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    DIODE MDD 42 Search Results

    DIODE MDD 42 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MDD 42 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2x520

    Abstract: No abstract text available
    Text: MDD 312 IFRMS = 2x 520 A IFAVM = 2x 310 A VRRM = 1200-2200 V High Power Diode Modules VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Type 3 MDD 312-12N1 MDD 312-14N1 MDD 312-16N1 MDD 312-18N1 MDD 312-20N1 MDD 312-22N1 Test Conditions


    Original     		PDF 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 2x520

    Untitled

    Abstract: No abstract text available
    Text: MDD 312 IFRMS = 2x520 A IFAVM = 2x310 A VRRM = 1200-2200 V High Power Diode Modules VRSM V VRRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 3 2 3 2 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 Symbol


    Original     		PDF 2x520 2x310 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 10Transient 20100203a

    312-22N1

    Abstract: MDD312
    Text: MDD 312 IFRMS = 2x520 A IFAVM = 2x310 A VRRM = 1200-2200 V High Power Diode Modules VRSM V VRRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 3 2 3 2 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 Symbol


    Original     		PDF 2x520 2x310 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 10Transient 20100203a 312-22N1 MDD312

    527000

    Abstract: MDD312
    Text: MDD 312 IFRMS = 2x 520 A IFAVM = 2x 310 A VRRM = 1200-2200 V High Power Diode Modules VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Type 3 MDD 312-12N1 MDD 312-14N1 MDD 312-16N1 MDD 312-18N1 MDD 312-20N1 MDD 312-22N1 Test Conditions


    Original     		PDF 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 527000 MDD312

    MDD312

    Abstract: No abstract text available
    Text: MDD 312 IFRMS = 2x520 A IFAVM = 2x310 A VRRM = 1200-2200 V High Power Diode Modules VRSM VDSM V VRRM VDRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 3 2 3 2 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1


    Original     		PDF 2x520 2x310 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 10Transient MDD312

    M8x20

    Abstract: 25518N I101S MDD255 ixys mcc ixys mcc 255
    Text: MDD 255 High Power Diode Modules VRSM VDSM V VRRM VDRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 3 1 2 3 2 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM TC = 100°C; 180° sine


    Original     		PDF 2x450 2x270 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 10Transient M8x20 25518N I101S MDD255 ixys mcc ixys mcc 255

    ixys MDD 26 - 14

    Abstract: MDD 500-22N1 MDO 220-14N1 ixys MDD 172 12 DIODE 22-35 L M5 DIODE 22-35 L ixys MDD 26 14 MDD 500-12N1 ixys MDD 172 16 IXYS MCC 310
    Text: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 1 MDA 72 D8 - 11 36 l l l l l MDD 26 D8 - 2 64 l l l l l MDD 44 D8 - 5 l l l l l MDD 56 D8 - 8 l l l l l MDD 72 D8 - 11 120 l l l l l l l


    Original     		PDF

    MDD 500-22N1

    Abstract: ixys MDD 26 - 14 ixys MDD 172 12 B2U 250 S2MD 2235nm ixys MCC 700 IXYS MCC 550 mcc 550 ixys MDD 500-12N1
    Text: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 4 1999 IXYS All rights reserved MDD 26 D6-2 ● ● ● ● ● MDD 44 D6-5 95 ● ● ● ● ● MDD 56 D6-8 ● ● ● ● ●


    Original     		PDF D6-11 D6-14 D6-17 D6-20 D6-23 D6-26 D6-29 D6-32 D6-35 D6-38 MDD 500-22N1 ixys MDD 26 - 14 ixys MDD 172 12 B2U 250 S2MD 2235nm ixys MCC 700 IXYS MCC 550 mcc 550 ixys MDD 500-12N1

    E72873

    Abstract: No abstract text available
    Text: MDD 175 High Power Diode Modules IFRMS = 2x 564 A IFAVM = 2x 177 A VRRM = 2800-3400 V Preliminary data VRSM V 2900 3500 VRRM V 2800 3400 3 Type 1 3 2 2 MDD 175-28N1 MDD 175-34N1 1 E72873 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C;


