AP9930M
Abstract: No abstract text available
Text: AP9930M Advanced Power Electronics Corp. 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Full Bridge Application on N-CH BVDSS P2G N2D/P2D RDS ON P1S/P2S P1G N1S/N2S LCD Monitor Inverter N1D/P1D 6.3A
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AP9930M
100ms
135/W
AP9930M
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Untitled
Abstract: No abstract text available
Text: AP9930GM-HF Halogen-Free Product Advanced Power Electronics Corp. 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Low On-resistance Full Bridge Application on LCD Monitor Inverter N-CH BVDSS P2G N2D/P2D RDS ON P1S/P2S P1G N1S/N2S
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AP9930GM-HF
100us
100ms
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9930gm
Abstract: AP9930GM DEVICE MARKING p1g marking code P1D 9930G P2d MARKING CODE n-channel so8 60v
Text: AP9930GM RoHS-compliant Product Advanced Power Electronics Corp. 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Full Bridge Application on N-CH BVDSS P2G N2D/P2D RDS ON P1S/P2S P1G N1S/N2S LCD Monitor Inverter
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AP9930GM
9930GM
9930gm
AP9930GM
DEVICE MARKING p1g
marking code P1D
9930G
P2d MARKING CODE
n-channel so8 60v
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2N AND 2P-CHANNEL ENHANCEMENT
Abstract: SSM9934GM ssm9934
Text: SSM9934GM 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS P2G N2D/P2D Simple Drive Requirement Low On-resistance Full Bridge Application on LCD Monitor Inverter 35V RDS ON P1S/P2S P1G ID N2G N1S/N2S 4.3A P-CH BVDSS N1D/P1D SO-8
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SSM9934GM
2N AND 2P-CHANNEL ENHANCEMENT
SSM9934GM
ssm9934
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Full-bridge inverter
Abstract: SSM9930M
Text: SSM9930M DUAL N- AND DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Low on-resistance Full-bridge applications, such as N-CH P2G N2D/P2D P1S/P2S P1G LCD monitor inverter N1D/P1D SO-8 30V R DS ON 33mΩ 6.3A ID N2G N1S/N2S BV DSS P-CH
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SSM9930M
SSM9930M
Full-bridge inverter
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP9930GM-HF-3 Quad Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement P2G N2D/P2D P1S/P2S Low On-resistance N-CH P1G Full Bridge Applications RoHS-compliant, halogen-free SO-8 N2G N1S/N2S
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AP9930GM-HF-3
AP9930GM-HF-3
AP9930
9930GM
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP9930AGM-HF-3 Quad Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement P2G N2D/P2D P1S/P2S Low On-resistance N-CH P1G Full Bridge Applications RoHS-compliant, halogen-free SO-8 N2G N1S/N2S
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AP9930AGM-HF-3
AP9930AGM-HF-3
AP9930A
9930AGM
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3f381
Abstract: zxmhc3f381n8 ZXMHC3F381N8TC
Text: A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 30V -30V RDS(on) ID TA= 25°C 33mΩ @ VGS= 10V 5.0A 60mΩ @ VGS= 4.5V 3.9A 55mΩ @ VGS= -10V -4.1A 80mΩ @ VGS= -4.5V
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ZXMHC3F381N8
ZXMHC3F381N8TC
3f381
zxmhc3f381n8
ZXMHC3F381N8TC
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3f381
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 30V -30V RDS(on) ID TA= 25°C 33mΩ @ VGS= 10V 5.0A 60mΩ @ VGS= 4.5V 3.9A 55mΩ @ VGS= -10V -4.1A 80mΩ @ VGS= -4.5V
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ZXMHC3F381N8
3f381
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMHC3A01N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 30V RDS(on) ID TA= 25°C 125mΩ @ VGS= 10V 2.7A 180mΩ @ VGS= 4.5V 2.2A 210mΩ @ VGS= -10V -2.1A 330mΩ @ VGS= -4.5V
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ZXMHC3A01N8
ZXMHC3A01N8TC
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3f381
Abstract: ZXMHC3F381N8TC ZXMHC3F381N8 1000T
Text: A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 30V -30V RDS(on) ID TA= 25°C 33mΩ @ VGS= 10V 5.0A 60mΩ @ VGS= 4.5V 3.9A 55mΩ @ VGS= -10V -4.1A 80mΩ @ VGS= -4.5V
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ZXMHC3F381N8
ZXMHC3F381N8TC
522-ZXMHC3F381N8TC
ZXMHC3F381N8TC
3f381
ZXMHC3F381N8
1000T
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DEVICE MARKING p1g
Abstract: 10A07 4.5v to 100v input regulator
Text: A Product Line of Diodes Incorporated ZXMHC10A07N8 100V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 100V RDS(on) ID TA= 25°C 0.70Ω @ VGS= 10V 1.0A 0.90Ω @ VGS= 6.0V 0.9A 1.00Ω @ VGS= -10V -0.9A 1.45Ω @ VGS= -6.0V
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ZXMHC10A07N8
-100V
ZXMHC10A07N8TC
DEVICE MARKING p1g
10A07
4.5v to 100v input regulator
