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    DIODE LT 205 Search Results

    DIODE LT 205 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE LT 205 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    diode lt 205

    Abstract: CMLM0205 CMLM0705 CMLM2205 diode marking 53
    Text: Central CMLM2205 M U LT I D I S C R E T E M O D U L E SURFACE MOUNT SILICON SWITCHING NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE TM SOT-563 CASE TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMLM0205 is a Multi Discrete Module ™ consisting of a single NPN


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    CMLM2205 OT-563 CMLM0205 CMLM0705 150mA, diode lt 205 CMLM0705 CMLM2205 diode marking 53 PDF

    113 marking code PNP transistor

    Abstract: MARKING C75 CMLM2205 CMLM0705
    Text: Central CMLM0705 M U LT I D I S C R E T E M O D U L E SURFACE MOUNT SILICON SWITCHING PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE TM SOT-563 CASE TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMLM0705 is a Multi Discrete Module ™ consisting of a single PNP


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    CMLM0705 OT-563 CMLM0705 CMLM2205 150mA, 113 marking code PNP transistor MARKING C75 CMLM2205 PDF

    hd74HC4511P

    Abstract: HD74HC4511 BCD-to-Seven-Segment HD74HC4511FPEL HD74HC4511RPEL PRDP0016AE-B PRSP0016DH-B
    Text: HD74HC4511 BCD-to-Seven Segment Latch/Decoder/Driver REJ03D0652-0200 Previous ADE-205-539 Rev.2.00 Mar 30, 2006 Description The HD74HC4511 provides the functions of a 4-bit storage latch, a BCD-to-seven-segment decoder, and an output driver. Lamp test (LT), blanking (BI), and latch enable (LE) inputs are used to test the display, to turn off or pulsemodulate the brightness of the display, and to store a BCD code, respectively.


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    HD74HC4511 REJ03D0652-0200 ADE-205-539) HD74HC4511 hd74HC4511P BCD-to-Seven-Segment HD74HC4511FPEL HD74HC4511RPEL PRDP0016AE-B PRSP0016DH-B PDF

    DD100HB160

    Abstract: 1S43 DF30CA DF60A df30aa
    Text: S A NS HA ELECTRIC MF 6 CO T> 37E 7 cm S 4 3 ÖOOOOOb 1 E lT s E M J DIODE . T'Z3-0? ISOLATED TYPE 3 PHASE DIODE MODULE TYPE DF20AA DF20BA DF20CA DF20DB DF30AA DF30BA DF30CA DF30DB DF40AA V A *C 1200-1600 400— 800 800— 1600 400—800 1200-1600 400—800


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    DF20AA DF20BA DF20CA DF20DB DF30AA DF30BA DF30CA DF30DB DG20AA SDF2000B DD100HB160 1S43 DF60A PDF

    Untitled

    Abstract: No abstract text available
    Text: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS


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    00Q01t 9305-F-078 DO-35 DO-41 DO-15 DO-201AD PDF

    BZY95C12

    Abstract: in152 BZY95-C12 BZY95-C51 BZY95C22 BZY96C5V1 BZY96C6V2 BZY96-C6V8 BZY95-C24 BZY95C24
    Text: SEMITRON INDUSTRIES LT» 43E D • &137 &&^ OOOOISI O B S L C B BZY9S/BZY96/Z2 SERIES Hermetically Sealed Metal Package ■Voltage Regulator Diode Released to BS/CECC 9305-F082 ■Voltage Range 3.0 to 400 Volts 1.5 Watt Steady State ■400 Watt Peak Power


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    BZY9S/BZY96/Z2 9305-F082 9305-F-082 DO-35 DO-35 DO-41 DO-15 DO-201AD BZY95C12 in152 BZY95-C12 BZY95-C51 BZY95C22 BZY96C5V1 BZY96C6V2 BZY96-C6V8 BZY95-C24 BZY95C24 PDF

    ITB68

    Abstract: No abstract text available
    Text: S E M IT R O N I N D U S T R I E S LT D 4 3E J> m B 137&&1 O O O O lb ? 4 E3 SLCB L7SERIES Hermetically Sealed Metal Packaged •Surge Suppressor Diode Voltage Range 5VI to 200 Volts 25 Watt Steady State ■1500 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS


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    9305-F-080 DO-35 DO-41 DO-15 DO-201AD ITB68 PDF

    diode lt 205

    Abstract: thyristor 12V 1A
    Text: /S T SCS-THOMSON ö^O !MSi(gir^(QM(g§ MDS35 DIODE / THYRISTOR MODULE PRELIMINARY DATASHEET FEATURES • V d r m = V r r m UP TO 1200 V ■ lT(AV = 25 A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE : INSULATING VOLTAGE 2500 V{RMS) DESCRIPTIO N The MDS35 family are consist of one rectifier


