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    DIODE MOTOROLA 1N Search Results

    DIODE MOTOROLA 1N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MOTOROLA 1N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC237

    Abstract: sot23 transistor marking JY
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV199LT1 This switching diode has the following features: • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel


    Original     		PDF BAV199LT1 BAV199LT3 inch/10 BAV199LT1 236AB) S218A MSC1621T1 MSC2404 MSD1819A MV1620 BC237 sot23 transistor marking JY

    BC237

    Abstract: 2N2904 bf245b equivalent SOT23 Marking JX
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAV170LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel


    Original     		PDF BAV170LT1 BAV170LT3 inch/10 BAV170LT1 236AB) t218A MSC1621T1 MSC2404 MSD1819A MV1620 BC237 2N2904 bf245b equivalent SOT23 Marking JX

    BC237

    Abstract: TRANSISTOR bc177b
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel


    Original     		PDF BAW156LT1 BAW156LT3 inch/10 BAW156LT1 236AB) Junc218A MSC1621T1 MSC2404 MSD1819A MV1620 BC237 TRANSISTOR bc177b

    BC237

    Abstract: 2n2222a SOT223 5161 common anode
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MV7005T1 Silicon Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for use in high capacitance, high–tuning ratio applications. The device is housed in the SOT-223 package which is designed for


    Original     		PDF OT-223 MV7005T1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 2n2222a SOT223 5161 common anode

    BC237

    Abstract: application notes BF245A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode Common Anode ANODE 3 BAW56LT1 Motorola Preferred Device CATHODE 1 2 CATHODE 3 1 MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge)


    Original     		PDF BAW56LT1 236AB) Un218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 application notes BF245A

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode Common Cathode BAV70LT1 Motorola Preferred Device ANODE 1 3 CATHODE 2 ANODE 3 1 MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge)


    Original     		PDF BAV70LT1 236AB) Uni218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237

    BC237

    Abstract: bc547 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode MMBD7000LT1 Motorola Preferred Device 1 ANODE 3 CATHODE/ANODE 2 CATHODE 3 1 2 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM(surge)


    Original     		PDF MMBD7000LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 bc547 equivalent

    BC237

    Abstract: diode H5
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode MMSD914T1 The switching diode has the following features: Motorola Preferred Device • SOD–123 Surface Mount Package • High Breakdown Voltage • Fast Speed Switching Time 1 Cathode 2 2 Anode 1 CASE 425–04, STYLE 1


    Original     		PDF MMSD914T1 Ambient218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 diode H5

    BC237

    Abstract: BC547
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAS116LT1 Switching Diode This switching diode has the following features: Motorola Preferred Device • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8 mm Tape and Reel Use BAS116LT1 to order the 7 inch/3,000 unit reel


    Original     		PDF BAS116LT1 BAS116LT3 inch/10 BAS116LT1 236AB) Total218A MSC1621T1 MSC2404 MSD1819A MV1620 BC237 BC547

    BC237

    Abstract: SOT-223 number code book FREE
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MV7404T1 Silicon Hyper-Abrupt Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for high capacitance and a tuning ratio of greater than 10 times over a bias range of 2.0 to 10 volts. It provides tuning over a


    Original     		PDF OT-223 solder218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 SOT-223 number code book FREE

    BC237

    Abstract: jedec package TO-226AA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 ANODE 1 Motorola Preferred Device CATHODE 2 3 CATHODE/ANODE 3 1 2 CASE 318 – 08, STYLE 11 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage


    Original     		PDF BAV99LT1 236AB) J218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 jedec package TO-226AA

    2n3819 replacement

    Abstract: 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV809LT1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Device


    Original     		PDF MMBV809LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n3819 replacement 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265

    MJ3001 equivalent

    Abstract: bd139 equivalent transistor equivalent book 2SC2073 2N3055 equivalent transistor NUMBER MJE371 equivalent bd139 equivalent transistor BU108 BDT65C equivalent 2sd313 equivalent darlington tip31
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10005*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS


    Original     		PDF MJ10005 MJ10005* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C MJ3001 equivalent bd139 equivalent transistor equivalent book 2SC2073 2N3055 equivalent transistor NUMBER MJE371 equivalent bd139 equivalent transistor BU108 BDT65C equivalent 2sd313 equivalent darlington tip31

