kje vishay
Abstract: BAV99 VISHAY SOT23 DIODE marking CODE Data KJE marking JE SO 6 KJE SOT-23 diode marking KJE BAV99 BAV99-GS08 Diode SOT-23 marking JE SOT23 JE
Text: BAV99 VISHAY Vishay Semiconductors Dual Switching Diode \ 3 Features • Fast switching speed • High conductance • Surface mount package ideally suited for automatic insertion 1 • Connected in series 2 17435 Marking: KJE, JE Packaging Codes/Options:
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BAV99
E8/10
OT-23
BAV99-GS08
OT-23
D-74025
19-Feb-03
kje vishay
BAV99 VISHAY
SOT23 DIODE marking CODE Data KJE
marking JE SO 6
KJE SOT-23
diode marking KJE
BAV99
BAV99-GS08
Diode SOT-23 marking JE
SOT23 JE
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Untitled
Abstract: No abstract text available
Text: BAV99 VISHAY Vishay Semiconductors Dual Switching Diode Features 3 • Fast switching speed • High conductance • Surface mount package ideally suited for automatic insertion • Connected in series 1 Mechanical Data 2 18109 Marking: JE Packaging Codes/Options:
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BAV99
OT-23
30k/box
30k/box
BAV99
OT-23
D-74025
15-Jul-03
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Untitled
Abstract: No abstract text available
Text: ERA22 0.5A (200V to 1000V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE ø2.5 ø0.56 3.0 28 MIN. 28 MIN. Features Ultra small package, possible for 5mm pitch automatic insertion Marking High voltage by mesa design Color code : Green High reliability
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ERA22
ERA22
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general purpose diode marking code -08
Abstract: No abstract text available
Text: ERA15 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø2.5 ø0.56 3.0 28 MIN. 28 MIN. Features Marking Ultra small pakage, possible for 5mm pitch automatic insertion. High reliability Color code : White Applications 02 Voltage class
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ERA15
m10ms
general purpose diode marking code -08
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Untitled
Abstract: No abstract text available
Text: Rectiier Diode Surface Mounting Device Single Diode OUTLINE M1FE40 400V 2A • • • Unit : mm Weight : 0.027g typ. Package M1F 2.8 カソードマーク Cathode mark ① SMD E88 1.8 ＋① ②− ② ロット記号（例） Date code 品名略号 Type No.
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M1FE40
J534-1
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smd diode marking JC
Abstract: SMD MARKING CODE 103 SMD MARKING CODE 2A DIODE SMD 10A smd diode marking code 2a smd diode marking 2a SMD MARKING CODE 39 diode smd marking BUF SMD DIODE MARKING 14 smd diode marking ja
Text: 面実装デバイス 単体型 Rectifier Diode Surface Mounting Device Single Diode •外観図 OUTLINE M1FE40 Unit : mm Weight : 0.027g （typ.） Package：M1F 400V 2A 2.8 カソードマーク Cathode mark 特長 E88 ① • 小型 SMD • 耐湿性に優れ高信頼性
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M1FE40
J534-1
smd diode marking JC
SMD MARKING CODE 103
SMD MARKING CODE 2A
DIODE SMD 10A
smd diode marking code 2a
smd diode marking 2a
SMD MARKING CODE 39
diode smd marking BUF
SMD DIODE MARKING 14
smd diode marking ja
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sgs Thomson Thyristor
Abstract: MDS80
Text: MDS80 DIODE / THYRISTOR MODULE . . PRELIMINARY DATA FEATURES VDRM = VRRM UP TO 1200 V IT AV = 55 A HIGH SURGE CAPABILITY INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS) (UL recognized : E81734) A G I K DESCRIPTION The MDS80 family are constitued of one rectifier
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MDS80
E81734)
MDS80
sgs Thomson Thyristor
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Diode STTH
Abstract: 12363 TTP250
Text: STTH10002 Ultrafast recovery diode Datasheet production data Features • Very low forward losses ■ Low recovery time ■ High surge current capability ■ Insulated package – Insulating voltage = 2500 V rms – Capacitance = 45 pF ■ Complies with UL standards File ref: E81734
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STTH10002
E81734)
STTH10002TV1
STTH10002
STTH10002TV2
Diode STTH
12363
TTP250
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090N03L
Abstract: 090N03
Text: Type IPD090N03L G E8177 OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters VDS 30 V RDS on ,max 9 mW ID 40 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level
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IPD090N03L
E8177
PG-TO252-3-11
090N03L
090N03L
090N03
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090n03l
Abstract: IPD090N03LGE8177 E8177 IPD090N03L JESD22 PG-TO252-3-11
Text: Type IPD090N03L G E8177 OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 9 mΩ ID 40 A 1) • Qualified according to JEDEC for target applications
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IPD090N03L
E8177
PG-TO252-3-11
090N03L
090n03l
IPD090N03LGE8177
E8177
JESD22
PG-TO252-3-11
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M1FE40
Abstract: No abstract text available
Text: 面実装デバイス 単体型 Rectifier Diode Surface Mounting Device Single Diode •外観図 OUTLINE M1FE40 Unit : mm Weight : 0.027g （typ.） Package：M1F 400V 2A 2.8 カソードマーク Cathode mark 特長 E88 ① • 小型 SMD • 耐湿性に優れ高信頼性
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M1FE40
M1FE40
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11n60c3
Abstract: No abstract text available
Text: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO220FP • Periodic avalanche rated PG-TO262 PG-TO220