    Original     		PDF 00-3400V 175-28N1 175-34N1 E72873 20091110d E72873

    ZY 180L

    Abstract: ZY 20-12 diode zy MCC MDD IXYS
    Text: MDD 175 High Power Diode Modules IFRMS = 2x 564 A IFAVM = 2x 177 A VRRM = 2800-3400 V Preliminary data VRSM V 2900 3500 VRRM V 2800 3400 3 Type 1 2 MDD 175-28N1 MDD 175-34N1 E72873 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C; VR = 0


    Original     		PDF 175-28N1 175-34N1 800-3400V E72873 Isolat0747 20121206e ZY 180L ZY 20-12 diode zy MCC MDD IXYS

    ixys mdd

    Abstract: No abstract text available
    Text: MDD 175 IFRMS = 2x 564 A IFAVM = 2x 177 A VRRM = 2800-3400 V High Power Diode Modules Preliminary data VRSM V 2900 3500 VRRM V 2800 3400 3 Type 1 3 2 2 MDD 175-28N1 MDD 175-34N1 1 E72873 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C;


    Original     		PDF 175-28N1 175-34N1 E72873 20091110d ixys mdd

    Untitled

    Abstract: No abstract text available
    Text: MDD 312 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C; VR = 0 2 E72873 Maximum Ratings 520 310 A A t = 10 ms 50 Hz t = 8.3 ms (60 Hz)


    Original     		PDF 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 E72873 20130409f

    Untitled

    Abstract: No abstract text available
    Text: MDD 312 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C; VR = 0 2 E72873 Maximum Ratings 520 310 A A t = 10 ms 50 Hz t = 8.3 ms (60 Hz)


    Original     		PDF 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 E72873 20130813g

    Untitled

    Abstract: No abstract text available
    Text: High Power Diode Modules MDD 312 IFRMS = 2 x 520 A IFAVM = 2 x 320 A VRRM = 1200 - 1800 V Preliminary data VRSM VRRM VDSM VDRM V V 1300 1500 1700 1900 1200 1400 1600 1800 IFRMS IFAVM TVJ = TVJM TC = 100°C; 180° sine IFSM TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0


    Original     		PDF 312-12io1 312-14io1 312-16io1 312-18io1

    MCD501

    Abstract: MCD501-16io1 MDC501 MDC 1200 mcd501-12io1 501-18io1 MDC501-16io1 MCD501-18io1 mdk diode MCD501-16
    Text: EXPANDED PRODUCT BRIEF Thyristor / Diode Modules Available in 8 configurations - Voltage grades 1200V-2600V Features and Benefits May 2009 Issue 3 • New bus bar design retaining standard connection footprint • Electrically isolated base plate Configurations


    Original     		PDF 200V-2600V 431-22io1 431-24io1 501-12io1 501-16io1 501-18io1 MCD501 MCD501-16io1 MDC501 MDC 1200 mcd501-12io1 501-18io1 MDC501-16io1 MCD501-18io1 mdk diode MCD501-16

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    6206a

    Abstract: mcc501 MDK630
    Text: Product Brief Thyristor & Diode Modules March 2013 – Issue 4 Features and benefits IXYS UK’s range of isolated base pressure contact thyristor and diode modules, designed to industry standard outlines is perfect for


    Original     		PDF 150A113Â ISO9001Â 6206a mcc501 MDK630

    rct Thyristor

    Abstract: No abstract text available
    Text: SKKT 132, SKKH 132 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 2 Thyristor / Diode Modules MNLO MNNO= MDNO M YRR TARR TBRR TWRR M URR TCRR T¥RR T@RR PISM Q TAR S G*2 > TURV I5 Q UW XEH LZZI TAC[RU? LZZ$ TAC[RU? LZZI TAC[TC? LZZ$ TAC[TC? LZZI TAC[T¥? LZZ$ TAC[T¥?


