philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS20HT1G z Pb-Free Package is Available. 1 z Device Marking: JR 1 CATHODE 2 ANODE 2 SOD– 323 MARKING DIAGRAM Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR
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LBAS20HT1G
3000/Tape
LBAS20HT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel
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LBAS21HT1G
3000/Tape
LBAS21HT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.
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1N5408
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mark a7 sot23 DIODE
Abstract: LBAV99LT1G LBAV99LT3G mark a7 sot23
Text: LESHAN RADIO COMPANY, LTD. LBAV99LT1G Dual Series Switching Diode 3 • We declare that the material of product compliance with RoHS requirements. 1 DEVICE MARKING ORDERING INFORMATION . Device Marking Shipping LBAV99LT1G A7 3000 Tape & Reel LBAV99LT3G A7
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LBAV99LT1G
LBAV99LT3G
195mm
150mm
3000PCS/Reel
8000PCS/Reel
OT-723
OD-723)
mark a7 sot23 DIODE
LBAV99LT1G
LBAV99LT3G
mark a7 sot23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode LBAV99LT1G • Pb−Free Package is Available. 3 DEVICE MARKING ORDERING INFORMATION . Device Marking Shipping LBAV99LT1G A7 3000 Tape & Reel LBAV99LT3G A7 10000 Tape & Reel 1 2 2 CATHODE 1 ANODE 3 CAHODE/ANODE
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LBAV99LT1G
LBAV99LT3G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Switching Diode ƽ Pb-Free Package is available. LBAS16LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBAS16LT1G A6 SOT-23 3000/Tape&Reel LBAS16LT3G A6 SOT-23 10000/Tape&Reel 3 1 2 MAXIMUM RATINGS Rating
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LBAS16LT1G
OT-23
3000/Tape
LBAS16LT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: BAR 67-02V Silicon PIN Diode Preliminary data Low loss RF switch 2 RF attenuator Low series capacitance and resistance 1 VES05991 Type Marking Pin Configuration Package BAR 67-02V TT 1=C SC-79 2=A Maximum Ratings Parameter Symbol Diode reverse voltage
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7-02V
VES05991
SC-79
Mar-21-2000
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PDF
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Untitled
Abstract: No abstract text available
Text: BAR 67-02V Silicon PIN Diode Low loss RF switch 2 RF attenuator Low series capacitance and resistance 1 VES05991 Type Marking Pin Configuration Package BAR 67-02V TT 1=C SC-79 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 150 V Forward current
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7-02V
VES05991
SC-79
Nov-16-2000
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Untitled
Abstract: No abstract text available
Text: 808nm Butterfly Packaged Diode Laser K81S14F-2.00W Key Features： 2W output power 105µm fiber core diameter 0.22NA 808nm wavelength Applications： Laser pumping Medical use Printing Heating Material processing Marking BWT Beijing’s High Power Diode Laser Modules are manufactured by
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808nm
K81S14F-2
/bwt/808nm/k81s14f
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Switching diode L1SS400GT1G • Applications High speed switching • Features 1 Extremely small surface mounting type. 1 2) High Speed. 3) High reliability. • Construction Silicon epitaxial planar 2 SOD - 723 • Device Marking
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L1SS400GT1G
L1SS400GT1G
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Untitled
Abstract: No abstract text available
Text: BA 892-02V Silicon Rf Switching Diode For band switching in TV / VTR tuners up to 2GHz 2 Low forward resistance, small capacitance, small inductance 1 VES05991 Type Marking Pin Configuration Package BA 892-02V AA 1=C SC-79 2=A Maximum Ratings Parameter
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92-02V
VES05991
SC-79
Sep-08-2000
100MHz
EHD07009
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Switching Diode FEATURE LBAS16HT1G ƽSmall plastic SMD package. ƽContinuous reverse voltage: max. 75 V. ƽHigh-speed switching in hybrid thick and thin-film circuits. 1 ƽPb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION
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LBAS16HT1G
3000/Tape
LBAS16HT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications LBA277T1 High frequency switching z Features 1 Small surface mounting type. 2) High reliability. 1 z Construction Silicon epitaxial planar 2 z Pb-Free package is available SOD–523 Device Marking
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LBA277T1
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LBAS21HT1G
Abstract: 47701
Text: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G • We declare that the material of product 1 compliance with RoHS requirements. 2 CASE 477, STYLE 1 SOD– 323 Ordering Information Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel LBAS21HT3G
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LBAS21HT1G
LBAS21HT3G
3000/Tape
10000/Tape
195mm
150mm
3000PCS/Reel
8000PCS/Reel
LBAS21HT1G
47701
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sod523 dimension LESHAN RADIO COMPANY
Abstract: LBA277AT1
Text: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications LBA277AT1 High frequency switching z Features 1 Small surface mounting type. 2) High reliability. 1 z Construction Silicon epitaxial planar 2 1 CATHODE SOD–523 2 ANODE Device Marking LBA277AT1 = 1
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LBA277AT1
LBA277AT1-2/3
523/SC
LBA277AT1-3/3
sod523 dimension LESHAN RADIO COMPANY
LBA277AT1
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DIODE BAT
Abstract: Q62702-A0960 sod-123 marking code 621 621 marking diode
Text: Silicon Schottky Diode BAT 14-098 Preliminary Data DBS mixer application to 12 GHz ● Low noise figure ● Medium barrier type ● ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel BAT 14-098
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Q62702-A0960
OD-123
DIODE BAT
Q62702-A0960
sod-123 marking code 621
621 marking diode
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G • We declare that the material of product 1 compliance with RoHS requirements. 2 CASE 477, STYLE 1 SOD– 323 ORDERING INFORMATION Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel LBAS21HT3G
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LBAS21HT1G
LBAS21HT3G
3000/Tape
10000/Tape
195mm
150mm
3000PCS/Reel
8000PCS/Reel
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Switching Diode LBAL99LT1G Featrues Pb-Free Package is Available. Ordering Information Device 3 Marking Shipping 1 LBAL99LT1G JF 3000/Tape&Reel LBAL99LT3G JF 10000/Tape&Reel 2 CASE 318–08, STYLE 18 SOT–23 TO–236AB MAXIMUM RATINGS
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LBAL99LT1G
3000/Tape
LBAL99LT3G
10000/Tape
236AB)
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues Pb-Free Package is Available. Ordering Information 3 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel 1 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB
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LBAV74LT1G
3000/Tape
LBAV74LT3G
10000/Tape
236AB)
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BZM55C3V6
Abstract: BZM55C18 BZM55C2V4 BZM55C2V7 BZM55C3V0 BZM55C3V3 BZM55C3V9 BZM55C75 79 05 ct DS30005
Text: BZM55C2V4 - BZM55C75 500mW SURFACE MOUNT ZENER DIODE Features 500m W Power Dissipation High Stability Low Noise Hemetic Package Mechanical Data Case: MicroMELF, Glass Terminals: Solderable per M IL-STD-202, Method 208 Polarity: Cathode Band Marking: Cathode Band Only
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OCR Scan
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BZM55C2V4
BZM55C75
500mW
MIL-STD-202,
200mA
DS30005
BZM55C2V4-BZM55C75
BZM55C3V6
BZM55C18
BZM55C2V7
BZM55C3V0
BZM55C3V3
BZM55C3V9
BZM55C75
79 05 ct
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diode BAT 14-098 Preliminary Data • DBS mixer application to 12 GHz • Low noise figure • Medium barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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OCR Scan
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Q62702-A0960
OD-123
EH007100
fl23Sb05
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PDF
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