Untitled
Abstract: No abstract text available
Text: PD – 91746D IRF7805 HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented
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91746D
IRF7805
IRF7805
EIA-481
EIA-541.
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10BQ040
Abstract: EIA-541 F7101 IRF7101 IRF7805
Text: PD – 91746E IRF7805 HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented
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91746E
IRF7805
IRF7805
EIA-481
EIA-541.
10BQ040
EIA-541
F7101
IRF7101
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Untitled
Abstract: No abstract text available
Text: PD – 91746E IRF7805 HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented
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91746E
IRF7805
IRF7805
EIA-481
EIA-541.
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CSG3001-18A04
Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power
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400F415
460F460
500F500
630F415
730F460
800F500
570F575
630F660
870F575
1000F660
CSG3001-18A04
thyristor BBC
thyristor aeg
BBC DSDI 35
WG15013B8C
WG9017
abb sami star
SM18CXC805
sm13cxc174
CSG2001-18A04
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Untitled
Abstract: No abstract text available
Text: PD- 91792A IRL3215 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.166 Ω G ID = 12A
S Description Fifth Generation HEXFETs from International Rectifier utilize advanced
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1792A
IRL3215
O-220
IRF1010
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IRF7324D1
Abstract: IRF7807D1 MS-012AA IC 22A Regulator
Text: PD- 91789B IRF7324D1 FETKYä MOSFET / Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO-8 Footprint A A S G 1 8 K 2 7 K 3 6 4 5 D VDSS = -20V RDS on = 0.27Ω D Schottky Vf = 0.39V
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91789B
IRF7324D1
EIA-481
EIA-541.
IRF7324D1
IRF7807D1
MS-012AA
IC 22A Regulator
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Untitled
Abstract: No abstract text available
Text: PD- 91705B IRF7322D1 FETKYä MOSFET / Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K 2 7
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91705B
IRF7322D1
EIA-481
EIA-541.
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IRF7322D1
Abstract: IRF7807D1 MS-012AA
Text: PD- 91705B IRF7322D1 FETKYä MOSFET / Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K 2 7
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91705B
IRF7322D1
EIA-481
EIA-541.
IRF7322D1
IRF7807D1
MS-012AA
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Untitled
Abstract: No abstract text available
Text: PD - 91749 IRFR/U6215 PRELIMINARY HEXFET Power MOSFET P-Channel l 175°C Operating Temperature l Surface Mount IRFR6215 l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = -150V RDS(on) = 0.295Ω
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IRFR/U6215
IRFR6215)
IRFU6215)
-150V
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IRFR6215
Abstract: IRFU6215
Text: PD - 91749 IRFR/U6215 PRELIMINARY HEXFET Power MOSFET P-Channel l 175°C Operating Temperature l Surface Mount IRFR6215 l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = -150V RDS(on) = 0.295Ω
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IRFR/U6215
IRFR6215)
IRFU6215)
-150V
IRFR6215
IRFU6215
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IRF7341
Abstract: EIA-541 F7101 IRF7101
Text: PD -91703A IRF7341 l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching HEXFET Power MOSFET S1 G1 S2 G2 Description 1 8 D1 2 7 D1 3 6 4 5 VDSS = 55V
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-91703A
IRF7341
EIA-481
EIA-541.
IRF7341
EIA-541
F7101
IRF7101
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IRFR6215
Abstract: IRFU6215
Text: 2002-03-01 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-173-28 IRFR6215 HEXFET D-Pak PD - 91749 IRFR/U6215 PRELIMINARY HEXFET Power MOSFET P-Channel l 175°C Operating Temperature
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IRFR6215
IRFR/U6215
IRFR6215)
IRFU6215)
-150V
IRFU6215
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IRFR6215
Abstract: IRFU6215
Text: PD - 91749 IRFR/U6215 PRELIMINARY HEXFET Power MOSFET P-Channel l 175°C Operating Temperature l Surface Mount IRFR6215 l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = -150V RDS(on) = 0.295Ω
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IRFR/U6215
IRFR6215)
IRFU6215)
-150V
IRFR6215
IRFU6215
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MS-012AA
Abstract: EIA-541 F7101 IRF7101 IRF7805
Text: PD- 91746D IRF7805 HEXFET Power MOSFET l l l l l l Low On-Resistance Low Gate Charge N-Channel MOSFET Ideal for mobile processor DC-DC converters Surface Mount 100% RG Tested 1 8 S 2 7 S 3 6 4 5 S G A A D VDSS = 30V D D D RDS on = 0.009Ω Top View Description
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91746D
IRF7805
EIA-481
EIA-541.
