marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAS21/A/C/SLT1 SOT—23 SWITCHING DIODE FEATURES BAS21LT1 Marking: JS BAS21ALT1 Marking: JS2 Reverse breakdown voltage Reverse voltage Forward Diode leakage current voltage
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OT-23
BAS21/A/C/SLT1
BAS21LT1
BAS21ALT1
BAS21CLT1
037TPY
950TPY
550REF
022REF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes CMPSH-3/3A/3C/3S SOT—23 SCHOTTKY DIODE FEATURES CMPSH-3 Marking: D95 CMPSH-3A Marking: DB1 Reverse breakdown voltage Reverse voltage Forward Diode leakage current voltage
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OT-23
037TPY
950TPY
550REF
022REF
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1N4148WT
Abstract: 1N4448WT marking codes fairchild 1N914BWT 914BWT FAIRCHILD DIODE Fairchild marking change diode Fairchild Diode Marking Change
Text: 1N4148WT / 1N4448WT / 1N914BWT High Conductance Fast Switching Diode Features • • • • • • • Device Marking Code Device Type Device Marking 1N4148WT E1 1N4448WT E2 1N914BWT E3 Fast Switching Diode Trr <4.0nsec Flat Lead, Surface Mount Device Under 0.70mm Height
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1N4148WT
1N4448WT
1N914BWT
1N4148WT
1N4448WT
OD523F
OD-523F
marking codes fairchild
1N914BWT
914BWT
FAIRCHILD DIODE
Fairchild marking change diode
Fairchild Diode Marking Change
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1N4148WS
Abstract: No abstract text available
Text: Diode Silicon Epitaxial Switching Diode Feature: • Fast Switching Diode. Marking 1N4148WS= A2 with cathode band. Absolute Maximum Ratings Description Symbol Value Continuous Reverse Voltage VR 75 VRRM 100 *IF AV 150 Surge Forward Current t <1s and Tj = 25°C
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1N4148WS=
1N4148WS
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BAS16W
Abstract: MMBD4148W
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE MMBD4148W/BAS16W SWITCHING DIODE SOT-323 FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance Marking: A2 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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OT-323
MMBD4148W/BAS16W
OT-323
150mA
MMBD4148W
/BAS16W
BAS16W
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS40 SERIES SOT—23 SCHOTTKY DIODE FEATURES BAS40 Marking:43 BAS40-04 Marking:44 ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage
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OT-23
BAS40
BAS40-04
BAS40-05
BAS40-06
037TPY
950TPY
550REF
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Q62702-A1031
Abstract: marking code AC sot 323 diode
Text: BAW 56W Silicon Switching Diode Array • For high speed switching applications • Common anode Type Marking Ordering Code Pin Configuration BAW 56W A1s 1 = C1 Q62702-A1031 2=C2 Package 3=A1/A2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage
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Q62702-A1031
OT-323
Nov-28-1996
Q62702-A1031
marking code AC sot 323 diode
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A1030 transistor
Abstract: Q62702-A1030 marking code a4s
Text: BAV 70W Silicon Switching Diode Array • For high speed switching applications • Common cathode Type Marking Ordering Code Pin Configuration BAV 70W A4s 1 = A1 Q62702-A1030 2 = A2 Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage
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Q62702-A1030
OT-323
Nov-28-1996
A1030 transistor
Q62702-A1030
marking code a4s
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Untitled
Abstract: No abstract text available
Text: MMBD4148W/BAS16W Switching Diode SOT-323 Features Fast Switching Speed For General Purpose Switching Applications High Conductance Marking: Dimensions in inches and millimeters A2 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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MMBD4148W/BAS16W
OT-323
150mA
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1N4148WS
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON EPITAXIAL SWITCHING DIODE 1N4148WS SOD-323 PLASTIC PCAKAGE Marking 1N4148WS= A2 Fast Switching Diode ABSOLUTE MAXIMUM RATINGS DESCRIPTION Continuous Reverse Voltage Repetitive Peak Reverse Voltage
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ISO/TS16949
1N4148WS
OD-323
1N4148WS=
C-120
1N4148WSRev140604E
1N4148WS
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Untitled
Abstract: No abstract text available
