Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE LT 247 Search Results

    DIODE LT 247 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE LT 247 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRG4PSH71KD

    Abstract: GE 84A Diode LT 410 diode lt 247
    Text: PD - 91688 PRELIMINARY IRG4PSH71KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for


    Original     		PDF IRG4PSH71KD O-247 O-264, O-247, IRG4PSH71KD GE 84A Diode LT 410 diode lt 247

    IC 282

    Abstract: INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST IRG4PSC71KD diode lt 247
    Text: PD - 91684 PRELIMINARY IRG4PSC71KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High abort circuit rating IGBTs, optimized for


    Original     		PDF IRG4PSC71KD O-247 O-264, O-247, IC 282 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST IRG4PSC71KD diode lt 247

    IC OZ 9936

    Abstract: 10E-2 38E-2 80CPQ020
    Text: PD-20711 rev. B 11/99 80CPQ020 80 Amp SCHOTTKY RECTIFIER TO-247AC Description/Features This center tap Schottky rectifier has been optimized for ultra low forward voltage drop specifically for 3.3V output power supplies. The proprietary barrier technology allows for reliable


    Original     		PDF PD-20711 80CPQ020 O-247AC IC OZ 9936 10E-2 38E-2 80CPQ020

    10E-2

    Abstract: 38E-2 80CPQ020 BV-24
    Text: PD-20711 rev. B 11/99 80CPQ020 80 Amp SCHOTTKY RECTIFIER TO-247AC Description/Features This center tap Schottky rectifier has been optimized for ultra low forward voltage drop specifically for 3.3V output power supplies. The proprietary barrier technology allows for reliable


    Original     		PDF PD-20711 80CPQ020 O-247AC 10E-2 38E-2 80CPQ020 BV-24

    60KQ30LB

    Abstract: 180I 60KQ20LB 60KQ20LE 60KQ30LE
    Text: SCHOTTKY BARRIER DIODE 60KQ20LE 60KQ30LE 60KQ20LB 60KQ30LB 66A / 2 0 — 3 0 V FEATURES 0 Similar to TO-247AC 10-3P Case ° Extremely Low Forward Voltage Drop ° Low Power Loss, High Efficiency » High Surge Capability ° 10 Volts thru 60 Volts Types Available


    OCR Scan     		PDF 6A/20â 60KQ20LE 60KQ30LE 60KQ20LB 60KQ30LB O-247AC 60KQ20LB 60KQ30LB bbl512B 180I

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE 16KQ50 16KQ60 16KQ50B 16KQ60B 16.6a /50~ 60v FEA T U R ES 15.91626 • 15.&6Ô2) °Similar to TO-247AC TO-3P) Case 3.61.142) r. % 5.7(.224) 5.3(.208) r • Lo w Forward Voltage Drop 1.6(.063) 4X169) 3.7(.145) MAX 0 Lo w Power Loss, High Efficiency


    OCR Scan     		PDF 16KQ50 16KQ60 16KQ50B 16KQ60B O-247AC 4X169) 47C215) 2C559) bbl51E3 16KQ50

    xg-hs

    Abstract: dc dc converter melcher 24 imr 15-12-2 pin out melcher LM 1000 dc dc converter melcher 24 imr 15-12-2 Melcher family lm 3000 melcher am 1000 dc-dc melcher am 3000 converter
    Text: IMR 15-Family DC-DC Converters <40 W Benign Environment 15 W DC-DC Converters IMR 15-Family Input to output electric strength test 500 V DC Single or dual output 5 i \ ^ i 2472 .0" x u 51 2.0" Summary with standard battery voltages. The IMR 15 converters fea­


    OCR Scan     		PDF 15-Family 3/1197/IN xg-hs dc dc converter melcher 24 imr 15-12-2 pin out melcher LM 1000 dc dc converter melcher 24 imr 15-12-2 Melcher family lm 3000 melcher am 1000 dc-dc melcher am 3000 converter

    melcher dc imr

    Abstract: BW 6122
    Text: Benign Environment DC-DC Converters <40 W IMR 6-Fomily 6 W DC-DC Converters IMR 6-Family Input to output electric strength test 500 V DC Single or dual output r - '- 'x 5i \ n- ^ J 2 .0 " x|— 51 2 .0 " 247- Summary The IMR 6 fam ily of DC-DC converters have been devel­


