2N7002
Abstract: LT3465 LT3465A DIODE schottky 0.2v DN325
Text: advertisement High Efficiency ThinSOT White LED Driver Features Internal Switch and Schottky Diode – Design Note 325 David Kim Introduction The LT 3465 white LED driver is ideal for backlight circuits in small, battery-powered portable devices— such as cellular phones, PDAs and digital cameras. The
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LT3465
LT3465
DN325
100nF
2N7002
2N7002
LT3465A
DIODE schottky 0.2v
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IRFP350
Abstract: diode sv 03 ADE 352 TI414 diode sv 03 56 IRFP250 IRFP251 IRFP252 IRFP253 IRFP351
Text: 7964142 SAMSUNG SEMICONDUCTOR 98D 0 5 2 0 4 INC N-CHANNEL T POWER MOSFETS IRFP350/351/352/353 Tfl Im F % 41 4 E □ 0□ S E □ 4 fi f FEATURES Low Ros<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance
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IRFP350/351/352/353
IRFP250
IRFP251
IRFP252
IRFP253
IRFP350
IRFP351
IRFP353
ds-80
/bs-20
diode sv 03
ADE 352
TI414
diode sv 03 56
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LT1990
Abstract: variable resistor 100k connection Diode LT 351 dn351f Micropower 100A LT6550 LT6650 precision zener diode precision reference zener diode
Text: advertisement Versatile Micropower Voltage Reference Provides Resistor Programmable Output from 0.4V to 18V – Design Note 351 Jon Munson Introduction Voltage reference integrated circuits are widely used to establish accurate and stable voltages in analog circuits.
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LT6650
LT6650
DN351
dn351f
LT1990
variable resistor 100k connection
Diode LT 351
Micropower 100A
LT6550
precision zener diode
precision reference zener diode
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO LTD SSE D T^OTHl ODD117b 351 » S A K J SMA4021 Silicon PNP Epitaxial Planar ¡Maximum Ratings Item Collector-to-B ase Voltage Ta = 25*C Sym bol S t Ä VCBO -6 0 C ollector-to-E m itter Voltage VCEO -6 0 V Em itter-to-B ase Voltage V ebo
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ODD117b
SMA4021
DD01177
STA300
STA400
45max
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ba9u
Abstract: JM34R8
Text: 2 D I7 5 M -1 2 0 7 6 'in — 9 ^ a > 3- - >i : Outline l£f Drawings POWER TRANSISTOR MODULE : Features • • • • 3511(81^4*'' ^' High Arm Short Circuit Capability hFE*x'S '- ' High DC Current Gain 7 U —jfc'f U V W - i =t —K l*JM Including Free Wheeling Diode
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E829S8
I95t/R89)
ba9u
JM34R8
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PP-10G
Abstract: pp10g
Text: ERICSSON ^ February 1999 PBD 3517/1 Stepper Motor Drive Circuit Description PBD 3517/1 is a bipolar, monolithic, integrated circuit, intended to drive a stepper motor in a unipolar, bilevel way. One PBD 3517/1 and a minimum of external com ponents form a complete control
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500mA.