Text: BAS16W-WS PB FREE PRODUCT SURFACE MOUNT FAST SWITCHING DIODE SOT-323 FEATURES z Fast Switching Speed z For General Purpose Switching Applications High Conductance z Marking: A2 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter
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BAS16W-WS
OT-323
150mA
MMBD4148W
/BAS16W
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LBAL99WT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. LBAL99WT1G Switching Diode • We declare that the material of product 3 compliance with RoHS requirements. 1 2 DEVICE MARKING ORDERING INFORMATION . Device Marking LBAL99WT1G JF 3000 Tape & Reel JF 10000 Tape & Reel LBAL99WT1G SC-70
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LBAL99WT1G
SC-70
LBAL99WT1G
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Untitled
Abstract: No abstract text available
Text: BAR 65-07 Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-Diode • Band switch for TV-tuners • Series diode for mobile communications transmit-receive switch • Unconnected pair Type Marking Ordering Code Pin Configuration
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OT-143
Q62702-
Apr-30-1996
100MHz
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chip Marking 3A3
Abstract: Diode BGX50A BGX50A VPS05178
Text: BGX50A Silicon Switching Diode Array 3 Bridge configuration High-speed switching diode chip 4 2 1 2 3 VPS05178 1 4 EHA00007 Type BGX50A Marking U1s Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 4=A2/C3 Package SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage
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BGX50A
VPS05178
EHA00007
OT143
EHB00147
EHB00148
Jul-31-2001
EHB00149
chip Marking 3A3
Diode BGX50A
BGX50A
VPS05178
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAV 70S Silicon Switching Diode Array Type Marking Ordering Gode BAV 70S A4s Pin Configuration Q62702-A1097 1/4=A1 2/5=A2 Package 3/6=C1/2 SOT-363 Maximum Ratings per Diode Symbol Parameter Values 70 Diode reverse voltage Peak reverse voltage Forward current
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OCR Scan
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Q62702-A1097
OT-363
40mmm
535bQ5
aH35fc
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon RF Switching Diode BAT 18 . • Low-loss VHF/UHF switch above 10 MHz • Pin diode with low forward resistance Type Marking Ordering Code Pin Configuration Package1 BAT 18 A2 Q62702-A787 SOT 23 °- ^ ^ 1-ÍHA07002 BAT 18-04
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Q62702-A787
HA07002
Q62702-A938
EHA0700S
Q62702-A940
Q62702-A942
EKA07004
EHA070M
235b05
G12034Ã
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAS 28W Silicon Switching Diode Array For high-speed switching applications Electrical insulated diodes Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 =C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings Symbol Diode reverse voltage
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Q62702-A3466
OT-343
EHN00019
100ns,
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diode a4s
Abstract: marking code fs 1 sot 323 A4s diode
Text: SIEMENS BAV 70W Silicon Switching Diode Array •For high speed switching applications ■Common cathode Type Marking Ordering Code Pin Configuration BAV 70W A4s 1 =A1 Q62702-A1030 2 = A2 Package 3 = C1/CÍ SOT-323 Maximum Ratings per Diode Parameter Symbol
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OCR Scan
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PDF
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Q62702-A1030
OT-323
40mmm
diode a4s
marking code fs 1 sot 323
A4s diode
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049-6
Abstract: diode MARKING A1
Text: SIEMENS BAR 65-07 Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-Diode • Band switch for TV-tuners • Series diode for mobile communications transmit-receive switch • Unconnected pair Type Marking Ordering Code BAR 65-07
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OCR Scan
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PDF
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OT-143
100MHz
049-6
diode MARKING A1
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Untitled
Abstract: No abstract text available
Text: SIEMENS BBY 52 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code Pin Configuration BBY 52 S5s Q62702-B632 1 = A1 Package 2 = A2
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Q62702-B632
OT-23
H35bDS
02BSbOS
BBY52
aE35b05
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