    D45H11 equivalent replacement

    Abstract: 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100 MJ10009
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10009*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS


    Original     		PDF MJ10009 Volt32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D45H11 equivalent replacement 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100

    BU108

    Abstract: BDX33D equivalent BD130 TO126 TIP-551 2SA627 BU100 2SB554 cross reference 2SC2536 2N3025 Transistor 3202 1 A 60
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10007*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode *Motorola Preferred Device 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS


    Original     		PDF MJ10007 Curr32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 BDX33D equivalent BD130 TO126 TIP-551 2SA627 BU100 2SB554 cross reference 2SC2536 2N3025 Transistor 3202 1 A 60

    j305 replacement

    Abstract: BC237 mps2907 replacement BC109C replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 Silicon Tuning Diode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical


    Original     		PDF MMBV3102LT1 236AB) t218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 j305 replacement BC237 mps2907 replacement BC109C replacement

    mj10005 motorola

    Abstract: 1N4937 MJ10004 MJ10005 transistor mj10005
    Text: MOTOROLA Order this document by MJ10005/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ10005*  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON


    Original     		PDF MJ10005/D* MJ10005/D mj10005 motorola 1N4937 MJ10004 MJ10005 transistor mj10005

    MJ10006

    Abstract: 1N4937 MJ10007
    Text: MOTOROLA Order this document by MJ10007/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ10007 *  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode *Motorola Preferred Device 10 AMPERE NPN SILICON POWER DARLINGTON


    Original     		PDF MJ10007/D* MJ10007/D MJ10006 1N4937 MJ10007

    transistor mtp3055e

    Abstract: 1N4937 2N3762 MJ10009 MTP3055E mtp3055
    Text: MOTOROLA Order this document by MJ10009/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ10009*  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON


    Original     		PDF MJ10009/D* MJ10009/D transistor mtp3055e 1N4937 2N3762 MJ10009 MTP3055E mtp3055

    1N5825

    Abstract: diode 1N5825 N5824 1n6823 1N5824 1N5823 marking Bq sot23 1N5824 ON
    Text: 1N5823,1N5824 1N5825 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5823 and 1N5825 are Motorola Preformi Devices Designer’s Data Sheet SCHOTTKY BARRIER RECTIFIERS Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.


    OCR Scan     		PDF 1N5823 1N5824 1N5825 1N5825 diode 1N5825 N5824 1n6823 marking Bq sot23 1N5824 ON

    1N5628

    Abstract: 12115X marking AB SOD123 1N5828
    Text: 1N5826 1N5827 1N5828 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N582S and 1N5828 are Motorola Preferred Devices Designer’s Data Sheet Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.


    OCR Scan     		PDF 1N5826 1N5827 1N5828 1N582S 1N5828 DO-35 1N5628 12115X marking AB SOD123

    CL1304

    Abstract: MCL1304 38128
    Text: MOTOROLA SC -CDIODES/OPTÔ} 6367255 MOTOROLA SC 34 i>Ë"| b3b7a5S 0030120 b DIODES/OPTO 34C 38128 D SILICON ZENER DIODE DICE (continued) 1C5283 DIE NO. — SERIES LINE SOURCE — DZD500 CURRENT REGULATOR DIODE This die provides performance equal to or better than that


    OCR Scan     		PDF DZD500 1N5283 1N5296 CL1300 CL1304 1C5283 1C5283 1C5296 CL1304 MCL1304 38128

    12v dc full wave bridge rectifier

    Abstract: 5000 watt full bridge design 1N5S34
    Text: 1N5832 IN 5833 1N5834 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5832 and 1N5S34 are Motorola Preferred Devices Switchmode Power Rectifier SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.


    OCR Scan     		PDF 1N5832 1N5834 1N5S34 12v dc full wave bridge rectifier 5000 watt full bridge design

    1N5628

    Abstract: 1N5826
    Text: 1N5826 1N5827 1N5828 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5826 and 1N5628 are Motorola Preferred Devices Designer’s Data Sheet Pow er R ectifiers SCHOTTKY BA R R IE R RECTIFIERS . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.


    OCR Scan     		PDF 1N5826 1N5827 1N5828 1N5628