounting Tab, Plastic Package Global Sales & Service
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HOA6961-N55
light detector schmitt trigger
ir sensor diode
IR object DETECTOR
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22N55
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET IXFH 22 N55 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr = 550 V = 22 A = 0.27 W £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 550 V VDGR TJ = 25°C to 150°C; RGS = 1 MW
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET IXFH 22 N55 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr = 550 V = 22 A = 0.27 W £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 550 V VDGR TJ = 25°C to 150°C; RGS = 1 MW
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22N55
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET IXFH 22 N55 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr = 550 V = 22 A = 0.27 W £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 550 V VDGR TJ = 25°C to 150°C; RGS = 1 MW
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100ms
22N55
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Clock Generator intel atom n450
Abstract: Clock Generator intel atom n470 Intel atom Dual N455 ATOM intel N570 SODIMM DDR3 Mechanical Dimensions BGA559 l atom n450 pin configuration STPC Clock Generator intel atom n455 nm10 n450
Text: Intel Atom Processor N400 & N500 Series Datasheet - Volume 1 This is volume 1 of 2. Refer to Document Ref# 322848 for Volume 2. June 2011 Revision 003 Document Number: 322847-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED,
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700DC-M220
Abstract: 700-M310 100-MCA02 700DC-M310 allen-bradley 100JE 100-FA22 100-FSC280 Allen-Bradley 100-FSD250 700-M400 100-FPTA30
Text: Control Relays Bulletin 700-M / CS 4, Bulletin 700-CF Bulletin 700-M / CS 4 • Up to 8 N/O or up to 4 N/C • Switching Capacity AC-1 12 A Bulletin 700-CF • • • • • Ordering Advice For Allen-Bradley branded products choose the Allen-Bradley Cat. No.
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700-M
700-CF
100-C
700DC-M220
700-M310
100-MCA02
700DC-M310
allen-bradley 100JE
100-FA22
100-FSC280
Allen-Bradley 100-FSD250
700-M400
100-FPTA30
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schematic diagram inverter lcd monitor dell
Abstract: hp laptop charging CIRCUIT diagram dell laptop battery pinout DELL laptop inverter board schematic hp laptop battery pinout testing motherboards using multi meter hp laptop ac adapter schematics diagram circuit diagram of smps dell "full hd" mobile phone camera pinout schematic diagram electrical BIKES USING DC MOTOR
Text: 2. MDmesh II for lighting 3. STV200N55F3 / STV250N55F3 High-current power MOSFETs 4. 2STCxxx / 2STAxxx High-end audio power bipolars 5. STP03D200 2 kV Darlington 6. 2200 V ESBTs 7. RF power design kits 8. USBULC6-2M6 Protection for USB 2.0 9. EMIF06-AUD01F2
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STV200N55F3
STV250N55F3
STP03D200
EMIF06-AUD01F2
EMIF10-LCD03F3
CPL-WB-00C2
STCC08
ETP01-1621
STCF06
ST715
schematic diagram inverter lcd monitor dell
hp laptop charging CIRCUIT diagram
dell laptop battery pinout
DELL laptop inverter board schematic
hp laptop battery pinout
testing motherboards using multi meter
hp laptop ac adapter schematics diagram
circuit diagram of smps dell
"full hd" mobile phone camera pinout
schematic diagram electrical BIKES USING DC MOTOR
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zener diode 1N PH 48
Abstract: zener diode 1N PH 53 1N3020-1 Diodo zener W diodo zener C 18 ph 1N1743 diode ziner 1N4202 ST 41 Diodo Zener 1N32B
Text: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART C ontaining all JEDEC re gistere d Zener diodes. This popular re fere nce cha rt contains high lig h t inform ation on all JEDEC registered Ze ner diode and re c tifie r types as w ell as M icrosem i types. The follow in g Codes are used:
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BZX83
BZX97
BZX98
BZY97
BZD10
BZW22
BZV40
500mW
DO-35
zener diode 1N PH 48
zener diode 1N PH 53
1N3020-1
Diodo zener W
diodo zener C 18 ph
1N1743
diode ziner
1N4202
ST 41 Diodo Zener
1N32B
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Untitled
Abstract: No abstract text available
Text: _ \ G3E D I B K C INTERNATIONAL 117^03 T '0 f-C 7 □□□□□?□ b Type No. 1 N55A_ _ GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681-0392 TeleFax (617)681-9135