1522-PBD
SE-164
PP-10G
pp10g
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IRF350
Abstract: IRF352 CEG05 F250 IRF251 IRF252 IRF253 IRF351 IRF353 1tm4a
Text: - .7964142 DE 1 7 ^ 4 1 4 2 SAMSUNG SE M IC O N DUCTOR □DDS1S4 0 ~ | ~ - _ IN C 98D :. 05124 N-CHANNEL POWER MOSFETS IRF350/351/352/353 FEATURES • LOW RoS on • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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IRF350/351/352/353
IRF251
IRF252
IRF253
IRF350
IRF351
JRA710I
S-20V
IRF352
CEG05
F250
IRF353
1tm4a
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lt 0210
Abstract: B150 LT3682 DN475
Text: µPower Buck Regulator Safely Rides Through Automotive Load Dumps – Design Note 475 Juan G. Aranda Introduction When a buck regulator is used in applications where output short-circuit and overload conditions occur, the duty cycle required to keep the inductor current under control can
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500ns/DIV
DN475
800kHz
lt 0210
B150
LT3682
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step down transformer 12v
Abstract: 18v step down transformer 12v and 500ma transformer sepic flyback converter 12v to 18v Transformer sepic LT1961 UPS140 5v dc 500ma variable transformer dc dc sepic 5V converter
Text: advertisement Boost Regulator Makes Low Profile SEPIC with Both Step-Up and Step-Down Capability – Design Note 317 Keith Szolusha 3V to 20V Input, 5V Output, 3mm Maximum Height SEPIC Figure 1 shows a 3V to 20V input, 5V output 3mm maximum height SEPIC using the LT 1961, a 1.25MHz,
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25MHz,
410mA
830mA
LT1961
com/go/dnLT1961
dn317f
step down transformer 12v
18v step down transformer
12v and 500ma transformer
sepic
flyback converter 12v to 18v
Transformer sepic
UPS140
5v dc 500ma variable transformer
dc dc sepic 5V converter
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Untitled
Abstract: No abstract text available
Text: • M 3 0 2 5 7 1 D 0 S 3 T 4 a 2 HARRIS 7 f l b ■ H A S IR F350/351/352/353 IRF350R/351R/352R/353R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package TO-2Q4AA • 13A and 15.0A, 350V - 400V • i"DS on) = ° -3 fi and 0 .4 fi
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F350/351/352/353
IRF350R/351R/352R/353R
IRF350,
IRF351,
IRF352,
IRF353
IRF350R,
IRF351R,
IRF352R
IRF353R
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1rf9610
Abstract: IRF9610 IRF9610S ScansUX102 afra marking
Text: PD-9.350F International l»51 Rectifier IRF9610 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements V Ds s = - 2 0 0 V ^DS on = 3 - 0 0 ln = -1.8A Description DATA SHEETS The HEXFET technology is the key to International Rectifier’s advanced line
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IRF9610
-200V
O-220
1RF9610S
1rf9610
IRF9610S
ScansUX102
afra marking
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13N50D
Abstract: 13N5 OC205 e5270 13N50
Text: rZ 7 SCS-THOMSON Ä T# [» [æ a jO îIR M O û S S T H 13N5 0 D N - CHANNEL ENHANCEMENT MODE FREDFET PRELIM INARY DATA TYPE STH 13N 50D . V dss R D S o n Id 500 V 0 .4 5 £2 13 A P O W E R M O S T R A N S IS T O R W ITH F A S T RECOVERY B U LK D IO D E: C O M P L E T E
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O-218
20/zs
STH13N50D
0C19570
13N50D
13N5
OC205
e5270
13N50
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. FRDB-3500P-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 35 AMP FAST RECOVERY BRIDGE RECTIFIERS MECHANICAL SPECIFICATION FEATURES SERIES FDB3500P - FDB3510P PRV Ratings from 50 to 1000 Volts
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FRDB-3500P-1B
FDB3500P
FDB3510P
E141956ounted
300mSec
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FDB3500P
Abstract: Fast Recovery Bridge Rectifiers FDB3510P G17Z Dada sheet
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. FRDB-3500P-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 35 AMP FAST RECOVERY BRIDGE RECTIFIERS MECHANICAL SPECIFICATION FEATURES SERIES FDB3500P - FDB3510P PRV Ratings from 50 to 1000 Volts
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FRDB-3500P-1B
FDB3500P
FDB3510P
E124962
300mSec
Fast Recovery Bridge Rectifiers
FDB3510P
G17Z
Dada sheet
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triac tic 2260
Abstract: NATIONAL LINEAR APLICATION VALVO V42310-Z110 B250C1500 B250C1500 B B80C1000 telequarz B80C800 datasheet LT 735
Text: ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 4.3 User’s Manual 02.95 PEB 2091 V4.3 Revision History: Previous Releases: Page Original Version: 09.94 02.95 Subjects changes since last revision Update including appendix Data Classification