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SKKT 162, SKKH 162 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 2 Thyristor / Diode Modules MNLO MNNO= MDNO M XRR TARR TBRR T¥RR M URR TCRR T[RR T@RR PISM Q T@R S G*2 >TURV I5 Q UA WEH LYYI T@CZRU? LYY$ T@CZRU? LYYI T@CZTC? LYY$ T@CZTC? LYYI T@CZT[? LYY$ T@CZT[?


    Original     		PDF

    MDD312

    Abstract: No abstract text available
    Text: High Power Diode Modules MDD312 IFRMS = 2 x 520 A FAVM = 2 x 320 A V RRM = 1200-1800 V Preliminary data v RSM v DSM VRRM v DRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Symbol Type MDD 312-12io1 MDD 312-14io1 MDD 312-16io1 MDD 312-18io1 Maximum Ratings Test Conditions


    OCR Scan     		PDF MDD312 312-12io1 312-14io1 312-16io1 312-18io1 Al203-ceramic M8x16v 4bflb22b DD02blG

    MDD312

    Abstract: 312-18N1
    Text: ÖIXYS High Power Diode Modules MDD312 lFRMS = 2 x 520 A ^FAVM V RRM VRSM v VDSM VDRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Symbol ^FRMS ^FAVM ^FSM Ji2dt 3 Type rrM _ » î MDD 312-12N1 MDD 312-14N1 MDD 312-16N1 MDD 312-18N1 Test Conditions Maximum Ratings


    OCR Scan     		PDF MDD312 312-12N1 312-14N1 312-16N1 312-18N1 Al203-ceramic M8x20. SW13V DQD327S 312-18N1

    mdd 42

    Abstract: diode mdd 42 MD0500 MDD142-08N1 172-14N1 MDD72-12N1B MDD5 PAGE-42 MDD72 MDD72-08N1B
    Text: Diode Modules, Single and Double f ‘ 1 FAV = 36-500 A MDO Type FSM New 45°C 10 ms A MDD26-08N1B MDD26-12N1B MDD26-14N1B MDD 26-16N1B MDD26-18N1B 100 60 800 1200 1400 1600 1800 36 800 59 100 100 1150 100 150 1400 p 650 m iî °C 6.0 150 K/W 1.0 0.2 24 Fig. 24 TO-240 AA


    OCR Scan     		PDF O-240 MDD26-08N1B MDD26-12N1B MDD26-14N1B 26-16N1B MDD26-18N1B MDD44-08N1B 44-12N1B 44-14N1B MDD44-16N1B mdd 42 diode mdd 42 MD0500 MDD142-08N1 172-14N1 MDD72-12N1B MDD5 PAGE-42 MDD72 MDD72-08N1B

    MDD 42-12-N1

    Abstract: No abstract text available
    Text: a s e a BRO üJN/ABB s e m i c o n Netz-Dioden-Module A3 D I GDMfl3Dfl □ □ □ D l ñ S T jp» •= 1 J - Diode Modules for mains frequency Daten pro D iode/data per diode /le s caractéristiques se rapportent à 1 diode I frms V rhm Ifavm l2t 10 ms


    OCR Scan     		PDF K21-0120' K21-0120 K21-0180 K21-0265 DD165, DD220 MDD 42-12-N1

    Untitled

    Abstract: No abstract text available
    Text: DIXYS MDD310 IFRMS High Power Diode Modules ^ FAVM 2 x 480 A 2 x 305 A vRRM 800 -1600 V Type 800 1200 1400 1600 900 1300 1500 1700 Maximum Ratings A 480 A 305 Symbol Test Conditions Urms Uavm TVJ — Tc = 100°C; 180° sine ^FSM TVJ = 45°C; VR= 0 t = 10 ms 50 Hz , sine


    OCR Scan     		PDF MDD310