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MIL-S-19500,
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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Untitled
Abstract: No abstract text available
Text: RECTIFIER, up to 1kV, 5A, 2 jis January 7, 1998 1N5550 1N5551 1N5552 1N5553 1N5554 3SM2 3SM4 3SM6 3SM8 3SM0 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED STANDARD RECOVERY RECTIFIER DIODE QUICK REFERENCE DATA
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1N5550
1N5551
1N5552
1N5553
1N5554
TEL805-498-2111
1N5550
1N5551
1N5552
1N5553
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SN76670
Abstract: sn76003 SN76660 SN76640 SN7401 SN72747 SN76013 SN76630 SN72820 SN76001
Text: Ordering Instructions and Mechanical Data INTEGRATED CIRCUITS MECHANICAL DATA ORDERING INSTRUCTIONS Electrical characteristics presented in this catalog, unless otherwise noted, apply for circuit type{$ listed in the page heading regardless of package. Except for diode arrays, ECL, and MOS devices, the availability of a circuit function in a
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L2540
L2542
L2541
SN76670
sn76003
SN76660
SN76640
SN7401
SN72747
SN76013
SN76630
SN72820
SN76001
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1N5523 DO7
Abstract: 1n5525
Text: 1N5518 thru Mierosemi Corp. 1N5546 $ The diode experts SANTA ANA, CA SCOTTSDALE, AZ For m ore in fo rm a tio n call: 6 02 941-6300 FEATURES LOW VOLTAGE AVALANCHE D IO D E S DO-7 • LOW ZENER NOISE SPECIFIED • LOW ZEN ERIM PED AN C E • LOW LEAKAGE CURRENT
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1N5518
1N5546
1N5518
N5546B
MIL-S-19500/437
375-inches
1N5546
1N5523 DO7
1n5525
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H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
2600-70XX
2N5777-80
H0A0872-n55
H0A1405-1
H0A0865-L51
h0a1405
HOA708-1
HOA9
til78 phototransistor
MOC70T3
ir diode TIL38
H0A1874-12
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1N5518
Abstract: 1N5519 1N5520 1N5521 1N5522 1N5523 1N5524 1N5546 0.4W zener diode
Text: JGD 1N5518 thru 1 N5546 0 . 4W LOW VOLTAGE AVALANCHE DIODES VOLTAGE RANGE 3.3 to 33 Volts DO-35 FEATURES * * * * Low zener noise specified Low zener impedance Low leakage current Hermetically sealed glass package MECHANICAL CHARACTERISTICS *^CASE: Hermetically sealed glass case. DO - 35.
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1N5518
1N5546
200CC/W
DO-35
1N5519
1N5520
1N5521
1N5522
1N5523
1N5524
1N5546
0.4W zener diode
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KT853
Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
3N24x
24xTX
KT853
KT850
KT853A
LTR-305D
H0A0872-n55
H0A1405-1
h0a2001
MOC70T3
HOA708-1
smd diode 825B
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40n60 transistor
Abstract: MTE40N60 40n60 40N60 snubber 72SM MTE40N55 belleville washer T-39-15 diode n55 H3677
Text: n O T O K O L A SC -CXSTRS/R F > ~ b4 -T-'iy-lü D T | t . 3 b 7 2 S 4 DDtflllB Ö MOTOROLA SEMICONDUCTOR S É IS Â S lf TECHNICAL DATA Designer's Data Sheet M TE40N55 M TE40N60 If Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS
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MTE40N55
MTE40N60
MQ-040AA
HP202NF
MTE40N55
LIT30
C3I755
H3677
40n60 transistor
MTE40N60
40n60
40N60 snubber
72SM
belleville washer
T-39-15
diode n55
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mte maxim
Abstract: GM 950 motorola 40n60 transistor
Text: nOTOKOLA SC -CXSTRS7R F> b4 D T | t,3 b 7 E S 4 □ D t.a n a - T - 'iy - iü a MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA MTE40N55 MTE40N60 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement Mode Silicon Gate TMOS These TM O S Power FETs are designed for high
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MTE40N55
MTE40N60
HP202NF
MTE40IM55
LIT30
C3I755
mte maxim
GM 950 motorola
40n60 transistor
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I-6300
Abstract: DIODE MARKING GU
Text: 1N5518 thru 1N5546 M ierosemi Corp. The dioôe experts SA N T A A N A , CA SC O TTSD ALE, A Z F o r m o re in fo rm a tio n call: 602 9 4 I-6300 FEATURES LOW VOLTAGE AVALANCHE DIODES DO-35 • LOW ZENER NOISE SPECIFIED • LOW ZENER IMPEDANCE • LOW LEAKAGE CURRENT
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1N5518
1N5546
I-6300
1N5518-1
1N5546B-1
IL-S-19500/437
DO-35
1N5546
I-6300
DIODE MARKING GU
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