BAS19
Abstract: BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR
Text: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol
|
Original
|
BAS19LT1,
BAS20LT1,
BAS21LT1
BAS19LT1
BAS20LT1
BAS19
BAS20
BAS21
r14525
BAS19
BAS19LT1
BAS20
BAS20LT1
BAS21
BAS21LT1
sot23 marking JR
|
PDF
|
BAS19LT1
Abstract: sot-23 MARKING CODE JS BAS19 BAS20 BAS20LT1 BAS21 BAS21LT1 SOT23 Marking JX marking 556c
Text: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol
|
Original
|
BAS19LT1,
BAS20LT1,
BAS21LT1
BAS19LT1
BAS20LT1
BAS19
BAS20
BAS21
r14525
BAS19LT1
sot-23 MARKING CODE JS
BAS19
BAS20
BAS20LT1
BAS21
BAS21LT1
SOT23 Marking JX
marking 556c
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LL4148 Small Signal Diode Cathode Band COLOR BAND MARKING 1ST BAND Black SOD80 The 1st Band indicates the cathode band the 1st Band indicates the cathod Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity Color Band Marking
|
Original
|
LL4148
|
PDF
|
1N4148WT
Abstract: 1N4448WT marking codes fairchild 1N914BWT 914BWT FAIRCHILD DIODE Fairchild marking change diode Fairchild Diode Marking Change
Text: 1N4148WT / 1N4448WT / 1N914BWT High Conductance Fast Switching Diode Features • • • • • • • Device Marking Code Device Type Device Marking 1N4148WT E1 1N4448WT E2 1N914BWT E3 Fast Switching Diode Trr <4.0nsec Flat Lead, Surface Mount Device Under 0.70mm Height
|
Original
|
1N4148WT
1N4448WT
1N914BWT
1N4148WT
1N4448WT
OD523F
OD-523F
marking codes fairchild
1N914BWT
914BWT
FAIRCHILD DIODE
Fairchild marking change diode
Fairchild Diode Marking Change
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.
|
Original
|
1N5408
|
PDF
|
sod-23
Abstract: diode sod23 SOD 23 marking a7 SOD23 marking A4 marking A1 diode marking a4 MARKING A4 transistor SILICON SWITCHING DIODE
Text: BAV70 SWITCHING DIODE PRODUCT SUMMARY SOT-23 SOD-23 Plastic-Encapsulate Diodes FEATURES Fast Switching Speed For General Purpose Switching Applications High Conductance BAW56 Marking: A1 BAV70 Marking: A4 BAV99 Marking: A7 Pb-free; RoHS-compliant MAXIMUM RATINGS @TA=25°C
|
Original
|
BAV70
OT-23
OD-23
BAW56
BAV70
BAV99
sod-23
diode sod23
SOD 23
marking a7
SOD23
marking A4
marking A1
diode marking a4
MARKING A4 transistor
SILICON SWITCHING DIODE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: <s SC311 0.5A Outline Drawing FAST RECOVERY DIODE I Marking • Surface mount device • High voltage by mesa design • High reliability I - CATHODE MARKING - SYMBOL • HC 1 14 Applications • High speed switching - MONTH
|
OCR Scan
|
SC311
PartNoSC311-4
SC311-6
|
PDF
|
Collmer SC
Abstract: 0003B55 marking WM diode
Text: SCOI 5 1.0A <§ Outline Drawing GENERAL USE RECTIFIER DIODE • Features Marking • Surface mount device • High reliability I -I nuL MARKING -CATHODE -SYMBOL -J S Z Applications I • General purpose rectifier applications —
|
OCR Scan
|
SC015-6
0003b55
SC015
0Q03b5b
Collmer SC
marking WM diode
|
PDF
|
SC211
Abstract: SC211-2 SC211-4
Text: <§ SC211 0.8A Outline Drawing FAST RECOVERY DIODE I Features Marking • Surface mount device • High voltage by mesa design • High reliability -CATHODE MARKING SYMBOL GFl I Applications •MONTH 14 • High speed switching ■LOT NO. YEAR Symbol GF
|
OCR Scan
|
SC211
SC211-2
SC211-4
SC211
SC211-4
|
PDF
|
1N4148WS
Abstract: No abstract text available
Text: Diode Silicon Epitaxial Switching Diode Feature: • Fast Switching Diode. Marking 1N4148WS= A2 with cathode band. Absolute Maximum Ratings Description Symbol Value Continuous Reverse Voltage VR 75 VRRM 100 *IF AV 150 Surge Forward Current t <1s and Tj = 25°C
|
Original
|
1N4148WS=
1N4148WS
|
PDF
|
MAM387
Abstract: DIODE smd marking CODE PG