    OCR Scan     		PDF 3/1197/IN melcher dc imr BW 6122

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW8N60E TMOS E-FET Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole M otorola Preferred Device TMOS POWER FET 8.0 AMPERES 600 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF MTW8N60E

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE KCQ20A04 22A/40v FEATURES O Similar to TO-247AC TO-3P Case o Dual Diodes - Cathode Common o Low Forward Voltage Drop o Low Power Loss, High Efficiency o High Surge Capability o 40 Volts through 100 Volts Types Available Dimensions in nun (Inches)


    OCR Scan     		PDF KCQ20A04 2A/40v O-247AC

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE 30KQ30 30KQ40 30KQ30B 30KQ40B 33A/30~ 40V FEATURES •Similar to TO-247AC TO-3P Case • Low Forward Voltage Drop “ Low Power Loss, High Efficiency • High Surge Current Capability ° 30 Volts through 60 Volts Types Available 30KQ* *B


    OCR Scan     		PDF 30KQ30 30KQ40 30KQ30B 30KQ40B 3A/30~ O-247AC 30KQ30 30KQ30B

    IC 74LS247

    Abstract: J15S BCD to 7 segment decoder with tails 74LS247 diode lt 247 74ls247 pin configuration 5T74
    Text: S G S-THOHSON D7E D | 713TE37 ÜGlbaib 0 | LOW POWER SCHOTTKY INTEGRATED CIRCUITS f : ; ! 5T74LS247/248 î 67C 16345 T - 'S l- r f D PRELIMINARY DATA BCD-TO-SEVEN-SEGMENT DECODER/DRIVES DESC RIPTIO N T he T54LS/T74LS 247/248 are BCD-to-seven seg­ m ent Decoder/Drivers. They com pose the and with


    OCR Scan     		PDF 713TE37 5T74LS247/248 T54LS/T74LS LS247 LS248 IC 74LS247 J15S BCD to 7 segment decoder with tails 74LS247 diode lt 247 74ls247 pin configuration 5T74

    tc951

    Abstract: KCF16A50 DIODE MNN 55nsec
    Text: 17.7A /500V /trr:55nsec FAST RECOVERY DIODE KCF16A50 FEATURES 5.31209 4.71.185) M o Similar to TO - 247AC Case 5.71224) 5.3 .2ÛS) ° Dual Diodes- Cathode Common h h ° Ultra-Fast Recovery I 4.3(.169) I 3.7Î.ÏÏ5) o Low Forward Voltage Drop O ff 2.2C087)


    OCR Scan     		PDF A/500V/trr 55nsec KCF16A50 247AC 8C031) tc951 KCF16A50 DIODE MNN 55nsec

    LT 0216 diode

    Abstract: No abstract text available
    Text: IXYS Fast Recovery Epitaxial Diode FRED DSEl 30 lFAVM = 26 A VRRM = 1200 V trr = 40 ns TO-247 A = Anode, C = Cathode Maximum Ratings Symbol Test Conditions Urhs W » TVj = T"vjM Tc = 85°C; rectangular, d = 0.5 t, < 10 us; rep. rating, pulse width limited by TVJM


    OCR Scan     		PDF O-247 O-247 LT 0216 diode

    URG7

    Abstract: 1200V Ultrafast Power Rectifier Ultrafast recovery 1200 V
    Text: RURG75120 fR HARRIS S E M I C O N D U C T O R 75A, 1200V Ultrafast Diode D e c e m b e r 1993 Package Features • Ultrafast with Soft Recovery. <125ns JEDEC STYLE 2 LEAD TO-247 TOP VIEW • Operating


    OCR Scan     		PDF RURG75120 O-247 125ns TA49032) 125ns) RURG75120 URG7 1200V Ultrafast Power Rectifier Ultrafast recovery 1200 V

    Untitled

    Abstract: No abstract text available
    Text: SLOTTED OPTICAL SWITCH lU I E im iillC i H21B1/2/3 SYMBOL A ' t @ 6, =4 SECTION X - X~T~ LEAD PROFILE 8T133»-0t A, A; b. P 0, 0; Si £ L MILLIMETERS MIN. MAX. 10.7 1V0 3.0 3Z 30 3.2 600 .750 .50 MOM, 247 24.3 11.8 3.0 6.9 2,3 6.15 12.0 INCHES MIN MAX .422


