712 DIODE marking sot23
Abstract: No abstract text available
Text: TVS Diode Arrays SPA Diodes Diodes) General Purpose ESD Protection - SM712 SM712 Series 600W Asymmetrical TVS Diode Array RoHS Pb GREEN Description The SM712 TVS Diode Array is designed to protect RS-485 applications with asymmetrical working voltages (-7V to
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SM712
SM712
RS-485
IEC61000-4-2
8/20us
IEC61000-4-5)
IEC61000-4-2,
30k55
712 DIODE marking sot23
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Untitled
Abstract: No abstract text available
Text: SiA907EDJT Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.057 at VGS = - 4.5 V - 4.5a 0.095 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SiA907EDJT
SC-70
2002/95/EC
SC-70-6L-Dual
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SiA907EDJT Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.057 at VGS = - 4.5 V - 4.5a 0.095 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SiA907EDJT
SC-70
2002/95/EC
SC-70-6L-Dual
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiA907EDJT Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.057 at VGS = - 4.5 V - 4.5a 0.095 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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SiA907EDJT
SC-70
2002/95/EC
SC-70-6L-Dual
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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diode marking dmx
Abstract: forward smps 12v
Text: PD - 94084B IRFB17N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. ID 0.28Ω 16A 500V Features and Benefits
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94084B
IRFB17N50L
O-220AB
diode marking dmx
forward smps 12v
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94084B IRFB17N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. ID 0.28Ω 16A 500V Features and Benefits
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94084B
IRFB17N50L
O-220AB
08-Mar-07
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irfb17n50l
Abstract: No abstract text available
Text: PD - 94084B IRFB17N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. ID 0.28Ω 16A 500V Features and Benefits
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94084B
IRFB17N50L
12-Mar-07
irfb17n50l
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Untitled
Abstract: No abstract text available
Text: MA2418Y10000000 N-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2418Y1 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load
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MA2418Y10000000
MA2418Y1
OT323
SC-70-3L
D061009
OT-323
3000pcs
15000pcs
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Untitled
Abstract: No abstract text available
Text: MA2417C10000000 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2417C1 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load
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MA2417C10000000
MA2417C1
OT363
SC-70-6L
D032610
OT-363
3000pcs
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PDF
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Untitled
Abstract: No abstract text available
Text: MA2518C10000000 Dual N-Ch 20V Fast Switching MOSFET s General Description Product Summery The MA2518C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load
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MA2518C10000000
MA2518C1
OT363
SC-70-6L
D032610
OT-363
3000pcs
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PDF
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Untitled
Abstract: No abstract text available
Text: MA2417Y10000000 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2417Y1 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load
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MA2417Y10000000
MA2417Y1
OT323
SC-70-3L
D032610
OT-323
3000pcs
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PDF
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Untitled
Abstract: No abstract text available
Text: N-Ch General Description MA2418C1000000 0 Fast Switching MOSFETs 20V Product Summery The MA2418C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load
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MA2418C1000000
MA2418C1
OT363
SC-70-6L
D032610
OT-363
3000pcs
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PDF
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Untitled
Abstract: No abstract text available
Text: MA2517C10000000 Dual P-Ch 20V Fast Switching MOSFET s General Description Product Summery The MA2517C1 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load
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MA2517C10000000
MA2517C1
OT363
SC-70-6L
D032610
OT-363
3000pcs
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PDF
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Untitled
Abstract: No abstract text available
Text: MA2608N80000000 N-Ch and P-Ch Fast Switching MOSFE Ts General Description Product Summery The MA2608N8 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and
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MA2608N80000000
MA2608N8
D020210
3000pcs
15000pcs
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Untitled
Abstract: No abstract text available
Text: MA2415SN8000000 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2415SN8 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and
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MA2415SN8000000
MA2415SN8
D020210
3000pcs
15000pcs
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Untitled
Abstract: No abstract text available
Text: MA2411SN8000000 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2411SN8 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and
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MA2411SN8000000
MA2411SN8
D020210
3000pcs
15000pcs
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Untitled
Abstract: No abstract text available
Text: MB07N60F0000000 N-Ch 600V Fast Switching MOSFETs General Description Product Summery The MB07N60F is the highest performance N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter
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MB07N60F0000000
MB07N60F
O220F
D020210
O-220F
50pcs
1000pcs
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Untitled
Abstract: No abstract text available
Text: MA2403C10000000 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2403C1 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load
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MA2403C10000000
MA2403C1
OT363
SC-70-6L
D032610
OT-363
3000pcs
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PDF
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Untitled
Abstract: No abstract text available
Text: MA2605S10000000 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The MA2605S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and
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MA2605S10000000
MA2605S
D020210
3000pcs
6000pcs
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Untitled
Abstract: No abstract text available
Text: MA2605V10000000 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The MA2605V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and
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MA2605V10000000
MA2605V
D032610
3000pcs
15000pcs
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Untitled
Abstract: No abstract text available
Text: MA2604V10000000 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The QM2604V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and
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MA2604V10000000
QM2604V
D032610
3000pcs
15000pcs
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IRF7403 equivalent
Abstract: marking dmx diode c255
Text: PD -9.1562A International IOR Rectifier IRF9410 HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses • Fully Avalanche Rated V dss ^D S o n = 30V
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OCR Scan
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IRF9410
IRF7403
IRF7413
IRF7603
C-255
IRF7403 equivalent
marking dmx diode
c255
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IRF4905 equivalent
Abstract: equivalent of irf4905 rs 307 rectifier equivalent of mosfet irf4905 marking dmx diode IRF4905
Text: PD - 9.1526A International IQR Rectifier IRFI4905 HEXFET Power M O SFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4,8mm • P-Channel • Fully Avalanche Rated V dss = -55V
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OCR Scan
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IRFI4905
O-220
IRF4905 equivalent
equivalent of irf4905
rs 307 rectifier
equivalent of mosfet irf4905
marking dmx diode
IRF4905
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Untitled
Abstract: No abstract text available
Text: PD-91902 International IO R Rectifier SMPS MosFET IR F 7 3 0 A HEXFET Power MOSFET Applications • • • Switch Mode Power Supply SM PS Uninterruptable Power Supply High speed pow er switching V dss 400V Rds(on) max Id 1.0i2 5.5A Benefits • Low Gate Charge Qg results in Simple
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OCR Scan
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PD-91902
AN1001)
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