marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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philips bav23s
Abstract: MARKING L31 SMD BAV23S L31 l31 sot23 SMD L31 BAV23S Philips smd code marking sot23 marking L31 PHILIPS
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV23S General purpose double diode Product specification Supersedes data of 1999 May 05 2001 Oct 12 Philips Semiconductors Product specification General purpose double diode FEATURES BAV23S MARKING
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M3D088
BAV23S
SCA73
613514/05/pp8
philips bav23s
MARKING L31 SMD
BAV23S L31
l31 sot23
SMD L31
BAV23S
Philips smd code marking sot23
marking L31 PHILIPS
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Untitled
Abstract: No abstract text available
Text: DSA 15 IM 200 UC preliminary V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number 1 2 3 Marking on Product: SFMAUI Backside: cathode Applications: Features / Advantages:
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O-252
60747and
20110721a
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IXYS DSA 12
Abstract: No abstract text available
Text: DSA 15 IM 200 UC preliminary V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number DSA 15 IM 200 UC 1 2 3 Marking on Product: SFMAUI Backside: cathode Features / Advantages:
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O-252
60747and
20110721a
IXYS DSA 12
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6P060AS
Abstract: No abstract text available
Text: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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DSEP6-06AS
6P060AS
6-06AS
60747and
20110915a
6P060AS
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DIODE MARKING CODE B3
Abstract: DIODE MARKING B4 marking B4 diode l4 marking code diode DSEP6-06BS diode B4 252 diode marking b2
Text: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number DSEP6-06BS 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Applications:
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DSEP6-06BS
Recti10
60747and
20110915a
DIODE MARKING CODE B3
DIODE MARKING B4
marking B4 diode
l4 marking code diode
DSEP6-06BS
diode B4 252
diode marking b2
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Untitled
Abstract: No abstract text available
Text: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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DSEP6-06BS
60747and
20110915a
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6P060AS
Abstract: No abstract text available
Text: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number DSEP6-06AS 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DSEP6-06AS
6P060AS
6-06AS
60747and
20110915a
6P060AS
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DPG10I300PA
Abstract: No abstract text available
Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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60747and
20090323a
DPG10I300PA
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03866
Abstract: 07062
Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:
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60747and
20090323a
03866
07062
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PDF
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marking l30
Abstract: 1N4150 BAV23S MMBD1201 MARKING W2 SOT23 SOT23 DIODE marking CODE AV wA MARKING SOT-23 SERIES DIODE L30 SOT23 sot-23 Marking 3p wc diode sot23
Text: BAV23S BAV23S Top Marking: L30 3 2 Connection Diagram: 3 2 1 1 High Voltage General Purpose Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units IF AV Average Rectified Current 200 mA IFSM Non-repetitive Peak Forward Surge Current
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BAV23S
marking l30
1N4150
BAV23S
MMBD1201
MARKING W2 SOT23
SOT23 DIODE marking CODE AV
wA MARKING SOT-23 SERIES DIODE
L30 SOT23
sot-23 Marking 3p
wc diode sot23
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ultra fast recovery time diode 100ma
Abstract: No abstract text available
Text: BAV23S BAV23S Top Marking: L30 3 2 Connection Diagram: 3 2 1 1 High Voltage General Purpose Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units IF AV Average Rectified Current 200 mA IFSM Non-repetitive Peak Forward Surge Current
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BAV23S
ultra fast recovery time diode 100ma
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SMD L31
Abstract: smd diode marking 9 ba MARKING- L31 BAV23S l31 BAV23S MARKING L31 SMD
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE DESCRIPTION BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope
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ISO/TS16949
BAV23S
OT-23
BAV23S
C-120
SMD L31
smd diode marking 9 ba
MARKING- L31
BAV23S l31
MARKING L31 SMD
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SMD L31
Abstract: MARKING L31 SMD SOT-23 marking l31 BAV23S l31 BAV23S marking L31 SOT23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE DESCRIPTION BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope
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BAV23S
OT-23
BAV23S
C-120
SMD L31
MARKING L31 SMD
SOT-23 marking l31
BAV23S l31
marking L31 SOT23
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MARKING L31 SMD
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE DESCRIPTION BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope
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BAV23S
OT-23
BAV23S
C-120
MARKING L31 SMD
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MARKING L31 SMD
Abstract: BAV23S l31
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE DESCRIPTION BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope
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Original
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BAV23S
OT-23
BAV23S
C-120
MARKING L31 SMD
BAV23S l31
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Untitled
Abstract: No abstract text available
Text: DLA 10 IM 800 UC advanced V RRM = I FAV = VF = High Efficiency Standard Rectifier Single Diode 800 V 10 A 1.01 V Part number 1 2 3 Marking on Product: MARLUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current
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O-252
60747and
20070320a
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PDF
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Untitled
Abstract: No abstract text available
Text: DSEP 6 Fast Recovery Epitaxial Diode FRED IFAVM = 6 A VRRM = 600 V trr = 20 ns Preliminary Data VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06AS C A TO-252AA (DPAK) Cathode 6P060AS Cathode (Flange) Anode Conditions Maximum Ratings IFRMS IFAVM ①
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6-06AS
O-252AA
6P060AS
D-68623
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Untitled
Abstract: No abstract text available
Text: DLA 10 IM 800 UC advanced V RRM = I FAV = VF = High Efficiency Standard Rectifier Single Diode 800 V 10 A 1.01 V Part number DLA 10 IM 800 UC 1 2 3 Marking on Product: MARLUI Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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O-252
60747and
20070320a
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PDF
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Untitled
Abstract: No abstract text available
Text: <s SC211 0.8A Outline Drawing FAST RECOVERY DIODE I C\J L35t<M I Features I 2 MM. ! I ' c ,+ M ' I US 04 4 I I y fO * Marking • Surface mount device • High voltage by mesa design • High reliability CATHODE MARKING SYMBOL /- I Applications • High speed switching
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OCR Scan
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SC211
SC211-2
SC211-4
00G3b52
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PDF
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Untitled
Abstract: No abstract text available
Text: SC802-04 1 .OA SCHOTTKY BARRIER DIODE Outline Drawing I 3' / j r - f x a % tO C\J £ L l3 5 iM 12 MM. 1 4 iz t02 135 04 _ >04 5.1-ai • Features I Marking • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design
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OCR Scan
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SC802-04
0DG3b37
0G03b3Ã
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