VISHAY diode MARKING EG
Abstract: No abstract text available
Text: VBUS051BD-HD1 Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • • • • 1 2 20856 20855 MARKING example only • XY • • • 21121 Bar = cathode marking Y = type code (see table below) X = date code Ultra compact LLP1006-2L package
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VBUS051BD-HD1
LLP1006-2L
2002/95/EC
2002/96/EC
11-Mar-11
VISHAY diode MARKING EG
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Untitled
Abstract: No abstract text available
Text: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)
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PDF
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VBUS051BD-HD1
LLP1006-2L
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)
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Original
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PDF
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VBUS051BD-HD1
LLP1006-2L
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)
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Original
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PDF
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VBUS051BD-HD1
LLP1006-2L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)
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Original
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PDF
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VBUS051BD-HD1
LLP1006-2L
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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dual npn 500ma
Abstract: CTLM1034-M832D CTLM1074-M832D TLM832D
Text: CTLM1034-M832D MULTI DISCRETE MODULE SURFACE MOUNT LOW VCE SAT SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE TM Top View Bottom View TLM832D CASE MARKING CODE: CFC APPLICATIONS • Switching Circuits • DC / DC Converters • LCD Backlighting
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CTLM1034-M832D
TLM832D
CTLM1034-M832D
100mA
500mA
09-August
dual npn 500ma
CTLM1074-M832D
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CTLM1034-M832D
Abstract: CTLM1074-M832D TLM832D 10V 10a Schottky Diode
Text: CTLM1074-M832D MULTI DISCRETE MODULE SURFACE MOUNT LOW VCE SAT SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE TM Top View Bottom View TLM832D CASE MARKING CODE: CFD APPLICATIONS • Switching Circuits • DC / DC Converters • LCD Backlighting
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CTLM1074-M832D
TLM832D
CTLM1074-M832D
100mA
500mA
09-August
CTLM1034-M832D
10V 10a Schottky Diode
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Untitled
Abstract: No abstract text available
Text: VCUT0505B-HD1 Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code Y = type code (see table below)
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VCUT0505B-HD1
LLP1006-2L
LLP1006-2L
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VCUT0505B-HD1 Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code Y = type code (see table below)
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VCUT0505B-HD1
LLP1006-2L
LLP1006-2L
2002/95/EC
2002/96/EC
11-Mar-11
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lmsp54c
Abstract: LMTP33AA-148 "RF diode" SP AA097 SWITCHPLEXER LMSP43AA-191 murata microwave modules LMSP54AA-097 AA191 LMSP54CA-141
Text: Microwave Modules RF Diode Switches RF Diode Switches 0.7±0.2 1.8±0.2 2.2±0.1 0.4±0.2 4.9±0.3 Pin 1 Marking 8 Manufacturer's Name Code (4) 0.1±0.1 3.2±0.2 (1) (2) (3) (7) (6) (5) 0.4±0.2 (1) : Rx (2)(4)(8) : GND (3) : Tx (5) : Vc1 (6) : ANT (7) : Vc2
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LMSW43CA-218
LMTP33AA-148
lmsp54c
LMTP33AA-148
"RF diode"
SP AA097
SWITCHPLEXER
LMSP43AA-191
murata microwave modules
LMSP54AA-097
AA191
LMSP54CA-141
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aa191
Abstract: LMSW43CA-218 murata SAW filter marking code ha165 MURATA TRIPLEXER GSM1800
Text: Microwave Modules RF Diode Switches RF Diode Switches 0.7±0.2 1.8±0.2 2.2±0.1 0.4±0.2 4.9±0.3 Pin 1 Marking 8 Manufacturer's Name Code (4) 0.1±0.1 3.2±0.2 (1) (2) (3) (7) (6) (5) 0.4±0.2 (1) : Rx (2)(4)(8) : GND (3) : Tx (5) : Vc1 (6) : ANT (7) : Vc2
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LMSW43CA-218
aa191
LMSW43CA-218
murata SAW filter marking code
ha165
MURATA TRIPLEXER
GSM1800
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LMSP43CA-309
Abstract: murata SAW filter marking code LMTP33AA-148 GSM1800
Text: Microwave Modules RF Diode Switches RF Diode Switches 0.7±0.2 1.8±0.2 2.2±0.1 0.4±0.2 4.9±0.3 Pin 1 Marking 8 Manufacturer's Name Code (4) 0.1±0.1 3.2±0.2 (1) (2) (3) (7) (6) (5) 0.4±0.2 (1) : Rx (2)(4)(8) : GND (3) : Tx (5) : Vc1 (6) : ANT (7) : Vc2
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LMSW43CA-218
LMSP43CA-309
murata SAW filter marking code
LMTP33AA-148
GSM1800
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VCUT07B1-HD1
Abstract: VCUT07B1
Text: VCUT07B1-HD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code
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VCUT07B1-HD1
LLP1006-2L
LLP1006-2L
2011/65/EU
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
VCUT07B1-HD1
VCUT07B1
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Untitled
Abstract: No abstract text available
Text: VCUT07B1-HD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code
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Original
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VCUT07B1-HD1
LLP1006-2L
LLP1006-2L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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CLL2003
Abstract: No abstract text available
Text: Central" C LL2003 Semiconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL2003 type is a silicon switching diode manufactured by the epitaxialplanar process, designed for applications requiring high voltage capability. Marking Code: Cathode band.