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    MDS35 MDS35 380ns diode lt 205 thyristor 12V 1A PDF

    IN4745

    Abstract: in4749 in4728
    Text: 7" - / / - / 3 LI TE-ON INC CHE D | S 5 3 b 3 b 7 0 0 0 1 4 7 3 3 | IN4728 THRU IN 4764 1 WATT PLASTIC ZENER DIODE V O LT A G E RANGE 3.3 to 100 Volts POWER RATING 1.0 Watts =m = FEA TU RES: DO-41 • • • • Low cost Low zener impedance Excellent clamping


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    IN4728 DO-41 DO-41, IL-STD-202 IN4764 IN4745 in4749 PDF

    in4742a

    Abstract: IN4728A IN4759A 1N4134A 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A
    Text: 1N4728A thru 1N 4764A DO-41 G LASS Micro/semi Corp. ' The diode expens SCOTTSDALE, AZ F o r m o re in fo rm a tio n call: 602 941-6300 SILICO N 1 WATT ZEN ER D IO D E S FEATURES • 3.3 TH R U 100 V OLTS • H ER M ETIC G LA S S PAC KAGE • C O N S U LT FA C TO R Y FOR V O LTA G ES O VER 100 V


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    PDF

    mosfet 4456

    Abstract: 1RFF312R 4456 mosfet LT 312r 1RFF312
    Text: 3 ] H A R R I S IRFF3 1 0 /3 1 1 /3 1 2 / 3 1 3 IRFF3 1 OR/3 1 1 R/3 1 2 R/3 1 3 R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package TQ-205AF • 1.35A and 1.15A, 350V - 400V • rDS on = 3-Bfl and 5 .0 fl • Single Pulse Avalanche Energy Rated*


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    TQ-205AF IRFF310, IRFF311, IRFF312, IRFF313 IRFF310R, IRFF311R, IRFF312R, IRFF313R 1RFF312R, mosfet 4456 1RFF312R 4456 mosfet LT 312r 1RFF312 PDF

    ff-310

    Abstract: No abstract text available
    Text: • 4 3 0 2 5 7 1 2 3 H A o o s m y o R R 1 1 3 ■ HAS I S I R F F 3 1 0 / 3 1 1 / 3 1 2 / 3 1 3 I R F F 3 1 O R / 3 1 1 R / 3 1 2 R / 3 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TQ-205AF • 1.35A and 1.15A, 350V - 400V


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    TQ-205AF IRFF310, IRFF311, IRFF312, IRFF313 IRFF310R, IRFF311R, IRFF312R, IRFF313R 75BVdss ff-310 PDF

    2SK408

    Abstract: POWER MOS FET 2sk408 2SK409 VM-50V D15mm
    Text: blE » • 4^1=205 0013055 033 ■ HITM 2SK408,2SK409 HI T ACH I/{OPTOELECTRONIC S IL IC O N N -C H A N N EL M O S F ET 2SK408 HF/VHF POWER AMPLIFIER 2SK409 IE ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Included Gate Protection Diode.


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    2SK408 2SK409 2SK409 O-220AB) 28MHz --50pF ID-12mm. 2SK408 POWER MOS FET 2sk408 VM-50V D15mm PDF

    423R

    Abstract: f423 IR 423
    Text: 33 HARRIS IR F F420/421/422/423 IR FF420R/421 R /422R /423R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO-205AF • 1.4A and 1.6A, 450V - 500V • rDS on = 3.0(1 and 4.0fi • Singla Pulsa Avalancha Energy Rated* GATE SOURCE


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    F420/421/422/423 FF420R/421 /422R /423R O-205AF IRFF420, IRFF421, IRFF422, IRFF423 IRFF420R, 423R f423 IR 423 PDF

    Untitled

    Abstract: No abstract text available
    Text: • 430E571 00S3?Sti TTO ■ HAS Q0 H A R R IS 2 N 6 7 8 6 N-Channel Enhancem ent-Mode Power MOS Field-Effect Transistor A u g u s t 19 9 1 P a ck a g e F ea tu res » O C A 4UUV Af\n\f 9 1I .Z3A, TQ-205AF BOTTOM VIEW * r D S on = 3 G n • S O A is P o w e r-D is s ip a tio n L im ite d


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    430E571 TQ-205AF LH0063 S-44136 PDF

    1N4151 equivalent

    Abstract: Diode Equivalent 1n4151 1N4532 1N4152 1N4151 1N4153 1N4154 1N4454 MHD618 in4454
    Text: 1N4154 S E E PAG E 205 Silicon r -— i Diodes 1N4151.2.3 1N4454 1N4532,3,4 This fam ily of General Electric silicon signal diodes are very high speed sw itching diodes for computer circuits and general purpose applications. These diodes incorporate an oxide passivated planar struc­


