PMEG2010EA
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D049 PMEG2010EA Low VF MEGA Schottky barrier diode Product specification 2002 Dec 10 Philips Semiconductors Product specification Low VF MEGA Schottky barrier diode FEATURES PMEG2010EA PINNING • Forward current: 1 A
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M3D049
PMEG2010EA
PMEG2010EA
MAM283
OD323
SC-76)
12-Mar-03)
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PDF
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SiA456DJ
Abstract: SiA456DJ-T1-GE3
Text: New Product SiA456DJ Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 1.38 at VGS = 4.5 V 2.6 1.50 at VGS = 2.5 V 2.5 3.50 at VGS = 1.8 V 0.5 VDS (V) 200 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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SiA456DJ
SC-70
SC-70-6L-Single
SiA456DJ-T1-GE3
08-Apr-05
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PDF
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si3438
Abstract: Si3438DV
Text: New Product Si3438DV Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a 0.0355 at VGS = 10 V 7.4 0.0425 at VGS = 4.5 V 6.7 • TrenchFET Power MOSFET Qg (Typ.) 5.3 nC APPLICATIONS RoHS • DC/DC Converter
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Si3438DV
Si3438DV-T1-E3
18-Jul-08
si3438
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PDF
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si3438
Abstract: Si3438DV
Text: New Product Si3438DV Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a 0.0355 at VGS = 10 V 7.4 0.0425 at VGS = 4.5 V 6.7 • TrenchFET Power MOSFET Qg (Typ.) 5.3 nC APPLICATIONS RoHS • DC/DC Converter
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Si3438DV
Si3438DV-T1-E3
08-Apr-05
si3438
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PDF
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SIA426DJT1GE3
Abstract: No abstract text available
Text: New Product SiA426DJ Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0236 at VGS = 10 V 4.5 0.0263 at VGS = 4.5 V 4.5 0.0361 at VGS = 2.5 V 4.5 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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Original
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SiA426DJ
SC-70
SC-70-6L-Single
SiA426DJ-T1-GE3
08-Apr-05
SIA426DJT1GE3
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiA426DJ Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0236 at VGS = 10 V 4.5 0.0263 at VGS = 4.5 V 4.5 0.0361 at VGS = 2.5 V 4.5 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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Original
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SiA426DJ
SC-70
SC-70-6L-Single
SiA426DJ-T1-GE3
18-Jul-08
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PDF
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SiA426
Abstract: No abstract text available
Text: New Product SiA426DJ Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0236 at VGS = 10 V 4.5 0.0263 at VGS = 4.5 V 4.5 0.0361 at VGS = 2.5 V 4.5 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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Original
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SiA426DJ
SC-70
SC-70-6L-Single
SiA426DJ-T1-GE3
11-Mar-11
SiA426
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5482DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.015 at VGS = 10 V 12 0.0175 at VGS = 4.5 V 12 Qg (Typ.) 16 nC PowerPAK ChipFET Single 1 D AE XXX 4 Lot Traceability and Date Code D D • Load Switch, PA Switch, and Battery Switch
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Original
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Si5482DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si5418DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0145 at VGS = 10 V 12 0.0185 at VGS = 4.5 V 12 VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK ChipFET Single • Halogen-free • TrenchFET Power MOSFET
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Original
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Si5418DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5480DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.016 at VGS = 10 V 12 0.022 at VGS = 4.5 V 12 Qg (Typ.) 11 nC PowerPAK ChipFET Single 2 D D 4 D G D 7 S 6 COMPLIANT • Load Switch, PA Switch, and Battery Switch
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Original
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Si5480DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5484DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.016 at VGS = 4.5 V 12 VDS (V) 20 0.021 at VGS = 2.5 V • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package
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Original
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Si5484DU
Si5484DU-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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Original
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Si5419DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET
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Original
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Si5479DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5482DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.015 at VGS = 10 V 12 0.0175 at VGS = 4.5 V 12 Qg (Typ.) 16 nC PowerPAK ChipFET Single 1 D AE XXX 4 Lot Traceability and Date Code D D • Load Switch, PA Switch, and Battery Switch
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Original
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Si5482DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5484DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.016 at VGS = 4.5 V 12 VDS (V) 20 0.021 at VGS = 2.5 V • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package
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Original
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Si5484DU
Si5484DU-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si5418DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0145 at VGS = 10 V 12 0.0185 at VGS = 4.5 V 12 VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK ChipFET Single • Halogen-free • TrenchFET Power MOSFET
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Original
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Si5418DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5480DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.016 at VGS = 10 V 12 0.022 at VGS = 4.5 V 12 Qg (Typ.) 11 nC PowerPAK ChipFET Single 2 D D 4 D G D 7 S 6 COMPLIANT • Load Switch, PA Switch, and Battery Switch
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Original
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Si5480DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5944DU Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.112 at VGS = 10 V 6a 0.171 at VGS = 4.5 V 4.9 Qg (Typ.) 2.2 nC PowerPAK ChipFET Dual 1 CC G1 4 S2 D1 7 D1 D2 Part # Code G2 D2 6 COMPLIANT
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Si5944DU
Si5944DU-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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Original
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Si5419DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Si1410EDH
Abstract: No abstract text available
Text: Si1410EDH New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.070 @ VGS = 4.5 V 3.7 APPLICATIONS 20
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Si1410EDH
SC-70
OT-363
SC-70
S-03185--Rev.
05-Mar-01
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PDF
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Untitled
Abstract: No abstract text available
Text: About Lab Kits General: Engineers and designers find Lab Kits convenient and economical. Each Lab Kit contains a broad range of the most popular components. Assembly: Lab Kits are available on tape and reel for automated assembly on pick-andplace m achines or in bulk bags and
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OCR Scan
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SM5819
40Vtms
BT2222A
BT2907A
BT3904
BT3906
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PDF
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Si1912EDH
Abstract: No abstract text available
Text: SM912EDH New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V ) 20 •d ( A ) r D S {on) ( & ) 0.280 @ V Gs = 4.5 V 1.28 0.360 9 VGS = 2.5 V 1.13 0.450 @ VGS = 1.8 V 1.0 SOT-363 SC-70 (6-LEADS) r • TrenchFET Power MOSFETS: 1.8-V Rated
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OCR Scan
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SM912EDH
SC-70
OT-363
SC-70
Conduction25°
S-03176--
05-Mar-01
1912EDH
05-Mar-01
Si1912EDH
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PDF
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s0318
Abstract: sot363 marking qs
Text: SÌ1417EDH New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V) -1 2 • TrenchFET Power MOSFETS: 1,8-V Rated • ESD Protected1 . 3000 V • Thermally Enhanced SC-70 Package I d (A ) rDS(on>(ß) 0.085 @ V GS = -4 .5 V
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OCR Scan
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1417EDH
SC-70
OT-363
SC-70
S-03187--
05-Mar-01
SM417EDH
s0318
sot363 marking qs
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PDF
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sot363 marking qs
Abstract: No abstract text available
Text: SÌ1913EDH New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V ) 0.490 @ VGS = -4 .5 V -2 0 0.750 @ Vqs = "2 .5 1.10 @ VGs = -1 .B • TrenchFET Power MOSFETS: 1.8-V Rated • ESD Protected: 3000 V • Thermally Enhanced SC-70 Package
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OCR Scan
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1913EDH
SC-70
OT-363
SC-70
S-03175--
05-Mar-01
SM913EDH
sot363 marking qs
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PDF
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