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CLL2003
OD-80
TheCENTRALSEMICONDUCTORCLL2003
CHARACTERISTIC250
100HA
100mA
200mA
G001755
000175b
CLL2003
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CLL2003
Abstract: JLA MARKING CODE
Text: CLL2003 HIGH VOLTAGE SWITCHING DIODE Central Sem iconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL2003 type is a silicon switching diode manufactured by the epitaxialplanar process, designed for applications requiring high voltage capability. Marking Code: Cathode band.
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CLL2003
OD-80
CLL2003
100HA
100mA
200mA
JLA MARKING CODE
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Untitled
Abstract: No abstract text available
Text: Central" CLL2003 Sem iconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL2003 type is a silicon switching diode manufactured by the epitaxialplanar process, designed for applications requiring high voltage capability. Marking Code: Cathode band.
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OCR Scan
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CLL2003
100mA
200mA
100i2
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Untitled
Abstract: No abstract text available
Text: Central" CLL2003 sem iconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEM ICONDUCTOR CLL2003 type is a silicon switching diode manufactured by the epitaxialplanar process, designed for applications requiring high voltage capability. Marking Code: Cathode band.
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OCR Scan
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PDF
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CLL2003
100mA
200mA
100i2
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marking code diode 0t
Abstract: No abstract text available
Text: FM ^^ÊÊÊjÊÊÊ^ CLL2003 HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL2003 type is a silicon switching diode manufactured by the epitaxialplanar process, designed for applications requiring high voltage capability. Marking Code: Cathode band.
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CLL2003
100mA
200mA
marking code diode 0t
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diode rectifier siemens
Abstract: No abstract text available
Text: SIEMENS BAT 62-02W Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies ESD: Electrostatic discharge sensitive device, observe handling precaution BAT 62-02W L 1 =C Q62702-A1028 h Pin Configuration < Marking Ordering Code CM Type
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2-02W
2-02W
Q62702-A1028
SCD-80
diode rectifier siemens
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marking JC diode
Abstract: BXY18AB6 marking code diode 04 to-18 Q62702-X137 kl diode BXY18A2 BXY18AB2 BXY18AB5 Q62702-X133 SIEMENS marking
Text: SIEM ENS Silicon Charge Storage Varactors BXY18. • Multiplier diode for high frequencies up to 18 GHz Type Marking Ordering Code Pin Configuration Package1 BXY18A2 - Q62702-X140 Cathode: black dot, T BXY18AB2 Q62702-X133 BXY18AB5 Q62702-X136 BXY18AB6
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BXY18.
BXY18A2
Q62702-X140
BXY18AB2
Q62702-X133
EHA07001
BXY18AB5
Q62702-X136
BXY18AB6
Q62702-X137
marking JC diode
BXY18AB6
marking code diode 04 to-18
Q62702-X137
kl diode
BXY18AB2
BXY18AB5
SIEMENS marking
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Diode BAY 74
Abstract: BAY74 BAV74 74 MARKING
Text: SIEM EN S Silicon Switching Diode Array BAV 74 • For high-speed switching • Common cathode Type Marking Ordering Code tape and reel BAV 74 JAs Q62702-A693 Pin Configuration Package1) 3 SOT-23 IK o CHAO7004 Maximum Ratings per Diode Parameter Symbol Values
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Q62702-A693
OT-23
CHAO7004
H800069
BAV74
Diode BAY 74
BAY74
BAV74
74 MARKING
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Untitled
Abstract: No abstract text available
Text: Central Semiconductor Corp. C B AS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. SOT-23 CASE MAXIMUM RATINGS
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CBAS17
OT-23
100nction
100mA
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Q62702-A718
Abstract: BAL74 MU diode MARKING CODE diode marking code MU 591 SOT23-3
Text: SIEMENS Silicon Switching Diode BAL 74 • For high-speed switching Type Marking Ordering Code tape and reel BAL74 JCs Q62702-A718 Pin Configuration Package1) 0- « - 3 SOT-23 2 EHM0001 Maximum Ratings Parameter Symbol Values Unit
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BAL74
Q62702-A718
OT-23
EHM0001
Q62702-A718
BAL74
MU diode MARKING CODE
diode marking code MU
591 SOT23-3
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