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    1N4154 1N4151 1N4454 1N4532 JS-2-65-11 1N4151, 1N4532, 1N4151 equivalent Diode Equivalent 1n4151 1N4152 1N4153 1N4454 MHD618 in4454 PDF

    6sf7

    Abstract: 6b8g RADIOTRON rca company
    Text: 6SF7 DIODE-SUPER-CONTROL AMPLIFIER PENTODE St N G L E -E N D E D M ETAL T Y PE H e a t e r* Coated Uni po te n tia l Cathode a-c o r d-c vol ts V o ltage 6.3 amp. Current 0.3 D ire c t In te re le ctro de C apacitances:0 Pentode Uni t G rid to PI ate 1nput


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    RADI0T80N 92C-6254 6sf7 6b8g RADIOTRON rca company PDF

    Untitled

    Abstract: No abstract text available
    Text: • 430ZZ71 0053731, ?2fl ■ HAS 2N6798 ££j HARRIS N-Channel Enhancement-Mode Power M O S Field-Effect Transistor A ugust 1991 Features Package T0-205AF • 5.5A, 200V B O T T O M V IEW • rDS{on = °-4 n • S O A is Power-Dissipation Limited GATE SO U RCE


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    430ZZ71 2N6798 T0-205AF LH0063 PDF

    Diode LT 350

    Abstract: No abstract text available
    Text: OM9019SS OM9021SS OM9020SS FULL WAVE, SINGLE PHASE RECTIFIER BRIDGE IN ISOLATED SIP PACKAGE 15 Amp, 200 To 600 Volts, 35 To 50 ns trr FEATURES Very Low Forward Voltage Very Fast Switching Time Hermetic Metal Package, 6-Pin SIP Low Thermal Resistance Isolated Package


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    OM9019SS OM9021SS OM9020SS MIL-S-19500, flclD73 1508C QM9019SS QM9021SS Diode LT 350 PDF

    KA2 DIODE

    Abstract: DT 7130 IC rc 3150 IRKT 180
    Text: International S Rectifier s e r ie s ir k .fis o FAST SCR I DIODE and SCR / SCR MAGN-A-pak Power Modules Features • ■ ■ I ■ F a st tu rn -o ff th yristo r F a st re c o v e ry d io d e H igh s u rg e c a p a b ility E le c tric a lly is o la te d b a s e p la te


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    Tj-125 -25A/MS -350A Tj-125-C KA2 DIODE DT 7130 IC rc 3150 IRKT 180 PDF

    SKE400CA

    Abstract: diode 1N 6267 1N SERIES DIODE diode 1.5ke 47A 15KE diode SKE68 SKE400 SKE400C TRANSZORB diode transzorb i-v curve
    Text: 1.5KE6.8 THRU 1.5KE400CA GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 to 440 Volts 1500 Watt Peak Pulse Power FEATURES 1.5KE .205 5.207V .190 (4.826 DIA. .375 (9.527) .360 (9.146) 1.00 (25.4) *.042(1.07) MIN. ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0


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    5KE400CA 12-BREAKDOW SKE400CA diode 1N 6267 1N SERIES DIODE diode 1.5ke 47A 15KE diode SKE68 SKE400 SKE400C TRANSZORB diode transzorb i-v curve PDF

    Cesiwid

    Abstract: 1,0F 5,5v MAXCAP LT055474A LP055104A 5.5v 0.047f lc055104 LP055105A LC055225A LF055104A
    Text: CESIWID Maxcap Double layer Capacitors Maxcap Double Layer Capacitors T a b le o f C o n t e n t s ^ P r o d u c t In fo r m a tio n a n d 1 Product O v e rv ie w . 3


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    PDF

    Photoresistor

    Abstract: LT205513 Photoresistor diode optocoupler Photoresistor LT30 LT9914 LT99 diode lt 54 LT2001 LT-99
    Text: LT 99. LT 3011 LT 20. LT 10. LT 10. LT 2 0 . LT 3 0. LT 9 9 . R1 m A Output Resistance at If = 1mA R 2 0 m A Output Resistance at If = 20mA R oi Dark Resistance after 1 sec If = 0 Ros Dark Resistance after 5 sec (If = 0) Top Operating Temperature Range


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    R20mA Photoresistor LT205513 Photoresistor diode optocoupler Photoresistor LT30 LT9914 LT99 diode lt 54 LT2001 LT-99 PDF

    in4606

    Abstract: IN4150 1N4606 1N4150 1N4450 1N4607 1N460B D035 DT230C DT230H
    Text: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES @ Part Number Ir BV 1OOü A Min. V 1N4451 40 1N4607 85 Vf @ 25°C Max. <nA) 1 Max. @ V r (V) (V) @ Ir(mA) Co @ OV (pf) trr Package T»pe (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.


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    100/iA 1N4150* 1N4450 1N4606 100/tA 1N445I 1N4607 1N460B DT230C DT230H in4606 IN4150 1N4150 D035 PDF