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FDB3500P
Abstract: FDB3510P 3501P
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. FRDB-3500P-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 35 AMP FAST RECOVERY BRIDGE RECTIFIERS MECHANICAL SPECIFICATION FEATURES SERIES FDB3500P - FDB3510P PRV Ratings from 50 to 1000 Volts
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FRDB-3500P-1B
FDB3500P
FDB3510P
E141956
3500P
3501P
3502P
3504P
3506P
3508P
FDB3510P
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WESTINGHOUSE scr
Abstract: WESTINGHOUSE ELECTRIC scr WESTINGHOUSE scr fast WESTINGHOUSE ELECTRIC application data scr westinghouse 12 Westinghouse diode Westinghouse Westinghouse Semiconductor
Text: 420A Avg. 650A RMS Up to 1800 Volts 8 0-10 0 j j s Fast Switching SCR T72H 42 Symbol 0D 0D, 0D2 H <pJ Jt L N Inches Min. 2.250 1.333 2.030 1.020 .135 .075 7.75 .040 Millimeters Min. Max. 57.15 58.17 33.86 34.11 51.56 53.09 25.91 26.92 3.43 3.68 2.29 1.91
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00A//Usec)
00A//Jsec)
WESTINGHOUSE scr
WESTINGHOUSE ELECTRIC scr
WESTINGHOUSE scr fast
WESTINGHOUSE ELECTRIC application data scr
westinghouse 12
Westinghouse diode
Westinghouse
Westinghouse Semiconductor
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rca thyristor manual
Abstract: diode lt 341 1W1000 RG35A "RCA Solid State thyristor
Text: B3612 PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC D ECEM BER 1995 - B 6V IS6 0 SfiPfeM HEFI 1897 Copyright 1997. Power Innovations Limited. UK OVERVOLTAGE PROTECTION FOR ERICSSON COMPONENTS LINE INTERFACE CIRCUITS • PBA 3357/3 DCLIC Overvoltage Protector
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B3612
RLM88
T-001089
R3612
TCM1060
R3612
1W1000
rca thyristor manual
diode lt 341
RG35A
"RCA Solid State thyristor
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Untitled
Abstract: No abstract text available
Text: 4Û55452 QOmabb fl?b • INR International Rectifier IRF9610 bSE J> INTER-NATIONAL RECTIFIER HEXFET Power M O S FE T • • • • • PD-9.350F Dynamic dv/dt Rating P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements V pss ~ "200V R DS on =
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IRF9610
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Coiltronics VP1-0076
Abstract: LTC1871 FZT605 VP1-0076 10bq060 MMSD4148T11 30BQ015 B952AS-1R8N DS104C2 FDC2512
Text: advertisement LTC1871 No RSENSE Controller Is Small and Efficient in Boost, Flyback and SEPIC Applications – Design Note 296 Tick Houk the on-time, thereby providing the control loop with a “lossless” method of measuring the switch current. This technique provides the maximum efficiency possible for
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LTC1871
The10k
DN296
VP1-0076
FDC2512
FZT605
MMBZ5239BLT1
MMSD4148T11
10BQ060
com/go/dnLTC1871
Coiltronics VP1-0076
FZT605
VP1-0076
10bq060
MMSD4148T11
30BQ015
B952AS-1R8N
DS104C2
FDC2512
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. BRDB-3500-1C ADBD-3500-1C 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 35 AMP SILICON BRIDGE RECTIFIERS MECHANICAL SPECIFICATION FEATURES SERIES: DB3500 - DB3510 and ADB3504 - ADB3508
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BRDB-3500-1C
ADBD-3500-1C
DB3500
DB3510
ADB3504
ADB3508
E141956
300mSec
35dbm
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. BRDB-3500-1C ADBD-3500-1C 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 35 AMP SILICON BRIDGE RECTIFIERS MECHANICAL SPECIFICATION FEATURES SERIES: DB3500 - DB3510 and ADB3504 - ADB3508
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BRDB-3500-1C
ADBD-3500-1C
DB3500
DB3510
ADB3504
ADB3508
E141956
300mSec
35dbm
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. BRDB-3500P-1C ADBD-3500P-1C 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 35 AMP SILICON BRIDGE RECTIFIERS MECHANICAL SPECIFICATION FEATURES SERIES: DB3500P - DB3510P and ADB3504P - ADB3508P
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BRDB-3500P-1C
ADBD-3500P-1C
DB3500P
DB3510P
ADB3504P
ADB3508P
300mSec
35dbp
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j329
Abstract: transistor sb 772 TRANSISTOR b 772 p jft 1411 2SJ329 GI 242 F108 diode diode lt 0236 F108 NEC 2415
Text: M 0 S J F ^ f M ^ / \ Or7 - M O S FET M O S Field Effect P ow er Transistor P ^ ^ t ^ l / / \ o7 - M 0 S I 2 S J 3 2 9 Ü P ? + ^ ;U / \ “ 7 - M 0 S F E T Ü F E T T * < X - f 'y ^ > ^ Î $ 1 4 * ^ # n T Î 3 U , ;& Î l 7 7^ 5 l i L X - ^ X -f y ^ i » D C - D C = l > / < - $ IC ftilT '- fo
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