Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N65K Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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7N65K
7N65K
QW-R502-770.
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N65-M Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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7N65-M
7N65-M
7N65L-TA3-T
7N65G-TA3-T
O-220
QW-R502-A28
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60K Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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7N60K
7N60K
QW-R502-776
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7N80
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N80 Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET 1 * RDS on <1.8Ω@ VGS =10V * High switching speedY * 100% avalanche tested 1 1 TO-220F2 TO-220F1 1 1 FEATURES TO-220F TO-220 DESCRIPTION The UTC 7N80 is an N-channel mode power MOSFET using UTC’s
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O-220F2
O-220F1
O-220F
O-220
O-263
O-220F3
QW-R502-523
7N80
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N80 Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum
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O-220F
O-220
O-220F1
O-220F2
O-263
QW-R502-523
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N70 Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET 1 FEATURES * RDS ON < 1.6Ω @VGS = 10 V * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness TO-220F TO-220 DESCRIPTION
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O-220F
O-220
O-220F2
O-220F1
O-220F3
QW-R502-103.
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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7N60L-TA3-T
7N60G-TA3-T
7N60L-TF3-T
7N60G-TF3-T
7N60L-TFt
QW-R502-076.
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7N65G
Abstract: 7N65L
Text: UNISONIC TECHNOLOGIES CO., LTD 7N65 Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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7N65L-TA3-T
7N65G-TA3-T
7N65L-TF3-T
7N65G-TF3-T
7N65L-TFat
QW-R502-104
7N65G
7N65L
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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7N60L-TA3-T
7N60G-TA3-T
7N60L-TF3-T
7N60G-TF3-T
7N60L-TFt
QW-R502-076.
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Untitled
Abstract: No abstract text available
Text: SMN0250F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • Drain-Source breakdown voltage: BVDSS=500V Min. Low gate charge: Qg=7nC (Typ.) Low drain-source On resistance: RDS(on)=3.4Ω (Max.) 100% avalanche tested RoHS compliant device
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SMN0250F
SMN0250
O-220F-3L
SDB20D45
31-AUG-11
KSD-T0O107-000
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N70-M Preliminary Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N70-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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7N70-M
7N70-M
QW-R209-064
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7NM70 Preliminary Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7NM70 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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7NM70
7NM70
QW-R205-047
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7NM65 Preliminary Power MOSFET 7A, 650V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 7NM65 is an Super Junction MOSFET Structure. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state
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7NM65
7NM65
QW-R205-042
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N70-R Preliminary Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N70-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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7N70-R
7N70-R
QW-R209-066
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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7N65K-MTQ
7N65K-MTQ
7N65KL-TA3-T
7N65KG-TA3-T
O-220
7N65Kat
QW-R205-020
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60K-MTQ Preliminary Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60K-MTQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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7N60K-MTQ
7N60K-MTQ
7N60KL-TA3-T
QW-R205-025
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 7N90-MK6 Power MOSFET 7A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N90-MK6 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specializes in allowing
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7N90-MK6
7N90-MK6
O-220
QW-R205-049
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N90 Power MOSFET 7A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specializes in allowing a
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QW-R502-475
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N70 Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220 DESCRIPTION The UTC 7N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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O-220F
O-220
O-220F2
O-220F1
O-220F3
O-262
QW-R502-103.
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7n10l
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe
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OT-223
O-252D
O-251
O-252
QW-R502-394
7n10l
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R0813
Abstract: CSD02060G csd02060 q 406 813 CSD02060A D02060
Text: CSD02060–Silicon Carbide Schottky Diode VRRM = 600V Zero Recovery Rectifier IF AVG = 2A Qc Features • • • • • • • = 7nC Package 600-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior
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CSD02060
600-Volt
O-263-2
O-220-2
00W-400W
R0813
CSD02060G
q 406 813
CSD02060A
D02060
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Untitled
Abstract: No abstract text available
Text: SM MK02 260IS S Advan nced N-Ch Po ower MOSFE ET SW WITCHIN NG REG GULATO OR APPLICATIO ON Fe eatures • Drain-Sourrce breakdo own voltage e: BVDSS=600 0V Min. • Low gate charge: c Qg=7nC (Typ.) • Low drain-source On resistance: RDS(on)=3.9Ω Ω (Typ.)
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260IS
SMK026
SMK0260
12-MAR-13
KSD-T6Q018-000
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KIC7SU04FU
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KIC7SU04FU SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT INVERTER B1 C D G H T FEATURES • • • • • • • High Speed : tPd=7ns Typ. at Vcc=5V. Low Power Dissipation : Icc=ljuA(Max.) at Ta=25°C. High Noise Immunity : V n ih = V n il = 2 8 % VCc(Min.).
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KIC7SU04FU
KIC7SU04FU
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C2MOS
Abstract: MARKING J1A marking j5a KIC7S08FU
Text: SEMICONDUCTOR TECHNICAL DATA KIC7S08FU SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT 2-INPUT AND GATE DIM 2.0 0 + 0 .2 0 Al 1 .3 ± 0 .1 B 2 .1+ 0.1 B1 1 .2 5 + 0 .1 C D G FEATURES • • • • • • • H T High Speed : tpci=7ns Typ. at Vcc=5V.
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KIC7S08FU
KIC7S08FU
C2MOS
MARKING J1A
marking j5a
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