    OCR Scan     		PDF H21B1/2/3 8T133 ST1148 ST11S2

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE 16KQ30 16KQ40 16KQ30B 16KQ40B 16.6A/30— 40V FEATURES °Similar to TO-247AC TO-3P Case ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Current Capability ° 30 Volts and 100 Volts Types Available MAXIMUM R A T IN G S


    OCR Scan     		PDF A/30-- 16KQ30 16KQ40 16KQ30B 16KQ40B O-247AC 16KQ30 16KQ40B

    60KQ40E

    Abstract: 60KQ40B
    Text: SCHOTTKY BARRIER DIODE 60KQ30E 60KQ40E 60KQ30B 60KQ40B 66A/30— 40V FEATURES oSimilar to TO-247AC TO-3P Case » Low Forward Voltage Drop " Low Power Loss, High Efficiency ° High Surge Current Capability ° 10 Volts thru 60 Volts Types Available 1. ^ 1.049)


    OCR Scan     		PDF O-247AC 6A/30-- 60KQ30E 60KQ40E 60KQ30B 60KQ40B 60KQ30B 0KQ40B 60KQ40B

    60KQ40E

    Abstract: 60KQ30E 60KQ40B 60KQ30B diode 66a 60A KIN
    Text: SCHOTTKY BARRIER DIODE 60KQ30E 60KQ40E 60KQ30B 60KQ40B 66A/30— 40V FEATU RES 3.6U42 -j5A<02>^|/3.4»Ì4Ì » Similar to TO-247AC TO-3P) Case • Low Forward Voltage Drop ° Low Power Loss, High Efficiency • High Surge Current Capability • 10 Volts thru 60 Volts Types


    OCR Scan     		PDF 6A/30â 60KQ30E 60KQ40E 60KQ30B 60KQ40B O-247AC 60KQ--B 60KQ30B 60KQ40B diode 66a 60A KIN

    Untitled

    Abstract: No abstract text available
    Text: International IG R Rectifier PD - 9.1343A IRFP140N PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = "100 V RüS on = 0.052Î2 lD = 33A


    OCR Scan     		PDF IRFP140N O-247

    diode duj

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE 30KQ50 30KQ60 30KQ50B 30KQ60B 33A/50— 60V FEATU R ES oSimilar to TO-247AC TO-3P Case ° Low Forward Voltage Drop ' Low Power Loss, High Efficiency ° High Surge Current Capability 30 Volts through 60 Volts Types Available Dimensions in mm (Inches)


    OCR Scan     		PDF O-247AC 3A/50-- 30KQ50 30KQ60 30KQ50B 30KQ60B 30KQ50 30KQ60B diode duj

    1XFH12n100

    Abstract: transistor 13n80
    Text: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure


    OCR Scan     		PDF 4bflb22b 1532A 200ns) IXFH12N100 IXFH10N100 IXFM12N100 IXFM10N100 1XFH12n100 transistor 13n80

    TA9881

    Abstract: z738 B 1403 N circuit Diagram RFV10N50BE
    Text: m HARRIS S E M I C O N D U C T O R RFV10N50BE 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power M O SFETs December 1992 Package Features 5 LEAD TO-247 STYLE • 10A . 500V T OP VIEW • rDS on = 0.48Q • Very Fast Turn-Off Characteristics • Nanosecond Switching Speeds


    OCR Scan     		PDF RFV10N50BE O-247 RFV10N50BE AN7254 AN7260 TA9881 z738 B 1403 N circuit Diagram

    Untitled

    Abstract: No abstract text available
    Text: H E 0 I MÖSS4SE INTERNATIONAL ÜGDÖ74S 3 | Data Sheet No. PD-9.588A T-39-13 RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFP244 IRFP245 N-CHANNEL Product Summary 250 Volt, 0.28 Ohm HEXFET TO-247AC TO-3P Plastic Package


    OCR Scan     		PDF T-39-13 IRFP244 IRFP245 O-247AC C-497 IRFP244, IRFP245 C-498