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMHC6A07N8 60V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 60V RDS(on) ID TA= 25°C 0.25Ω @ VGS= 10V 1.8A 0.35Ω @ VGS= 4.5V 1.5A 0.40Ω @ VGS= -10V -1.4A 0.60Ω @ VGS= -4.5V
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ZXMHC6A07N8
ZXMHC6A07N8TC
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMHC10A07N8 100V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 100V RDS(on) ID TA= 25°C 0.70Ω @ VGS= 10V 1.0A 0.90Ω @ VGS= 6.0V 0.9A 1.00Ω @ VGS= -10V -0.9A 1.45Ω @ VGS= -6.0V
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ZXMHC10A07N8
-100V
ZXMHC10A07N8TC
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zxmhc3a01
Abstract: ZXMHC3A01N8 zxmh
Text: A Product Line of Diodes Incorporated ZXMHC3A01N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 30V RDS(on) ID TA= 25°C 125mΩ @ VGS= 10V 2.7A 180mΩ @ VGS= 4.5V 2.2A 210mΩ @ VGS= -10V -2.1A 330mΩ @ VGS= -4.5V
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ZXMHC3A01N8
ZXMHC3A01N8TC
522-ZXMHC3A01N8TC
ZXMHC3A01N8TC
zxmhc3a01
ZXMHC3A01N8
zxmh
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6A07 diode
Abstract: ZXMHC6A07N8 6A07 marking p2s
Text: A Product Line of Diodes Incorporated ZXMHC6A07N8 60V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 60V RDS(on) ID TA= 25°C 0.25Ω @ VGS= 10V 1.8A 0.35Ω @ VGS= 4.5V 1.5A 0.40Ω @ VGS= -10V -1.4A 0.60Ω @ VGS= -4.5V
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ZXMHC6A07N8
ZXMHC6A07N8TC
6A07 diode
ZXMHC6A07N8
6A07
marking p2s
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ZXMHC3A01N8
Abstract: 3A-01 DEVICE MARKING p1g
Text: A Product Line of Diodes Incorporated ZXMHC3A01N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 30V RDS(on) ID TA= 25°C 125mΩ @ VGS= 10V 2.7A 180mΩ @ VGS= 4.5V 2.2A 210mΩ @ VGS= -10V -2.1A 330mΩ @ VGS= -4.5V
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ZXMHC3A01N8
ZXMHC3A01N8TC
ZXMHC3A01N8
3A-01
DEVICE MARKING p1g
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M9930
Abstract: No abstract text available
Text: S T M9930A Green Product S amHop Microelectronics C orp. Dec.20, 2005 2N and 2P Channel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y P -C hannel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 6A R DS (ON) ( m Ω ) Max V DS S ID -30V
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M9930A
M9930
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M9930
Abstract: No abstract text available
Text: S T M9930A S amHop Microelectronics C orp. Dec.20, 2005 2N and 2P Channel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y N-C hannel R DS (ON) ( m W ) V DS S ID 30V 6A P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S ID -30V
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M9930A
M9930
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D3200
Abstract: MMDF3200 MMDF3200Z diode sy 166 TBD 135 Transistor
Text: MOTOROLA SEMICONDUCTOR o TECHNICAL Order thie document by MMDF3200ZD DATA Product Preview WaveFETTM I Motorola Preferred Devica Medium Power Surface Mount Products I TMOS DuaI N-Channel Field Effect Transistors WaveFEPM devices are an advanced series of power MOSFETS which utilize Motorola’s
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MMDF3200ZD
WI-2447
602-2H609
MMDF3200
D3200
MMDF3200Z
diode sy 166
TBD 135 Transistor
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C3025LS
Abstract: marking p1S marking c3025LS DS3582 DMHC3025LSD-13
Text: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = 25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 • • •
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DMHC3025LSD
AEC-Q101
DS35821
C3025LS
marking p1S
marking c3025LS
DS3582
DMHC3025LSD-13
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C3025LS
Abstract: diode n1s
Text: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = 25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 • • •
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DMHC3025LSD
AEC-Q101
DS35821
C3025LS
diode n1s
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C3025LS
Abstract: No abstract text available
Text: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = +25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 •
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DMHC3025LSD
AEC-Q101
DS35821
C3025LS
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2N AND 2P-CHANNEL ENHANCEMENT
Abstract: No abstract text available
Text: AP9932GM Pb Free Plating Product Advanced Power Electronics Corp. 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Full Bridge Application on N-CH BVDSS P2G N2D/P2D RDS ON P1S/P2S P1G LCD Monitor Inverter
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AP9932GM
100us
100ms
186/W
2N AND 2P-CHANNEL ENHANCEMENT
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