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D049 BB157 VHF variable capacitance diode Preliminary specification 2002 Feb 06 Philips Semiconductors Preliminary specification VHF variable capacitance diode BB157 MARKING FEATURES • High linearity TYPE NUMBER
|
Original
|
M3D049
BB157
BB157
OD323
SCA73
613514/01/pp7
MAM387
DIODE smd marking CODE PG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SC016 1.0A (200V to 600V / 1.0A ) Outline drawings GENERAL USE RECTIFIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35 ±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Marking Surface-mount device High reliability BB Applications Type name Abridged
|
Original
|
SC016
SC016-2
SC016-4
SC016-6
|
PDF
|
reco relay
Abstract: No abstract text available
Text: SC016 1.0A (200V to 600V / 1.0A ) Outline drawings GENERAL USE RECTIFIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35 ±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Marking Surface-mount device High reliability BB Applications Type name Abridged
|
Original
|
SC016
SC016-2
SC016-4
SC016-6
reco relay
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)
|
Original
|
VBUS051BD-HD1
LLP1006-2L
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)
|
Original
|
VBUS051BD-HD1
LLP1006-2L
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
VBUS05L1-DD1-G-08
Abstract: No abstract text available
Text: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking
|
Original
|
VBUS05L1-DD1
LLP1006-2M
LLP1006-2M
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
VBUS05L1-DD1-G-08
|
PDF
|
marking ya
Abstract: 3tb 40 15X15 SC802-04 marking 6Ct marking eb sc802
Text: SC802-04 1 .OA • Outline Drawing SCHOTTKY BARRIER DIODE ■ Features I Marking • Surface mount device • Lo w V f -CATHODE MARKING - SYMBOL • Super high speed switching • High reliability by planer design /I ■ EB 1 141 - MONTH
|
OCR Scan
|
SC802-04
500ns,
marking ya
3tb 40
15X15
SC802-04
marking 6Ct
marking eb
sc802
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)
|
Original
|
VBUS051BD-HD1
LLP1006-2L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)
|
Original
|
VBUS051BD-HD1
LLP1006-2L
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking
|
Original
|
VBUS05L1-DD1
LLP1006-2M
LLP1006-2M
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
3vf4
Abstract: No abstract text available
Text: RECTRON BAV99 SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE FEATURES Silicon epitaxial planar diode Fast switching Surface mounting device "A7" Device marking .020 0.50 .070 (1.78) * Weight : apporx. 0.008g .110 (2.80) .081 (2.04) .119 (3.04)
|
Original
|
BAV99
OT-23
150mA
100uA
3vf4
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SC016 1.0A (200V to 600V / 1.0A ) Outline drawings GENERAL USE RECTIFIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35 ±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Marking Surface-mount device High reliability BB Applications Type name Abridged
|
Original
|
SC016
SC016-2
SC016-4
SC016-6
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking
|
Original
|
VBUS05L1-DD1
LLP1006-2M
LLP1006-2M
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
A2 DIODE SMD CODE MARKING
Abstract: PMBD353 SMD marking CODE 4F pj-25 diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PMBD353 Schottky barrier double diode Product specification Supersedes data of 1999 May 25 2001 Oct 15 Philips Semiconductors Product specification Schottky barrier double diode FEATURES PMBD353 MARKING
|
Original
|
M3D088
PMBD353
SCA73
613514/04/pp8
A2 DIODE SMD CODE MARKING
PMBD353
SMD marking CODE 4F
pj-25 diode
|
PDF
|
