BAS19
Abstract: BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR
Text: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol
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BAS19LT1,
BAS20LT1,
BAS21LT1
BAS19LT1
BAS20LT1
BAS19
BAS20
BAS21
r14525
BAS19
BAS19LT1
BAS20
BAS20LT1
BAS21
BAS21LT1
sot23 marking JR
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BAS19LT1
Abstract: sot-23 MARKING CODE JS BAS19 BAS20 BAS20LT1 BAS21 BAS21LT1 SOT23 Marking JX marking 556c
Text: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol
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BAS19LT1,
BAS20LT1,
BAS21LT1
BAS19LT1
BAS20LT1
BAS19
BAS20
BAS21
r14525
BAS19LT1
sot-23 MARKING CODE JS
BAS19
BAS20
BAS20LT1
BAS21
BAS21LT1
SOT23 Marking JX
marking 556c
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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Untitled
Abstract: No abstract text available
Text: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.
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1N5408
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Untitled
Abstract: No abstract text available
Text: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA8S03G RoHS Device Voltage: 10Volts Current: 50 mA Package (SOT-23) Feature Marking “ CDA8 “ Schematic This diode network is designed to provide an integrated solution for the active termination of
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CDA8S03G
10Volts
OT-23)
MDS0903007A
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Untitled
Abstract: No abstract text available
Text: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)
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VBUS051BD-HD1
LLP1006-2L
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)
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VBUS051BD-HD1
LLP1006-2L
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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VBUS05L1-DD1-G-08
Abstract: No abstract text available
Text: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking
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VBUS05L1-DD1
LLP1006-2M
LLP1006-2M
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
VBUS05L1-DD1-G-08
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Untitled
Abstract: No abstract text available
Text: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)
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VBUS051BD-HD1
LLP1006-2L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)
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VBUS051BD-HD1
LLP1006-2L
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking
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VBUS05L1-DD1
LLP1006-2M
LLP1006-2M
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking
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VBUS05L1-DD1
LLP1006-2M
LLP1006-2M
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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MMBZ5221BS
Abstract: MMBZ5223BS MMBZ5225BS MMBZ5226BS MMBZ5227BS MMBZ5228BS MMBZ5229BS MMBZ5259BS KE2 diode ZENER A2.2
Text: MMBZ5221BS - MMBZ5259BS 200mW SURFACE MOUNT ZENER DIODE Features SOT-363 A A1 KXX Mechanical Data • · · · · C1 Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: KXX: Part marking See table page 2
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MMBZ5221BS
MMBZ5259BS
200mW
OT-363
OT-363,
MIL-STD-202,
MMBZ5257BS
MMBZ5258BS
DS31039
MMBZ5223BS
MMBZ5225BS
MMBZ5226BS
MMBZ5227BS
MMBZ5228BS
MMBZ5229BS
MMBZ5259BS
KE2 diode
ZENER A2.2
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DIODE A6
Abstract: BAS16X
Text: BAS16X BAS16X 1.20 SOD-523 Swithching Diode 0.80 0.30 FEATURES High-Speed Switching Applications Lead Finish: 100% Matte Sn Tin Qualified Reflow Temperature: 260 ℃ Extremely Small SOD-523 Package 1.60 0.10 0.65 MARKING: A6 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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BAS16X
OD-523
OD-523
100uA
150mA
10mAdc
DIODE A6
BAS16X
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Untitled
Abstract: No abstract text available
Text: VBUS051BD-HD1 Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • • • • 1 2 20856 20855 MARKING example only • XY • • • • 21121 Bar = cathode marking Y = type code (see table below) X = date code
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VBUS051BD-HD1
LLP1006-2L
AEC-Q101
2002/95/EC
2002/96/EC
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Diode Network / ESD Suppressor COMCHIP SMD DIODE SPECIALIST CDA4S14G RoHS Device Voltage: 13 Volts Current: 50 mA Package (SOT-143) Feature Marking “ CDA4 “ This diode network is designed to provide two channels for active termination of highspeed data signals to eliminate signal
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CDA4S14G
OT-143)
MDS0903003A
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BAS116
Abstract: No abstract text available
Text: BAS116 3 Silicon Low Leakage Diode Low-leakage applications Medium speed switching times 2 Single diode 1 1 VPS05161 3 EHA07002 Type BAS116 Marking JVs Pin Configuration 1=A 2 n.c. 3=C Package SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAS116
VPS05161
EHA07002
EHB00054
Aug-20-2001
EHB00055
BAS116
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D793 PESDxS2UQ series Double ESD protection diode Product specification 2003 Dec 15 Philips Semiconductors Product specification Double ESD protection diode PESDxS2UQ series FEATURES MARKING • Uni-directional ESD protection of two lines or
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M3D793
RS232
PESD12VS2UQ
SCA75
R76/01/pp10
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Untitled
Abstract: No abstract text available
Text: SMBD914/MMBD914. Silicon Switching Diode • For high-speed switching applications SMBD914/MMBD914 ! Type SMBD914/MMBD914 Package SOT23 Configuration single Marking s5D Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage
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SMBD914/MMBD914.
SMBD914/MMBD914
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Untitled
Abstract: No abstract text available
Text: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA6N08G RoHS Device Voltage: 13 Volts Current: 50 mA Package (NSOIC-8) Feature Marking “ CDA6 “ This diode network is designed to provide six channels for active termination of high-speed data signals to eliminate signal undershoot and
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CDA6N08G
MDS0903005A
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Untitled
Abstract: No abstract text available
Text: <s SC311 0.5A Outline Drawing FAST RECOVERY DIODE I Marking • Surface mount device • High voltage by mesa design • High reliability I - CATHODE MARKING - SYMBOL • HC 1 14 Applications • High speed switching - MONTH
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OCR Scan
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SC311
PartNoSC311-4
SC311-6
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ja1020
Abstract: No abstract text available
Text: SIEMENS Silicon Crossover Ring Quad Schottky Diode BAT 14-099R • Medium barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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14-099R
Q62702-A0042
OT-143
14-099R
070I2
ja1020
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