MS-012AA
EIA-541
F7101
IRF7101
IRF7805
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AN-994
Abstract: IRF1010EL IRF1010ES
Text: PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G Description
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IRF1010ES
IRF1010EL
IRF1010ES)
IRF1010EL)
AN-994
IRF1010EL
IRF1010ES
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Untitled
Abstract: No abstract text available
Text: PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G Description
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IRF1010ES
IRF1010EL
IRF1010ES)
IRF1010EL)
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IRF7343
Abstract: No abstract text available
Text: PD -91709A IRF7343 l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated HEXFET Power MOSFET S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Description Fifth Generation HEXFETs from International Rectifier
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-91709A
IRF7343
EIA-481
EIA-541.
IRF7343
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IRF9Z24NL
Abstract: IRF9Z24NS
Text: PD - 91742A IRF9Z24NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z24NS l Low-profile through-hole (IRF9Z24NL) l 175°C Operating Temperature l P-Channel l Fast Switching l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.175Ω
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1742A
IRF9Z24NS/L
IRF9Z24NS)
IRF9Z24NL)
IRF9Z24NL
IRF9Z24NS
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IRF9Z24N
Abstract: IRF9Z24NL IRF9Z24NS
Text: PD - 91742 IRF9Z24NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z24NS l Low-profile through-hole (IRF9Z24NL) l 175°C Operating Temperature l P-Channel l Fast Switching l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.175Ω
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IRF9Z24NS/L
IRF9Z24NS)
IRF9Z24NL)
IRF9Z24N
IRF9Z24NL
IRF9Z24NS
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IRF9Z24N
Abstract: IRF9Z24NL IRF9Z24NS
Text: PD - 91742A IRF9Z24NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z24NS l Low-profile through-hole (IRF9Z24NL) l 175°C Operating Temperature l P-Channel l Fast Switching l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.175Ω
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1742A
IRF9Z24NS/L
IRF9Z24NS)
IRF9Z24NL)
IRF9Z24N
IRF9Z24NL
IRF9Z24NS
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Untitled
Abstract: No abstract text available
Text: PD - 91742A IRF9Z24NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z24NS l Low-profile through-hole (IRF9Z24NL) l 175°C Operating Temperature l P-Channel l Fast Switching l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.175Ω
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1742A
IRF9Z24NS/L
IRF9Z24NS)
IRF9Z24NL)
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Untitled
Abstract: No abstract text available
Text: P D - 91742 International Iö R Rectifier IRF9Z24NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF9Z24NS • Low-profile through-hole (IRF9Z24NL) • 175°C Operating Temperature • P-Channel • Fast Switching • Fully Avalanche Rated
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IRF9Z24NS)
IRF9Z24NL)
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Untitled
Abstract: No abstract text available
Text: PD - 91749 International IQ R Rectifier IRFR/U6215 PRELIMINARY HEXFET Power MOSFET • P-Channel • 175°C Operating Temperature • Surface Mount IRFR6215 • Straight Lead (IRFU6215) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated
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IRFR6215)
IRFU6215)
IRFR/U6215
-150V
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Untitled
Abstract: No abstract text available
Text: PD- 91789 International IO R Rectifier PRELIMINARY IR F 7 3 2 4 D 1 FETKY MOSFET / Schottky Diode Co-packaged H EXFET Power M O SFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO -8 Footprint V d ss = -2 0 V R ü S o n = o . 1 8 £ 2
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