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SPP11N60C3
SPI11N60C3,
SPA11N60C3,
SPA11N60C3
E8185
PG-TO220FP
PG-TO262
PG-TO220
P-TO220-3-31
PG-TO-220-3-31
11n60c3
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11n60c3
Abstract: SPA11N60C3 11N60C
Text: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220
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SPP11N60C3
SPI11N60C3,
SPA11N60C3,
SPA11N60C3
E8185
P-TO220-3-31
PG-TO220FP
PG-TO262
PG-TO220
PG-TO-220-3-31
11n60c3
11N60C
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11n60c3
Abstract: transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3 E8185
Text: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220
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SPP11N60C3
SPI11N60C3,
SPA11N60C3,
SPA11N60C3
E8185
P-TO220-3-31
PG-TO220FP
PG-TO262
PG-TO220
PG-TO-220-3-31
11n60c3
transistor 11n60c3
SPA11N60C3E8185
SPI11N60C3
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11n60c3
Abstract: SPA11N60C3E8185 11N60C SPA11N60C3 equivalent SPA11N60C3 11N60 SPI11N60C3 transistor 11n60c3 Q67040-S4395 SPP11N60C3
Text: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220
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SPP11N60C3
SPI11N60C3,
SPA11N60C3,
SPA11N60C3
E8185
PG-TO220FP
PG-TO262
PG-TO220
P-TO220-3-31
PG-TO-220-3-31
11n60c3
SPA11N60C3E8185
11N60C
SPA11N60C3 equivalent
11N60
SPI11N60C3
transistor 11n60c3
Q67040-S4395
SPP11N60C3
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Untitled
Abstract: No abstract text available
Text: STGIPL20K60 SLLIMM small low-loss intelligent molded module IPM, 3-phase inverter - 20 A, 600 V short-circuit rugged IGBT Datasheet - production data • Isolation rating of 2500 Vrms/min • 5 kΩ NTC for temperature control • UL Recognized: UL1557 file E81734
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STGIPL20K60
UL1557
E81734
SDIP-38L
AM01193v1
DocID018946
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Untitled
Abstract: No abstract text available
Text: ESD0P8RFL RF ESD Protection Diodes • ESD protection of RF antenna / interfaces or ultra high speed data lines acc. to: IEC61000-4-2 ESD : ± 20 KV (air / contact) • Very low line capacitance: 0.8 pF @ 1 GHz ( 0.4 pF per diode) • Ultra low series inductance: 0.4 nH per diode
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IEC61000-4-2
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marking 6d
Abstract: IPP147N12N
Text: IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G "%&$!"# 3 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! ' V ;I )*( K R - @ ?>2 I ),&/ Z" -. I; 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#
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IPB144N12N3
IPI147N12N3
IPP147N12N3
marking 6d
IPP147N12N
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marking 9D
Abstract: sd marking 8H IPP06CN10N PG-TO220-3 A6c DIODE
Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G "%&$!"# 2 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! ' V ;I )( K R - @ ?>2 I.) .&* Z" I; )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#
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IPB06CN10N
IPI06CN10N
IPP06CN10N
8976BF6
marking 9D
sd marking 8H
PG-TO220-3
A6c DIODE
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IPB230N06L3
Abstract: IPP230N06L3 G s4si
Text: IPB230N06L3 G IPP230N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD V 9I . K R 9I"\[#$ZNe *+ Z" I9 +( 6 R I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) '
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IPB230N06L3
IPP230N06L3
76BF6?
IPP230N06L3 G
s4si
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marking 6d
Abstract: IPD110N12N3 G
Text: IPD110N12N3 G IPS110N12N3 G "%&$!"#TM3Power-Transistor Features Product Summary R 492 ?6= ?@ C>2 =6G6= V ;I *( K R ;I"\[#$>2 I ) Z" I; /- 7 R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) ' R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[# R U @ A6C2 E:?8 E6>A6C2 E
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IPD110N12N3
IPS110N12N3
8976BF6
marking 6d
IPD110N12N3 G
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marking 6d
Abstract: IPP04CN10N G diode 6e
Text: IPB04CN10N G IPI04CN10N G IPP04CN10N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) ' I; )( K +&1 Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#
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IPB04CN10N
IPI04CN10N
IPP04CN10N
marking 6d
IPP04CN10N G
diode 6e
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BAR90-07LRH
Abstract: IEC61000-4-4 No103
Text: ESD0P8RFL RF ESD Protection Diodes • ESD protection of RF antenna / interfaces or ultra high speed data lines acc. to: IEC61000-4-2 ESD : ± 20 kV (air / contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 10 A (8/20 µs) • Very low line capacitance: 0.8 pF @ 1 GHz
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IEC61000-4-2
IEC61000-4-4
IEC61000-4-5
BAR90-07LRH
IEC61000-4-4
No103
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Untitled
Abstract: No abstract text available
Text: 5 7 . SGS-THOMSON MDS80 IM DIODE / THYRISTOR MODULE PRELIMINARY DATA FEATURES • Vdrm = V rrm UP TO 1200 V = 55A ■ HIGH SURGE CAPABILITY . INSULATED PACKAGE: INSULATING VOLTAGE 2500 V RMS (UL recognized: E81734) ■ It (AV) DESCRIPTION The MDS80 famly are constitued of one rectifier
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OCR Scan
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MDS80
E81734)
MDS80
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